• 제목/요약/키워드: Reflow temperature

검색결과 104건 처리시간 0.022초

Some Characteristics of Anisotropic Conductive and Non-conductive Adhesive Flip Chip on Flex Interconnections

  • Caers, J.F.J.M.;De Vries, J.W.C.;Zhao, X.J.;Wong, E.H.
    • JSTS:Journal of Semiconductor Technology and Science
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    • 제3권3호
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    • pp.122-131
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    • 2003
  • In this study, some characteristics of conductive and non-conductive adhesive inter-connections are derived, based on data from literature and own projects. Assembly of flip chip on flex is taken as a carrier. Potential failure mechanisms of adhesive interconnections reported in literature are reviewed. Some methods that can be used to evaluate the quality of adhesive interconnections and to evaluate their aging behavior are given. Possible finite element simulation approaches are introduced and the required critical materials properties are summarized. Response to temperature and moisture, resistance to reflow soldering and resistance to rapid change in temperature and humidity are elaborated. The effect of post cure during accelerated testing is discussed. This study shows that only a combined approach using finite element simulations, and use of appropriate experimental evaluation methods can result in revealing, understanding and quantifying the complex degradation mechanisms of adhesive interconnections during aging.

다파장 IR-heater를 이용한 재작업 장치 설계 (Design of Rework Device using Multi-wave IR-heater)

  • 조도현
    • 전자공학회논문지 IE
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    • 제47권1호
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    • pp.6-11
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    • 2010
  • 본 논문은 다파장 IR-heater를 이용하여 전자부품을 솔더령 하거나 또는 회로기판으로부터 분리를 하는 전자회로기판 수리장치에 관한 설계를 다룬다. 이 IR 수리 장치는 IR-heater를 이용하여 납땜의 용융온도 설정에 따라 안정한 온도 제어 아래 목표 영역의 온도를 중가시킨다. 이렇게 설계된 시스템은 PCB와 실장된 소자에 어떠한 열 손상을 주지 않는다. 그 성능융 실험을 통해 평가한다.

변형 DEEP X-ray 공정과 Hot Embossing 공정을 이용한 마이크로 렌즈 및 어레이의 제작 (Microlens and Arrays Fabrication by the Modified LIGA and Hot Embossing Process)

  • 이정아;이현섭;이성근;이승섭;권태헌
    • 한국정밀공학회:학술대회논문집
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    • 한국정밀공학회 2003년도 춘계학술대회 논문집
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    • pp.228-232
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    • 2003
  • Mircolens and microlens arrays are realized using a novel fabrication technology based on the exposure of a resist, usually PMMA, to deep X-rays and subsequent thermal treatment. Hot embossing process is also studied for mass production. The fabrication technology is very simple and produces microlenses and microlens arrays with good surface roughness of several nm. The molecular weight and glass transition temperature of PMMA is reduced when it is irradiated with deep X-rays. The microlenses were produced through the effects of volume change, surface tension. and reflow during thermal treatment of irradiated PMMA. A hot embossing machine is designed and manufactured with a servo motor transfer system. The hot embossing process follows the steps of heating mold to the desired temperature, embossing a mold insert on substrate. cooling mold to the de-embossing temperature. and de-embossing. Microlenses were produced with diameters ranging from 30 to 1500 ${\mu}{\textrm}{m}$. The surface X-ray mask is also fabricated to realize microlens arrays on PMMA sheet with a large area.

