• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 1992년도 추계학술대회 논문집
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• pp.110-113
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• 1992

This paper presents the results on experiments of relative dielectric constant dielectric loss, conductivity change and breakdown voltage of the L.D.P.E. mixed with Dodecyl Alcohol. The frequency range is 0.1 - 20 MHz and temperature, 20 - 80 $^{\circ}C$. Dielectric properties were similar to those of nonpolar polymers. Until $60^{\circ}C$ the conductivity value of compound was decreased with temperature increasment. And, its breakdown voltage was measured higher, about 3-4KV, than that of the pure L.D.P.E.. Also the amount of remnants of DA in the compounds were considered.

• 대한전기학회:학술대회논문집
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• 대한전기학회 1996년도 하계학술대회 논문집 C
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• pp.1516-1519
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• 1996

In this paper, a study on the electrical properties of ternary compound ceramics $[(1-y-x)BaTiO_{3}-ySrTiO_{3}-xMgTiO_3]$ fabricated 7 samples with each mol[%] by using the mixed oxide method. In this case, the sintering temperature were at $1,250[^{\circ}C]$ for 2[hr]. Also made ceramic capacitors from 7 samples, temperature coefficient of the capacitance and the variation of relative dielectric constants and loss with fixed frequency (1KHZ) were studied. In some ceramic capacitors, has shown very good properties of the dielectric constants and loss. In case of BSM-11 ceramic capacitor, is sure to the commercial capacitor which shows steady properties.

• 전자공학회논문지D
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• 제35D권10호
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• pp.51-59
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• 1998

(Na½Ln½) TiO₃(Ln = La, Pr, Nd, Sm)은 양의 온도계수(190 ∼ 480ppm/℃), 고유전율(99∼127)의 특성을 갖고 있다. 반면에 MgTiO₃는 음의 온도계수(-45ppm/℃), 저유전손실(110,000㎓)을 갖고 있다. 그래서 xMgTiO₃(1-x) (Na½Ln½) TiO₃의 유전특성에 관심을 갖게 되었고, 초고주파 대역에서의 유전특성을 측정하고 미세구조를 관찰하여, 몰비변화와 소결온도변화에 따른 경향성을 파악하였으며, 그 원인을 연구하였다. 그 결과 MgTiO₃와 (Na½Ln½) TiO₃는 구조적으로 새로운 고용체나 이차상을 형성하지 않는 혼합상을 이루고 있었다. 그리고 이들의 유전특성은 (Na½Ln½) TiO₃와 MgTiO₃의 중간 값을 나타냈고, logarithmic mixing rule로써 유전특성을 예측할 수 있다. 이중에서 온도에 안정한 조성은 Ln = La, Pr, Nd으로 치환되었을 경우 각각 x = 0.9, 0.87, 0.84이었다. 이때의 유전율은 22 ∼25, Qf값은 55000 ∼ 28000㎓를 나타내었다. 이로써 온도에 안정한 유전특성을 갖는 새로운 유전체 재료를 개발하였으며, 특히 Ln = La으로 치환되었을 경우 다른 조성에 비하여 유전특성이 좋을 뿐아니라, 소결온도 범위가 넓어 공정상의 잇점을 가지고 있다.

• 한국세라믹학회지
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• 제49권3호
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• pp.272-278
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• 2012

Effects of ceramics on the microwave dielectric properties of polytetrafluoroethylene (PTFE) composites filled with $MgTiO_3$ (MTi) and/or $MgTa_2O_6$ (MTa) were investigated. The dielectric constant ($K$), quality factor ($Qf$), and temperature coefficient of resonant frequency ($TCF$) of the composites were dependent on the type and volume fraction ($V_f$) of the ceramics. For the composites mixed with MTa and MTi, the $K$ and $TCF$ values decreased with increasing MTi content. The $Qf$ values of the composites were affected by relative density. The measured $K$ values of the composites were compared with those predicted by several theoretical models. Good microwave dielectric properties with values of $K$=3.6, $Qf$ = 7,788 GHz, and $TCF$ = -0.19 ppm/$^{\circ}C$ were obtained for the composites with 0.1 $V_f$ ceramics (mixed 0.025MTa and 0.075MTi).

• 한국재료학회지
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• 제19권2호
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• pp.90-94
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• 2009

The development of low-k materials is essential for modern semiconductor processes to reduce the cross-talk, signal delay and capacitance between multiple layers. The effect of the $CH_4$ concentration on the formation of SiOC(-H) films and their dielectric characteristics were investigated. SiOC(-H) thin films were deposited on Si(100)/$SiO_2$/Ti/Pt substrates by plasma-enhanced chemical vapor deposition (PECVD) with $SiH_4$, $CO_2$ and $CH_4$ gas mixtures. After the deposition, the SiOC(-H) thin films were annealed in an Ar atmosphere using rapid thermal annealing (RTA) for 30min. The electrical properties of the SiOC(-H) films were then measured using an impedance analyzer. The dielectric constant decreased as the $CH_4$ concentration of low-k SiOC(-H) thin film increased. The decrease in the dielectric constant was explained in terms of the decrease of the ionic polarization due to the increase of the relative carbon content. The spectrum via Fourier transform infrared (FT-IR) spectroscopy showed a variety of bonding configurations, including Si-O-Si, H-Si-O, Si-$(CH_3)_2$, Si-$CH_3$ and $CH_x$ in the absorbance mode over the range from 650 to $4000\;cm^{-1}$. The results showed that dielectric properties with different $CH_4$ concentrations are closely related to the (Si-$CH_3$)/[(Si-$CH_3$)+(Si-O)] ratio.

