• Structural Engineering and Mechanics
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• v.57 no.3
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• pp.403-423
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• 2016

The challenges involved with fatigue damage assessment of steel catenary riser (SCR) in the touchdown zone (TDZ) are primarily due to the non-linear behaviour of the SCR-seabed interaction, considerable uncertainty in SCR-seabed interaction modelling and geotechnical parameters. The issue of fatigue damage induced by the cyclic movements of the SCR with the seabed has acquired prominence with the touch down point (TDP) interaction in the TDZ. Therefore, the SCR-seabed response is critical for reliable estimation of fatigue life in the TDZ. Various design approaches pertaining to the lateral pipe-soil resistance model are discussed. These techniques have been applied in the finite element model that can be used to analyse the lateral SCR-seabed interaction under hydrodynamic loading. This study investigates the sensitivity of fatigue performance to geotechnical parameters through a parametric study. In this study, global analyses are performed to assess the influence of vertical linear seabed springs, the lateral seabed model and the non-linear seabed model, including trench evolution into seabed, seabed normalised stiffness, re-penetration offset parameter and soil suction resistance ratio, on the fatigue life of SCRs in the TDZ.

• Journal of Advanced Marine Engineering and Technology
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• v.40 no.2
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• pp.96-101
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• 2016

The thermal management of high-power LED components in an assembly structure is crucial for the stable operation and proper luminous function. This study employs numerical tools to determine the optimum thermal design in LEDs with a heat sink consisting of a crevice-type vapor-chamber heat pipe. The effects of the MCPCB are investigated in terms of the substrate thicknesses on which the LEDs are mounted. Further, different placement configurations in a system module are considered. This study found that for a confined area, a power of 40 W/LED is applicable to a high-power package. Furthermore, the thermal conductivity of dielectric layer materials should ideally be greater than 0.9 W/m.K. The temperature conditions of the vapor chamber in a heat pipe greatly affect the thermal performance of the system. At an offset distance of 9.0 mm and a $2^{\circ}C$ increase in the temperature of the heat pipe, the resulting maximum temperature increase is approximately $1.9^{\circ}C$ for each heat dissipation temperature. Finally, at a thermal conductivity of 0.3 W/m.K, it was found that the total thermal resistance changes dramatically. Above 1.2 W/m.K, the resistance change reduces exponentially.

• JSTS:Journal of Semiconductor Technology and Science
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• v.8 no.3
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• pp.251-263
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• 2008

In this paper, we report an analytical modeling and 2-D Synopsys Sentaurus TCAD simulation of ion implanted silicon carbide MESFETs. The model has been developed to obtain the threshold voltage, drain-source current, intrinsic parameters such as, gate capacitance, drain-source resistance and transconductance considering different fabrication parameters such as ion dose, ion energy, ion range and annealing effect parameters. The model is useful in determining the ion implantation fabrication parameters from the optimization of the active implanted channel thickness for different ion doses resulting in the desired pinch off voltage needed for high drain current and high breakdown voltage. The drain current of approximately 10 A obtained from the analytical model agrees well with that of the Synopsys Sentaurus TCAD simulation and the breakdown voltage approximately 85 V obtained from the TCAD simulation agrees well with published experimental results. The gate-to-source capacitance and gate-to-drain capacitance, drain-source resistance and trans-conductance were studied to understand the device frequency response. Cut off and maximum frequencies of approximately 10 GHz and 29 GHz respectively were obtained from Sentaurus TCAD and verified by the Smith's chart.

• Journal of IKEEE
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• v.23 no.2
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• pp.722-726
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• 2019

In this paper, we propose a low drop-out (LDO) regulator with improved power-supply rejection (PSR) characteristics in the high frequency region. In particular, an NMOS transistor with a high output resistance is added as a compensation circuit to offset the high frequency noise passing through the finite output resistance of the PMOS power switch. The elimination of power supply noise by the compensating transistor was explained analytically and presented as the direction for further improvement. The circuit was fabricated in a $0.35-{\mu}m$ standard CMOS process and Specter simulations were carried out to confirm the PSR improvement of 26 dB compared to the conventional LDO regulator at 10 MHz.

