• Journal of the Korean Ceramic Society
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• v.33 no.11
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• pp.1292-1300
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• 1996

In-site X-ray diffraction measurements under electric field up to 20kV/ cm were carried out on PLZT (x/70/30) with x=7.5, 8.0, 8.5, and 10.5 All of PLZT belonged to cubic phases. At x=7.5, 8.0 and 8.5 PLZT behaved as an antiferroelectric under low electric fields up to 4-8 kV/cm. PLZT became ferroelectric at the higher electric fields. The high-temperature measurements on the dielectric constants of PLZT with x=7.5, 8.0 and 8.5 showed that they were similar to relaxor ferroelectrics and underwent a diffuse phase transition from antiferroelectrics to paraelectrics at 50-7$0^{\circ}C$. Their P-E hysteresis curves confirmed that they were antifer-roelectrics. The broad distribution of Curie points suggests that there is a significant disorder of cations and vacances in the crystal structure of those PLZT due to La-substitution. The variation of the lattice strain of PLZT(10.5/70/30) with electic field was very small and did not show any hysteresis confirming that it was paraelectric. The degree of the electric-induced strain variation decreased as La doping increased. In PLZT(7.5/70/30) the intensity of 110 reflection changes sensitively by applying electric field. Some domains with polarization parallel to [110] appeared to be developed in the field-induced ferroelectric phase of the PLZT.

• Journal of the Korean Ceramic Society
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• v.39 no.2
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• pp.159-163
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• 2002

A single phase perovskite relaxor ferroelectric PMN-PT-BT was prepared by a single calcination and the modified mixed oxide process. It was accomplished by ball-milling PbO, $Nb_2O_5,\;Ti(OC_3H_7)_4,\;BaCO_3,\;and\;Mg(NO_3)_2$ instead of MgO, removing the solvent, and then followed by calcination at 900$^{\circ}C$ for 2h. The specimen sintered at 1100$^{\circ}C$/2h showed the sintered density of 7.83 g/$cm^3$, room temperature dielectric constant of 22000, and dielectric loss of 2.5%. Addition of 1.0 mole% (0.3 wt%) of Ag as $AgNO_3$ and followed by calcination at 550$^{\circ}C$/2h lowered the sintering temperature to 900$^{\circ}C$. It still showed the sintered density of 7.88 g/$cm^3$, room temperature dielectric constant of 20000 and dielectric loss of 2.4%.

• Korean Journal of Materials Research
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• v.10 no.7
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• pp.478-481
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• 2000

Single phase $Pb(Mg_{1/3}Nb_{2/3})O_3$ ceramics doped by 10 mol% of electron donors such as $La^3,\; Pr^{3+,4+},\; Nd^{3+},\; Sm^{3+}$, were synthesized and their B-site cationic ordering structures were investigated by XRD and TEM. In the XRD patterns, only fundamental reflections were observed for the undoped $Pb(Mg_{1/3}Nb_{2/3})O_3$, while the (h/2 $\textsc{k}$/2ι/2)(h,$\textsc{k}$,ι all odd) superlattice reflections resulting from the 1:1 ordering induced unit cell doubling were also observed for the donor-doped $Pb(Mg_{1/3}Nb_{2/3})O_3$. In the TEM selected area diffraction patterns, the (h/2 k/2 l/2)(h,k,l all odd) superlattice reflection spots as well as the fundamental reflection spots were observed for all the samples, but the relative intensities of the superlattice reflection spots to the fundamental reflection spots were significantly enhanced by the donor-doping. In the TEM dark-field images, antiphase boundaries were observed only for the donor-doped $Pb(Mg_{1/3}Nb_{2/3})O_3$. It was therefore experimentally verified that doping by electron donors such as $La^3,\; Pr^{3+,4+},\; Nd^{3+},\; Sm^{3+}$, enhances the B-site cationic 1:1 ordering in $Pb(Mg_{1/3}Nb_{2/3})O_3$. These experimental results were interpreted in terms of the charge compensation mechanism.

• Korean Journal of Materials Research
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• v.22 no.1
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• pp.35-41
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• 2012

