• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 1999년도 추계학술대회 논문집
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• pp.602-605
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• 1999

We dried emitting layer of EL device at 30, 80, I20 and $150^{\circ}C$ for Ihr to investigate the effects to the emission characteristics of devices. PL intensity of P3HT thin film decreased with increasing the drying temperature. But, the EL intensity and stability of device with emitting layer dried at $150^{\circ}C$ were the best. We think it s because of absence of water and remaining solvent in P3HT emitting layer. So, We suggest that the drying temperature of emitting layer of EL device should be select slightly low temperature than its glass transition temperature.

• 한국정밀공학회지
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• 제11권5호
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• pp.153-160
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• 1994

In this study, residual stress and surface roughness were investigated experimentally to evaluate surface integrity on surface layer machined by CBN, ceramics and WC cutting tools. When machining difficult-to-cut material (hardened STD11 steel $H_{R}$C 60), residual stresses remaining in machined surface layer were mainly compressive. The increase of flank wear caused a shift of the compressive residual stress maximum to greater workpiece depths, but the changes did not penetrate the workpiece beneath a depth of 300 .mu. m. Surface roughness was influenced considerably by variations of the cutting speed and feed. In machining hard material, CBN and A1$_{2}$ $O_{3}$ ceramics cutting tool materials proved significantly superior to mixed ceramics A1$_{2}$ $O_{3}$-TiC and WC in evaluation of surface integrity.y.

• 한국표면공학회지
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• 제31권2호
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• pp.117-126
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• 1998

In this study, the residue remaining on the silicon wafer during the oxide overetching using $C_4F_8/H_2$ helicon were plasmas and effects of various cleaning and annealing methods on the removal of the remaining residue were investigated. The addition of 30%$H_2$ to the C4F8 plasma increased the C/F ratio and the thickness of the residue on the etched silicon surface. Most of the residuse on the etched surfaces colud be removed by the oxygen plasmsa cleaning followed by thermal annealing over $450^{\circ}C$. Hydrogen-coataining residue formed on the silicon by 70%$C_4F_8/30%H_2$ helicon plasmas was more easily removed than hydrogen-free residue formed residue formed by $C_4F_8$ helicon wear plasmas. However, damage remaining on the silicon surface overetched using 70%$C_4F_8/30%H_2$ helicon plasmas was intensive and the degree of reocvery duing the post-annealing was lower.

• 대한전기학회논문지:전기물성ㆍ응용부문C
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• 제48권8호
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• pp.577-579
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• 1999

DLC film remaining on device surface could be removed by eliminating AI sacrificial layer as a final step of lift-off process in the fabrication of DLC-coated Si-tip FEA. The field emission properties(I-V curves, hysteresis, and current fluctuation etc.) of the processed device were analyzed and the process was employed to 1.76 inch-sized FEA panel fabrication in order to evaluate its FED applicability.

• 대한치과의사협회지
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• 제11권3호
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• pp.199-203
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• 1973

Various concentration of formaldehyde solution (1%, 5%, 10%) were applied to cut pulp surface, for 3 minutes and the remaining pulp were carefully examined histo-pathologically. The result were as follows, 1. One week survival group which were treated by 1% formaldehyde solution showed seperation of odontoblast layer randomly and the weil's zone was undistinguishable. Deeper portion of this area was necrotic or coagulated. 2. Two week survival group which were treated 1% formaldehyde solution showed necrotic appearance spread from odontoblastic layer to weil's zone. 3. One and two week survival group which were treated 5% formaldehyde solution showed the odontoblastic layer was highly necrotic, under this zone empty net-work was seen. 4. One and two week survival group treated 10% formaldehyde solution showed complete destruction of pulp.

• 반도체디스플레이기술학회지
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• 제16권4호
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• pp.16-19
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• 2017

For the economical and environmental-friendly fabrication of polisher, Mo mask layer were sputtered on glass substrate instead of Cr mask material. Mo mask layers were sputtered by pulsed-DC sputtering and Photoresist patterns were formed on Mo mask layer for different develop times and optimized. After Mo mask layer were patterned and exposed glass was wet etched by HF solution for different etching times, the remaining Mo mask was stripped by using Al etchant. Develop time of 30 sec and HF wet etching time of 3 min were selected as optimized process condition and applied to the fabrication of polisher.

