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Process Optimization for High Frequency Performance of InP-Based Heterojunction Bipolar Transistors  

Song, Yongjoo (Department of Electrical Engineering and Computer Science, Korea Advanced Institute of Science Technology (KAIST))
Jeong, Yongsik (Department of Electrical Engineering and Computer Science, Korea Advanced Institute of Science Technology (KAIST))
Yang, Kyounghoon (Department of Electrical Engineering and Computer Science, Korea Advanced Institute of Science Technology (KAIST))
Publication Information
JSTS:Journal of Semiconductor Technology and Science / v.3, no.1, 2003 , pp. 33-41 More about this Journal
Abstract
In this work, process optimization techniques for high frequency performance of HBTs are presented. The techniques are focused on reducing parasitic base resistance and base-collector capacitance, which are key elements determining the high frequency characteristics of HBTs. Several fabrication techniques, which can significantly reduce the parasitic elements of the HBTs for improved high frequency performance, are proposed and verified by the measured data of the fabricated devices.
Keywords
InP HBT; CDC technology; self-alignment; base-collector capacitance; base-pad isolation;
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