JSTS:Journal of Semiconductor Technology and Science

  • 제3권1호
  • /
  • Pages.33-41
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  • 2003
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  • 1598-1657(pISSN)
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  • 2233-4866(eISSN)
대한전자공학회 (The Institute of Electronics and Information Engineers)
권호 표지

Process Optimization for High Frequency Performance of InP-Based Heterojunction Bipolar Transistors

  • Song, Yongjoo (Department of Electrical Engineering and Computer Science, Korea Advanced Institute of Science Technology (KAIST)) ;
  • Jeong, Yongsik (Department of Electrical Engineering and Computer Science, Korea Advanced Institute of Science Technology (KAIST)) ;
  • Yang, Kyounghoon (Department of Electrical Engineering and Computer Science, Korea Advanced Institute of Science Technology (KAIST))
  • 발행 : 2003.03.01
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초록

In this work, process optimization techniques for high frequency performance of HBTs are presented. The techniques are focused on reducing parasitic base resistance and base-collector capacitance, which are key elements determining the high frequency characteristics of HBTs. Several fabrication techniques, which can significantly reduce the parasitic elements of the HBTs for improved high frequency performance, are proposed and verified by the measured data of the fabricated devices.

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참고문헌

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