• Fashion & Textile Research Journal
• /
• v.21 no.6
• /
• pp.697-707
• /
• 2019

This review paper deals with materials, classification, and a current article investigation on smart textile sensors for wearable vital signs monitoring (WVSM). Smart textile sensors can lose electrical conductivity during vital signs monitoring when applying them to clothing. Because they should have to endure severe conditions (bending, folding, and distortion) when wearing. Imparting electrical conductivity for application is a critical consideration when manufacturing smart textile sensors. Smart textile sensors fabricate by utilizing electro-conductive materials such as metals, allotrope of carbon, and intrinsically conductive polymers (ICPs). It classifies as performance level, fabric structure, intrinsic/extrinsic modification, and sensing mechanism. The classification of smart textile sensors by sensing mechanism includes pressure/force sensors, strain sensors, electrodes, optical sensors, biosensors, and temperature/humidity sensors. In the previous study, pressure/force sensors perform well despite the small capacitance changes of 1-2 pF. Strain sensors work reliably at 1 ㏀/cm or lower. Electrodes require an electrical resistance of less than 10 Ω/cm. Optical sensors using plastic optical fibers (POF) coupled with light sources need light in-coupling efficiency values that are over 40%. Biosensors can quantify by wicking rate and/or colorimetry as the reactivity between the bioreceptor and transducer. Temperature/humidity sensors require actuating triggers that show the flap opening of shape memory polymer or with a color-changing time of thermochromic pigment lower than 17 seconds.

• Journal of the Korean Ceramic Society
• /
• v.48 no.4
• /
• pp.323-327
• /
• 2011

The effects of $Dy_2O_3$ and $Er_2O_3$ co-doping on electrical properties and temperature stability of barium titanate ($BaTiO_3$) ceramics were investigated in terms of microstructure and structural analysis. The dielectric constant and the insulation resistance (IR) of 0.7 mol% $Dy_2O_3$ and 0.3 mol% $Er_2O_3$ co-doped dielectrics had about 60% and 20% higher than the values of undoped one, respectively, and the temperature coefficient of capacitance (TCC) met the X7R specification. The addition of $Dy_2O_3$ contributed to electrical properties caused by increase of tetragonality; however, preferential diffusion of $Dy^{3+}$ ions toward A site in $BaTiO_3$ grain exhibited an adverse effect on temperature stability by grain growth. On the other hand, The $Er_2O_3$ addition in $BaTiO_3$ could affect the TCC behavior and the IR with suppression of grain growth caused by reinforcement of grain boundary and electrical compensation. Therefore, the enhanced electrical properties and temperature stability through the co-doping could be deduced from the increase of tetragonality and the suppression of grain growth.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
• /
• v.22 no.11
• /
• pp.949-955
• /
• 2009

In this study, we investigated the effects of Cr dopant (1.0 at% $Cr_2O_3$ sintered at $1000^{\circ}C$ for 1 h in air) on the bulk trap (i.e. defect) and interface state levels of ZnO using dielectric functions ($Z^*$, $M^*$, $Y^*$, $\varepsilon^*$, and $tan{\delta}$), admittance spectroscopy (AS), and impedance-modulus spectroscopy (IS & MS). For the identification of the bulk trap levels, we examine the zero-biased admittance spectroscopy and dielectric functions as a function of frequency and temperature. Impedance and electric modulus spectroscopy is a powerful technique to characterize grain boundaries of electronic ceramic materials as well. As a result, three kinds of bulk defect trap levels were found below the conduction band edge of ZnO in 1.0 at% Cr-doped ZnO (Cr-ZnO) as 0.11 eV, 0.21 eV, and 0.31 eV. The overlapped defect levels ($Zn^{..}_i$ and $V^{\cdot}_0$) in admittance spectra were successfully separated by the combination of dielectric function such as $M^*$, $\varepsilon^*$, and $tan{\delta}$. In Cr-ZnO, the interfacial state level was about 1.17 eV by IS and MS. Also we measured the resistance ($R_{gb}$) and capacitance ($C_{gb}$) of grain boundaries with temperature using impedance-modulus spectroscopy. It have discussed about the stability and homogeneity of grain boundaries using distribution parameter ($\alpha$) simulated with the Z"-logf plots with temperature.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
• /
• v.23 no.12
• /
• pp.936-941
• /
• 2010

