• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.17 no.1
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• pp.65-69
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• 2004

We synthesized photoalignment material of high thermal resistance with hydroxyl aromatic polyimide, and studied the liquid crystal (LC) aligning capabilities on the photopolymer layers. Also, electro-optical (EO) performances for the twisted-nematic (TN)-liquid crystal display (LCD) photoaligned with linearly polarized UV exposure were investigated. A good LC alignment with UV exposure on the photopolymer surface can be obtained. However, the low pretilt angles were obtained below 1$^{\circ}$. The Voltage-transmittance (V-T) curve without backflow bounce in the photoaligned TN cell with UV exposure was observed. The response time of photoaligned TN cell was measured about 24 ms. Finally, The photoaligned TN cell has few hysteresis, and shows the residual DC voltage that is less.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2004.05a
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• pp.210-213
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• 2004

We synthesized photoalignment material of high thermal resistance with hydroxyl aromatic polyimide, and studied the liquid crystal (LC) aligning capabilities on the photopolymer layers. Also, electro-optical (EO) performances for the twisted-nematic (TN)-liquid crystal display (LCD) photoaligned with linearly polarized UV exposure were investigated. A good LC alignment with UV exposure on the photopolymer surface can be obtained. However, the low pretilt angles were obtained below $1^{\circ}$. The Voltage-transmittance (V-T) curve without backflow bounce in the photoaligned TN cell with UV exposure was observed. The response time of photoaligned TN cell was measured about 24 ms. Finally, The photoaligned TN cell has few hysteresis, and shows the residual DC voltage that is less.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2005.05a
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• pp.177-180
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• 2005

We have investigated electro-optical characteristics in three kinds of TN cells on the polyimide surface. Transmittance of no thermal stressed TN cells were better than that of thermal stressed TN cells. Also. the threshold voltage and the response time of thermal stressed TN cells were same that of no thermal stressed TN cells. There were little change of value in these TN cells. On the other hand. transmittances of TN cells on the polyimide surface decreased by increasing thermal stress time. Moreover. the residual DC of the thermal stressed TN cells on the polyimide surface showed the characteristics of thermal stressed TN cells were weakened as increasing thermal stress temperature and time. Therefore. thermal stability of TN cells were decreased gradually by giving high thermal stress for a long time.

• 한국정보디스플레이학회:학술대회논문집
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• 2005.07a
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• pp.415-418
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• 2005

To understand effects of carbon nanotubes (CNTs) dispersed in nematic liquid crystal (NLC) on electro-optic characteristic and orientation of the LC, we CNT-doped homogeneously-aligned NLC cells driven by in-plane field have been fabricated. The CNTs were aligned with a LC director from the initial state to below critical ac field, whereas the CNTs disturbed the LC director field above critical ac field. We observed motional textures in the form of vertical stripes in the local area between electrodes, which were associated with a deformation of the LC director orientation. This indicates that CNTs start vibrating three dimensionally with translational motion. Further, the hysterisis studies of voltage-dependent transmittance under dc electric field show that the amount of residual dc, which is related to image sticking problem in liquid crystal displays, is greatly reduced due to ion trapping by CNTS while keeping operating voltage and response time about the same compared to the un-doped LC cell.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2001.07a
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• pp.190-193
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• 2001

ZnO varistors have been widely used to protect power system and electronic system against overvoltages based on their excellent nonlinearity. In order to increase their protection capability, the fracture and protection technologies of arresters have to study according to their applications, namely ImA DC voltage, leakage currents, impulse residual voltages, withstanding capability to impulse surge, and energy absorption capability. ZnO varistors which have nonlinear current-voltage characteristic name a number of failure mechanism when ZnO elements absorb surge energies. Failure mode by thermal stress and Pin hole are among the most common failure mechanism at the high current surge current. In this study, the fracture mechaism of power arresters are introduced and protection technologies are researched. In particular the effect of thermal stress by surge currents to ZnO elements and methods against arc surge energy through withstand structure design of arrester are discussed.

