• 제목/요약/키워드: Reflective index

검색결과 94건 처리시간 0.033초

CIGS 박막태양전지를 위한 반사방지특성을 가진 용액공정 투명전극 (Solution-Processed Anti Reflective Transparent Conducting Electrode for Cu(In,Ga)Se2 Thin Film Solar Cells)

  • 박세웅;박태준;이상엽;정중희
    • 한국재료학회지
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    • 제30권3호
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    • pp.131-135
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    • 2020
  • Silver nanowire (AgNW) networks have been adopted as a front electrode in Cu(In,Ga)Se2 (CIGS) thin film solar cells due to their low cost and compatibility with the solution process. When an AgNW network is applied to a CIGS thin film solar cell, reflection loss can increase because the CdS layer, with a relatively high refractive index (n ~ 2.5 at 550 nm), is exposed to air. To resolve the issue, we apply solution-processed ZnO nanorods to the AgNW network as an anti-reflective coating. To obtain high performance of the optical and electrical properties of the ZnO nanorod and AgNW network composite, we optimize the process parameters - the spin coating of AgNWs and the concentration of zinc nitrate and hexamethylene tetramine (HMT - to fabricate ZnO nanorods. We verify that 10 mM of zinc nitrate and HMT show the lowest reflectance and 10% cell efficiency increase when applied to CIGS thin film solar cells.

CR-39 렌즈 착색시간에 따른 굴절률(n) 변화 (The Refractive Index Change for Tinted Time of CR-39 Lens)

  • 김용근
    • 한국안광학회지
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    • 제5권2호
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    • pp.151-155
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    • 2000
  • 칼라 렌즈 제작시 착색 시간에 따른 분광반사율을 측정하여 렌즈표면의 굴절률을 계산하였다. 착색 시간이 길수록 반사율과 굴절률은 커진다. 렌즈 표면에 착색물질이 포화상태가 될 때까지 굴절률은 시간에 따라 증가하였다. 시간에 따른 blue color 렌즈의 굴절률 변화 곡선은 Boltzmann 성장곡선을 따르며, 이때 $n_{min}$은 1.482. $n_{max}$는 1.497. $t_c=11.53$ 그리고 $d_0$ 등의 2.287 등의 parameter 값을 얻었다.

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Sol-Gel법에 의한 $TiO_2-SiO_2$계 저반사 박막의 제조 및 특성 (Preparation and Characterization of Antireflective Film in $TiO_2-SiO_2$ System by Sol-Gel Method)

  • 윤태일;최세영;이용근;이재호
    • 한국세라믹학회지
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    • 제30권9호
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    • pp.775-783
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    • 1993
  • TiO2-SiO2 system anti-reflective(AR) film was prepared to decrease reflectance on the glass surface. The experiments were carried out as fellow, 1) preparation & hydrolysis of TiO2-SiO2 system sols. 2) glass dipping, and 3) drying & heat treatment. We investigated the refractive index and thickness of film with viscosity, zeta-potential of sol, sol concentration, withdrawal speed, drying and heat treatment condition. As a result, we prepared good qualitative Quarter-Half-Quarter type anti-reflective film that had minimum, 0.02% and average reflectance, 0.087% in the visible region.

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An Investigation of the Learning Styles of South Korean Business Students

  • Naik, Bijayananda;Girish, V.G.
    • 아태비즈니스연구
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    • 제3권1호
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    • pp.1-9
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    • 2012
  • The Index of Learning Styles (ILS) instrument based on the Felder-Silverman Learning Style Model was used to determine distribution of learning styles of 125 South Korean business students enrolled in a South Korean institution of higher education. Results show that greater proportion of South Korean business students surveyed in this study prefer sensing over intuitive, visual over verbal, reflective over active, and global over sequential learning styles. The majority of business students have a balanced learning style in all four dimensions of the Felder-Silverman model. Among the students that do not have a balanced learning style, students with sensing, visual, reflective, and global learning styles dominate. Gender difference in learning style preference was not statistically significant for any of the four dimensions.

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Effect of Gas ratio on the anti-reflective properties of SiNx by PECVD

  • 허종규;;조재현;한규민;이준신
    • 한국전기전자재료학회:학술대회논문집
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    • 한국전기전자재료학회 2008년도 하계학술대회 논문집 Vol.9
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    • pp.200-201
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    • 2008
  • 태양전지 제작 시 반사방지막(Anti-reflection Coating)이 태양전지 효율에 미치는 영향을 알아보기 위한 실험으로 최적의 가스비를 알아보기 위하여 Plasma Enhanced Chemical Vapor Deposition(PECVD)를 이용한 Silicon nitride 증착 실험이다. SiH4 가스를 45 sccm으로 고정시킨 상태에서 NH3를 25,45,60,90,135 sccm으로 가변하여 Carrier Lifetime과 Refractive index를 측정하였다. PECVD의 조건은 기판온도 $450^{\circ}C$, Chamber 압력 1 Torr, 증착두께 $1000\AA$으로 고정하였다. 증착 후 500, 600, 700, $800^{\circ}C$로 열처리를 하고나서 Carrier Lifetime을 측정하여 열처리에 대한 효과도 알아보았다.

