• 대한전기학회:학술대회논문집
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• 대한전기학회 2004년도 추계학술대회 논문집 전기물성,응용부문
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• pp.153-156
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• 2004

An electric power efficiency of electrodeless fluorescent lamp has big relative property of gas in lamp, gas pressure, lamp formation, ingredients of magnetic substance and shape and action frequency etc. We used magnetic substance that open self examination material of electrodeless fluorescent lamp antenna. Ferrite that is used in this experiment was Mn-Zn type. We have examined resistance kind, impedance, Q-factor's frequency characteristic by ferrite. Impedance, resistance and capacitance did not show difference in start frequency 2.65 [MHz] but there was difference quantity. We could know Q-factor's difference according to material, and Q-factor's is important part of antenna design.

• 전기학회논문지P
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• 제59권4호
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• pp.372-376
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• 2010

Electrolytic capacitors have been widely used in power electronics system because of the features of large capacitance, small size, high-voltage, and low-cost. Electrolytic capacitors, which is most of the time affected by aging effect, plays a very important role for the power electronics system quality and reliability. Therefore it is important to estimate the parameter of an electrolytic capacitor to predict the failure. The estimation of the equivalent series resistance(ESR) is important parameter in life condition monitoring of electrolytic capacitor. This paper proposes a simple technique to measure the ESR of an electrolytic capacitor. This method uses a switching DC/DC boost converter to measure the DC Bus capacitor ESR of power converter. Main advantage of the proposed method is very simple in technique, consumes very little time and requires only simple instruments. Simulation results are shown to verify the performance of the proposed method.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2003년도 추계학술대회 논문집 Vol.16
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• pp.464-468
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• 2003

Complex impedances with frequency and voltage variation were analyzed in $ITO/Alq_3(60nm)/Al$ device structure. At low frequency, complex impedance is mostly expressed by resistive component, and at the high frequency by resistance and capacitive component. We have also evaluated resistance, capacitance and permittivity.

• 반도체디스플레이기술학회지
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• 제18권4호
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• pp.120-123
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• 2019

The effect of surface plasmon on ZTO thin films was investigated. The phenomenon of depletion occurring in the interface of the ZTO thin film created a potential barrier and the dielectric layer of the depletion formed a non-mass particle called plasmon. ZTO thin film represents n-type semiconductor features, and surface current by plasma has been able to obtain the effect of improving electrical efficiency as a result of high current at positive voltage and low current at negative voltage. It can be seen that the reduction of electric charge due to recombination of electronic hole pairs by heat treatment of compound semiconductors induces higher surface current in semiconductor devices.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2009년도 하계학술대회 논문집
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• pp.131-131
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• 2009

Silicon Carbide (SiC) is a material with a wide bandgap (3.26eV), a high critical electric field (~2.3MV/cm), a and a high bulk electron mobility ($\sim900cm^2/Vs$). These electronic properties allow high breakdown voltage, high-speed switching capability, and high temperature operation compared to Si devices. Although various SiC DMOSFET structures have been reported so far for optimizing performances, the effect of channel dimension on the switching performance of SiC DMOSFETs has not been extensively examined. This paper studies different channel dimensons ($L_{CH}$ : $0.5{\mu}m$, $1\;{\mu}m$, $1.5\;{\mu}m$) and their effect on the the device transient characteristics. The key design parameters for SiC DMOSFETs have been optimized and a physics-based two-dimensional (2-D) mixed device and circuit simulator by Silvaco Inc. has been used to understand the relationship. with the switching characteristics. To investigate transient characteristic of the device, mixed-mode simulation has been performed, where the solution of the basic transport equations for the 2-D device structures is directly embedded into the solution procedure for the circuit equations. We observe an increase in the turn-on and turn-off time with increasing the channel length. The switching time in 4H-SiC DMOSFETs have been found to be seriously affected by the various intrinsic parasitic components, such as gate-source capacitance and channel resistance. The intrinsic parasitic components relate to the delay time required for the carrier transit from source to drain. Therefore, improvement of switching speed in 4H-SiC DMOSFETs is essential to reduce the gate-source capacitance and channel resistance.

• 한국재료학회지
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• 제24권6호
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• pp.285-292
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• 2014

Commercial activated-carbon used as the electrode material of an electric double-layer capacitor (EDLC) was posttreated with various acids and alkalis to increase its capacitance. The carbon samples prepared were then heat-treated in order to control the amount of acidic functional groups formed by the acid treatments. Coin-type EDLC cells with two symmetric carbon electrodes were assembled using the prepared carbon materials and an organic electrolyte. The electrochemical performance of the EDLC was measured by galvanostatic charge-discharge, cyclic voltammetry, and electrochemical impedance spectroscopy. Among the various activated carbons, the carbon electrodes (CSsb800) prepared by the treatments of coconutshell-based carbon activated with NaOH and $H_3BO_5$, and then heat treated at $800^{\circ}C$ under a flow of nitrogen gas, showed relatively good electrochemical performance. Although the specific-surface-area of the carbon-electrode material ($1,096m^2/g$) was less than that of pristine activated-carbon ($1,122m^2/g$), the meso-pore volume increased after the combined chemical and heat treatments. The specific capacitance of the EDLC increased from 59.6 to 74.8 F/g (26%) after those post treatments. The equivalent series resistance of EDLC using CSsb800 as electrode was much lower than that of EDLC using pristine activated carbon. Therefore, CSsb800 exhibited superior electrochemical performance at high scan rates due to its low internal resistance.