• Journal of Magnetics
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• v.16 no.3
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• pp.246-252
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• 2011

A high-voltage power supply has been built for activation of the brain via stimulation using a Full Wave Cockroft-Walton Circuit (FWCW). A resonant half-bridge inverter was applied (with half plus/half minus DC voltage) through a bidirectional power transistor to a magnetic stimulation device with the capability of producing a variety of pulse forms. The energy obtained from the previous stage runs the transformer and FW-CW, and the current pulse coming from the pulse-forming circuit is transmitted to a stimulation coil device. In addition, the residual energy in each circuit will again generate stimulation pulses through the transformer. In particular, the bidirectional device modifies the control mode of the stimulation coil to which the current that exceeds the rated current is applied, consequently controlling the output voltage as a constant current mode. Since a serial resonant half-bridge has less switching loss and is able to reduce parasitic capacitance, a device, which can simultaneously change the charging voltage of the energy-storage condenser and the pulse repetition rate, could be implemented. Image processing of the brain activity was implemented using a graphical user interface (GUI) through a data mining technique (data mining) after measuring the vital signs separated from the frequencies of EEG and ECG spectra obtained from the pulse stimulation using a 90S8535 chip (AMTEL Corporation).

• Proceedings of the Korean Vacuum Society Conference
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• 1999.07a
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• pp.135-135
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• 1999

It is well known that Raman spectroscopy is powerful tool in analysis of sp3/sp3 bonding fraction in diamond-like carbon(DLC) films. Raman spectra of DLC film is composed of D-peak centered at 1350cm-1 and G-peak centered at 1530cm-1. The sp3/sp3 fraction is qualitatively acquired by deconvolution method. However, in case of DLC film, it is generally observed that G-peak position shifts toward low wavenumber as th sp3 fraction increases. However, opposite results were frequently observed in ta-C films. ta-C film has much higher residual compressive stress due to its high sp3 fraction compared to the DLC films deposited by CVD method. Effect of residual stress on G-peak position is most recommendable parameter in Raman analysis of ta-C, due to its smallest fitting error among many parameters acquired by peak deconvolution of symmetric spectra. In current study, the effect of residual stress on Raman spectra was quantitatively evaluated by free-hang method. ta-C films of different residual stress were deposited on Si-wafer by modifying DC-bias voltage during deposition. The variation of the G-peak position along the etching depth were observed in the free-hangs of 20~30${\mu}{\textrm}{m}$ etching depth. Mathematical result based on Airy stress function, was compared with experimental results. The more reliable analysis excluding stress-induced shift was possible by elimination of the Raman shift due to residual compressiove stress.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2003.05d
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• pp.57-60
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• 2003

Electro-Optical (EO) performances for the ion beam (IB) aligned twisted-nematic (TN)-liquid crystal display (LCD) with ion beam exposure on the new of diamond like carbon (DLC) thin film surface were investigated. Voltage-transmittance (V-T) curve and response time without backflow bounce in the ion beam aligned TN-LCD with ion beam exposure for 0.5 and 1min on the DLC thin film was observed. Also. the fast response time of ion beam aligned TN-LCD with ion beam exposure for 1min on the DLC thin film surface can be achieved. The residual DC voltage of the ion beam aligned TN-LCD on the DLC thin film surface was almost the same as that of the rubbing aligned TN-LCD on the polyimide(PI) surface.

• 한국정보디스플레이학회:학술대회논문집
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• 2005.07b
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• pp.1484-1486
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• 2005

To achieve the high reliability performance in IPS cell, finding a good combination of Liquid Crystal (LC) materials and Polyimide (PI) is very important as they play a key role in IPS cell. Several LC materials and PIs have been introduced for preparation of their different combinations. Electro optical characteristics such as voltage holding ratio, residual DC and AC image sticking have been investigated for the different system of the LC material and PI in the test panels in an attempt to find the effects on the display reliability performance and image sticking.1)3)

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 1999.11a
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• pp.637-639
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• 1999

ZnO varistors have been widely used to protect power system and electronic system against overvoltages based on their excellent nonlinearity. In order to increase their protection capability, ZnO varistors are chosen by several electrical parameters according to their applications, namely 1mA DC voltage, 1eakage currents, impulse residual voltages, withstanding capability to impulse surge, and energy absorption capability. But these Parameters have scattering properties due to the nonuniformity of electrical characteristics. In this study, the effect of the microstructrual nonuniformity on the surge absorption capability of ZnO varistors.