In this study, we have investigated the effects of Mn dopant on the bulk trap levels and grain boundary characteristics of $Bi_2O_3$-based ZnO (ZB) varistor using admittance spectroscopy and dielectric functions (such as $Z^*,\;Y^*,\;M^*,\;\varepsilon^*$, and $tan\delta$). Admittance spectra and dielectric functions show two bulk traps of $Zn_i^{..}$ (0.20 eV) and $V^{\bullet}_o$ (0.29~0.33 eV) in ZnO-$Bi_2O_3-Mn_3O_4$ (ZBM). The barrier of grain boundaries in ZBM could be electrochemically single type. However, its thermal stability was slightly disturbed by ambient oxygen because the apparent activation energy of grain boundaries was changed from 0.79 eV at lower temperature to 1.08 eV at higher temperature. The grain boundary capacitance $C_{gb}$ was decreased slightly with temperature as 1.3~1.8 nF but resistance $R_{gb}$ decreased exponentially. The relaxation time distribution can result from the heterogeneity of the barriers constituting the varistor. It is revealed that Mn dopant in ZB reduced the heterogeneity of the barrier in grain boundaries and stabilized the barrier against the ambient temperature.

• Journal of the Korea Institute of Information and Communication Engineering
• /
• v.15 no.6
• /
• pp.1349-1354
• /
• 2011

In this work, we fabricated the CdZnS/CdTe heterojunction and investigated the C-V characteristics to determine the depletion width and the charge density distribution. A parallel experiment on CdS/CdTe heterojunction was also carried out for comparison. The depletion region width, for CdZnS/CdTe heterojunction, was nearly constant, regardless of bias voltage. However, the depletion region was wider than that of CdS/CdTe heterojunction due to high resistivity of CdZnS film. The interface charge density of CdZnS/CdTe heterojunction was increased linearly with the bias voltage and showed lower values than those for CdS/CdTe junction. The open circuit voltage of CdZnS/CdTe heterojunction solar cells increased with zinc mole ratio due to reducing of the electron affinity difference between CdZnS and CdTe films. However, the increase of series resistance due to the high resistivity of Cd1-xZnxS films results in reducing conversion efficiency.

• Proceedings of the Korean Vacuum Society Conference
• /
• 2013.02a
• /
• pp.344-344
• /
• 2013

칩의 크기가 감소함에 따라 RC (Resistance, Capacitance) 지연, 전력소비증가 및 신호잡음 등이 문제가 되어왔다. RC지연 문제는 배선에 알루미늄 보다 비저항이 낮은 구리를 사용하고 절연막으로 유전상수가 낮은 물질을 사용하여 개선될 수 있다. 이와 같은 맥락에서 점차 저유전상수 박막의 필요성은 증가하고 있다. 그러므로 이를 개선하기 위해 저 유전상수 값을 가지는 물질을 개발 혹은, UV나 플라즈마 그리고 열을 이용하여 처리하는 연구가 절실히 요구되고 있으며, 현재 많은 연구가 진행되고 있다. 이 논문에서 저유전박막은 HDP-CVD (High Density Plasma Chemical Vapor Deposition) 시스템에서 (CyOz)-SiHx와 O2의 비율을 각각 변화시키면서 증착 되었다. (CyOz)-SiHx와 O2의 비율은 60/150, 60/180, 60/210, 60/240로 증가하면서 증착하였다. 그리고 surface profilometer을 이용하여 박막의 증착율을 측정하고 LCR meter를 이용하여 정전용량을 측정하여 유전상수 값을 얻었다. 박막의 화학적 조성과 구조는 FTIR (Fourier Transform Infrared Spectroscopy)로 측정하였다. 박막의 유동 특성은 SEM (Scanning electron microscope) 이미지로 살펴보았다.

