• Title/Summary/Keyword: Resistance-capacitance

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Design of a 94-GHz Single Balanced Mixer Using Planar Schottky Diodes with a Nano-Dot Structure on a GaAs Substrate

  • Uhm, Won-Young;Ryu, Keun-Kwan;Kim, Sung-Chan
    • Journal of information and communication convergence engineering
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    • v.14 no.1
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    • pp.35-39
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    • 2016
  • In this paper, we develop a 94-GHz single balanced mixer with low conversion loss using planar Schottky diodes on a GaAs substrate. The GaAs Schottky diode has a nanoscale anode with a T-shaped disk that can yield high cutoff frequency characteristics. The fabricated Schottky diode with an anode diameter of 500 nm has a series resistance of 21 Ω, an ideality factor of 1.32, a junction capacitance of 8.03 fF, and a cutoff frequency of 944 GHz. Based on this technology, a 94-GHz single balanced mixer was constructed. The fabricated mixer shows an average conversion loss of -7.58 dB at an RF frequency of 92.5 GHz to 95 GHz and an IF frequency of 500 MHz with an LO power of 7 dBm. The RF-to-LO isolation characteristics were greater than -32 dB. These values are considered to be attributed to superior Schottky diode characteristics.

Design and Implementation of X-Band Oscillator Using Compact Hairpin Resonator (소형화된 헤어핀 공진기를 이용한 X-대역 발진기의 설계 및 구현)

  • Kim, Gi-Rae
    • The Journal of the Korea institute of electronic communication sciences
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    • v.9 no.10
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    • pp.1131-1137
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    • 2014
  • In this paper, oscillator with compact hairpin resonator is used to design the local oscillator of X-band radar system. The proposed hairpin resonator is minimized by increasing capacitance of line end of conventional one. By this method, size can be minimized about 40% compared with the conventional resonator and also can improve phase noise characteristic. The result of oscillator using proposed hairpin resonator is measured in oscillating frequency of 9.05 GHz, output power of 2.47 dBm, and phase noise of -101.4 dBc/Hz. The fabricated oscillator in this paper can minimize design and it's planar structure makes it easy to design MMIC.

Process Optimization for Productivity Improvement during EDM machining of a micro-hole (마이크로 홀의 EDM 가공 시 생산성 향상을 위한 가공공정의 최적화)

  • Kwon, Won-Tae;Kim, Yeong-Chu
    • Journal of the Korean Society of Manufacturing Technology Engineers
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    • v.21 no.4
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    • pp.556-562
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    • 2012
  • Micro electrical discharge machining (${\mu}EDM$) has been used for non-conventional material removal. One drawback of ${\mu}EDM$ is low productivity. In this study, we tried to find the optimal machining conditions to manufacture the micro hole with an optimal machining time without loss of accuracy. Taguchi method was used to figure out the relation between machining parameters and characteristics of the process. It was found that the electrode wear, the entrance and exit clearance gave a significant effect on the diameter of the micro hole when the diameter of the electrode was identical. Grey relational analysis was used to determine the optimal machining condition for minimum machining time without loss of accuracy. The obtained optimal machining condition was the input voltage of 80V, the capacitance of 680pF, the resistance of $500{\Omega}$, the feed rate of $1.5{\mu}m$/s and the spindle speed of 2900rpm. The machining time was reduced to 48% without loss of accuracy under the optimal machining condition.

Measuring Methods for Two-dimensional Position Referring to the Target Pattern (참조패턴 기반의 2차원 변위 측정 방법론)

  • Jung, Kwang Suk;Lee, Sang Heon;Park, Sung-Jun
    • Journal of the Korean Society of Manufacturing Technology Engineers
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    • v.22 no.1
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    • pp.77-84
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    • 2013
  • In this paper, we review two-dimensional measuring methods referring to target patterns. The patterns consist of two linearly-repeated patterns or is designed repeatedly in two-dimension. The repeated properties are reflectivity, refractivity, air-gapping distance, capacitance, magnetic reluctance, electrical resistance and sloping gradient, etc. However, the optical methods are generally used for high speed processing and density, and their encoding principles are treated here. In case of two-dimensional pattern, as there is not inherently error between single units encoding the pattern except for the metrology frame errors, the end-effector position of an object accompanying the pattern can be measured with respect of the global frame without via error. Therefore, it is regarded as a substitute for laser interferometer with severe environmental constraints and has been applied to the high-accurate planar actuator.

