• Journal of Advanced Marine Engineering and Technology
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• v.35 no.8
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• pp.1117-1123
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• 2011

Ungrounded power systems are adopted onboard vessels which enable more stabilized power supply even in case of electric leakage to hull. If earthing faults happen at these systems, they make grounding impedances of power lines unbalanced each other on the three phases, resulting in high voltages to hull which can bring more possibilities of electric shocks and electric fires. This study focuses on how to configure a calculation module for transferring a grounded condition by lowered insulation resistance into a vector diagram of the voltages to hull. By using the module, the loci of neutral points were acquired to analyze how voltages to hull are affected by earthing faults and the distributed capacitances between power lines and hull. The suggested module was simulated and compared to the measured values from a test power system in good results.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.24 no.5
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• pp.422-426
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• 2011

Piezoelectric materials can be used to convert mechanical energy into electrical energy. In this study, we investigated the possibility of harvesting from mechanical vibration force using a high efficient piezoelectric material-polyvinylidene fluoride (PVDF). A piezoelectric energy harvesting system consists of rectifier, filter capacitor, resistance. The experiments were carried out with impacting force to PVDF film with the thickness of 1 ${\mu}m$. The output power was measured with change in the load resistance value from 100 ${\Omega}$ to 2.2 $M{\Omega}$. The highest power was obtained under optimization by selection of suitable resistive load and capacitance. A power of 0.3082 ${\mu}W/mm^2$ was generated at the external vibration force of 5 N (10 Hz) across a 1 $M{\Omega}$ optimal resistor. Also, the maximum power of 0.345 ${\mu}W/mm^2$ was generated at 22 ${\mu}F$ and 1 $M{\Omega}$. The developed system was expected at a solution to overcome the critical problem of making up small size energy harvester.

• The Transactions of The Korean Institute of Electrical Engineers
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• v.66 no.5
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• pp.800-805
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• 2017

The accelerated thermal ageing of CSPE (chlorosulfonated polyethylene) was carried out for 16.82, 50.45, and 84.09 days at $110^{\circ}C$, equivalent to 20, 60, and 100 years of ageing at $50^{\circ}C$ in nuclear power plants, respectively. As the accelerated thermally aged years increase, the insulation resistance and resistivity of the CSPE decrease, and the capacitance, relative permittivity and dissipation factor of those increase at the measured frequency, respectively. As the accelerated thermally aged years and the measured frequency increase, the phase degree of response voltage vs excitation voltage of the CSPE increase but the phase degree of response current vs excitation voltage decrease, respectively. As the accelerated thermally aged years increase, the apparent density, glass transition temperature and the melting temperature of the CSPE increase but the percent elongation and % crystallinity decrease, respectively. The differential temperatures of those are $0.013-0.037^{\circ}C$ and, $0.034-0.061^{\circ}C$ after the AC and DC voltages are applied to CSPE-0y and CSPE-20y, respectively; the differential temperatures of those are $0.011-0.038^{\circ}C$ and $0.002-0.028^{\circ}C$ after the AC and DC voltages are applied to CSPE-60y and CSPE-100y, respectively. The variations in temperature for the AC voltage are higher than those for the DC voltage when an AC voltage is applied to CSPE. It is found that the dielectric loss owing to the dissipation factor($tan{\delta}$) is related to the electric dipole conduction current. It is ascertained that the ionic (electron or hole) leakage current is increased by the partial separation of the branch chain of CSPE polymer as a result of thermal stress due to accelerated thermal ageing.

• The Journal of Korean Institute of Communications and Information Sciences
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• v.39B no.7
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• pp.440-448
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• 2014

A $4{\times}10$ Gb/s Transimpedance Amplifier (TIA) array is implemented in $0.13{\mu}m$ CMOS process technology, which will be used in the receiver of TWDM-PON system. A technology for bandwidth enhancement of a given $4{\times}10$ Gb/s TIA presented under inductor peaking technology and a single 1.2V power supply based low voltage design technology. It achieves 3 dB bandwidth of 7 GHz in the presence of a 0.5 pF photodiode capacitance. The trans-resistance gain is $50dB{\Omega}$, while 48 mW/ 1channel from a 1.2 V supply. The input sensitivity of the TIA is -27 dBm. The chip size is $1.9mm{\times}2.2mm$.

