• Journal of the Korean Institute of Illuminating and Electrical Installation Engineers
• /
• v.27 no.5
• /
• pp.74-80
• /
• 2013

This paper presents the transient behavior of the switching surge voltages generated by interruption of DC ground fault currents flowing through metal flexible conduits. All fault circuits consist of line parameters such as resistance, inductance, capacitance and conductance. The use of nonmagnetic metal conduits should be taken into account in order to reduce the inductance of battery charger distribution circuits. The frequency-dependent circuit parameters of metal flexible conduits were measured. The switching surge voltages generated at the ground fault circuit consisted of steel-galvanized alloy and aluminium conduits were investigated. As a result, the impedances of metal flexible conduits are significantly increased over the range of the frequency above 10 kHz and the switching surge voltages generated along aluminium flexible conduit are lower than those along steel-galvanized alloy conduit when DC fault current is interrupted.

• Journal of the Korea Institute of Information and Communication Engineering
• /
• v.18 no.12
• /
• pp.2933-2938
• /
• 2014

In this paper, the FLL(Frequency Locked Loop) circuit using current conveyor circuit is designed by $0.35{\mu}m$ CMOS process. The FLL circuit is built in a frequency divider, a frequency-to-voltage converter, a voltage subtractor and a oscillator and the circuit blocks have a symmetric structure to improve a reliability characteristics with a process variation. From the simulation results, the variation rate of output frequency is about less than ${\pm}1%$ when the channel length, channel width, resistance and capacitance are varied ${\pm}5%$.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
• /
• v.22 no.9
• /
• pp.737-740
• /
• 2009

SiC power device possesses attractive features, such as high breakdown voltage, high-speed switching capability, and high temperature operation. In general, device design has a significant effect on the switching characteristics, In this paper, we demonstrated that the switching performance of DMOSFETs are dependent on the with Channel length ($L_{channel}$) and Current Spreading Layer thickness ($T_{CSL}$) by using 2-D Mixed-mode simulations. The 4H-SiC DMOSFETs with a JFET region designed to block 800 V were optimized for minimum loss by adjusting the parameters of the JFET region, CSL, and epilayer. It is found that improvement of switching speed in 4H-SiC DMOSFETs is essential to reduce the gate-source capacitance and channel resistance. Therefore, accurate modeling of the operating conditions are essential for the optimizatin of superior switching performance.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
• /
• v.26 no.8
• /
• pp.620-623
• /
• 2013

The carbon nanotube / poly-vinylidene fluoride (CNT/PVDF) composite films for the nano-generator devices were fabricated by spray coating method using the CNT/PVDF solution, which was prepared by adding PVDF pellets into the CNT dispersed N-Methyl-2-pyrroli-done (NMP) solution. The flexible CNT/PVDF composite films were investigated by the scanning electron microscopy, which revealed that the CNTs were uniformly dispersed in the PVDF matrix and thickness of the films was approximately $20{\mu}m$. Fourier transform infra-red spectra were used to investigate crystal structure of the as-spray-coated CNT/PVDF films, and we found that they revealed extremely large portion of the ${\beta}$ phase PVDF. The capacitance of the CNT/PVDF films increased by adding CNTs into the PVDF matrix, and finally saturated. However, the resistance didn't show any saturation effect in the CNT concentration range of 0~4 wt%. Finally, the resulting nano-generator devices revealed reasonable current output after given mechanical stress.

• The Transactions of the Korean Institute of Electrical Engineers P
• /
• v.64 no.1
• /
• pp.29-34
• /
• 2015

DC bus electrolytic capacitors are used in variety of equipments as smoothing element of the power converters because it has high capacitance for its size and low price. It is responsible for frequent breakdowns of many static converters and inverter drive systems. Therefore it is important to diagnosis monitoring the condition of an electrolytic capacitor in real-time to predict the failure of power converter. In this paper, the on-line remote diagnosis monitoring system for DC BUS electrolytic capacitors of power converter using low-cost type Zigbee communication modules is developed. To estimate the health status of the capacitor, the equivalent series resistor(ESR) of the component has to be determined. The capacitor ESR is estimated by using RMS computation using AC coupling method of DC link ripple voltage/current. The Zigbee communication-based experimental results show that the proposed remote DC capacitor diagnosis monitoring system can be applied to DC/DC converter and UPS successfully.

