• Proceedings of the Korean Vacuum Society Conference
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• 2010.08a
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• pp.187-187
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• 2010

In this study, we investigated the effect of electrodes on resistance switching of TaOx film. Pt, Ni, TiN, Ti and Al metal electrodes having the different oxidation degree were deposited on TaOx/Pt stack. Unipolar resistance switching behavior in Pt or Ni/TaOx/Pt MIM stacks was investigated, but bipolar resistance switching behavior in TiN, Ti or Al /TaOx/Pt MIM stacks was shown. We investigated that the voltage dependence of capacitance was decreased with higher oxidation degree of metal electrodes. Through the C-V results, we expected that linearity ($\alpha$) and quadratic ($\beta$) coefficient was reduced with an increase of interface layer between top electrode and Tantalum oxide. Transmission Electron Microscope (TEM) images depicted the thickness of interface layer formed with different oxidation degree of top electrode. Unipolar resistance switching behavior shown in lower oxidation degree of top electrode was expected to be generated by the formation of the conducting path in TaOx film. But redox reaction in interface between top electrode and Tantalum oxide may play an important role on bipolar resistance switching behavior exhibited in higher oxidation degree of top electrode. We expected that the resistance switching characteristics were determined by oxidation degree of metal electrodes.

• Journal of the Korean Ceramic Society
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• v.24 no.3
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• pp.270-276
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• 1987

The microstructure and dielectric properties of a SrTiO3-based GBL (Grain Boundary Layer) capacitor were investigated. The 0.6 mol% Nb2O5 doped SrTiO3 was sintered for 3 hr at 1450$^{\circ}C$ in mixed gas(N2/H2) atmosphere. The Nb2O5 promoted the grain growth of the SrTiO3 ceramics was decreased with the amount of Nb2O5. The oxide mixture(PbO, Bi2O3, B2O3) were painted on the reduced specimen and fired at 1000$^{\circ}C$ to 1100$^{\circ}C$ in air. The penetrated oxide mixture into specimen were located in grain boundaries. A SrTiO3-based GBL capacitor had the apparent permittivity of about 3.0${\times}$104, the dielectric loss of 0.01-0.02, and insulating resistance of 108-109$\Omega$.cm. The capacitor had the stable temperature coefficient of capacitance and exhibited dielectric dispersion over 107 Hz. The capacitance-voltage measurements indicated that the grain boundary was composed of the continuous insulating layers.

• The Transactions of The Korean Institute of Electrical Engineers
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• v.58 no.7
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• pp.1386-1392
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• 2009

An analysis is presented for super-high-speed optical demodulation by an avalanche photodiode(APD) with electric mixing. A normalized gain is defined to evaluate the performance of the optical mixing detection. Unlike previous work, we include the effect of the nonlinear variation of the APD capacitance with bias voltage as well as the effect of parasitic and amplifier input capacitance. As a results, the normalized gain is dependent on the signal frequency and the frequency difference between the signal and the local oscillator frequency. However, the current through the equivalent resistance of the APD is almost independent of signal frequency. The mixing output is mainly attributed to the nonlinearity of the multiplication factor. We show also that there is an optimal local oscillator voltage at which the normalized gain is maximized for a given avalanche photodiode.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2001.07a
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• pp.680-683
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• 2001

The output characteristics of step-down piezoelectric transformer is changed by a structure of layers. In this paper, we simulated output characteristics of multi-layer piezoelectric transformers with variation of output layers. Also, fabricated piezoelectric transformers were compared with simulated data. From simulated piezoelectric transformers, the output voltage decreased with increasing number of layers. From these results, piezoelectric transformers were made and the output electrical power of the transformers was measured at resonance frequency and at other frequency. The electrical power of transformers was measured on each transformer's resonance mode. However, measured value of 12-layed transformer's output power was smaller than that of 6-layered transformer's one. It is supposed that internal capacitance and reactance of the piezoelectric transformer's were effected in this result. Therefore we need to connect other road resistance and capacitance in output circuit, in order to increase electrical power of transformers.

