• Journal of Sensor Science and Technology
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• v.31 no.6
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• pp.448-454
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• 2022

An intralaboratory comparison of the realization of the triple-point temperature of mercury, which is defined as -38.8344℃ on the international temperature scale of 1990 (ITS-90), was conducted at the Korea Research Institute of Standards and Science (KRISS), the national metrology institute of Korea. To this end, four triple-point-of-mercury cells were compared using the resistance ratio measurement of a standard platinum resistance thermometer to validate the calibration results obtained using the triple-point-of-mercury cells at KRISS. The triple-point temperatures of all the four cells, one of which is designated as the national standard cell, were within 0.3 mK of the national standard. Based on 13 experiments on the four triple-point-of-mercury cells, the uncertainty in the comparison of the triple-point-of-mercury cells was 0.08 mK, and the uncertainty in the realization of the triple-point temperature of mercury was 0.19 mK. The results of the intralaboratory comparison validated that utilizing any of the four triple-point-of-mercury cells would result in the realization of a temperature within 0.3 mK of the average value determined by two key international comparisons for the realization of -38.3844℃ following the ITS-90.

• Transactions of the Korean Society of Mechanical Engineers
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• v.7 no.4
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• pp.461-468
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• 1983

The series of experiments have been performed to study the transient heat transfer in air from a suddenly heated vertical thin wire. A platinum wire has been used as a resistance thermometer as well as a heating element to eliminate the disturbances in the measurements. The measured temperature as a function of time is compared with the calculated transient temperature with the aid of a pure conduction equation. The overshoot phenomena in terms of the Nusselt numbers have been detected and it is reasonable to define the delay time at which the onset of convection heat transfer occurs. The measured data are compared with the existing steady-state data and the agreements are reasonable within the comparable ranges.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 1996.05a
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• pp.224-227
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• 1996

Platinum thin films were deposited on Si-wafer by DC magnetron sputtering for RTD (Resistance Thermometer Devices). We investigated the physical and electrical characteristics of these films under various conditions, the input power, working vacuum, temperature of substrate and also after annealing these films. The deposition rate was increased with increasing the input power but decreased with increasing Ar gas pressure. The resistivity were decreased wish increasing the temperature of substrate and the annealing time at 1000$^{\circ}C$. At substrate temperature 300$^{\circ}C$, input power 7(w/$\textrm{cm}^2$), working vacuum 5mtorr and annealing conditions 1000$^{\circ}C$, 240 min we obtained 10.65${\mu}$Ω$.$cm, resistivity of Pt thin film closed to the bulk value.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.14 no.3
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• pp.228-233
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• 2001

This paper presents the optimized design, fabrication and thermal characteristics of micro-heaters for thermal MEMS (micro elelctro mechanical system) applications usign SOI (Si-on-insulator) and trench structures. The micro-heater is based on a thermal measurement principle and contains for thermal isolation regions a 10㎛ thick Si membrane with oxide-filled trenches in the SOI membrane rim. The micro-heater was fabricated with Pt-RTD (resistance thermometer device) on the same substrate by suing MgO as medium layer. The thermal characteristics of the micro-heater wit the SOI membrane is 280$\^{C}$ at input power 0.9W; for the SOI membrane with 10 trenches, it is 580$\^{C}$ due to reduction of the external thermal loss. Therefore, the micro-heater with trenches in SOI membrane rim provides a powerful and versatile alternative technology for improving the performance of micro-thermal sensors and actuators.

• Progress in Superconductivity
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• v.4 no.1
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• pp.80-85
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• 2002

In order to disseminate the IEC international standard of RRR measurement of Cu／Nb／-Ti composite superconductors, a measuring system was developed at KRISS. The system consisted of helium reservoir, base plate, thermometer, voltmeter and current source. The helium reservoir and base plate provided a stable temperature of a range from 4.2 K to 300 K and the voltmeter measured several order of $mutextrm{V}$ on specimen for obtaining RRR of the Cu／Nb-Ti composite superconductor. Three specimens of the Cu／Nb-Ti composite superconductors were measured using this system for characterizing their RRR. The resistance-temperature curves ortho specimens showed 10／sup -6／ to 10／sup -5／ Ohms near transition temperature and 10／sup -4／ to 10／sup -3／ Ohms at 293 K. The RRR values of the specimens were 145, 71 and 140, respectively.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.14 no.8
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• pp.658-662
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• 2001

