• Title/Summary/Keyword: Removal process

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동전기-펜턴 토양정화공정에서 공정변수에 따른 분해성능 비교

  • 양지원;박지연;김상준;이유진
    • Proceedings of the Korean Society of Soil and Groundwater Environment Conference
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    • 2002.09a
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    • pp.239-242
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    • 2002
  • Removal of phenanthrene by electrokinetic (EK) method combined with Fenton-like process was studied in a model system. Sand and phenanthrene were selected as a model soil and a representative PAH. Sand was contaminated at the concentration of 500 mg phenanthrene/kg dry sand. Bentonite and kaolinite were inserted into the space between reservoir and contaminated soil. When hydrogen peroxide supplied to a soil system from the anode reservoir was transported through the soil by EK process, the Fenton-like reaction was occurred by naturally existing iron minerals in soil. When hydrogen peroxide was supplied into the system, it showed higher removal efficiency than when just water was used. Maximum removal efficiency of phenanthrene was 81.2 % for 7 days.

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동전기-패턴 공정에서 토양내 과산화수소의 거동 이해

  • 박지연;김상준;이유진;양지원
    • Proceedings of the Korean Society of Soil and Groundwater Environment Conference
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    • 2004.09a
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    • pp.191-194
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    • 2004
  • The concentration of hydrogen peroxide in soil and effluent was measured to understand the relationship between the profile of hydrogen peroxide and the removal efficiency of phenanthrene in an Electrokinetic-Fenton process. Electrokinetic phenomena were observed in two different conditions for 1, 2, 4, and 7 days; 3.5% and 10% hydrogen peroxide. The concentration of hydrogen peroxide in soil was high near the anode and decreased towards the cathode due to the direction of electroosmosis. The hydrogen peroxide concentration in effluent increased with time, but the value was lower than the initial. The removal efficiency of phenanthrene at 10% hydrogen peroxide was higher than the case at 3.5%. The removal efficiency after 7 days was high(> 97%) in both cases.

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The experimental study for high ammonia nitrogen removal using Bardenpho process with Methanol addition (메탄올주입에 의한 Bardenpho공법에서의 고농도 암모니아성 질소 제거에 관한 실험적 연구)

  • Lee, Byonghi
    • Journal of Korean Society of Water and Wastewater
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    • v.13 no.2
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    • pp.34-40
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    • 1999
  • Aerobic night-soil treatment effluent containing high concentration of ammonia nitrogen was treated to remove nitrogen using Bardenpho process with Methanol addition. The objective of this study was to investigate the feasibility of complete nitrogen removal at three different HRTs such as 6.25d, 5d, and 3.75d, respectively. At each HRT, the nitrogen removal efficiencies are 92%, 99% and 97% and the required amount of methanol are 3.05gMeOH/gN, 2.75gMeOH/gN, and 3.38gMeOH/gN, respectively. Specific nitrification rates are decreased proportional to HRT and are $0.022gNH_4^+-N/g\;MLVSS{\cdot}day$, $0.0332gNH_4^+-N/g\;MLVSS{\cdot}day$ and $0.051gNH_4^+-N/g\;MLVSS{\cdot}day$ and specific denitification rate are decreased proportional to HRT and are $0.0210g\;N/gMLVSS{\cdot}day$, $0.0330g\;N/gMLVSS{\cdot}day$ and $0.0525g\;N/gMLVSS{\cdot}day$, respectively.

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A Study on Corrective Polishing Using a Small Flat Type Polisher (소형 평면공구를 이용한 형상수정 폴리싱에 관한 연구)

  • Kim, Eui-Jung;Shin, Keun-Ha
    • Journal of the Korean Society for Precision Engineering
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    • v.19 no.1
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    • pp.99-106
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    • 2002
  • For the development of a ultra-precision CNC polishing system including on-machine measurement system, we study a corrective polishing algorithm. We calculated unit removal profiles for various flat type polishing tools and polishing tool positions. Using these results we simulate the corrective polishing process based on dwell time control. We calculate dwell time distributions and residual error of the polishing simulation method and the FFT calculation method. We test corrective polishing algorithm with an optical glass. The target removal shape is a sine wave that has amplitude 0.3 micro meters. We find this polishing process has a machining resolution of nanometer order and is effective for sub-micrometer order machining. This result will be used for the software development of the CNC polishing system.

ICS(Iron oxide Coated Sand)를 이용한 비소 제거

  • 최형진;장윤영;양재규
    • Proceedings of the Korean Society of Soil and Groundwater Environment Conference
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    • 2003.04a
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    • pp.314-317
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    • 2003
  • The overall objective of the adsorption study of arsenic was to elucidate the ability of iron coated sand(ICS), synthesized in the laboratory, to remove arsenic from polluted waters. Batch tests were conducted to provide a relation between arsenic removal and iron content of ICSs. The ICS, developed in the laboratory by coating iron onto the surface of ordinary sand by a simple and easy process has proved as an effective medium for use in removal of arsenic from waters over a wide range of particle sizes of ICS. The composite media is inexpensive to prepare and could serve as the basis of a useful arsenic removal process in variety settings.