• The Transactions of the Korean Institute of Electrical Engineers
• /
• v.43 no.3
• /
• pp.381-387
• /
• 1994

In this paper, we found the improved SPICE heat transfer modeling of impulsed magnetizing fixture system and investigated temperature characteristics using the proposed model. As the detailed thermal characteristics of magnetizing fixture can be obtained, the efficient design of the impulsed magnetizing fixture which produce desired magnet will be possible using our heat transfer modeling. The knowledge of the temperature of the magnetizing fixture is very important of forecast the characteristics of the magnetizing fixture which produce desired magnet will be possible using our heat transfer modeling. The knowledge of the temperature of the magnetizing fixture is very important to forecast the characteristics of the magnetizing circuits under different conditions. The capacitor voltage was not raised above 810[V] to protect the magnetizing fixture from excessive heating. The purpose of this work is to compute the temperature increasing for different magnetizing conditions. The method uses multi-lumped model with equivalent thermal resistance and thermal capacitance. The reliable results are obtained by using iron core fixture (stator magnet of air cleaner DC motor) coupled to a low-voltage magnetizer(charging voltage : 1000[V], capacitor : 3825[$\mu$F]. The modeling and experimental results are in close aggrement.

• Proceedings of the KIEE Conference
• /
• 2000.07d
• /
• pp.3124-3126
• /
• 2000

The application of IR(Infrared) communication is very wide and IR receiver has become a standard of home entertainment. A preamplifier with single 5V supply was designed for IR receiver IC. To operate at long distance, receiver IC should have high gain and low noise characteristic. To provide constant output signal magnitude, independent of transciever distance, gain limiting stage is needed. And to cut-off DC noise component effectively, large resistance and capacitance are required. Transimpedance type preamplifier, and diode limiting amplifier, and current limiting amplifier were designed. It is another function of current limiting amplifier that transforms single input signal to differential output signal. Using AMS BiCMOS model, both BJT version and MOS version was designed. Total power consumption is O.lmW, and IC size is $0.3mm^2$

• Journal of the Korean Solar Energy Society
• /
• v.30 no.6
• /
• pp.22-27
• /
• 2010

In photovoltaic system, the specifications of solar array is changed as open circuit voltage and short circuit current because of cell temperature and solar radiation. A boost converter of this system connects between output of photovoltaic system and DC link capacitor of grid connected inverter as controlling duty ratio. Therefore to supply stable voltage to the grid, a boost converter is need to keep certain voltage output. Considering the capacitance and the resistance of boost converter, this paper designed proper digital controller.

• Bulletin of the Korean Chemical Society
• /
• v.31 no.12
• /
• pp.3697-3702
• /
• 2010

We demonstrate that vertically aligned carbon nanotubes can be synthesized directly on tantalum substrate via water-assisted chemical vapor deposition and evaluate their properties as electrochemical capacitors. The mean diameter of the carbon nanotubes was $7.1{\pm}1.5\;nm$, and 70% of them had double walls. The intensity ratio of G-band to D-band in Raman spectra was as high as 5, indicating good quality of the carbon nanotubes. Owing to the alignment and low equivalent series resistance, the carbon nanotube based supercapacitors showed good rate performance. Rectangular shape of cyclic voltammogram was maintained even at the scan rate of > 1 V/s in 1 M sulfuric acid aqueous solution. Specific capacitance was well-retained (~94%) even when the discharging current density dramatically increased up to 145 A/g. Consequently, specific power as high as 60 kW/kg was obtained from as-grown carbon nanotubes in aqueous solution. Maximum specific energy of ~20 Wh/kg was obtained when carbon nanotubes were electrochemically oxidized and operated in organic solution. Demonstration of direct synthesis of carbon nanotubes on tantalum current collectors and their applications as supercapacitors could be an invaluable basis for fabrication of high performance carbon nanotube supercapacitors.

• The Transactions of the Korean Institute of Electrical Engineers C
• /
• v.55 no.12
• /
• pp.601-605
• /
• 2006

The resistance-capacitance (RC) delay of signals through interconnection materials becomes a big hurdle for high speed operation of semiconductors which contain multi-layer interconnections in smaller scales with higher integration density. Low-k materials are applied to the inter-metal dielectric (IMD) materials in order to overcome the RC delay. Relaxation continuum (RCT) model that includes neutral-species transport model have developed to model the etching process in a capacitively coupled plasma (CCP) device. We present the parametric study of the modeling results of a two-frequency capacitively coupled plasma (2f-CCP) with $N_2/H_2$ gas mixture that is known as promising one for organic low-k materials etching. For the etching of low-k materials by $N_2/H_2$ plasma, N and H atoms have a big influence on the materials. Moreover the distributions of excited neutral species influence the plasma density and profile. We include the neutral transport model as well as plasma one in the calculation. The plasma and neutrals are calculated self-consistently by iterating the simulation of both species till a spatio-temporal steady state profile could be obtained.