• Korean Chemical Engineering Research
• /
• v.54 no.3
• /
• pp.293-298
• /
• 2016

A hydrogel electrolyte consisting of 6 M KOH aqueous solution, potassium polyacrylate (PAAK, 3 wt.%), and a hydrophilic silica OX50 (1 wt.%) was prepared to use as an electrolyte medium coated on a Scimat separator of activated carbon supercapacitor. The silica particle distributed homogeneously on surface pores of the separator to increase ionic conductivity and electrochemical stability of the hydrogel electrolyte. The silica addition also involved superior specific capacitance even at higher scan rates due to decrease in interfacial resistance between hydrogel electrolyte and activated carbon electrode.

• Journal of the Korean Chemical Society
• /
• v.42 no.6
• /
• pp.664-671
• /
• 1998

Poly pyrrole polymer(ppy) has an excellent electrical conductivity and can be easily polymerized on anode to give various morophology according to doped anion on electroactive sites. To improve the properties of brittleness, ageing and hydrophobisity, poly furan polymer(pfu) having a high initiation potential was anodically implanted in this porous ppy film matrix to get the Pt/ppy/pfu(x)type of polymer composite electrode. Cyclic voltammetry and electrochemical impedance methods were used to these electrode, where $PF_6^-,\; BF_4^-$, and $ClO_4^-$ ions were employed as dopants. The composition of the pfu(x) at the electrode was changed from 0 to 1.10, but the range was useful only at 0.1 to 0.2 as the redox electrode. The polymer composite electrode doped with $PF_6^-$ was better in charge transfer resistance by a factor of 40 times and in double layer capacitance by a factor of 20 times than others. The charge transfer in the polymer film of the electrode was influenced on frequency change and equivalent circuit of this electrode had Warburg impedance including mass transfer.

• Journal of the Korean Institute of Telematics and Electronics C
• /
• v.36C no.5
• /
• pp.13-26
• /
• 1999

This paper presents a metric that can guide to optimal circuit models for interconnects among various models, given interconnect parameters and operating environment. To get this goal, we categorize interconnects into RC~c1ass and RLC-c1ass model domains based on the quantitative modeling error analysis using total resistance, inductance and capacitance of interconnects as well as operating frequency. RC~c1ass circuit models, which include most on~chip interconnects, can be efficiently analyzed by using the model~order reduction techniques. RLC-c1ass circuit models are constructed using one of three candidates, ILC(Iterative Ladder Circuit) macromodels, MC(Method of Characteristics) macromodels, and state-based convolution method, the selection process of which is based upon the allowable modeling error and electrical parameters of interconnects. We propose the model domain diagram leading to optimal circuit models and the division of model domains has been achieved considering the simulation cost of macromodels under the environmental assumption of the general purpose circuit simulator such as SPICE. The macromodeling method presented in this paper keeps the passivity of the original interconnects and accordingly guarantees the unconditional stability of circuit models.

• Journal of Electrochemical Science and Technology
• /
• v.2 no.2
• /
• pp.76-84
• /
• 2011

Potentiostatic oxidation of Pb-1.7%Sb alloy used in the manufacture of grids of lead-acid batteries over the potential range from -1.0V to 2.3V in 5M $H_2SO_4$ in the absence and the presence of 0.4M $H_3PO_4$ and the self-discharge characteristics of the oxide layer formed is studied by electrochemical impedance spectroscopy (EIS). Depending on the potential value, sharp variations in resistance and capacitance of the alloy are recorded during the oxidation and they can be used for identification of the various substances involved in passive layer. Addition of $H_3PO_4$ is found to deteriorate the insulating properties of the passive layer by the retardation of the formation of $PbSO_4$. $H_3PO_4$ completely inhibits the current and impedance fluctuations recorded in $H_3PO_4$-free solutions in the potential range 0.5 V-1.7 V. These fluctuations are attributed to the occurrence of competitive redox processes that involve the formation of $PbSO_4$, $PbOSO_4$, PbO and $PbO_2$ and the repeated formation and breakdown of the passive layer. Self-discharge experiments indicate that the amount of $PbO_2$ formed in the presence of $H_3PO_4$ is lesser than in the $H_3PO_4$-free solutions. The start of transformation of $PbSO_4$ into $PbO_2$ is greatly shortened. $H_3PO_4$ facilitates the diffusion process of soluble species through the passive layer ($PbSO_4$ and basic $PbSO_4$) but impedes the diffusion process through $PbO_2$.