• Title/Summary/Keyword: Red-shifted band

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Comparative study of photoluminescences for Zn-polar and O-polar faces of single-crystalline ZnO bulks

  • O, Dong-Cheol;Kim, Dong-Jin;Bae, Chang-Hwan;Gu, Gyeong-Wan;Park, Seung-Hwan
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2010.06a
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    • pp.39-39
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    • 2010
  • The authors have an extensive study of photoluminescences for Zn-polar and O-polar faces of single-crystalline ZnO bulks. In the photoluminescence (PL) spectra at 10 K, Zn-polar and O-polar faces show a common emission feature: neutral donor-bound excitons and their longitudinal-optical (LO) phonon replicas are strong, and free excitons are very weak. However, in the PL spectra at room temperature (RT), Zn-polar and O-polar faces show extremely different emission characteristics: the emission intensity of Zn-polar face is 30 times larger than that of O-polar face, and the band edge of Zn-polar face is 33 meV red-shifted from that of O-polar face. The temperature dependence of photoluminescence indicates that the PL spectra at RT are closely associated with free excitons and their phonon-assisted annihilation processes. As a result, it is found that the RT PL spectra of Zn-polar face is dominated by the first-order LO phonon replica of A free excitons, while that of O-polar face is determined by A free excitons. This is ascribed that Zn-polar face has larger exciton-phonon coupling strength than O-polar face.

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Preparation and Characteristics of Visible-Light-Active $TiO_2-_xN_x$ Nanoparticles for Photocatalytic Activities (가시광 활성을 갖는 광촉매용 $TiO_2-_xN_x$ 나노입자의 제조 및 특성)

  • Yun, Tae-Kwan;Bae, Jae-Young
    • Journal of Korean Society of Environmental Engineers
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    • v.31 no.11
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    • pp.1019-1024
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    • 2009
  • Visible-light-active $TiO_2-_xN_x$ nanoparticles with a homogeneous anatase crystalline structure were successfully prepared through a hydrolysis of $TiCl_4$ with ammonia solution. The samples were characterized by X-ray diffraction (XRD), Transmission electron microscopy (TEM), $N_2$-sorption, and UV-vis diffuse reflectance spectra (DRS) techniques. The light absorption onset shifted from 390 nm on pure $TiO_2$ to the visible region at 530 nm on nitrogen-doped $TiO_2$. A clear decrease in the band gap was deduced from the DRS results. The photocatalytic activity was evaluated from the photodegradation of congo red solution under visible light irradiation. The photocatalyst showed the highest photocatalytic activity at an optimal value of nitrogen doping concentration. This was suggested that the nitrogen doping should have an important effects on the improvement of photocatalytic activity.

Effects of Precursor Concentration on Surface and Optical Properties of ZnO Nano-Fibrous Thin Films Fabricated by Spin-Coating Method (스핀코팅 방법으로 제작된 ZnO 나노 섬유질 박막의 전구체 농도에 따른 표면 및 광학적 특성)

  • Kim, Min-Su;Kim, Ghun-Sik;Yim, Kwang-Gug;Cho, Min-Young;Jeon, Su-Min;Choi, Hyun-Young;Lee, Dong-Yul;Kim, Jin-Soo;Kim, Jong-Su;Lee, Joo-In;Leem, Jae-Young
    • Journal of the Korean Vacuum Society
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    • v.19 no.6
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    • pp.483-488
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    • 2010
  • ZnO nano-fibrous thin films with various precursor concentrations ranging from 0.2 to 1.0 mol (M) were grown by spin-coating method and effects of the precursor concentration on surface and optical properties of the ZnO nano-ribrous thin films were investigated by using scanning electron microscopy (SEM) and photoluminescence (PL). ZnO nuclei were formed at the precursor concentration below 0.4 M and the ZnO nano-fibrous thin films were grown at the precursor concentration above 0.6 M. Further increase in the precursor concentration, the thickness of the ZnO nano-fibrous thin films is gradually increased. The intensity and the full-width at half-maximum (FWHM) of the near-band-edge emission (NBE) is increased as the precursor concentration is increased. The deep-level emission (DLE) is red-shifted as the precursor concentration is increased.

Change in Opto-electrical Characteristics in Poly[3-octylthiophene-co-3-(4-fluorophenyl)thiophene] according to the Copolymerization Ratio (Poly[3-octylthiophene-co-3-(4-fluorophenyl)thiophene]에서 공중합 비율에 따른 전기 광학적 특성의 변화)

  • 신선호;정애영;김주현;이후성;김동표
    • Polymer(Korea)
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    • v.25 no.3
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    • pp.399-405
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    • 2001
  • Poly[3-octylthiophene-co-3-(4-fluorophenyl)thiophene]s were synthesized in 2:1, 1:1, and 1:2 mole ratios, and organic electroluminescent devices were fabricated using the copolymers. The opto-electrical properties of the copolymers were studied by PL, EL spectra, I-V, and V-L curves of the organic electroluminescent devices in conjunction with the energy band diagrams which were obtained from the cyclic voltammogram and the electronic absorption spectra. The LUMO energy level of P(OT/FPT)(1:1) is the lowest as -3.35 eV. In the copolymers P(OT/FPT)(2:1) and P(OT/FPT)(1:1) the ${\lambada}_{max}$ in the PL and EL spectra red-shifted as the mole ratio of fluorophenyl group increased while in P(OT/FPT)(1:2) it showed a blue-shift. This indicates that the backbone chain is twisted due to the steric hinderance of the fluorophenyl group leading to shorter ${\pi}$-conjugation length. P(OT/FPT)(1:1) showed the highest EL intensity and the highest power efficiency among the three copolymers. In P(OT/FPT)(1:2) the roughness of the film surface causes unusually high local leakage current leading to the low efficiency of electroluminescence.