Inductive Micro Displacement Detecting System with High Sensitivity and Low Linearity Error

  • Park, Dong-June;Park, In-Mook;Kim, Soo-Hyun
    • International Journal of Precision Engineering and Manufacturing
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    • v.2 no.3
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    • pp.54-60
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    • 2001
  • A newly designed inductive micro displacement detecting system is presented. The proposed inductive system consists of driving coils, position-detecting coils, cores, and closed-loop formed magnetic blocks. The cores and magnetic blocks are made of Mn-Zn ferrite. When AC sine wave is applied to the driving coils, the time derivative flux is generated within the system, and then induced voltages arise in the position-detecting coils according to the core\`s position. Putting the cores to be moved proportionally to the input displacement, the induced voltage is proportional to input displacement. The parameters that affect the system characteristics are turn ratio, air-gap size, excitation frequency, overlap area, load resistance, capacitance effect, and so forth. Based on the experimental results, the system parameters are selected in such a way as to have high sensitivity ad stable responses. The sensitivity of the proposed inductive displacement-detecting system is greater than 2800mV.V-1mm-1 and the linearity error is below $\pm$0.10% in the range of $\pm$200㎛.

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Characteristics of Gate Oxides with Cobalt Silicide Process (복합 코발트 실리사이드 공정에 따른 게이트 산화막의 특성변화)

  • Song, Oh-sung;Cheong, Seong-hwee;Yi, Sang-don;Lee, Ki-yung;Ryu, Ji-ho
    • Korean Journal of Materials Research
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    • v.13 no.11
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    • pp.711-716
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    • 2003
  • Gate length, height, and silicide thickness have all been shrinking linearly as device density has progressively increased over the years. We investigated the effect of the cobalt diffusion during the silicide formation process on the 60$\AA$-thick gate oxide lying underneath the Ti/Co and Co/Ti bilayers. We prepared four different cobalt silicides, which have similar sheet resistance, made from the film structure of Co/Ti(interlayer), and Ti(capping layer)/Co, and peformed the current-voltage, time-to-break down, and capacitance-voltage measurements. Our result revealed that the cobalt silicide process without the Ti capping layer allowed cobalt atoms to diffuse into the upper interface of gate oxides. We propose that 100$\AA$-thick titanium interlayer may lessen the diffusion of cobalt to gate oxides in 1500-$\AA$ height polysilicon gates.

Analysis for the conventional impedance of counterpoise using EMTP (EMTP를 이용한 매설지선의 규약접지임피던스 해석)

  • Kim, Jong-Ho;Joe, Jeong-Hyeon;Beak, Young-Hwan;Lee, Gang-Su;Lee, Bok-Hee
    • Proceedings of the Korean Institute of IIIuminating and Electrical Installation Engineers Conference
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    • 2009.10a
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    • pp.47-50
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    • 2009
  • When the lightning currents flow through the ground electrode, the grounding system should be evaluated by the grounding impedance rather than the ground resistance because a grounding system shows the transient impedance characteristic by the inductance of the ground electrode and the capacitance of the soil. The ratio of the peak values of electric potential and currents is the conventional impedance that shows the transient characteristic about impulse currents of the grounding system in a roundabout way. The grounding system having low conventional impedance is a fine grounding system with low electric potential when the lightning currents flow. In this paper the conventional impedance of the counterpoise is calculated by using the distributed parameter circuit model and embodied the distributed parameter circuit model by using the EMTP program The adequacy of the distributed parameter model is examined by comparing the simulated and the measured results. The conventional impedance of the counterpoise is analyzed for first short stroke and subsequent short stroke currents.

