• Proceedings of the KIEE Conference
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• 2004.11a
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• pp.153-156
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• 2004

An electric power efficiency of electrodeless fluorescent lamp has big relative property of gas in lamp, gas pressure, lamp formation, ingredients of magnetic substance and shape and action frequency etc. We used magnetic substance that open self examination material of electrodeless fluorescent lamp antenna. Ferrite that is used in this experiment was Mn-Zn type. We have examined resistance kind, impedance, Q-factor's frequency characteristic by ferrite. Impedance, resistance and capacitance did not show difference in start frequency 2.65 [MHz] but there was difference quantity. We could know Q-factor's difference according to material, and Q-factor's is important part of antenna design.

• The Transactions of the Korean Institute of Electrical Engineers P
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• v.59 no.4
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• pp.372-376
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• 2010

Electrolytic capacitors have been widely used in power electronics system because of the features of large capacitance, small size, high-voltage, and low-cost. Electrolytic capacitors, which is most of the time affected by aging effect, plays a very important role for the power electronics system quality and reliability. Therefore it is important to estimate the parameter of an electrolytic capacitor to predict the failure. The estimation of the equivalent series resistance(ESR) is important parameter in life condition monitoring of electrolytic capacitor. This paper proposes a simple technique to measure the ESR of an electrolytic capacitor. This method uses a switching DC/DC boost converter to measure the DC Bus capacitor ESR of power converter. Main advantage of the proposed method is very simple in technique, consumes very little time and requires only simple instruments. Simulation results are shown to verify the performance of the proposed method.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2003.11a
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• pp.464-468
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• 2003

Complex impedances with frequency and voltage variation were analyzed in $ITO/Alq_3(60nm)/Al$ device structure. At low frequency, complex impedance is mostly expressed by resistive component, and at the high frequency by resistance and capacitive component. We have also evaluated resistance, capacitance and permittivity.

• Journal of the Semiconductor & Display Technology
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• v.18 no.4
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• pp.120-123
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• 2019

The effect of surface plasmon on ZTO thin films was investigated. The phenomenon of depletion occurring in the interface of the ZTO thin film created a potential barrier and the dielectric layer of the depletion formed a non-mass particle called plasmon. ZTO thin film represents n-type semiconductor features, and surface current by plasma has been able to obtain the effect of improving electrical efficiency as a result of high current at positive voltage and low current at negative voltage. It can be seen that the reduction of electric charge due to recombination of electronic hole pairs by heat treatment of compound semiconductors induces higher surface current in semiconductor devices.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2009.06a
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• pp.131-131
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• 2009

Silicon Carbide (SiC) is a material with a wide bandgap (3.26eV), a high critical electric field (~2.3MV/cm), a and a high bulk electron mobility ($\sim900cm^2/Vs$). These electronic properties allow high breakdown voltage, high-speed switching capability, and high temperature operation compared to Si devices. Although various SiC DMOSFET structures have been reported so far for optimizing performances, the effect of channel dimension on the switching performance of SiC DMOSFETs has not been extensively examined. This paper studies different channel dimensons ($L_{CH}$ : $0.5{\mu}m$, $1\;{\mu}m$, $1.5\;{\mu}m$) and their effect on the the device transient characteristics. The key design parameters for SiC DMOSFETs have been optimized and a physics-based two-dimensional (2-D) mixed device and circuit simulator by Silvaco Inc. has been used to understand the relationship. with the switching characteristics. To investigate transient characteristic of the device, mixed-mode simulation has been performed, where the solution of the basic transport equations for the 2-D device structures is directly embedded into the solution procedure for the circuit equations. We observe an increase in the turn-on and turn-off time with increasing the channel length. The switching time in 4H-SiC DMOSFETs have been found to be seriously affected by the various intrinsic parasitic components, such as gate-source capacitance and channel resistance. The intrinsic parasitic components relate to the delay time required for the carrier transit from source to drain. Therefore, improvement of switching speed in 4H-SiC DMOSFETs is essential to reduce the gate-source capacitance and channel resistance.

• Korean Journal of Materials Research
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• v.24 no.6
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• pp.285-292
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• 2014

Commercial activated-carbon used as the electrode material of an electric double-layer capacitor (EDLC) was posttreated with various acids and alkalis to increase its capacitance. The carbon samples prepared were then heat-treated in order to control the amount of acidic functional groups formed by the acid treatments. Coin-type EDLC cells with two symmetric carbon electrodes were assembled using the prepared carbon materials and an organic electrolyte. The electrochemical performance of the EDLC was measured by galvanostatic charge-discharge, cyclic voltammetry, and electrochemical impedance spectroscopy. Among the various activated carbons, the carbon electrodes (CSsb800) prepared by the treatments of coconutshell-based carbon activated with NaOH and $H_3BO_5$, and then heat treated at $800^{\circ}C$ under a flow of nitrogen gas, showed relatively good electrochemical performance. Although the specific-surface-area of the carbon-electrode material ($1,096m^2/g$) was less than that of pristine activated-carbon ($1,122m^2/g$), the meso-pore volume increased after the combined chemical and heat treatments. The specific capacitance of the EDLC increased from 59.6 to 74.8 F/g (26%) after those post treatments. The equivalent series resistance of EDLC using CSsb800 as electrode was much lower than that of EDLC using pristine activated carbon. Therefore, CSsb800 exhibited superior electrochemical performance at high scan rates due to its low internal resistance.