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저온 및 고전류밀도 조건에서 전기도금된 구리 박막 간의 열-압착 직접 접합 (Thermal Compression of Copper-to-Copper Direct Bonding by Copper films Electrodeposited at Low Temperature and High Current Density)

  • 이채린;이진현;박기문;유봉영
    • 한국표면공학회:학술대회논문집
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    • 한국표면공학회 2018년도 춘계학술대회 논문집
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    • pp.102-102
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    • 2018
  • Electronic industry had required the finer size and the higher performance of the device. Therefore, 3-D die stacking technology such as TSV (through silicon via) and micro-bump had been used. Moreover, by the development of the 3-D die stacking technology, 3-D structure such as chip to chip (c2c) and chip to wafer (c2w) had become practicable. These technologies led to the appearance of HBM (high bandwidth memory). HBM was type of the memory, which is composed of several stacked layers of the memory chips. Each memory chips were connected by TSV and micro-bump. Thus, HBM had lower RC delay and higher performance of data processing than the conventional memory. Moreover, due to the development of the IT industry such as, AI (artificial intelligence), IOT (internet of things), and VR (virtual reality), the lower pitch size and the higher density were required to micro-electronics. Particularly, to obtain the fine pitch, some of the method such as copper pillar, nickel diffusion barrier, and tin-silver or tin-silver-copper based bump had been utillized. TCB (thermal compression bonding) and reflow process (thermal aging) were conventional method to bond between tin-silver or tin-silver-copper caps in the temperature range of 200 to 300 degrees. However, because of tin overflow which caused by higher operating temperature than melting point of Tin ($232^{\circ}C$), there would be the danger of bump bridge failure in fine-pitch bonding. Furthermore, regulating the phase of IMC (intermetallic compound) which was located between nickel diffusion barrier and bump, had a lot of problems. For example, an excess of kirkendall void which provides site of brittle fracture occurs at IMC layer after reflow process. The essential solution to reduce the difficulty of bump bonding process is copper to copper direct bonding below $300^{\circ}C$. In this study, in order to improve the problem of bump bonding process, copper to copper direct bonding was performed below $300^{\circ}C$. The driving force of bonding was the self-annealing properties of electrodeposited Cu with high defect density. The self-annealing property originated in high defect density and non-equilibrium grain boundaries at the triple junction. The electrodeposited Cu at high current density and low bath temperature was fabricated by electroplating on copper deposited silicon wafer. The copper-copper bonding experiments was conducted using thermal pressing machine. The condition of investigation such as thermal parameter and pressure parameter were varied to acquire proper bonded specimens. The bonded interface was characterized by SEM (scanning electron microscope) and OM (optical microscope). The density of grain boundary and defects were examined by TEM (transmission electron microscopy).

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변형된 LIGA 공정을 이용한 마이크로렌즈 제작방법 (Microlens Fabrication Method by the Modified LICA Process)

  • 이성근;이광철;이승섭
    • 대한기계학회논문집A
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    • 제26권11호
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    • pp.2450-2456
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    • 2002
  • Microlenses and microlens arrays are fabricated using a novel fabrication technology based on the exposure of a resist (usually PMMA) to deep X-rays and subsequent thermal treatment. The fabrication technology is very simple and produces microlenses and microlens arrays with good surface roughness (less than 1 nm). The molecular weight and glass transition temperature of PMMA is reduced when it is irradiated with deep X-rays. The microlenses is produced through the effects of volume change, surface tension, and reflow during thermal treatment of irradiated PMMA. The geometry of the microlens is determined by parameters such as the X-ray dose applied to the PMMA, the diameter of the microlens, along with the heating temperature, heating time, and cooling rate in the thermal treatment. Microlenses are produced with diameters ranging from 30 to 1500 ${\mu}{\textrm}{m}$. The modified LIGA process is used not only to construct hemispherical microlenses but also structures that are rectangular-shaped, star-shaped, etc.

IC 몰딩 콤파운드 재료의 파괴 인성치(II) (Fracture Toughness of IC Molding Compound Materials(II))

  • 김경섭;신영의
    • 한국전기전자재료학회논문지
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    • 제11권5호
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    • pp.353-357
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    • 1998
  • Cracking problem of Epoxy Molding Compound(EMC) is critical for the reliability of the plastic package during temperature cycling and IR-reflow condition. Fracture toughness of EMC, which is defined as the resistance of EMC to the crack propagation, is a useful factor in ht estimation of EMC against package crack. Thus, development of EMC having high fracture toughness at a given loading condition would be important for confirming the integrity of package. In this study, toughness of several EMC was measured by varying the test conditions such as temperature, loading speeds, and weight percent of filler in order to quantify the variation of toughness of EMC under various applicable conditions. It was found from the experiments that toughness of all EMC has following trends, i.e., it rapidly decreases over the glass transition temperature, remains almost same or little decreases below $0^{\circ}C$. It decreases with the growth of cross head speed in EMC and the weight percent of filler as the degree of brittleness of EMC increases with the amount of filler content.

