• Proceedings of the KIEE Conference
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• 1991.07a
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• pp.198-200
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• 1991

In this study we fabricated thin organic polymer films on the comb-electrode by plasma polymerization methode in electrode gas flow type reactor. The dielectric constant of polymer films were increased by increasing relative humidity and we used free volume theory in order to explain the mechanism of water absorption phenomena of polymer films.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 1995.11a
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• pp.22-24
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• 1995

The electrical conductivity of TiO$_2$doped ZnO was investigated by means of complex impedance measurement and voltage-current source and meaurement unit. The e1ectrical conductivity of TiO$_2$added ZnO was increased with increasing the concentration of TiO$_2$. The calculated relative dielectric constant was decreased with increasing the concentration of TiO$_2$. The increase of electrical conductivity seems to be the effect of TiO$_2$donor doping.

• Proceedings of the KIEE Conference
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• 2005.11a
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• pp.68-70
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• 2005

$SiO_2$ thin films are fabricated using sol-gel method and dipping method. Relative dielectric constant of thin films decreases a little according to increasing the measuring frequency. Tan ${\delta}$ of thin films increases a little below 100kHz and it increases rapidly over 100kHz.

• The Journal of the Institute of Internet, Broadcasting and Communication
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• v.20 no.1
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• pp.83-88
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• 2020

In this paper, H-polarized electromagnetic scattering problems by a conductive strip grating between a grounded double dielectric layer are analyzed by applying the FGMM(Fourier-Galerkin Moment Method) known as a numerical method of electromagnetic fileld. The boundary conditions are applied to obtain the unknown field coefficients, and the conductive boundary condition is applied to analysis of the conductive strip. The numerical results for normalized reflected power are analyzed by according as the width and spacing of conductive strip, the relative permittivity and thickness of the grounded double dielectric layers, and incident angles. Generally, as the value of the dielectric constant and dielectric thickness of a grounded double dielectric layer increases, the reflected power increased. And as dielectric thickness of a grounded double dielectric layer increases, the current density induced in the strip center increases. The numerical results for the presented structure of this paper are shown in good agreement compared to those of the existing papers using the PMM(Point Matching Method).

• Journal of the Korean Ceramic Society
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• v.46 no.3
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• pp.323-329
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• 2009

Influences of ceramic filler types and dose on the sintering, phase evolution, and dielectric properties of ceramic/CaO-$Al_2O_3-SiO_2$ glass composites were investigated. All of the specimens were sintered at $900^{\circ}C$ for 2 h, which conditions are required by the lowtemperature co-firing ceramic (LTCC) technology. Ceramic fillers of $Al_2O_3,\;SiO_2$, kaolin, and wollastonite were used. The addition of $Al_2O_3$ filler yielded the crystalline phases of alumina and wollastonite, and the densification over 95% of the relative density was achieved up to 50 wt% addition of the filler. For the cases of the fillers of $SiO_2$, kaolin, and wollastonite, crystalline phases of quartz, mullite, and wollastonite formed, while the densification decreased monotonically with the filler addition. In overall, all the investigated fillers with 10 wt% addition resulted in a reasonable sintering (over 95 %) and low dielectric constants (less than 6), demonstrating the feasibility of the investigated composites for application to a LTCC substrate material with a low dielectric constant.

• Transactions on Electrical and Electronic Materials
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• v.8 no.6
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• pp.241-245
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• 2007

[ $(Ba_{0.9-x}Sr_xCa_{0.10})TiO_3$ ] (x=0.33, 0.36) powders were prepared by sol-gel method. $(Ba,Sr,Ca)TiO_3$(BSCT) thick films, undoped and doped with $MnCO_3$ and $Yb_2O_3(0.1{\sim}0.7mol%)$, were fabricated by the screen printing method on the alumina substrate. The coating and drying procedure was repeated 6-times. The Pt bottom electrode was screen printing method on the alumina substrate. These BSCT thick films were annealed at $1420^{\circ}C$ for 2 hr in atmosphere. The upper electrodes were fabricated by screen printing the Ag paste and then firing at $590^{\circ}C$ for 10 min. And then the structured and dielectric properties as a function of the doping amount of $Yb_2O_3$ were studied. As a result of the TG-DTA, exothermic peak was observed at around $670^{\circ}C$ due to the formation of the polycrystalline perovskite phase. All BSCT thick films showed XRD patterns of typical cubic peroveskite structure. The average thickness of BSCT thick films was about $70^{\mu}m$. The curie temperature and the dielectric constant decreased with increasing $Yb_2O_3$ doped content and the relative dielectric constant of the specimen, doped with 0.5 mol% $Yb_2O_3$ at BSCT(54/36/10), showed a best value of 5018 at curie temperature.

