• Title/Summary/Keyword: Reflow temperature

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Some Characteristics of Anisotropic Conductive and Non-conductive Adhesive Flip Chip on Flex Interconnections

  • Caers, J.F.J.M.;De Vries, J.W.C.;Zhao, X.J.;Wong, E.H.
    • JSTS:Journal of Semiconductor Technology and Science
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    • v.3 no.3
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    • pp.122-131
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    • 2003
  • In this study, some characteristics of conductive and non-conductive adhesive inter-connections are derived, based on data from literature and own projects. Assembly of flip chip on flex is taken as a carrier. Potential failure mechanisms of adhesive interconnections reported in literature are reviewed. Some methods that can be used to evaluate the quality of adhesive interconnections and to evaluate their aging behavior are given. Possible finite element simulation approaches are introduced and the required critical materials properties are summarized. Response to temperature and moisture, resistance to reflow soldering and resistance to rapid change in temperature and humidity are elaborated. The effect of post cure during accelerated testing is discussed. This study shows that only a combined approach using finite element simulations, and use of appropriate experimental evaluation methods can result in revealing, understanding and quantifying the complex degradation mechanisms of adhesive interconnections during aging.

Design of Rework Device using Multi-wave IR-heater (다파장 IR-heater를 이용한 재작업 장치 설계)

  • Cho, Do-Hyeoun
    • 전자공학회논문지 IE
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    • v.47 no.1
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    • pp.6-11
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    • 2010
  • This research is the result for studding about the IR Rework station which is using a multi-wave IR-heater for soldering and de-soldering on the substrate such as PCB. This IR repair and reflow system is increasing the temperature on the target area under stable temperature control following setting point melting point of solder and lead free solder using IR-heater. So this system is not giving any therrna1 damage on the target PCB and components even closed components. The soldering and de-soldering quality is evaluated through the actual test.

Microlens and Arrays Fabrication by the Modified LIGA and Hot Embossing Process (변형 DEEP X-ray 공정과 Hot Embossing 공정을 이용한 마이크로 렌즈 및 어레이의 제작)

  • 이정아;이현섭;이성근;이승섭;권태헌
    • Proceedings of the Korean Society of Precision Engineering Conference
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    • 2003.06a
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    • pp.228-232
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    • 2003
  • Mircolens and microlens arrays are realized using a novel fabrication technology based on the exposure of a resist, usually PMMA, to deep X-rays and subsequent thermal treatment. Hot embossing process is also studied for mass production. The fabrication technology is very simple and produces microlenses and microlens arrays with good surface roughness of several nm. The molecular weight and glass transition temperature of PMMA is reduced when it is irradiated with deep X-rays. The microlenses were produced through the effects of volume change, surface tension. and reflow during thermal treatment of irradiated PMMA. A hot embossing machine is designed and manufactured with a servo motor transfer system. The hot embossing process follows the steps of heating mold to the desired temperature, embossing a mold insert on substrate. cooling mold to the de-embossing temperature. and de-embossing. Microlenses were produced with diameters ranging from 30 to 1500 ${\mu}{\textrm}{m}$. The surface X-ray mask is also fabricated to realize microlens arrays on PMMA sheet with a large area.

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Thermal Compression of Copper-to-Copper Direct Bonding by Copper films Electrodeposited at Low Temperature and High Current Density (저온 및 고전류밀도 조건에서 전기도금된 구리 박막 간의 열-압착 직접 접합)

  • Lee, Chae-Rin;Lee, Jin-Hyeon;Park, Gi-Mun;Yu, Bong-Yeong
    • Proceedings of the Korean Institute of Surface Engineering Conference
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    • 2018.06a
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    • pp.102-102
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    • 2018
  • Electronic industry had required the finer size and the higher performance of the device. Therefore, 3-D die stacking technology such as TSV (through silicon via) and micro-bump had been used. Moreover, by the development of the 3-D die stacking technology, 3-D structure such as chip to chip (c2c) and chip to wafer (c2w) had become practicable. These technologies led to the appearance of HBM (high bandwidth memory). HBM was type of the memory, which is composed of several stacked layers of the memory chips. Each memory chips were connected by TSV and micro-bump. Thus, HBM had lower RC delay and higher performance of data processing than the conventional memory. Moreover, due to the development of the IT industry such as, AI (artificial intelligence), IOT (internet of things), and VR (virtual reality), the lower pitch size and the higher density were required to micro-electronics. Particularly, to obtain the fine pitch, some of the method such as copper pillar, nickel diffusion barrier, and tin-silver or tin-silver-copper based bump had been utillized. TCB (thermal compression bonding) and reflow process (thermal aging) were conventional method to bond between tin-silver or tin-silver-copper caps in the temperature range of 200 to 300 degrees. However, because of tin overflow which caused by higher operating temperature than melting point of Tin ($232^{\circ}C$), there would be the danger of bump bridge failure in fine-pitch bonding. Furthermore, regulating the phase of IMC (intermetallic compound) which was located between nickel diffusion barrier and bump, had a lot of problems. For example, an excess of kirkendall void which provides site of brittle fracture occurs at IMC layer after reflow process. The essential solution to reduce the difficulty of bump bonding process is copper to copper direct bonding below $300^{\circ}C$. In this study, in order to improve the problem of bump bonding process, copper to copper direct bonding was performed below $300^{\circ}C$. The driving force of bonding was the self-annealing properties of electrodeposited Cu with high defect density. The self-annealing property originated in high defect density and non-equilibrium grain boundaries at the triple junction. The electrodeposited Cu at high current density and low bath temperature was fabricated by electroplating on copper deposited silicon wafer. The copper-copper bonding experiments was conducted using thermal pressing machine. The condition of investigation such as thermal parameter and pressure parameter were varied to acquire proper bonded specimens. The bonded interface was characterized by SEM (scanning electron microscope) and OM (optical microscope). The density of grain boundary and defects were examined by TEM (transmission electron microscopy).

