• Journal of the Korean Ceramic Society
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• v.49 no.4
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• pp.328-332
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• 2012

Etch rates of Si and high purity SiC have been compared for various fluorocarbon plasmas. The relative plasma resistance of SiC, which is defined as the etch rate ratio of Si to SiC, varied between 1.4 and 4.1, showing generally higher plasma resistance of SiC. High resolution X-ray photoelectron analysis revealed that etched SiC has a surface carbon content higher than that of etched Si, resulting in a thicker fluorocarbon polymer layer on the SiC surface. The plasma resistance of SiC was correlated with this thick fluorocarbon polymer layer, which reduced the reaction probability of fluorine-containing species in the plasma with silicon from the SiC substrate. The remnant carbon after the removal of Si as volatile etch products augments the surface carbon, and seems to be the origin of the higher plasma resistance of SiC.

• Journal of Welding and Joining
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• v.13 no.2
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• pp.132-138
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• 1995

Rene80 superalloy was liquid phase diffusion bonded by using boron(B) as an insert material, where B has high diffusivity and higher melting point as an insert material. Bonding procedure and bonding mechanism of Rene80/B/Rene80 joint were investigated. As results, liquid metal was produced by solid state reaction between base metal and insert material on bonding zone. The liquid metal was produced preferentially at the grain boundary. Except for production of liquid metal, other bonding procedure was nearly same as TLP(Transient Liquid Phase) bonding. Bonding time, however, was reduced compared to prior result of TLP bonding. By bonding S.4ks at l453K, Ren80/B/Rene80 joint was isothermally solidified and homogenized where thickness of insert material was 7.5.mu.m.

• Mass Spectrometry Letters
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• v.8 no.1
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• pp.1-7
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• 2017

Studies performed on heterogeneous reactions of hydroxyl radicals (OH) in aerosol materials of tropospheric interest are presented, focusing on the chemical ionization mass spectrometric approach. Kinetic investigations of these reactions reduced deviation in the estimation of OH concentration in the troposphere by atmospheric modeling from field measurements. Recently, OH uptake was investigated under wet conditions to acquire kinetic information under more realistic conditions representative of the troposphere. The information on the mechanism and kinetics of OH uptake by tropospheric aerosol materials will contribute to the updating of atmospheric models, allowing a better understanding of the troposphere.

• Journal of the Korean Society of Combustion
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• v.8 no.1
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• pp.17-24
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• 2003

The conventional regenerative system has a high thermal efficiency as well as energy saving using the high preheated combustion air. in spite of these advantages, it can not avoid high nitric oxide emissions. Recently, flameless combustion has received much attention to solve these problems. In this research, numerical analysis is performed for flow-combustion phenomena in the self regenerative burner. In this analysis we used Fluent 6.0 code. the that is developed for commercial use, Methane gas is used as a fuel and two-step reaction model for methane and Zeldovich mechanism for NO generation are used. the velocity of the preheated combustion air is used as a parameter and we analyze the characteristics of flow-field, temperature distributions and NO emissions. Due to the increased recirculation rate, the maximum temperature of flame is significantly increased and NOx emissions is reduced.

• 한국연소학회:학술대회논문집
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• 2002.11a
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• pp.97-104
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• 2002

The conventional regenerative system has a high thermal efficiency as well as energy saving using the high preheated combustion air. in spite of these advantages, it can not avoid high nitric oxide emissions. Recently, flameless combustion has received much attention to solve these problems. In this research, numerical analysis is performed for flow-combustion phenomena in the self regenerative burner. In this analysis we used Fluent 6.0 code. the that is developed for commercial use, Methane gas is used as a fuel and two-step reaction model for methane and Zeldovich mechanism for NO generation are used. the velocity of the preheated combustion air is used as a parameter and we analyze the characteristics of flow-field, temperature distributions and NO emissions. Due to the increased recirculation rate, the maximum temperature of flame is significantly increased and NOx emissions is reduced

• Journal of the Korean institute of surface engineering
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• v.32 no.2
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• pp.83-92
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• 1999

GaN etching was performed using planar inductively coupled $Cl_2$-based plasmas and the effects of main process parameters on the characteristics of the plasmas and their relations to GaN etch rates were studied. Also, the GaN etch mechanism was investigated using a Langmuir probe and optical emission spectroscopy (OES) during the etching, and X-ray photoelectron spectroscopy (XPS) of the etched surfaces. The GaN etch rates increased with the increase of chlorine radical density and ion energy, and a vertical etch profile haying the etch rate close to 4000 $\AA$/min could be obtained. The addition of 10% Ar to $Cl_2$ gas increased the GaN etch rate and the addition of Ar (more than 20%) and HBr generally reduced the GaN etch rate. The GaN etch rate appeared to be more affected by the chemical reaction between Cl radicals and GaN compared to the physical sputtering itself under the sufficient ion bombardments to break GaN bonds.