• Journal of the Microelectronics and Packaging Society
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• v.12 no.1 s.34
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• pp.77-85
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• 2005

Impedance spectroscopy was applied to low temperature polycrystalline Si in order to investigate the electrical/dielectric information in polycrystalline Si. By combined microstructure and impedance spectroscopy works, it was shown that the electrical information is sensitive to the corresponding microstructure, i.e., the grain size and distribution, judged from the capacitance vs. grain size relationship. At $360 mJ/cm^2$, the maximum in capacitance and the minimum in resistance correspond to the largest grain sizes of unimodal distribution in polycrystalline Si. The electrical/dielectric characterization is compared with Raman spectroscopic characterizations in terms of microstructure.

• Journal of Information Display
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• v.1 no.1
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• pp.29-31
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• 2000

A 21.6" a-Si:H TFT array for direct conversion X-ray detector with 2480 by 3072 pixels is successfully developed. To obtain X-ray image of satisfactory quality, a novel structure with a storage electrode on BCB is proposed. The structure reduces the parasitic capacitance of data line, which is one of the main sources of signal noise. Also, the structure shows greater resistance to failure than that of the conventional design.

• Proceedings of the KIEE Conference
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• 2002.07a
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• pp.145-147
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• 2002

In this paper, the improved fault locating method using distributed parameter which calculating the reduced voltage and current according to the ground capacitance in long transmission line was proposed. For the purpose of the fault locating algorithm non influenced source impedance, the loop method was used in the system modeling analysis. To enhance the fault locating, zero sequence of the fault current which is variable according to ground capacitance was not used but positive and negative sequence. System model was simulated using EMTP software. To verify the accuracy of proposed method, in different cases 64 sampled data per cycle was used and 160km and 300km long transmission line has fault resistance $0{\Omega}\;and\;100{\Omega}$ respectively was compared.

• JSTS:Journal of Semiconductor Technology and Science
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• v.3 no.1
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• pp.33-41
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• 2003

In this work, process optimization techniques for high frequency performance of HBTs are presented. The techniques are focused on reducing parasitic base resistance and base-collector capacitance, which are key elements determining the high frequency characteristics of HBTs. Several fabrication techniques, which can significantly reduce the parasitic elements of the HBTs for improved high frequency performance, are proposed and verified by the measured data of the fabricated devices.

• Journal of electromagnetic engineering and science
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• v.17 no.1
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• pp.34-38
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• 2017

In this paper, we propose an active tunable bandpass filter (BPF) for efficient spectrum sensing in the TV White Space (TVWS) band. By designing a narrow bandwidth, it is possible to improve the sensing probability. The basic circuit configuration involves switching the PIN diode compromising capacitor bank to change the capacitance of the LC resonant circuit. To cover the whole TVWS band effectively, we add a varactor diode, and the bandwidth is set to 25-MHz. We improve the insertion loss by using the active capacitance circuit. The tunable BPF in the TVWS band with a 20-MHz interval is designed to have 11 channels with a bandwidth of 25 MHz and a low insertion loss of 1.7-2.0 dB.

• Journal of the Korean Ceramic Society
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• v.28 no.3
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• pp.179-188
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• 1991

The semiconducting BaTiO3 ceramics used in this study were sintered in the reducing atomosphere(hydrogen gas) and neutral atmosphere(nitrogen gas), then were heat-treated in air to vary defect concentrations. In this experiment, the correlations between the composition analysis and electrical characteristics of these samples were investigated. When the BaTiO3 ceramics were sintered in N2 atmosphere, it was observed that the Ba contents near the interface were lower than that of the grain center, and these samples showed superior PTCR effects. From analysis of the resistivities of grains and grain boundaries by CIRM(Complex Impedance Resonance Method), it was confirmed that the PTCR effects were caused by the resistivity of grain boundaries. And from measurement of the capacitance at each temperature, the samples sintered in N2 atmosphere show the increase of room temperature resistance and the decrease of capacitance as a result of the increase of the charge depletion layers. This phenomenon agrees well with the cation deficiencies in the analytical results.