• Journal of Sensor Science and Technology
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• v.16 no.6
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• pp.475-483
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• 2007

This paper proposes a readout integrated circuit (ROIC) for $32{\times}32$ infrared focal plane array (IRFPA) detector, which consist of reference resistor, detector resistor, reset switch, integrated capacitor and operational amplifier. Proposed ROIC is designed using $0.35{\;}{\mu}m$ 2P-4M (double poly four metal) n-well CMOS process parameters. Low noise folded cascode operational amplifier which is a key element in the ROIC showed 12.8 MHz unity-gain bandwidth and open-gain 89 dB, phase margin $67^{\circ}$, SNR 82 dB. From proposed circuit, we gained output voltage variation ${\Delta}17{\};mV/^{\circ}C$ when the detector resistor varied according to the temperature.

• Journal of Aerospace System Engineering
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• v.9 no.1
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• pp.12-18
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• 2015

The inter-conversion between different control laws in flight has a lot of risk. The SWM(Switching Mechanism) including logic and stand-by mode is designed to analyze the transient response of aircraft during inter-conversion between different control laws, based on the in-house software for non-real-time and real-time simulation. The SWM applies the fader logic of TFS(Transient Free Switch) to minimize the transient response of an aircraft during the inter-conversion, and applies the reset '0' type of the stand-by mode to prevent surface saturation due to integrator effect in the disengaged flight control law. The transition time is also important to minimize the objectionable transient response in the inter-conversion, as well as the transition control law design. This paper addresses the results of non-real-time simulation for the characteristics of transient response to different transition time to select the adequate transient time, and the real-time pilot evaluation, using SSWM(Software Switching Mechanism) and HSWM(Hardware Switching Mechanism), which is met for Level 1 flying qualities and assures safety of flight.

• Journal of the Korea Safety Management & Science
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• v.13 no.1
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• pp.41-49
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• 2011

The automatic fire detection system is an important facility installed with focusing on minimizing the damage from a fire. This paper presents in the followings as the methods to reduce the false alarm of the automatic fire detection system; first, to prepare for legal standard so that revised legal standard can be applied to the fire fighting property prior to revision; second, to introduce the performance based fire detection protection design in the law based fire protection design; third, to maintain the wiring of worn-out detector; forth, to introduce an evaluation system to the education for the fire warden; fifth, to extend the standard of MTBF(meantime between failure) of the detector; sixth, to extend of installing the analog type detector; seventh, to improve the structure of reset switch.

• Journal of Drive and Control
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• v.15 no.4
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• pp.30-38
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• 2018

Electronic control units (ECUs) are currently popular, and have evolved further towards the high-end application of autonomous vehicles in the automotive industry. Such digital technologies have also become widespread, in agriculture and construction equipment. Likewise, transmission control of high-speed tracked vehicles is based on the transmission control unit (TCU), performing complex gear change control functions, and diagnostic algorithms (a TCU's self-diagnostic and reporting capability of malfunction data through CAN communication). Since all functions of TCU are implemented by embedded-software, it is hardly possible to analyze specifications by reverse engineering. In this paper a real-time transmission simulator adaptable to TCU is presented, for analysis of diagnosis algorithm and standards. Signal simulation circuits are deliberately designed considering electrical characteristics of TCU inputs and various analysis tools, such as analog input auto scan function, and global output enable switch, are implemented in software. Test results from hardware-in-the-loop simulator verify tolerance time for each error, as well as cause of fault, error reset conditions.