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Sn-3.5Ag-0.7Cu Micro-BCA의 Soldering성 연구 (A Study on The Solderability of Micro-BGA of Sn-3.5Ag-0.7Cu)

  • 신규식;김문일;정재필;신영의
    • 마이크로전자및패키징학회지
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    • 제7권3호
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    • pp.55-61
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    • 2000
  • 직경 0.3 mm의 Sn-37Pb 및 Sn-3.5Ag-0.7Cu 솔더볼을 솔더링 온도와 기판의 이송속도 (conveyer speed)를 변화시켜 가며 리플로 솔더링 하였다. 리플로 솔더링 온도범위는 Sn-37Pb의 경우 220~$240^{\circ}C$, Sn-3.5Ag-0.7Cu의 경우는 230~ $260^{\circ}C$로 하였다. 실험결과, 전단강도 측면에서 최적 솔더링 조건을 Sn-37Pb의 경우 솔더링 온도 및 컨베이어 속도가 각각 $230^{\circ}C$, 0.7~0.8 m/min이고, Sn-3.5Ag-0.7Cu의 경우 각각 $250^{\circ}C$, 0.6 m/min으로 나타났다. 또한 최고 전단강도 값은 Sn-37Pb의 경우는 555 gf 이고 Sn-3.5Ag-0.7Cu의 경우는 617gf이다. 접합계면의 분석결과 Cu6Sn5층의 두께는 Sn-37Pb의 경우는 1.13~1.45 $\mu\textrm{m}$이고 Sn-3.5Ag-0.7Cu의 경우는 2.5~4.3 $\mu\textrm{m}$이다.

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Ni/Au 및 OSP로 Finish 처리한 PCB 위에 스크린 프린트 방법으로 형성한 Sn-37Pb, Sn-3.5Ag 및 Sn-3.8Ag-0.7Cu 솔더 범프 계면 반응에 관한 연구 (Studies on the Interfacial Reaction of Screen-Printed Sn-37Pb, Sn-3.5Ag and Sn-3.8Ag-0.7Cu Solder Bumps on Ni/Au and OSP finished PCB)

  • 나재웅;손호영;백경욱;김원회;허기록
    • 한국재료학회지
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    • 제12권9호
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    • pp.750-760
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    • 2002
  • In this study, three solders, Sn-37Pb, Sn-3.5Ag, and Sn-3.8Ag-0.7Cu were screen printed on both electroless Ni/Au and OSP metal finished micro-via PCBs (Printed Circuit Boards). The interfacial reaction between PCB metal pad finish materials and solder materials, and its effects on the solder bump joint mechanical reliability were investigated. The lead free solders formed a large amount of intermetallic compounds (IMC) than Sn-37Pb on both electroless Ni/Au and OSP (Organic Solderabilty Preservatives) finished PCBs during solder reflows because of the higher Sn content and higher reflow temperature. For OSP finish, scallop-like $Cu_{6}$ /$Sn_{5}$ and planar $Cu_3$Sn intermetallic compounds (IMC) were formed, and fracture occurred 100% within the solder regardless of reflow numbers and solder materials. Bump shear strength of lead free solders showed higher value than that of Sn-37Pb solder, because lead free solders are usually harder than eutectic Sn-37Pb solder. For Ni/Au finish, polygonal shaped $Ni_3$$Sn_4$ IMC and P-rich Ni layer were formed, and a brittle fracture at the Ni-Sn IMC layer or the interface between Ni-Sn intermetallic and P-rich Ni layer was observed after several reflows. Therefore, bump shear strength values of the Ni/Au finish are relatively lower than those of OSP finish. Especially, spalled IMCs at Sn-3.5Ag interface was observed after several reflow times. And, for the Sn-3.8Ag-0.7Cu solder case, the ternary Sn-Ni-Cu IMCs were observed. As a result, it was found that OSP finished PCB was a better choice for solders on PCB in terms of flip chip mechanical reliability.