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An Analysis on the Material Removal Mechanism of Chemical-Mechanical Polishing Process Part II: Dynamic Simulation (화학-기계적 연마 공정의 물질제거 메커니즘 해석 Part II: 동적 시뮬레이션)

  • Seok, Jong-Won;Oh, Seung-Hee
    • Journal of the Semiconductor & Display Technology
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    • v.6 no.3
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    • pp.1-6
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    • 2007
  • The integrated thermal-chemical-mechanical (TCM) material removal model presented in the companion paper is dynamically simulated in this work. The model is applied to a Cu CMP process for the simulation and the results of the three individual ingredients composing the model are presented separately first. These results are then incorporated to calculate the total material removal rate (MRR) of the Cu CMP. It is shown that the non-linear trend of MRR with respect to the applied mechanical power (i.e., non-Prestonian behavior), which is not well explained with the models established in principle on conventional contact mechanics, may be due to the chemical reaction(s) varying non-linearly with the temperature in the wafer.

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The effect of buffing on particle removal in Post-Cu CMP cleaning (Post-Cu CMP cleaning에서 연마입자 제거에 buffing 공정이 미치는 영향)

  • Kim, Young-Min;Cho, Han-Chul;Jeong, Hae-Do
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2008.06a
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    • pp.537-537
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    • 2008
  • Copper (Cu) has been widely used for interconnection structure in intergrated circuits because of its properties such as a low resistance and high resistance to electromigration compared with aluminuim. Damascene processing for the interconnection structure utilizes 2-steps chemical mechanical polishing(CMP). After polishing, the removal of abrasive particles on the surfaces becomes as important as the polishing process. In the paper, buffing process for the removal of colloidal silica from polished Cu wafer was proposed and demonstrated.

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Hierarchical Haze Removal Using Dark Channel Prior (Dark Channel Prior를 이용한 계층적 영상 안개 제거 알고리즘)

  • Kim, Jin-Hwan;Kim, Chang-Su
    • The Transactions of The Korean Institute of Electrical Engineers
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    • v.59 no.2
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    • pp.457-464
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    • 2010
  • The haze removal algorithm using dark channel prior, which was proposed by He et al., is an efficient algorithm and presents impressive results. But its high memory and computational requirements limit its applications. In this paper, we propose a method to improve the memory usage and calculation speed. We notice that the matting process accounts for most calculation time, so we replace the matting process with a fast bilateral filtering scheme. Using the bilateral filter, we can reduce the memory usage, but its computational complexity is still high. To reduce the computational complexity as well, we adapt a hierarchical structure for the bilateral filtering. Experimental results show that the proposed algorithm can remove haze in a picture effectively, while requiring much less computations than the He et al.'s method.

A study on Relationship between Pattern wafer and Blanket Wafer for STI-CMP (STI-CMP 공정을 위한 Pattern wafer와 Blanket wafer 사이의 특성 연구)

  • 김상용;이경태;김남훈;서용진;김창일;이우선;장의구
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 1999.05a
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    • pp.211-213
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    • 1999
  • In this paper, we documented the controlling oxide removal amount on the pattern wafer using removal rate and removal thickness of blanket wafer. There was the strong correlation relationship for both(correlation factor:0.7109). So, we could confirm the repeatability as applying for STI CMP process from the obtained linear formular. As the result of repeatability test, the difference of calculated polishing time and actual polishing time was 3.48 seconds based on total 50 lots. If this time is converted into the thickness, it is from 104$\AA$ to 167$\AA$. It is possible to be ignored because it is under the process margin.

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Adaptive method for the purification of zinc and arsenic ions contaminated groundwater using in-situ permeable reactive barrier mixture

  • Njaramba, Lewis Kamande;Nzioka, Antony Mutua;Kim, Young-Ju
    • International Journal of Advanced Culture Technology
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    • v.8 no.2
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    • pp.283-288
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    • 2020
  • This study investigated the purification process of groundwater contaminated with zinc and arsenic using a permeable reactive barrier with a zero-valent iron/pumice mixture. We determined the removal rates of the contaminants for 30 days. In this study, column reactor filled with the zero-valent iron/pumice reactive mixture was used. Experimental results showed that the mixture exhibited an almost complete removal of the zinc and arsenic ions. Arsenic was removed via co-precipitation and adsorption processes while zinc ions were asorbed in active sites.The purification process of water from the metal ionscontinued for 30 days with constant hydraulic conductivity because of the enhanced porosity of the pumice and interparticle distance between the zero-valent iron and pumice. Contaminants removal rates and the remediation mechanism for each reactive system are described in this paper.