• Journal of the Korea Institute of Information and Communication Engineering
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• v.16 no.9
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• pp.1847-1855
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• 2012

A 1V 1.6-GS/s 6-bit flash analog-to-digital converter (ADC) with a clock calibration circuit is proposed. A single track/hold circuit with a bootstrapped analog switch is used as an input stage with a supply voltage of 1V for the high speed operation. Two preamplifier-arrays and each comparator composed of two-stage are implemented for the reduction of analog noises and high speed operation. The clock calibration circuit in the proposed flash ADC improves the dynamic performance of the entire flash ADC by optimizing the duty cycle and phase of the clock. It adjusts the reset and evaluation time of the clock for the comparator by controlling the duty cycle of the clock. The proposed 1.6-GS/s 6-bit flash ADC is fabricated in a 1V 90nm 1-poly 9-metal CMOS process. The measured SNDR is 32.8 dB for a 800 MHz analog input signal. The measured DNL and INL are +0.38/-0.37 LSB, +0.64/-0.64 LSB, respectively. The power consumption and chip area are $800{\times}500{\mu}m2$ and 193.02mW.

• Proceedings of the Korean Vacuum Society Conference
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• 2012.08a
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• pp.343-344
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• 2012

It has been known since the mid 1960s that Ag can be photodissolved in chalcogenide glasses to form materials with interesting technological properties. In the 40 years since, this effect has been used in diverse applications such as the fabrication of relief images in optical elements, micro photolithographic schemes, and for direct imaging by photoinduced Ag surface deposition. ReRAM, also known as conductive bridging RAM (CBRAM), is a resistive switching memory based on non-volatile formation and dissolution of a conductive filament in a solid electrolyte. Especially, Ag-doped chalcogenide glasses and thin films have become attractive materials for fundamental research of their structure, properties, and preparation. Ag-doped chalcogenide glasses have been used in the formation of solid electrolyte which is the active medium in ReRAM devices. In this paper, we investigated the nature of thin films formed by the photo-dissolution of Ag into Ge-Se glasses for use in ReRAM devices. These devices rely on ion transport in the film so produced to create electrically programmable resistance states. [1-3] We have demonstrated functionalities of Ag doped chalcogenide glasses based on their capabilities as solid electrolytes. Formation of such amorphous systems by the introduction of Ag+ ions photo-induced diffusion in thin chalcogenide films is considered. The influence of Ag+ ions is regarded in terms of diffusion kinetics and Ag saturation is related to the composition of the hosting material. Saturated Ag+ ions have been used in the formation of conductive filaments at the solid electrolyte which is the active medium in ReRAM devices. Following fabrication, the cell displays a metal-insulator-metal structure. We measured the I-V characteristics of a cell, similar results were obtained with different via sizes, due to the filamentary nature of resistance switching in ReRAM cell. As the voltage is swept from 0 V to a positive top electrode voltage, the device switches from a high resistive to a low resistive, or set. The low conducting, or reset, state can be restored by means of a negative voltage sweep where the switch-off of the device usually occurs.

• JSTS:Journal of Semiconductor Technology and Science
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• v.8 no.2
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• pp.128-133
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• 2008

Phase-change random access memory (PRAM) chip cell phase of amorphous state is rapidly changed to crystal state above 160 Celsius degree within several seconds during Infrared (IR) reflow. Thus, on-board programming method is considered for PRAM chip programming. We demonstrated the functional 512Mb PRAM with 90nm technology using several novel core circuits, such as metal-2 line based global row decoding scheme, PN-diode cells based BL discharge (BLDIS) scheme, and PMOS switch based column decoding scheme. The reverse-state standby current of each PRAM cell is near 10 pA range. The total leak current of 512Mb PRAM chip in standby mode on discharging state can be more than 5 mA. Thus in the proposed BLDIS control, all bitlines (BLs) are in floating state in standby mode, then in active mode, the activated BLs are discharged to low level in the early timing of the active period by the short pulse BLDIS control timing operation. In the conventional sense amplifier, the simultaneous switching activation timing operation invokes the large coupling noise between the VSAREF node and the inner amplification nodes of the sense amplifiers. The coupling noise at VSAREF degrades the sensing voltage margin of the conventional sense amplifier. The merit of the proposed sense amplifier is almost removing the coupling noise at VSAREF from sharing with other sense amplifiers.

