• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 1996년도 추계학술대회 논문집
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• pp.152-155
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• 1996

Platinum thin films were deposited on $Al_2$O$_3$substrate by DC magnetron sputtering for RTD(Resistance Thermometer Devices) temperature sensors. We made Pt resistance pattern on $Al_2$O$_3$substrate by lift-off method and fabricated Pt-RTD temperature sensors by using W-wire, silver epoxy and SOG(spin-on-glass). In the temperature range of 25~40$0^{\circ}C$, we investigated TCR(temperature coefficient of resistance) and resistance ratio of Pt-RTD temperature sensors. TCR values were increased with increasing the annealing temperature, time and the thickness of Pt thin films. Resistance values were varied lineally within the range of measurement temperature. At annealing temperature of 100$0^{\circ}C$, annealing time of 240min and thin film thickness of 1${\mu}{\textrm}{m}$, we obtained Pt-RDT TCR value of 3825ppm/$^{\circ}C$ closed to the Pt bulk value.

• 센서학회지
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• 제18권4호
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• pp.322-326
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• 2009

To estimate the measurement uncertainty for industrial platinum resistance thermometers(IPRTs) made with 3-wire connection, the immersion temperature profile was investigated using a liquid bath. Two types of IPRTs having lead wires made of silver and nickel were constructed and the immersion profiles were measured at temperatures from -50 $^{\circ}C$ to 250 $^{\circ}C$ using 3-wire and 4-wire method. As immersion depth and temperature increased, the resistances measured by 3-wire method increased linearly but not for 4-wire method. To calibrate a 3-wire IPRT, the immersion effect must be accounted for. We propose a linear equation to assess correctly the measurement uncertainty.

• 센서학회지
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• 제9권3호
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• pp.153-162
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• 2000

평형수소 삼중점 (13.8033 K)부터 물의 삼중점 (273.16 K) 온도영역에서 표준온도계로 사용되는 캡슐형 백금저항온도계를 일차 교정하려면 고순도 물질의 삼중점이 사용된다. 국제온도눈금-1990 (ITS-90)을 확립하기 위해 평형수소, 네온, 산소, 아르곤, 수은 및 물의 삼중점 중에서 평형수소의 삼중점을 제외한 5 개의 삼중점을 실현하였다. 각각의 삼중점에서 국제비교용으로 채택된 캡슐형 백금저항온도계 2대의 저항을 2회 반복하여 측정하였다. 측정된 삼중점에서의 합성표준불확도는 A형 불확도와 B형 불확도 평가방법을 고려하여 산출하였다. 한국표준과학연구원에서 ITS-90에 정의된 네온, 산소, 아르곤, 수은 및 물의 삼중점에서의 합성표준불확도 추정결과는 각각 0.18 mK, 0.14 mK, 0.14 mK, 0.24 mK 및 0.11 mK 이었다.

• 한국초전도ㆍ저온공학회논문지
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• 제5권1호
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• pp.123-127
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• 2003

For disseminating a ney IEC international standard of critical trmperature of NbTi,Nb$_3$Sn and Bi-2223 Composite Suterconductors, we develpted a measuring system and studied standardization of test method. The measuring system consisted of cryogenic reservoir, base plate, thermometer, voltmeter and current source. Various specimens of the Nbti, Nb$_3$Sn and Bi-2223 composite superconductors were tested using this system for measuring their critical temperatures. After measuring the resistance-temperature relation, the data were compensated with thermoelectric voltages for NbTi Nb$_3$Sn specimens. NbTi specimens showed 9.2 K ~ 9.5 K of transition temperature and Nb$_3$Sn specimen showed about 18 K. Bi-2223 specimens showed 104 K ~ 107 K of transition temperature.

• E2M - 전기 전자와 첨단 소재
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• 제9권9호
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• pp.911-917
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• 1996

Platinum thin films were deposited on Si-wafer by DC rnagnetron sputtering for RTD (resistance thermometer devices). We investigated the physical and electrical characteristics of these films under various conditions, the input power, working vacuum, temperature of substrate and also after annealing these films. The deposition rate was increased with increasing the input power but decreased with increasing Ar gas pressure. The resistivity and sheet resistivity were decreased with increasing the temperature of substrate and the annealing time at 1000.deg. C. At substrate temperature of >$300^{\circ}C$, input power of 7 w/cm$^{2}$, working vacuum of 5 mtorr and annealing conditions of 1000.deg. C and 240 min, we obtained 10.65.mu..ohm..cm, resistivity of Pt thin films and 3800-3900 ppm/.deg. C, TCR(temperature coefficient of resistance). These values are close to the bulk value. These results indicate that the Pt thin films deposited by DC magnetron sputtering have potentiality for the development of Pt RTD temperature sensor.