Presently, the most promising family of lead-free piezoelectric ceramics is based on $K_{0.5}Na_{0.5}NbO_3$(KNN). Lithium, silver and antimony co-doped KNN ceramics show high piezoelectric properties at room temperature, but often suffer from abnormal grain growth. In the present work, the $(Ba_{0.85}Ca_{0.15})(Ti_{0.88}Zr_{0.12})O_3$ component, which has relaxor ferroelectric characteristics, was doped to suppress the abnormal grain growth. To investigate this effect, Lead-Free $0.95(K_{0.5}Na_{0.5})_{0.95}Li_{0.05}NbO_3-(0.05-x)AgSbO_3-x(Ba_{0.85}Ca_{0.15})(Ti_{0.88}Zr_{0.12})O_3$[KNLN-AS-xBCTZ] piezoelectric ceramics were synthesized by ball mill and nanosized-milling processes in lead-Free $0.95(K_{0.5}Na_{0.5})_{0.95}Li_{0.05}NbO_3-(0.05-x)AgSbO_3$ in order to suppress the abnormal grain growth. The nanosized milling process of calcined powders enhanced the sintering density. The phase structure, microstructure, and ferroelectric and piezoelectric properties of the KNLN-AS ceramics were systematically investigated. XRD patterns for the doped and undoped samples showed perovskite phase while tetragonality was increased with increasing BCZT content, which increase was closely related to the decrease of TO-T. Dense and uniform microstructures were observed for all of the doped BCZT ceramics. After the addition of BCTZ, the tetragonal-cubic and orthorhombic-tetragonal phase transitions shifted to lower temperatures compared to those for the pure KNNL-AS. A coexistence of the orthorhombic and tetragonal phases was hence formed in the ceramics with x = 0.02 mol at room temperature, leading to a significant enhancement of the piezoelectric properties. For the composition with x = 0.02 mol, the piezoelectric properties showed optimum values of: $d_{33}$ = 185 pC/N, $k_P$ = 41%, $T_C=325^{\circ}C$, $T_{O-T}=-4^{\circ}C$.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.30 no.5
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• pp.183-188
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• 2020

Lead zinc niobate (PZN)-added lead zirconate titanate (PZT) thick films with thickness of 5~10 ㎛ were fabricated on silicon and sapphire substrates using aerosol deposition method. The contents of PZN were varied from 0 %, 20 % and to 40 %. The PZN-added PZT film showed poorer electrical properties than pure PZT film when the films were coated on silicon substrate and annealed at 700℃. On the other hand, the PZN-added PZT film showed higher remanent polarization and dielectric constant values than pure PZT film when the films were coated on sapphire and annealed at 900℃. The ferroelectric and dielectric characteristics of 20 % PZN-added PZT films annealed at 900℃ were compared with the result values obtained from bulk ceramic specimen with same composition sintered at 1200℃. As annealing temperature increased, dielectric constant increased. These came from enhanced crystallization and grain growth by post heat treatment.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.8 no.4
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• pp.667-672
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• 1998

Pyroelectric properties of $Pb(Mg_{1/3}Nb_{2/3})O_3-PbTiO_3$ ceramics prepared by the columbite precursor method have been investigated as a function of the sintering temperature in the range of $1000^{\circ}C$ to $1250^{\circ}C$. The $Pb(Mg_{1/3}Nb_{2/3})O_3-PbTiO_3$ ceramics show typical relaxor ferroelectric behavior. The optimum condition for obtaining samples with high densities and improved pyroelectric properties occur at a sintering temperature of $1250^{\circ}C$ and sintering times of 2 hours. The $Pb(Mg_{1/3}Nb_{2/3}O_3-PbTiO_3$ ceramics show the possibility for pyroelectric sensors with pyrostat.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.22 no.9
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• pp.766-771
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• 2009

Lead-free $0.94(Na_{0.5}K_{0.5})NbO_3$-0.06Ba$(Ti_{0.9}Sn_{0.1})O_3$ [0.94NKN-0.06BTS] ceramics doped with 1 mol% $MnO_2$ were synthesized by a conventional solid state method. The phase transitional behavior and piezoelectric properties of the ceramics sintered at various temperatures were investigated. The 0.94NKN-0.06BTS ceramics sintered at $1050^{\circ}C$, having morphotropic phase boundary of orthorhombic and tetragonal phases, exhibited a microstructure with abnormal grain growth. A diffused phase transition behavior for all the specimens was verified as high degree of diffuseness (${\gamma}$) values from 1.45 to 1.79. A high piezoelectric constant of $d_{33}=256$ pC/N and a satisfactory electromechanical coupling factor of $k_p=42%$ were obtained for the relatively dense 0.94NKN-0.06BTS ceramics sintered at $1050^{\circ}C$.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.37 no.4
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• pp.457-463
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• 2024

(Bi_1/2Na_1/2)TiO₃(BNT) piezoelectric ceramics are one of the promising materials that can replace Pb(Zr, Ti)O₃(PZT) piezoelectric ceramics due to the high electromechanical strain properties. However, it is still difficult to use practical applications because the required electric field for inducing electromechanical strain is relatively higher than that of PZT ceramics. To overcome this problem, it has been intensively studied on doping impurity or modifying other ABO₃ for BNT-based piezoelectric ceramics. Therefore, this study investigated the effects of La₂O₃ doping on the phase transition behavior and electromechanical strain properties in BNT-SrTiO₃ (BNT-ST) lead-free piezoelectric ceramics. In the case of the temperature-dependent dielectric properties, it was confirmed that a phase transition from ferroelectrics to relaxors is induced with increasing La₂O₃ content. As a result, the electromechanical strain properties of BNT-ST ceramics were improved. The highest S_max/E_max value corresponding to 300 pm/V was obtained at 2 mol% La₂O₃-dopped BNT-ST ceramics. Accordingly, this study successfully demonstrated that La₂O₃ doping is effective on the inducing phase transition from ferroelectrics to relaxors and the improving electromechanical strain properties of BNT-ST lead-free piezoelectric ceramics.