스마트 하수처리장 도입에 필요한 운전제어기술에 관한 연구 (A Study on Operation Control Technology Required for Introduction of Intelligent Sewage Treatment Plant)

  • 이지원;김유현;길경익
    • 한국습지학회지
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    • 제24권1호
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    • pp.38-43
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    • 2022
  • 스마트(Smart) 하수처리장은 하수처리 전 과정에 대한 ICT 기반의 실시간 모니터링, 원격 제어 관리 및 지능화 체계를 구축하여 안전하고 깨끗한 물환경을 조성하는 것을 의미한다. 이러한 스마트 하수처리장의 핵심이 되는 기술이 계측기를 활용한 운전제어 기술이라 할 수 있다. 본 연구진은 국내에서 진행중인 하수처리장 지능화 연구사업들을 참고하여 지능화사업 구축 시 필요한 운전제어 기술들을 분석하고 제시하였다. 분석 결과 규모별 제어, 반류수 제어, 연계처리수 제어, 약품량 제어, 동절기 운영제어, 총 유기탄소 제어까지 총 6개의 제거 기술에 대해 제시하였다. 규모별로는 소규모와 중규모 대규모로 구분할 수 있는 기준을 제시하였고, 반류수 제어의 경우 반류수를 관리할 수 있는 수질 및 유량 센서의 위치를 제시하였다. 연계처리수 제어의 경우 연계처리수가 하수처리장에 미치는 영향과 제어 지점을 제시하였으며, 약품주입량 제어의 경우 지능형 하수처리장 도입에 따라 약품 주입량을 최적화할 수 있는 시스템을 제시하였다. 동절기 운영의 경우 수온 저하에 따른 질산화 저하를 고려하였을 때 제어해야 하는 센서와 펌프를 제시하였다. 총 유기탄소 제어의 경우 향후 오염총량제를 고려한 연동 시스템을 제시하였다. 이러한 운전제어 시나리오들은 향후 지능형 하수처리 알고리즘과 시나리오에 사용될 기초자료로 활용될 수 있을 것으로 판단된다.

Ti/Cu/Au UBM의 Au 두께와 리플로우 온도에 따른 Sn-52In 솔더와의 계면반응 및 전단 에너지 (Interfacial Reaction and Shear Energy of Sn-52In Solder on Ti/Cu/Au UBM with Variation of Au Thickness and Reflow Temperature)

  • 최재훈;전성우;오태성
    • 마이크로전자및패키징학회지
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    • 제12권1호
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    • pp.87-93
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    • 2005
  • Au 층의 두께를 $0.1{\~}0.7{\mu}m$로 변화시킨 $0.1{\mu}m$ Ti/3 ${\mu}m$ Cu/Au UBM 상에서 48Sn-52In 솔더를 $150-250^{\circ}C$의 온도 범위에서 리플로우시 UBM/솔더 반응에 의한 금속간화합물의 형성거동을 분석하였다. 또한 Ti/Cu/Au UBM의 Au 두께 및 리플로우 온도에 따른 볼 전단강도와 전단에너지를 분석하였다. $150^{\circ}C$$200^{\circ}C$에서 리플로우 시에는 UBM/솔더 계면에 $Cu_6(Sn,In)_5$$AuIn_2$ 금속간 화합물이 형성되어 있으나, $250^{\circ}C$에서 리플로우 시에는 솔더 반응이 크게 증가하여 UBM이 대부분 소모되었다. 볼 전단강도는 UBM/솔더 반응과 일치하지 않는 결과를 나타내었으나, 전단 에너지는 UBM/솔더 반응과 잘 일치하는 변화 거동을 나타내었다.

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