• Proceedings of the Materials Research Society of Korea Conference
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• 2010.05a
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• pp.48.2-48.2
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• 2010

The effect of additives as rare-earth in dielectric materials has been studied to meet the development trend in electronics on the miniaturization with increasing the capacitance of MLCCs (multi-layered ceramic capacitors). It was reported that the addition of rare-earth oxides in dielectrics would contribute to enhance dielectric properties and high temperature stability. Especially, dysprosium and thulium are well known to the representative elements functioned as selective substitution in barium titanate with perovskite structure. The effects of these additives on microstructure and electric properties were studied. The 0.8 mol% Dy doped $BaTiO_3$ and the 1.0 mol% Tm doped $BaTiO_3$ had the highest electric properties as optimized composition, respectively. According to the increase of rare-earth contents, the growth of abnormal grains was suppressed and pyrochlore phase was formed in more than solubility limits. Furthermore, the effect of two rare-earth elements co-doped $BaTiO_3$ on the dielectric properties and insulation resistance was investigated with different concentration. The dielectric specimens with $BaTiO_3-Dy_2O_3-Tm2O_3$ system were prepared by design of experiment for improving the electric properties and sintered at $1320^{\circ}C$ for 2h in a reducing atmosphere. The dielectric properties were evaluated from -55 to $125^{\circ}C$ (at $1KHz{\pm}10%$ and $1.0{\pm}0.2V$) and the insulation resistance was examined at 16V for 2 min. The morphology and crystallinity of the specimens were determined by microstructural and phase analysis.

• Applied Chemistry for Engineering
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• v.17 no.5
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• pp.539-546
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• 2006

A study on the polymerization of polyethylenedioxythiophene (PEDOT) and the carbonization process of a separator was carred out in order to apply conductive polymer PEDOT to the winding typed aluminum condenser as a solid electrolyte and a negative electrode. PEDOT was polymerized with ethylenedioxythiophene (EDOT) as a monomer and ferric-p-toluenesulfonate as an oxidizing agent. The separator of condenser element was carbonized to control its fibrous tissue for the purpose of making it easy to impregnate the PEDOT solution into the microporous etched pit of aluminum foil by preventing separator from concentrating the PEDOT solution on itself. The characteristics of condenser such as capacitance, dissipation factor, equivalent series resistance, and thermal resistance depended on a carbonization temperature and a carbonization time. It was found that a thickness and a density of the used separator were major parameters of carbonization process and the characteristics of condenser were affected by these parameters.

• Proceedings of the International Microelectronics And Packaging Society Conference
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• 2001.04a
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• pp.35-43
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• 2001

Flip chip assembly on organic substrates using ACAs have received much attentions due to many advantages such as easier processing, good electrical performance, lower cost, and low temperature processing compatible with organic substrates. ACAs are generally composed of epoxy polymer resin and small amount of conductive fillers (less than 10 wt.%). As a result, ACAs have almost the same CTE values as an epoxy material itself which are higher than conventional underfill materials which contains lots of fillers. Therefore, it is necessary to lower the CTE value of ACAs to obtain more reliable flip chip assembly on organic substrates using ACAs. To modify the ACA composite materials with some amount of conductive fillers, non-conductive fillers were incorporated into ACAs. In this paper, we investigated the effect of fillers on the thermo-mechanical properties of modified ACA composite materials and the reliability of flip chip assembly on organic substrates using modified ACA composite materials. Contact resistance changes were measured during reliability tests such as thermal cycling, high humidity and temperature, and high temperature at dry condition. It was observed that reliability results were significantly affected by CTEs of ACA materials especially at the thermal cycling test. Results showed that flip chip assembly using modified ACA composites with lower CTEs and higher modulus by loading non-conducting fillers exhibited better contact resistance behavior than conventional ACAs without non-conducting fillers. Microwave model and high-frequency measurement of the ACF flip-chip interconnection was investigated using a microwave network analysis. ACF flip chip interconnection has only below 0.1nH, and very stable up to 13 GHz. Over the 13 GHz, there was significant loss because of epoxy capacitance of ACF. However, the addition of $SiO_2filler$ to the ACF lowered the dielectric constant of the ACF materials resulting in an increase of resonance frequency up to 15 GHz. Our results indicate that the electrical performance of ACF combined with electroless Wi/Au bump interconnection is comparable to that of solder joint.