• Nuclear Engineering and Technology
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• v.55 no.9
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• pp.3164-3182
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• 2023

The CRUD on the fuel cladding under the pressurized water reactor (PWR) operating condition causes several issues. The CRUD can act as thermal resistance and increases the local cladding temperature which accelerate the corrosion process. The hideout of boron inside the CRUD results in axial offset anomaly and reduces the plant's shutdown margin. Recently, there are efforts to revise the acceptance criteria of emergency core cooling systems (ECCS), and additionally require the modeling of the thermal resistance effect of the CRUD during the performance analysis. There is an urgent need for the evaluation of the effect of the CRUD deposition on the cladding heat transfer under PWR operating conditions, but the experimental database is very limited. The experimental facility called DISNY was designed and constructed to analyze the CRUD-related multi-physical phenomena, and the performance analysis of the constructed DISNY facility was conducted. The thermal-hydraulic and water chemistry conditions to simulate the CRUD growth under PWR operating conditions were established. The design characteristics and feasibility of the DISNY facility were validated by the MARS-KS code analysis and separate performance tests. In the current study, detailed design features, design validation results, and future utilization plans of the proposed DISNY facility are presented.

• Proceedings of the IEEK Conference
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• 2002.06b
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• pp.145-148
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• 2002

In this paper, a voltage controlled oscillator (VCO) with automatic amplitude control is designed using a 0.35${\mu}{\textrm}{m}$ CMOS process. A cross-coupled PMOS pair is used for a negative resistance to compensate for the losses in the LC resonator, and an automatic\ulcorner amplitude control function is adapted to provide constant output power independent of the Q-factor of the LC resonator. The designed VCO operates in the 200MHz to 550MHz frequency range using different external resonators. The simulated phase noise is -128 dBc/Hz at 100KHz offset from the carrier frequency of 260MHz. It dissipates 0.㎽ from a 3V power supply. The area is 300${\mu}{\textrm}{m}$ x1201${\mu}{\textrm}{m}$.

• Proceedings of the IEEK Conference
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• 2001.06a
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• pp.421-424
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• 2001

In this paper, We have designed and fabricated VCO in two way, the common source and common gate circuit for I local oscillator of 60 GHz wireless LAN system. The VCO employed a GaAs MESFET for negative resistance and a varactor diode for frequency tuning. The common gate VCO was measured the phase noise -112 dBc/Hz at the 1 MHz frequency offset. The output power and the second harmonic frequency suppression were 7.81 dBm and -29.3 dBc when tuning voltage was 3V, respectively. The total size of VCO was 28.6$\times$12.14 $\textrm{mm}^2$.

• Proceedings of the Korean Vacuum Society Conference
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• 2012.02a
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• pp.209-209
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• 2012

High-efficient transparent conductive oxide (TCO) film-embedding Si heterojunction solar cells were fabricated. An additional doping was not applied for heterojunction solar cells due to the spontaneous junction formation between TCO films and an n-type Si substrate. Three different TCO coatings were formed by sputtering method for an Al-doped ZnO (AZO) film, an indium-tin-oxide (ITO) film and double stacks of ITO/AZO films. An improved crystalline ITO film was grown on an AZO template upon hetero-epitaxial growth. This double TCO films-embedding Si heterojunction solar cell provided significantly enhanced efficiency of 9.23% as compared to the single TCO/Si devices. The effective arrangement of TCO films (ITO/AZO) provides benefits of a lower front contact resistance and a smaller band offset to Si leading enhanced photovoltaic performances. This demonstrates a potential scheme of the effective TCO film-embedding heterojunction Si solar cells.

• Journal of the Korean institute of surface engineering
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• v.53 no.5
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• pp.207-212
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• 2020

Silver is an inexpensive precious metal and is used in various jewelry in Asia. Although silver has high potential, it has corrosion resistance that is vulnerable to boiling sulfuric acid and nitric acid. So, silver research is needed to prevent the corrosion with environment. But silver corrosion is not studied. sulfuric acid make the uniform corrosion and chloride ion make the pitting corrosion. ICCP inhibits the corrosion because it offset electrons. This study used a potential from - 4 V to 4 V to check the effect of potential. Corrosion rate is lowet at -1 V.

• Proceedings of the KIEE Conference
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• 2003.07c
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• pp.1955-1957
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• 2003

This paper presents a novel defected ground structure (DGS) and its application to a microwave oscillator. The presented oscillator is designed so as to use the suggested defected ground structure as a feedback loop inducing a negative resistance as well as a frequency-selective circuit. Applying the feedback loop between the drain and the gate of a FET device produces precise phase conversion in the feedback loop. The equivalent circuit parameters of the DGS are extracted by using a three-dimensional EM calculations and simple circuit analysis method. The implemented 1.07 GHz oscillator exhibits 0 dBm output power with over 15% dc-to-RF power efficiency and -106 dBc/Hz phase noise at 100 kHz offset from carrier.