• 센서학회지
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• 제7권1호
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• pp.51-60
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• 1998

초전형 적외선센서를 제조하기 위하여 La가 첨가된 $PbTiO_{3}$(PLT)박편을 소결온도, La첨가량 및 소결시의 분위기분말의 양과 같은 제조조건을 달리하면서 제조하여 이에 따른 시편의 구조적 특성을 X-선 회절기, 전자현미경 및 상대밀도의 측정을 통하여, 유전특성을 유전상수와 큐리온도 등의 측정을 통하여 조사하였다. La 첨가랑이 증가함에 따라 정방성비 c/a는 감소하였으며, 상대밀도 및 입자의 크기는 증가하였다. 이는 La 첨가량이 증가함에 따라 전하중성을 유지하기 위한 Pb공공의 증가에 기인하는 것으로 판단된다. 소결시 분위기분말의 증가는 La 첨가에 따른 효과에 비해 미미하지만 정방성비를 미세하게나마 증가시켜 PbO의 휘발을 감소시키는 것으로 나타났다. La 첨가량에 따른 정방성비의 감소로 상온에서의 유전상수는 증가하였으며 큐리온도는 감소하였다.

• 한국인터넷방송통신학회논문지
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• 제19권4호
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• pp.21-26
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• 2019

본 논문에서는 2중 유전체층 사이의 저항띠 격자구조에 의한 TE(transverse electric) 산란 문제는 전자파 수치해석 방법으로 알려진 PMM(point matching method)를 이용하여 해석하였다. 경계조건들은 미지의 계수를 구하기 위하여 이용하였고, 산란 전자계는 Floquet 모드 함수의 급수로 전개하였고, 저항띠의 해석을 위해 저항 경계조건을 적용하였다. 저항띠의 폭과 주기, 2중 유전층 사이의 비유전율, 두께, 입사각 및 균일저항율에 대해 정규화된 반사과 투과전력을 계산하였다. 전반적으로, 도체 스트립에 대한 반사 전력은 비유전율의 값이 증가함에 따라 증가하였고, 균일저항율을 갖는 저항띠에 대한 반사 전력은 저항율의 값이 증가함에 따라 감소하였다. 본 논문의 제안된 구조에 대한 수치결과들은 기존 논문의 수치해석 결과들과 비교하여 매우 잘 일치하였다.

• 대한전기학회논문지
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• 제41권5호
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• pp.517-524
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• 1992

In this study, 0.10Pb(SbS11/2TSnS11/2T)OS13T-(0.90-x)PbZrOS13T (0.25 x 0.40) ceramics were fabricated by the atmospheric method. The sintering temperature and time were 1250[$^{\circ}C$] and 2[2hr], respectively. The structureal, dielectric and piezoelectric properties with composition of PbTiOS13T were studied. As the results of XRD ans SEM, the crystal structure of a specimen was rhombohedral, lattice constant and average grain size were decreased with increasing the contents of PbTiOS13T. Relative dielectric constant and Curie temperature were increased with increasing the contents of PbTiOS13T, 0.10PSS-0.40PT-0.50PZ specimen had the highest values of 904 and 265[$^{\circ}C$], respectively. In increasing of PbTiOS13T contents form 25[mol%] to 40[mol%], piezoelectric charge constant and electromechanical coupling factors were increased form 114[pC/N] to 142[pC/N], 17[%] to 24[%] and mechanical quality factor were decreased with increasing the contents of PbTiOS13T. In the 0.10PSS-0.40PT-0.50PZ specimens, those values were 14.2[kV/cm] and 9.43[x10S0-6TC/cmS02T], resectively.

• 한국세라믹학회지
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• 제49권1호
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• pp.100-104
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• 2012

Barium zincoborate (BZB) glass was added to $Ba_{0.5}Sr_{0.5}TiO_3$, and sintered at $875^{\circ}C$ for 2 h in air. When the BZB glass was added in quantities ranging from 15 to 20 wt%, the relative bulk density ranged from 93.1% to 94.2%, while the density decreased to roughly 81% thereafter up to 30 wt% glass addition. Quantitative XRD analysis showed that the $Ba_{0.5}Sr_{0.5}TiO_3$ filler was significantly dissolved into the BZB glass. However, no secondary phase was identified by XRD up to 30 wt% glass addition. The dielectric constant was about 130 to 140 at 1MHz up to 20 wt% BZB glass addition, while it decreased to about 60 thereafter, which may be ascribed to decreased density, partial dissolution of the $Ba_{0.5}Sr_{0.5}TiO_3$, and associated changes in the glass composition. The dielectric loss of the 20 wt% glass added specimen was 0.008.

• Transactions on Electrical and Electronic Materials
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• 제7권3호
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• pp.129-133
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• 2006

Ferroelectric PZT heterolayered thick films were fabricated by the alkoxide-based sol-gel method. PZT(20/80) and PZT(80/20) paste were made and alternately screen-printed on the alumina substrates. The coating and drying procedure was repeated 4 times to form the heterolayered thick films. The thickness of the PZT heterolayered thick films was approximately $60{\mu}m$. All PZT thick films showed the typical XRD patterns of a polycrystalline rhombohedral structure. And in the PZT thick films sintered at $1100^{\circ}C$, the pyrochlore phase was observed due to the evaporation of PbO. The relative dielectric constant and the dielectric loss of the PZT thick films sintered at $1050^{\circ}C$ were 445.2 and 1.90 % at 1 kHz, respectively. The remanent polarization and coercive field of the PZT thick films sintered at $1050^{\circ}C$ were $14.15{\mu}C/cm^2$ and 19.13 kV/cm, respectively.