• 한국전자파학회논문지
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• 제14권7호
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• pp.705-711
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• 2003

본 연구에서는 고출력 소자로서 각광받고 있는 AlGaN/GaN HEMT 2$\times$100 $\mu\textrm{m}$ 소자(사파이어 기판)에 대해 열 효과가 포함된 대신호 모델링을 수행하였다. 완성된 대신호 모델을 이용하여 9 mm, 15 mm 사이즈 소자로의 스케일링을 통해 전력증폭기를 설계하였으며 제작된 결과와 비교, 해석하였다. 대신호 모델링은 수렴성과 해석 속도면에서 탁월한 장점을 갖는 수식 기반의 경험적 방법을 사용하였다. Pulsed I-V 측정을 통하여 열모델의 가장 중요한 파라미터인 열 시상수 및 열 저항을 추출하였으며 이를 통하여 완벽한 열 모델 제작이 가능하였다. 제작된 전력증폭기 모듈의 측정결과와 비교를 통하여 본 연구에서 제안된 열 모델이 매우 정확함을 확인할 수 있으며 전력증폭기와 같이 큰 사이즈의 소자를 사용해야 하는 회로의 경우에는 열 효과가 포함된 모델을 사용하여 더욱 정확한 모델링 결과를 얻을 수 있음을 확인할 수 있다.

• JSTS:Journal of Semiconductor Technology and Science
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• 제14권1호
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• pp.1-7
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• 2014

A bidirectional transient voltage suppression (TVS) diode consisting of specially designed $p^--n^{{+}+}-p^-$ multi-junctions was developed using low temperature (LT) epitaxy and fabrication processes. Its electrostatic discharge (ESD) performance was investigated using I-V, C-V, and various ESD tests including the human body model (HBM), machine model (MM) and IEC 61000-4-2 (IEC) analysis. The symmetrical structure with very sharp and uniform bidirectional multi-junctions yields good symmetrical I-V behavior over a wide range of operating temperature of 300 K-450 K and low capacitance as 6.9 pF at 1 MHz. In addition, a very thin and heavily doped $n^{{+}+}$ layer enabled I-V curves steep rise after breakdown without snapback phenomenon, then resulted in small dynamic resistance as $0.2{\Omega}$, and leakage current completely suppressed down to pA. Manufactured bidirectional TVS diodes were capable of withstanding ${\pm}4.0$ kV of MM and ${\pm}14$ kV of IEC, and exceeding ${\pm}8$ kV of HBM, while maintaining reliable I-V characteristics. Such an excellent ESD performance of low capacitance and dynamic resistance is attributed to the abruptness and very unique profiles designed very precisely in $p^--n^{{+}+}-p^-$ multi-junctions.

• 한국전기전자재료학회논문지
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• 제21권5호
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• pp.440-446
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• 2008

To manufacture the MLCC with X7R for high voltage stability, $BaTiO_3-MgO-MnO_2-Y_2O_3$ with $(Ba_{0.4}Ca_{0.6})SiO_3$ glass frit was formulated. Based on this composition, the addition of $Er_2O_3$ showed that TCC(Temperature Coefficient Capacitance) at $85^{\circ}C$ was improved from 5 % to ${\sim}0\;%$, but the dielectric constant and IR (Insulation Resistance) were decreased. The glass frit improved the dielectric constant and IR, so the appropriate contents of $Er_2O_3$ and glass frit were 0.6 mol% and 1 wt%, respectively. It showed that the dielectric constant and RC constant were 2,550 and 2,000 (${\Omega}F$), respectively in the sintering condition at $1250^{\circ}C$ in PO2 $10^{-7}$ Mpa. The MLCC with $3.2{\times}1.6$ (mm) size and $1\;{\mu}F$ was also suited for X7R with the above composition.

• 한국안전학회지
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• 제26권3호
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• pp.15-22
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• 2011

Explosion and fire cause about 30 reported industrial major accidents a year by ignition source which discharge of electrostatic generated to flammable gas, vapor, dust and mixtures. It brings economically and humanly very large loss that accident was caused by fire and explosion from electrostatic discharge. Thus, it is very important that electrostatic discharge energy is to be control below not to be igniting flammable mixtures. There are two kinds of analysis model for electrostatic discharge, human body model and machine model. Human body model is available the parameter of human's electrical equivalent that capacitance is 100 pF, resistance is $1.5k{\Omega}$. To simulate and visualize the electrostatic discharge from human body need a very expensive and high voltage simulator. In this paper, we measured the value of capacitance and resistance concerned with test materials and sizing of specimen and the value of charged voltage concerned with test specimen and distance to develop an electrostatic charge/discharge simulating tool for teaching with which concerned industrial employee and students. The result of experiments, we conformed that the minimum ignition energy of methane-oxygen mixtures meets well the equation $W=1/2CV^2$, and found out that the insulating material and sizing of equivalent value having human body mode are the poly ethylene of 200 mm and 300 mm of diameter. Developed electrostatic charge/discharge simulating tool has many merits; simple mechanism, low cost, no need of electric power and so on.