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Highly Efficient Trans-Reflective Color Filters Incorporating TiO2-MgF2 Multilayer Stacks

  • Shrestha, Vivek Raj;Park, Chul-Soon;Koirala, Ishwor;Lee, Sang-Shin;Choi, Duk-Yong
    • Journal of the Optical Society of Korea
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    • 제19권6호
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    • pp.566-574
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    • 2015
  • We report for the first time highly efficient trans-reflective color filters capable of demonstrating coloration in both transmission and reflection modes by taking advantage of a multilayer stack consisting of MgF2 and TiO2 used respectively as the low and high index materials. In order to enable such trans-reflective performance, securing an optimal stop band assuming an appropriate bandwidth within the visible regime is pivotal, which was realized by tailoring the thicknesses and the numbers of TiO2-MgF2 bi-layers. Three devices were designed through rigorous simulations and developed via e-beam evaporation to demonstrate vivid blue, green, and red colors in the reflection mode, and yellow, magenta, and cyan colors in the transmission mode, featuring an enhanced efficiency exceeding 90% under normal incidence. The color performance of the filters was examined by referring to the chromaticity coordinates of the transmission and reflection spectra, alongside photographed color images. The dependence of the performance on the angle of incidence was explored with respect to incident polarization, indicating that a transmission surpassing 60% could be stably maintained up to an angle of 75°. Polarization independent transfer characteristics were especially achieved for the normal incidence. The proposed devices may be readily extended to other spectral regimes by adjusting the thicknesses of the films.

TCP-CVD법을 활용한 공정변수에 따른 산화막의 제작 (Fabrication of Oxidative Thin Film with Process Conditions by Transformer Coupled Plasma Chemical Vapor Deposition)

  • 김창조;최윤;신백균;박구범;신현용;이붕주
    • 한국진공학회지
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    • 제19권2호
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    • pp.148-154
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    • 2010
  • 본 논문에서는 유기발광다이오드의 보호막 적용을 위하여 TCP-CVD를 이용한 실리콘 산화막 형성에서 산화막의 특성에 영향을 미치는 Power, 가스종류 및 유량, 소스와 기판거리 및 공정온도 등의 공정조건에 따른 증착된 산화막의 특성을 나타내는 증착률, 굴절률을 제어하고자 한다. 그 결과 $SiH_4$ : $O_2$ = 30 : 60 [sccm], 70 [mm]의 source와 기판 거리, Bias를 인가하지 않은 조건에서 80 [$^{\circ}C$] 이하의 공정온도를 보였으며 투과율 90% 이상, 높은 증착률 및 굴절률 1.4~1.5인 안정된 $SiO_2$ 산화박막을 제조할 수 있었다.

Study on the Formation of SiOC Films and the Appropriate Annealing Temperature

  • Oh, Teresa
    • Journal of information and communication convergence engineering
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    • 제9권2호
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    • pp.217-219
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    • 2011
  • As silicon devices shrink and their density increases, the low dielectric constant materials instead of $SiO_2$ film is required. SiOC film as low-k films was deposited by the capacitively coupled plasma chemical vapor deposition and then annealed at $300{\sim}500^{\circ}C$ to find out the properties of the dependence on the temperature and polarity. This study researched the dielectric constant using by the structure of the metal/SiOC film/p-Si, chemical shift, thickness, refractive index and hardness. The trend of reflective index was inverse proportioned the thickness, but the dielectric constant was proportioned it. The dielectric constant decreased with decreasing the thickness and the increment of the refractive index.

Spectroscopic ellipsometer를 이용한 삼원 SiO박막의 증착조건에 따른 유전율 특성 (The dielectric properties of triple SiO thin film using spectroscopic ellipsometer)

  • 김창석;황석영
    • E2M - 전기 전자와 첨단 소재
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    • 제8권2호
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    • pp.129-135
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    • 1995
  • SiO thin films are deposited by evaporator the refractive index of wave length, photon energy and the absorptive rate of these films are measured by spectroscopic ellipsometer. It is derived the absorptive rate and permitivity of SiO thin films from the equations that calculating the refractive index. And the result show good agreement with the calculated values and experimental values. As a result, the wave length of light is increased in the condition that the angle of incidence is fixed on SiO thin film, the basic absorption and the absorption impurities are found in the low wave length (below 450 nm in this study) and the reflective absorption and conductive absorption is increased by the form of exponential function over the low wavelength. The absorptive rate is increased by increased the angle of incidence and thickness of SiO film for the insulating layer. As the thickness of SiO film is increased, the value of complex permitivity is decreasing and as wave length of incidence is increased., the value of dielectric is linearly increasing.

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