• Korean Journal of Materials Research
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• v.3 no.5
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• pp.476-481
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• 1993

Microwave dielectric properties of $(Na_{1/2}{\;}La_{1/2})TiO_3$ (NLT) ceramics which is an A site complex perovskite structure are investigated. Dense sintered bodies are obtained when calcined at $1000^{\circ}C$ for 4h and then sintered in the temperature range between $1350^{\circ}{\;}and{\;}1450^{\circ}C$. NLT shows the bulk density of $4.95g/\textrm{cm}^3$, relative density of 96.4%, and a simple cubic structure with lattice constant(a) of 3.873$\AA$. Dielectric Constant(${\varepsilon}_r$) and quality factor Q increase as bulk density and average grain size increase respectively. NLT has the dielectric ${\varepsilon}_r=125$, Q=2842(fo=3 GHz), ${\tau}_f=465{\;}ppm/^{\circ}C$ when sintered at $1400^{\circ}C$ for 4h.

• The Transactions of the Korean Institute of Electrical Engineers C
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• v.51 no.5
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• pp.185-190
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• 2002

Capacitor material utilized in the downsizing passive devices and dynamic random access memory(DRAM) requires the physical and electrical properties at given area such as capacitor thickness reduction, relative dielectric constant increase, low leakage current and thermal stability. Common capacitor materials, $SiO_2$, $Si_3N_4$, $SiO_2$/$Si_3N_4$,TaN and et al., used until recently have reached their physical limits in their application to several hundred angstrom scale capacitor. $Ta_2O_{5}$ is known to be a good alternative to the existing materials for the capacitor application because of its high dielectric constant (25 ~35), low leakage current and high breakdown strength. Despite the numerous investigations of $Ta_2O_{5}$ material, there have little been established the clear understanding of the annealing effect on capacitance characteristic and conduction mechanism, design and fabrication for $Ta_2O_{5}$ film capacitor. This study presents the structure-property relationship of reactive-sputtered $Ta_2O_{5}$ MIM capacitor structure processed by annealing in a vacuum. X-ray diffraction patterns skewed the existence of amorphous phase in as-deposited condition and the formation of preferentially oriented-$Ta_2O_{5}$ in 670, $700^{\circ}C$ annealing. On 670, $700^{\circ}C$ annealing under the vacuum, the leakage current decrease and the enhanced temperature-capacitance characteristic stability. and the leakage current behavior is stable irrespective of applied electric field. The results states that keeping $Ta_2O_{5}$ annealed at vacuum gives rise to improvement of electrical characteristics in the capacitor by reducing oxygen-vacancy and the broken bond between Ta and O.

• Journal of the Korean Ceramic Society
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• v.33 no.11
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• pp.1267-1275
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• 1996

Green sheet was prepared by tape casting in the composition of (1-x)Pb(Mg1/3Nb2/3)O3-PbTiO3 system using Pb(Mg1/3Nb2/3)O3 and PbTiO3 synthesized with PbO, Nb2O5 MgO and TiO2 The densest green sheet was obtained in the weight ratio 70:30 of powder to binder. Green sheet wasmultilayered in metal mould and formed into lamination at 7$0^{\circ}C$, 300kg/cm2 The lamination was sintered at 110$0^{\circ}C$ 2hr, Dielectric constant and Curie temperature of disc type sintered body was highered with increasing the amount of PbTiO3 and was in the range of 19000-21000, -7~45$^{\circ}C$ respectively. Green and sintered relative density of lamination was 61% and 95% respectively.

• Journal of the Korean Ceramic Society
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• v.45 no.11
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• pp.681-687
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• 2008

The sintering and electrical properties of the hydrothermal PSZT powders obtained by substituting 4, 6 and 8mol% Sr for Pb in PZT lattice structure were investigated. The lattice constant and particle size decreased in proportion to a quantity of Sr. The sintering properties of PSZT powders showed $7.754g/cm^3$ of sintered density and $4{\mu}m$ of grain size at sintering temperature of $1250^{\circ}C$. Curie temperature lowered gradually from $363.6^{\circ}C\;to\;319.2^{\circ}C$ and relative dielectric constants increased rapidly by a quantity of Sr. In comparison to PZT, moreover, the quality factor of PSZT was increased more than three times with increase of Sr mole ratio, and piezoelectric constant $(d_{31}\;and\;g_{31})$ was decreased. It was found that dielectric loss of PSZT was decreased by 0.574% which was half of PZT.