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A Load Identification Method for ICPT System Utilizing Harmonics

  • Xia, Chen-Yang;Zhu, Wen-Ting;Ma, Nian;Jia, Ren-Hai;Yu, Qiang
    • Journal of Electrical Engineering and Technology
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    • v.13 no.6
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    • pp.2178-2186
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    • 2018
  • Online identification of load parameters is the premise of establishing a stable and highly-efficient ICPT (Inductive Coupled Power Transfer) system. However, compared with pure resistive load, precise identification of composite load, such as resistor-inductance load and resistance-capacitance load, is more difficult. This paper proposes a method for detecting the composite load parameters of ICPT system utilizing harmonics. In this system, the fundamental and harmonic wave channel are connected to the high frequency inverter jointly. The load parameter values can be obtained by setting the load equation based on the induced voltage of secondary-side network, the fundamental wave current, as well as the third harmonic current effective value received by the secondary-side current via Fourier decomposition. This method can achieve precise identification of all kinds of load types without interfering the normal energy transmission and it can not only increase the output power, but also obtain higher efficiency compared with the fundamental wave channel alone. The experimental results with the full-bridge LCCL-S type voltage-fed ICPT system have shown that this method is accurate and reliable.

Nonvolatile Memory and Photovoltaic Devices Using Nanoparticles

  • Kim, Eun Kyu;Lee, Dong Uk
    • Proceedings of the Korean Vacuum Society Conference
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    • 2013.02a
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    • pp.79-79
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    • 2013
  • Quantum-structures with nanoparticles have been attractive for various electronic and photonic devices [1,2]. In recent, nonvolatile memories such as nano-floating gate memory (NFGM) and resistance random access memory (ReRAM) have been studied using silicides, metals, and metal oxides nanoparticles [3,4]. In this study, we fabricated nonvolatile memories with silicides (WSi2, Ti2Si, V2Si) and metal-oxide (Cu2O, Fe2O3, ZnO, SnO2, In2O3 and etc.) nanoparticles embedded in polyimide matrix, and photovoltaic device also with SiC nanoparticles. The capacitance-voltageand current-voltage data showed a threshold voltage shift as a function of write/erase voltage, which implies the carrier charging and discharging into the metal-oxide nanoparticles. We have investigated also the electrical properties of ReRAM consisted with the nanoparticles embedded in ZnO, SiO2, polyimide layer on the monolayered graphene. We will discuss what the current bistability of the nanoparticle ReRAM with monolayered graphene, which occurred as a result of fully functional operation of the nonvolatile memory device. A photovoltaic device structure with nanoparticles was fabricated and its optical properties were also studied by photoluminescence and UV-Vis absorption measurements. We will discuss a feasibility of nanoparticles to application of nonvolatile memories and photovoltaic devices.

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Circuit Modelling and Eigenfrequency Analysis of a Poly-Si Based RF MEMS Switch Designed and Modelled for IEEE 802.11ad Protocol

  • Singh, Tejinder;Pashaie, Farzaneh
    • Journal of Computing Science and Engineering
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    • v.8 no.3
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    • pp.129-136
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    • 2014
  • This paper presents the equivalent circuit modelling and eigenfrequency analysis of a wideband robust capacitive radio frequency (RF) microelectromechanical system (MEMS) switch that was designed using Poly-Si and Au layer membrane for highly reliable switching operation. The circuit characterization includes the extraction of resistance, inductance, on and off state capacitance, and Q-factor. The first six eigenfrequencies are analyzed using a finite element modeler, and the equivalent modes are demonstrated. The switch is optimized for millimeter wave frequencies, which indicate excellent RF performance with isolation of more than 55 dB and a low insertion loss of 0.1 dB in the V-band. The designed switch actuates at 13.2 V. The R, L, C and Q-factor are simulated using Y-matrix data over a frequency sweep of 20-100 GHz. The proposed switch has various applications in satellite communication networks and can also be used for devices that will incorporate the upcoming IEEE Wi-Fi 802.11ad protocol.