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Microlens Fabrication Method by the Modified LICA Process (변형된 LIGA 공정을 이용한 마이크로렌즈 제작방법)

  • Lee, Sung-Keun;Lee, Kwang-Cheol;Lee, Seung-S.
    • Transactions of the Korean Society of Mechanical Engineers A
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    • v.26 no.11
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    • pp.2450-2456
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    • 2002
  • Microlenses and microlens arrays are fabricated using a novel fabrication technology based on the exposure of a resist (usually PMMA) to deep X-rays and subsequent thermal treatment. The fabrication technology is very simple and produces microlenses and microlens arrays with good surface roughness (less than 1 nm). The molecular weight and glass transition temperature of PMMA is reduced when it is irradiated with deep X-rays. The microlenses is produced through the effects of volume change, surface tension, and reflow during thermal treatment of irradiated PMMA. The geometry of the microlens is determined by parameters such as the X-ray dose applied to the PMMA, the diameter of the microlens, along with the heating temperature, heating time, and cooling rate in the thermal treatment. Microlenses are produced with diameters ranging from 30 to 1500 ${\mu}{\textrm}{m}$. The modified LIGA process is used not only to construct hemispherical microlenses but also structures that are rectangular-shaped, star-shaped, etc.

Fracture Toughness of IC Molding Compound Materials(II) (IC 몰딩 콤파운드 재료의 파괴 인성치(II))

  • 김경섭;신영의
    • Journal of the Korean Institute of Electrical and Electronic Material Engineers
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    • v.11 no.5
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    • pp.353-357
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    • 1998
  • Cracking problem of Epoxy Molding Compound(EMC) is critical for the reliability of the plastic package during temperature cycling and IR-reflow condition. Fracture toughness of EMC, which is defined as the resistance of EMC to the crack propagation, is a useful factor in ht estimation of EMC against package crack. Thus, development of EMC having high fracture toughness at a given loading condition would be important for confirming the integrity of package. In this study, toughness of several EMC was measured by varying the test conditions such as temperature, loading speeds, and weight percent of filler in order to quantify the variation of toughness of EMC under various applicable conditions. It was found from the experiments that toughness of all EMC has following trends, i.e., it rapidly decreases over the glass transition temperature, remains almost same or little decreases below $0^{\circ}C$. It decreases with the growth of cross head speed in EMC and the weight percent of filler as the degree of brittleness of EMC increases with the amount of filler content.

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A Study on The Solderability of Micro-BGA of Sn-3.5Ag-0.7Cu (Sn-3.5Ag-0.7Cu Micro-BCA의 Soldering성 연구)

  • ;;;;Kozo Jujimoto
    • Journal of the Microelectronics and Packaging Society
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    • v.7 no.3
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    • pp.55-61
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    • 2000
  • Sn-37Pb and Sn-3.5Ag-0.7Cu solder balls of 0.3 mm diameter were reflow soldered with the variation of soldering peak temperature and conveyer speed of reflow machine. The peak temperatures far soldering were changed in the range of 220~$240^{\circ}C$ for Sn-37Pb and 230~$260^{\circ}C$ for Sn-3.5Ag-0.7Cu. As the results of experiments, optimum soldering condition for Sn-37Pb was $230^{\circ}C$ of soldering temp., 0.7~0.8 m/min of conveyer speed. The optimum condition for the Sn-3.5Ag-0.7Cu was $250^{\circ}C$ and 0.6 m/min. The maximum shear strength for the soldered joints of Sn-37Pb was 555 gf and of Sn-3.5Ag-0.7Cu was 617 gf. Thickness of the intermetallic compound Cu6Sn5 on the soldered interface was 1.13~1.45 $\mu\textrm{m}$ for Sn-37Pb and 2.5~4.3 $\mu\textrm{m}$ for Sn-3.5Ag-0.7Cu.