• Journal of Power Electronics
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• v.7 no.4
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• pp.343-352
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• 2007

This paper proposes a modularized charge equalization converter for hybrid electric vehicle (HEV) lithium-ion battery cells, in which the intra-module and the inter-module equalizer are Implemented. Considering the high voltage HEV battery pack, over approximately 300V, the proposed equalization circuit modularizes the entire $M^*N$ cells; in other words, M modules in the string and N cells in each module. With this modularization, low voltage stress on all the electronic devices, below roughly 64V, can be obtained. In the intra-module equalization, a current-fed DC/DC converter with cell selection switches is employed. By conducting these selection switches, concentrated charging of the specific under charged cells can be performed. On the other hand, the inter-module equalizer makes use of a voltage-fed DC/DC converter for bi-directional equalization. In the proposed circuit, these two converters can share the MOSFET switch so that low cost and small size can be achieved. In addition, the absence of any additional reset circuitry in the inter-module equalizer allows for further size reduction, concurrently conducting the multiple cell selection switches allows for shorter equalization time, and employing the optimal power rating design rule allows fur high power density to be obtained. Experimental results of an implemented prototype show that the proposed equalization scheme has the promised cell balancing performance for the 7Ah HEV lithium-ion battery string while maintaining low voltage stress, low cost, small size, and short equalization time.

• Journal of the Korean Institute of Illuminating and Electrical Installation Engineers
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• v.17 no.2
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• pp.73-80
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• 2003

This Paper Proposes instantaneous following control method to control pulse modulation switching converter by using principle that reset time of integrator is inverse proportion in size of integrator input voltage. proposed control method acts of fixed frequency and control switch calculates time of become turn on and turn off using analog integrator. Duty ratio that express switching time of converter is depended on mean value of switching variable and following time consists in one cycle. Follow to do order exactly stationary state as well as transition state, and controller corrects mean value of control variable and control reference value and control as control error gets into zero. Proposed control method could experimented and know that experiment result and theory are agreeing well through this using the buck converter.

• Proceedings of the Korean Vacuum Society Conference
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• 2014.02a
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• pp.326-326
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• 2014

It has been known since the mid 1960s that Ag can be photodissolved in chalcogenide glasses to form materials with interesting technological properties. In the 40 years since, this effect has been used in diverse applications such as the fabrication of relief images in optical elements, micro photolithographic schemes, and for direct imaging by photoinduced Ag surface deposition. ReRAM, also known as conductive bridging RAM (CBRAM), is a resistive switching memory based on non-volatile formation and dissolution of a conductive filament in a solid electrolyte. Especially, Ag-doped chalcogenide glasses and thin films have become attractive materials for fundamental research of their structure, properties, and preparation. Ag-doped chalcogenide glasses have been used in the formation of solid electrolyte which is the active medium in ReRAM devices. In this paper, we investigated the nature of thin films formed by the photo-dissolution of Ag into Ge-Se glasses for use in ReRAM devices. These devices rely on ion transport in the film so produced to create electrically programmable resistance states [1-3]. We have demonstrated functionalities of Ag doped chalcogenide glasses based on their capabilities as solid electrolytes. Formation of such amorphous systems by the introduction of Ag+ ions photo-induced diffusion in thin chalcogenide films is considered. The influence of Ag+ ions is regarded in terms of diffusion kinetics and Ag saturation is related to the composition of the hosting material. Saturated Ag+ ions have been used in the formation of conductive filaments at the solid electrolyte which is the active medium in ReRAM devices. Following fabrication, the cell displays a metal-insulator-metal structure. We measured the I-V characteristics of a cell, similar results were obtained with different via sizes, due to the filamentary nature of resistance switching in ReRAM cell. As the voltage is swept from 0 V to a positive top electrode voltage, the device switches from a high resistive to a low resistive, or set. The low conducting, or reset, state can be restored by means of a negative voltage sweep where the switch-off of the device usually occurs.