• The Journal of Korean Institute of Electromagnetic Engineering and Science
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• v.14 no.7
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• pp.705-711
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• 2003

In this Paper, 2${\times}$100 $\mu\textrm{m}$ AlCaN/GaN HEMT's(on sapphire substrate) large signal model including thermal effect was extracted. An equation based empirical model was employed to make large signal model for convergence and high speed. Pulsed I-V measurement was performed to extract thermal resistance and capacitance. Power amplifiers with 9 mm and 15 mm AlCaN/GaN HEMTS were designed using scaled modeling results of 2${\times}$100 $\mu\textrm{m}$ device respectively. From comparisons between measured and simulated data, the model considering of thermal effects gave better agreement than without one. It demonstrates that thermal modeling must be performed for power amplifier that uses large size transistors.

• JSTS:Journal of Semiconductor Technology and Science
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• v.14 no.1
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• pp.1-7
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• 2014

A bidirectional transient voltage suppression (TVS) diode consisting of specially designed $p^--n^{{+}+}-p^-$ multi-junctions was developed using low temperature (LT) epitaxy and fabrication processes. Its electrostatic discharge (ESD) performance was investigated using I-V, C-V, and various ESD tests including the human body model (HBM), machine model (MM) and IEC 61000-4-2 (IEC) analysis. The symmetrical structure with very sharp and uniform bidirectional multi-junctions yields good symmetrical I-V behavior over a wide range of operating temperature of 300 K-450 K and low capacitance as 6.9 pF at 1 MHz. In addition, a very thin and heavily doped $n^{{+}+}$ layer enabled I-V curves steep rise after breakdown without snapback phenomenon, then resulted in small dynamic resistance as $0.2{\Omega}$, and leakage current completely suppressed down to pA. Manufactured bidirectional TVS diodes were capable of withstanding ${\pm}4.0$ kV of MM and ${\pm}14$ kV of IEC, and exceeding ${\pm}8$ kV of HBM, while maintaining reliable I-V characteristics. Such an excellent ESD performance of low capacitance and dynamic resistance is attributed to the abruptness and very unique profiles designed very precisely in $p^--n^{{+}+}-p^-$ multi-junctions.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.21 no.5
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• pp.440-446
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• 2008

To manufacture the MLCC with X7R for high voltage stability, $BaTiO_3-MgO-MnO_2-Y_2O_3$ with $(Ba_{0.4}Ca_{0.6})SiO_3$ glass frit was formulated. Based on this composition, the addition of $Er_2O_3$ showed that TCC(Temperature Coefficient Capacitance) at $85^{\circ}C$ was improved from 5 % to ${\sim}0\;%$, but the dielectric constant and IR (Insulation Resistance) were decreased. The glass frit improved the dielectric constant and IR, so the appropriate contents of $Er_2O_3$ and glass frit were 0.6 mol% and 1 wt%, respectively. It showed that the dielectric constant and RC constant were 2,550 and 2,000 (${\Omega}F$), respectively in the sintering condition at $1250^{\circ}C$ in PO2 $10^{-7}$ Mpa. The MLCC with $3.2{\times}1.6$ (mm) size and $1\;{\mu}F$ was also suited for X7R with the above composition.

• Journal of the Korean Society of Safety
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• v.26 no.3
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• pp.15-22
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• 2011

Explosion and fire cause about 30 reported industrial major accidents a year by ignition source which discharge of electrostatic generated to flammable gas, vapor, dust and mixtures. It brings economically and humanly very large loss that accident was caused by fire and explosion from electrostatic discharge. Thus, it is very important that electrostatic discharge energy is to be control below not to be igniting flammable mixtures. There are two kinds of analysis model for electrostatic discharge, human body model and machine model. Human body model is available the parameter of human's electrical equivalent that capacitance is 100 pF, resistance is $1.5k{\Omega}$. To simulate and visualize the electrostatic discharge from human body need a very expensive and high voltage simulator. In this paper, we measured the value of capacitance and resistance concerned with test materials and sizing of specimen and the value of charged voltage concerned with test specimen and distance to develop an electrostatic charge/discharge simulating tool for teaching with which concerned industrial employee and students. The result of experiments, we conformed that the minimum ignition energy of methane-oxygen mixtures meets well the equation $W=1/2CV^2$, and found out that the insulating material and sizing of equivalent value having human body mode are the poly ethylene of 200 mm and 300 mm of diameter. Developed electrostatic charge/discharge simulating tool has many merits; simple mechanism, low cost, no need of electric power and so on.