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Studies on the Interfacial Reaction of Screen-Printed Sn-37Pb, Sn-3.5Ag and Sn-3.8Ag-0.7Cu Solder Bumps on Ni/Au and OSP finished PCB (Ni/Au 및 OSP로 Finish 처리한 PCB 위에 스크린 프린트 방법으로 형성한 Sn-37Pb, Sn-3.5Ag 및 Sn-3.8Ag-0.7Cu 솔더 범프 계면 반응에 관한 연구)

  • Nah, Hae-Woong;Son, Ho-Young;Paik, Kyung-Wook;Kim, Won-Hoe;Hur, Ki-Rok
    • Korean Journal of Materials Research
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    • v.12 no.9
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    • pp.750-760
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    • 2002
  • In this study, three solders, Sn-37Pb, Sn-3.5Ag, and Sn-3.8Ag-0.7Cu were screen printed on both electroless Ni/Au and OSP metal finished micro-via PCBs (Printed Circuit Boards). The interfacial reaction between PCB metal pad finish materials and solder materials, and its effects on the solder bump joint mechanical reliability were investigated. The lead free solders formed a large amount of intermetallic compounds (IMC) than Sn-37Pb on both electroless Ni/Au and OSP (Organic Solderabilty Preservatives) finished PCBs during solder reflows because of the higher Sn content and higher reflow temperature. For OSP finish, scallop-like $Cu_{6}$ /$Sn_{5}$ and planar $Cu_3$Sn intermetallic compounds (IMC) were formed, and fracture occurred 100% within the solder regardless of reflow numbers and solder materials. Bump shear strength of lead free solders showed higher value than that of Sn-37Pb solder, because lead free solders are usually harder than eutectic Sn-37Pb solder. For Ni/Au finish, polygonal shaped $Ni_3$$Sn_4$ IMC and P-rich Ni layer were formed, and a brittle fracture at the Ni-Sn IMC layer or the interface between Ni-Sn intermetallic and P-rich Ni layer was observed after several reflows. Therefore, bump shear strength values of the Ni/Au finish are relatively lower than those of OSP finish. Especially, spalled IMCs at Sn-3.5Ag interface was observed after several reflow times. And, for the Sn-3.8Ag-0.7Cu solder case, the ternary Sn-Ni-Cu IMCs were observed. As a result, it was found that OSP finished PCB was a better choice for solders on PCB in terms of flip chip mechanical reliability.

A Study on Operation Control Technology Required for Introduction of Intelligent Sewage Treatment Plant (스마트 하수처리장 도입에 필요한 운전제어기술에 관한 연구)

  • Lee, Jiwon;Kim, Yuhyeon;Gil, Kyungik
    • Journal of Wetlands Research
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    • v.24 no.1
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    • pp.38-43
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    • 2022
  • Smart sewage treatment plant means creating a safe and clean water environment by establishing an ICT-based real-time monitoring, remote control management and intelligent system for the entire sewage treatment process. The core technology of such a smart sewage treatment plant can be operation control technology using measuring instruments. This research team analyzed and suggested the operation control technologies necessary for the establishment of the intelligent business by referring to the intelligent research projects of the sewage treatment plant in progress in Korea. As a result of the analysis, a total of six removal technologies were presented, including control by scale, reflow water control, linked treated water control, chemical quantity control, winter operation control, and total organic carbon control. By size, standards that can be classified into small and medium-sized large-scale are presented, and in the case of reflow water control, the location of water quality and flow sensors capable of managing reflow water is suggested. In the case of the linked treated water control, the influence and control points of the linked treated water on the sewage treatment plant were presented, and in the case of the chemical injection volume control, a system capable of optimizing the amount of chemical injection according to the introduction of an intelligent sewage treatment plant was presented. In the case of winter operation, the sensors and pumps to be controlled are suggested when considering the decrease in nitrification due to the decrease in water temperature. In the case of total organic carbon control, an interlocking system considering the total amount of pollution in the future was proposed. These operation control scenarios are expected to be used as basic data to be used in intelligent sewage treatment algorithms and scenarios in the future.

Interfacial Reaction and Shear Energy of Sn-52In Solder on Ti/Cu/Au UBM with Variation of Au Thickness and Reflow Temperature (Ti/Cu/Au UBM의 Au 두께와 리플로우 온도에 따른 Sn-52In 솔더와의 계면반응 및 전단 에너지)

  • Choi Jae-Hoon;Jun Sung-Woo;Oh Tae-Sung
    • Journal of the Microelectronics and Packaging Society
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    • v.12 no.1 s.34
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    • pp.87-93
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    • 2005
  • Interfacial reactions between 48Sn-52In solder and $0.1{\mu}m$ Ti/3 ${\mu}m$ Cu/Au under bump metallurgies(UBM) with various Au thickness of $0.1{\~}0.7{\mu}m$ have been investigated after solder reflow at $150^{\circ}C,\;200^{\circ}C$, and $250^{\circ}C$ for 1 minute. Ball shear strength and shear energy of the Sn-52In solder bump on each UBM was also evaluated. With reflowing at $150^{\circ}C$ and $200^{\circ}C$, $Cu_6(Sn,In)_5$ and $AuIn_2$ intermetallic compounds were formed at UBW solder interface. However, UBM was consumed almost completely with reflowing at $250^{\circ}C$. While ball shear strength was not consistent with UBM/solder reactions, ball shear energy matched well with UBM/solder reactions.

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