• Clinical and Experimental Reproductive Medicine
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• 제18권2호
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• pp.233-235
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• 1991

A total of 167 patients underwent mascroscopic vasovasostomy by a modified double layer reanastomosis to correct postvasectomy sterility during a 5-year period between 1986 and 1991. We obtained the anatomical patency and pregnancy rates from 61 patients whose follow-ups were completed. There by, we report the following results. 1. Of the 167 patients, the mean age and the average duration of vasobstruction were 34.0 and 4. 4 years respectively. The reasons for ecanalization were desire for more baby in 71.9%. death of children, 24.5% and remarriage in 3.6%. 2. Of the 61 patients with complete follow-up. the anatomical patency and pregnancy rates were 83.6%(51 patients) and 50.8%(31 patients) respectively. 3. For the 36 out of 61 patients whose duration of vasobstruction was less than 5 years, the anatomical patency and pregnancy rates were 88.9%(32 patients) and 58.3%(21 patients) respectively. The rates for the remaining 25 patients whose duration was greater than 5 years were 80.0%(20 patients) and 40.0%(10 patients). 4. Of the 61 patients, 51 exhibited sperms from the proximal vas on microscope during the operation. Their anatomical patency and pregnancy rates were 88.2%(45) and 54.9%(28) respectively. The rates for the remaining 10 patients without any sperms were 60.0%(6) and 30.0%(3). From the above results, we can conclude that macroscopic reanastomoses by modified double layer technique has appreciable success rates that could possibly be compared to the microscopic results.

• 약학회지
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• 제25권4호
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• pp.137-143
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• 1981

In order to confirm the exact antipyretic component in the earthworm, etherial extract of American earthworm(Red Worm) was fractionated into five fractions by using silica gel column chromatography and thin layer chromatography. The fraction including free fatty acids was found to possess artipyretic response and standard arachidonic acid showed marked antipyretic response on typhoid vaccinated rabbits. Arachidonic acid was identified from the free fatty acid fraction of the earthworm by using gas liquid chromatography. Thus it was considered that the antipyretic activity of the free fatty acid may be due to the presence of arachidonic acid. Lipid-free earthworm powder was extracted with phosphate buffer (pH, 8.0, 0.1M) and all the proteins was salted out by ammonium sulfate. The crude precipitate was dialyzed and the impure proteins were eliminated at pH 5.4 and 4.6. The remaining protein solution was fractionated with various concentrations of acetone. The acetone fractions were identified by using S.D.S. polyacrylamide gel electrophoresis and disc gel electrophoresis. The precipitate at 85% acetone concentration and the remaining proteins in the supernatant did not exhibit the antipyretic activity.

• Transactions on Electrical and Electronic Materials
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• 제10권2호
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• pp.62-65
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• 2009

YBCO-coated conductors, called "second-generation wires," show a remarkably greater increase in the amount or speed of their resistance than BSCCO wires when a quench occurs. This is probably because of the specific resistance at their stabilizer layer, which also affects their voltage grade. YBCO coated conductors with copper as a stabilizer layer have a voltage grade of 1.5-2 V/cm, and those with stainless steel as a stabilizer layer have a voltage grade of about 0.5-0.6 V/cm. The voltage grade of YBCO coated conductors is important in selecting and applying superconducting wires to power instruments later. In this study, two kinds of YBCO-coated conductors with different stabilizer layers and one kind of BSCCO wire were prepared. Among them, based on the YBCO coated conductors that had a stainless steel stabilizer layer with a low voltage grade, five kinds of experimental samples for joining were prepared with the remaining two kinds of wires. Using the prepared samples, the current application properties and the resistance increase in the flux-flow and the quench states of the single wire and the joined wires were compared.

• 한국표면공학회지
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• 제32권2호
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• pp.93-99
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• 1999

Surface polymer layer formed on the silicon wafer during the oxide overetching using $C_4F_8$/ helicon wave plasmas and their characteristics were investigated using spectroscopic elipsometry, X-ray photoelectron spectroscopy, and secondary ion mass spectrometry. Overetch percentage and dc-self bias voltage were varied to investigate the effects on the characteristics of the polymers remaining on the overetched silicon surface. The increase of bias voltage from -80 volts to -120 volts increased the C/F ratio and carbon bondings such as C-C, $C-CF_x$/, and C-Si in the polymer while reducing the thickness of the polymer layer. However, the increase of the overetch percentage from 50% to 100% did not change the composition of the polymer layer and the carbon bondings in the polymer layer remained same even though it increased the polymer thickness. The polymer layer formed at the higher dc-self bias voltage was more difficult to be removed by the following various post-etch treatments compared to that formed at the longer overetch percentage.