This paper describes on the fabrication and characteristics of hot-film type micro-flowsensors integrated with Pt-RTD(resistance thermometer device) and micro-heater on the SOI(Si-on-insulator) membrane and trench structures, in which MGO thin-film was used as medium layer in order to improve adhesion of Pt thin-film to SiO$_2$ layer. Output voltages increased due to increase of heat-loss from sensor to external. The output voltage was 250 nV at N$_2$ flow rate of 2000 sccm/min, heating power of 0.3 W. The response time($\tau$:63%) was about 42 msec when input flow was step-input. The results indicated that micro-flowsensors with the SOI membrane and trench structures have properties of a high-resolution and ow consume power.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.13 no.7
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• pp.612-616
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• 2000

This paper describes on the fabrication and characteristics of hot-film type micro-flowsensors integrated with Pt-RTD(resistance thermometer device) and micro-heater on the Si membrane in which MgO thin-film was used as medium layer in order to improve adhesion of Pt thin-film to SiO$_2$layer. The MgO layer improved adhesion of Pt thin-film to SiO$_2$layer without any chemical reactions to Pt thin-film under high annealing temperatures. Output voltages increased due to increase of heat-loss from sensor to external. The output voltage was 82 mV at $N_2$flow rate of 2000 sccm/min heating power of 1.2 W. The response time($\tau$:63%) was about 50 msec when input flow was stepinput

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2000.07a
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• pp.569-572
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• 2000

This paper presents the optimized fabrication and thermal characteristics of micro-heaters for thermal MEMS applications using a SDB SOI substrate. The micro-heater is based on a thermal measurement principle and contains for thermal isolation regions a 10$\mu\textrm{m}$ thick silicon membrane with oxide-filled trenches in the SOI membrane rim. The micro-heater was fabricated with Pt-RTD(Resistance Thermometer Device)on the same substrate by using MgO as medium layer. The thermal characteristics of the micro-heater with the SOI membrane is 280$^{\circ}C$ at input Power 0.9 W; for the SOI membrane with 10 trenches, it is 580$^{\circ}C$ due to reduction of the external thermal loss. Therefore, the micro-heater with trenches in SOI membrane rim provides a powerful and versatile alternative technology for improving the performance of micro thermal sensors and actuators.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.18 no.8
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• pp.714-719
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• 2005

NiCr thin film was deposited by DC magnetron sputtering on $A;_2O_3$/Si substrate with NiCr (80:20) alloy target. NiCr thin films were annealed at $300^{\circ}C,\;400^{\circ}C,\;500^{\circ}C,\;600^{\circ}C,\;and\;700^{\circ}C$ for 6 hr in $H_2$ after annealing at $500^{\circ}C$ for 6hr in air atmosphere, respectively. To analyze NiCr thin film properties, the changes of its micro structure were Investigated through field emission scanning electron microscope (FESEM). X-ray photoelectron spectroscopy (XPS) was used to analyze a surface of NiCr thin film. Resistance of NiCr thin film was measured by 4-point probe technique. The generated heats were measured by infrared thermometer through the application of DC voltage (5 V/l2 V). NiCr thin film treated by gradational double annealing process had uniform and small grains. Maximum temperature generated heat by NiCr micro heater was $173^{\circ}C$. We expect that our results will be a useful reference in the realization of NiCr micro heater.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2003.05c
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• pp.19-22
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• 2003

For use in constructing highly sensitive thermal detectors, the present authors have been studying the preparation of Superconducting Flux Flow Sensor(SFFS). In this research, SFFS with five channel ($5{\mu}m$/1channel) has been fabricated based on the flux flow using high temperature superconducting thin films by the ICP etching technique. We have designed a bolometer based on the temperature dependence of the kinetic inductance of a superconducting flux flow thin film. In this paper examines the fabrications and flux flow resistance and thermometer responses of the highly sensitive sensor constructed of a thin YBCO film. It is also suggested that they will be applicable to a new type of flux flow sensor.