• 대한전기학회:학술대회논문집
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• 대한전기학회 1996년도 추계학술대회 논문집 학회본부
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• pp.242-244
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• 1996

Platinum thin films were deposited on Si-wafer by DC magnetron sputtering for RTD (Resistance Thermometer Devices). We investigated the physical and electrical characteristics of these films under various conditions, the input power, working vacuum, temperature of substrate and also after annealing these films. The Resistivity and Sheet Resistivity were decreased with increasing the temperature of substrate and the annealing time at $1000^{\circ}C$. At substrate temperature $300^{\circ}C$, input power 7(w/$cm^2$), working vacuum 5mtorr and annealing conditions $1000^{\circ}C$, 240min we obtained $10.65{\mu}{\Omega}{\cdot}cm$, Resistivity of Pt thin film and $3000{\sim}3900ppm/^{\circ}C$, TCR(temperature coefficient of resistance) closed to the bulk value.

• 한국전기전자재료학회논문지
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• 제13권6호
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• pp.509-513
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• 2000

The physical and electrical characteristics of MgO and Pt thin-films on it deposited by reactive sputtering and rf magnetron sputtering respectively were analyzed with annealing temperature and time by four point probe SEM and XRD. Under annealing conditions of 100$0^{\circ}C$ and 2 hr, MgO thin-film had the properties of improving Pt adhesion to SiO$_2$and insulation without chemical reaction to Pt thin-film and the sheet resistivity and the resistivity of Pt thin-film deposited on it were 0.1288 Ω/ and 12.88 $\mu$$\Omega$.cm respectively. We made Pt resistance pattern on SiO$_2$/Si substrate by life-off method and fabricated Pt thin-film type microheater for thermal microsensors by Pt-wire Pt-paste and SOG(spin-on-glass). In the temperature range of 25~40$0^{\circ}C$ we estimated TCR(temperature coefficient of resistance) and resistance ratio of thin-film type Pt-RTD(resistance thermometer device). We obtained TCR value of 3927 ppm/$^{\circ}C$ close to the bulk Pt value. Resistance values were varied linearly within the range of the measurement temperature. The thermal characteristics of fabricated thin-films type Pt micorheater were analyzed with Pt-RTD integrated on the same substrate. The heating temperature of Pt microheater could be up to 40$0^{\circ}C$ with 1.5 watts of the heating power.

• 센서학회지
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• 제6권2호
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• pp.81-86
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• 1997

DC 마그네트론 스퍼터링을 이용하여 측온저항체 온도센서용 백금박막을 $Al_{2}O_{3}$ 기판위에 증착시켰다. 열처리 온도, 시간이 증가할수록 박막의 비저항 및 면저항은 감소하였다. Lift-off 방법을 이용하여 $Al_{2}O_{3}$ 기판위에 백금 저항체를 만들었으며, 텅스텐 wire, 실버 에폭시 그리고 SOG를 이용하여 백금박막 측온저항체 온도센서를 제작하였다. $25{\sim}400^{\circ}C$의 온도범위에서 백금박막 측온저항체 온도센서의 저항온도계수와 저항 변화율을 조사한 결과, 열처리 온도, 시간 및 박막의 두께가 증가할수록 저항온도계수가 증가하였으며 측정 온도범위 내에서 저항값은 선형적인 변화를 보였다. 열처리 온도 $1000^{\circ}C$, 시간 240분 그리고 박막두께 $1{\mu}m$ 조건에서 백금의 벌크에 가까운 $3825ppm/^{\circ}C$의 저항온도계수값을 얻을 수 있었다.

• 한국정밀공학회지
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• 제26권11호
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• pp.41-46
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• 2009

We present experimental data on the time response behavior of industrial platinum resistance thermometers (IPRT) to help with the selection of proper sensors in industry and research laboratories. Time constants of IPRTs were measured using a method specified in ASTM standards. Two different sensors of different protecting sheath diameters were tested in air, water and silicon oil at temperatures from $0^{\circ}C$ to $200^{\circ}C$. The time constant was the smallest in water and the highest in air. As the test temperature increased, time constants tended to decrease at all heat conducting media. For different diameters of sheath of IPRT at the same temperature, it was found that the IPRT of larger diameter showed higher time constant in air, but the opposite dependence was observed in water and oil. From the measured results, it was suggested that the sensor diameter and heat conducting medium should be considered if one wants to select proper thermometer to measure the dynamic temperature change in industry and research area.

• 센서학회지
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• 제18권2호
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• pp.116-121
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• 2009

Pressure-controlled sodium heat pipe furnace was designed and fabricated, and its characteristics was investigated. Pressure control system was controlled within ${\pm}0.5\;Pa$ at 150 kPa and the stability of pressure was decreased to ${\pm}2.5\;Pa$, when the pressure-controlled system connected with the heat pipe. The melting curve of Ag fixed-point realized well by the adiabatic method using the pressure-controlled sodium heat pipe furnace and its accuracy showed ${\pm}2.27\;mK$ from the calculation of 20% to 80% at the plateau. The freezing curve of Ag fixed-point also realized and its plateau value was 2.23 mK lower than that of the melting curve.