• Journal of the Korean Ceramic Society
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• v.26 no.4
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• pp.514-520
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• 1989

The early hydration characteristics according to the C3S/C3A ratio and presence of gypsum, in order to establish the hydration mechanism of the system C3S-C3A, have been studied. The rate of C3S dissolution in the system C3S-Gypsum was higher than that in the system C3S. Consequently, the induction period was reduced and the rate of Ca(OH)2 formation in the accleration period was increased. The hydration of C3S in the system C3S-C3A was retarded because Al3+ in the liquid phase originating from the hydration of C3A was incorporated into calcium hydrosilicates formed. The retardation phenomenon of C3S hydration was not appeared in the system C3S-C3A-gypsum because the reaction of monosulfate formation became the rate-determining step.

• The Korean Journal of Physiology and Pharmacology
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• v.7 no.1
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• pp.33-37
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• 2003

Oxidative damage to mitochondria is a critical mechanism in necrotic or apoptotic cell death induced by many kinds of toxic chemicals. Thioredoxin (Trx) family proteins are known to play protective roles in organisms under oxidative stress through redox reaction by using reducing equivalents of cysteines at a conserved active site, Cys-X-X-Cys. Whereas biological and physiological properties of Trx1 are well characterized, significance of mitochondrial thioredoxin (Trx2) is not well known. Therefore, we addressed physiological role of Trx2 in PC12 cells under oxidative stress. In PC12 cells, transiently overexpressed Trx2 significantly reduced cell death induced by hydrogen peroxide, whereas mutant Trx2, having serine residues instead of two cysteine residues at the active site did not. In addition, stably expressed Trx2 protected PC12 cells from serum deprivation. These results suggest that Trx2 may play defensive roles in PC12 cells by reducing oxidative stress to mitochondria.

• Journal of Ceramic Processing Research
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• v.19 no.5
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• pp.369-371
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• 2018

The uniform and monodisperse bismuth nanospheres were successfully prepared by simple and convenient solvothermal method. The bismuth nitrate was reduced by ethylene glycol at $150-200^{\circ}C$ for 20-30 hrs. The nanospheres were characterized by powder X-ray diffraction, scanning electron microscopy and transmission electron microscopy. The dispersivity of bismuth nanospheres was investigated using optical microscope. The optimum reaction conditions to prepare the uniform bismuth nanospheres with a narrow diameter range was investigated. The results indicate that the monodisperse bismuth nanospheres prepared at $200^{\circ}C$ possess sizes ranging from 100-200 nm. The formation mechanism of the bismuth nanospheres was hypothesized.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2008.06a
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• pp.477-477
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• 2008

For more than three decades, the gate dielectrics in CMOS devices are $SiO_2$ because of its blocking properties of current in insulated gate FET channels. As the dimensions of feature size have been scaled down (width and the thickness is reduced down to 50 urn and 2 urn or less), gate leakage current is increased and reliability of $SiO_2$ is reduced. Many metal oxides such as $TiO_2$, $Ta_2O_4$, $SrTiO_3$, $Al_2O_3$, $HfO_2$ and $ZrO_2$ have been challenged for memory devices. These materials posses relatively high dielectric constant, but $HfO_2$ and $Al_2O_3$ did not provide sufficient advantages over $SiO_2$ or $Si_3N_4$ because of reaction with Si substrate. Recently, $HfO_2$ have been attracted attention because Hf forms the most stable oxide with the highest heat of formation. In addition, Hf can reduce the native oxide layer by creating $HfO_2$. However, new gate oxide candidates must satisfy a standard CMOS process. In order to fabricate high density memories with small feature size, the plasma etch process should be developed by well understanding and optimizing plasma behaviors. Therefore, it is necessary that the etch behavior of $HfO_2$ and plasma parameters are systematically investigated as functions of process parameters including gas mixing ratio, rf power, pressure and temperature to determine the mechanism of plasma induced damage. However, there is few studies on the the etch mechanism and the surface reactions in $BCl_3$ based plasma to etch $HfO_2$ thin films. In this work, the samples of $HfO_2$ were prepared on Si wafer with using atomic layer deposition. In our previous work, the maximum etch rate of $BCl_3$/Ar were obtained 20% $BCl_3$/ 80% Ar. Over 20% $BCl_3$ addition, the etch rate of $HfO_2$ decreased. The etching rate of $HfO_2$ and selectivity of $HfO_2$ to Si were investigated with using in inductively coupled plasma etching system (ICP) and $BCl_3/Cl_2$/Ar plasma. The change of volume densities of radical and atoms were monitored with using optical emission spectroscopy analysis (OES). The variations of components of etched surfaces for $HfO_2$ was investigated with using x-ray photo electron spectroscopy (XPS). In order to investigate the accumulation of etch by products during etch process, the exposed surface of $HfO_2$ in $BCl_3/Cl_2$/Ar plasma was compared with surface of as-doped $HfO_2$ and all the surfaces of samples were examined with field emission scanning electron microscopy and atomic force microscope (AFM).