• Journal of the Institute of Electronics Engineers of Korea SD
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• v.37 no.12
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• pp.1-9
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• 2000

A new method, the external resistance method (ERM method), is proposed for accurate extraction of the gate bias-dependent effective channel carrier mobility (${\mu}_{eff}$) and separated parasitic source/drain resistances ($R_S$ and $R_D$) of n-channel MOSFET's. The proposed ERM method is applied to n-channel LDD MOSFETs with two different gate lengths ($W_m/L_m=30{\mu}m/0.6{\mu}m,\;30{\mu}m/1{\mu}m$) in the linear mode of current-voltage characteristics ($I_D-V_{GS},\;V_{DS}$). We also considered gate voltage dependence of separated $R_2$ and $R_D$ in the accurate modeling and extraction of effective channel carrier mobility. Good agreement of experimental data is observed in submicron n-channel LDD MOSFETs. Combining with capacitance-voltage characteristics, the ERM method is expected to be very useful for accurate and efficient extraction of ${\mu}_{eff},\;R_D,\;R_S$, and other characteristic parameters in both symmetric and asymmetric structure MOSFET's in which parasitic resistances are critical to the improvement of high speed performance and reliability.

• Proceedings of the Korean Society of Propulsion Engineers Conference
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• 2004.03a
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• pp.577-587
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• 2004

A coaxial pulsed plasma thruster (PPT) with a Teflon cavity was designed, and its performance characteristics were examined varying stored energy, cavity length and capacitance. The PPT was tested as the entire system including the discharge circuit, and the results were explained with both the transfer efficiency and the acceleration efficiency. The transfer efficiency is defined as the fraction of energy in capacitors supplied into plasma, and the acceleration efficiency as the fraction of energy supplied into plasma converted to thrust energy. To estimate these efficiencies, the equivalent plasma resistance was defined and calculated using energy conservation during discharge. The equivalent plasma resistance proportionally increased with cavity length, and therefore the current peak increased with decreasing cavity length. The energy density calculated by the transfer efficiency was increased with decreasing cavity length. As a result, higher acceleration efficiency and lower transfer efficiency were obtained with shorter cavity length. Accordingly, there was an optimal cavity length for the thrust efficiency. The specific impulse and the impulse bit per unit stored energy ranged from 390 s and 50 $\mu$ Ns/J for a cavity length of 34 mm to 825 s and 11 $\mu$ Ns/J for a cavity length of 4 mm when the stored energy was fixed to 21.4J. Thus, it was showed that the performance of this PPT approached that of electromagnetic-acceleration-type PPT with decreasing cavity length. The PPT achieved thrust efficiencies of 10-12% at 21.4 J and 6-7% at 5.35 J at cavity lengths between 14 mm and 29 mm.

• KIEE International Transactions on Electrophysics and Applications
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• v.11C no.3
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• pp.70-74
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• 2001

Admittance or impedance spectroscopy is one of the powerful tools to study dielectric relaxation and loss processes in organic and inorganic materials. In this study, the frequency dependent properties of an indium tin oxide/tris(8-hydroxyquinoline) aluminum($Alq_3$)/aluminum structure have been studied. The conductance of the $Alq_3$ film increases with the DC applied voltage up to 4V and decreases above 4V in the low frequency region. This indicates that the resistance of the device decreases with the applied bias due to the carrier injection enhancement, thereafter the injected carriers form the space charge and the additional injection of carriers is prevented. The Cole-Cole plot of the admittance takes a one-semicircle shape, which means that the device can be modeled as a parallel resistor-capacitor network. The resistance and capacitance were estimated as 8.62k${\Omega}$ and 2.7nF, respectively, at 3V in the low frequency region. The dielectric constant ( ${\epsilon}'$ ) of the $Alq_3$ film is independent of the frequency in the low frequency region below 100kHz, while the frequency dependency was observed at above 100kHz. The dielectric loss factor ( ${\epsilon}"$ ) of the $Alq_3$ film shows the dielectric dispersion below 100kHz and dielectric absorption in higher frequency domain. The dispersion is thought to be related to the hopping process of the carriers. The ${\epsilon}"$ is proportional to the reciprocal of the frequency. The dielectric relaxation time was extracted to about 0.318${\mu}s$ from the dielectric absorption spectrum.