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The Study for Synthesis and Characteristic of ${\alpha},{\beta}$-tetra(phenoxy, 2-naphthoxy, 4-tritylphenoxy) Oxovanadium Phthalocyanine Derivatives (${\alpha},{\beta}$-tetra(phenoxy, 2-naphthoxy, 4-tritylphenoxy) Oxovanadium 프탈로시아닌 유도체의 합성 및 특성에 관한 연구)

  • Son, Dae-Hee;Heo, Jin;Kim, Song-Hyuk;Lee, Seung-Ho;Lee, Gun-Dae;Hong, Seong-Soo;Park, Seong-Soo
    • Applied Chemistry for Engineering
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    • v.21 no.6
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    • pp.638-642
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    • 2010
  • After phthalonitrile derivatives were synthesized by the introduction of phenoxy, 2-naphthoxy or 4-trityl phenoxy group on ${\alpha}$- and ${\beta}$-position, oxovanadyl phthalocyanine (VOPc) derivatives containing electron-rich substituent group at different position were synthesized successfully in this investigation. The chemical structure of samples was determined by the means of $^1H$-NMR, MALDI-TOF mass spectroscopy, and FT-IR spectrometer. Also, optical and chemical properties were determined by the means of UV-Vis spectrometer, X-ray diffractometry, and thermo gravimetry. It was found that the maximum absorbing wavelength of VOPc derivatives ranged from 684 to 726 nm. Also, their solubility and Q-band were enhanced and shifted by the introduction of substitute group, respectively.

Heteroleptic Phosphorescent Iridium(III) Compound with Blue Emission for Potential Application to Organic Light-Emitting Diodes

  • Oh, Sihyun;Jung, Narae;Lee, Jongwon;Kim, Jinho;Park, Ki-Min;Kang, Youngjin
    • Bulletin of the Korean Chemical Society
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    • v.35 no.12
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    • pp.3590-3594
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    • 2014
  • Blue phosphorescent $(dfpypy)_2Ir(mppy)$, where dfpypy = 2',6'-difluoro-2,3'-bipyridine and mppy = 5-methyl-2-phenylpyridine, has been synthesized by newly developed effective method and its solid state structure and photoluminescent properties are investigated. The glass-transition and decomposition temperature of the compound appear at $160^{\circ}C$ and $360^{\circ}C$, respectively. In a crystal packing structure, there are two kinds of intermolecular interactions such as hydrogen bonding ($C-H{\cdots}F$) and edge-to-face $C-H{\cdots}{\pi}(py)$ interaction. This compound emits bright blue phosphorescence with ${\lambda}_{max}=472nm$ and quantum efficiencies of 0.23 and 0.32 in fluid and the solid state. The emission band of the compound is red-shifted by 40 nm relative to homoleptic congener, $Ir(dfpypy)_3$. The ancillary ligand in $(dfpypy)_2Ir(mppy)$ has been found to significantly destabilize HOMO energy, compared to $Ir(dfpypy)_3$, $(dfpypy)_2Ir(acac)$ and $(dfpypy)_2Ir(dpm)$, without significantly changing LUMO energy.

Characteristics of $In_xGa_{1-x}N/GaN$ single quantum well grown by MBE

  • Kang, T.W.;Kim, C.O.;Chung, G.S;Eom, K.S.;Kim, H.J.;Won, S.H.;Park, S.H.;Yoon, G.S.;Lee, C. M.;Park, C.S.;Chi, C.S.;Lee, H.Y.;Yoon, J.S.
    • Journal of the Korean Vacuum Society
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    • v.7 no.s1
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    • pp.15-19
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    • 1998
  • Structural and optical properties of $In_xGa_{1-X}N$ as well as $In_{0.1}Ga_{0.9}N$/GaN single quantum we11 (SQW) grown on sapphire (0001) substrate with an based GaN using rf-plasma assisted MBE have been investigated. The quality of the InXGal.,N fdm was improved as the growth temperature increased. In PL measurements at low temperatures, the band edge emission peaks of $In_xGa_{1-X}N$ was shifted to red region as an indium cell and substrate temperature increased. For $In_{0.1}Ga_{0.9}N$/GaN SQW, the optical emission energy has blue shift about 15meV in PL peak, due to the confined energy level in the well region. And, the FWHM of the $In_{0.1}Ga_{0.9}N$/GaN SQW was larger than that of the bulk Ino,la.9N films. The broadening of FWHM can be explained either as non-uniformity of Indium composition or the potential fluctuation in the well region. Photoconductivity (PC) decay measurement reveals that the optical transition lifetimes of the SQW measured gradually increased with temperatures.

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Preparation and Characterization of Silver Nanoparticles Embedded in Silica Sol Particles

  • Kang, Byung-Kyu;Son, Dong-Min;Kim, You-Hyuk
    • Bulletin of the Korean Chemical Society
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    • v.32 no.10
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    • pp.3707-3711
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    • 2011
  • Silver nanoparticles coated with silica can be obtained by the reduction of $AgNO_3$ with hydrazine in the presence of NaOH-stabilized, active silicic acid (polysilicic acid). The size of the silver nanoparticles and the silica shell thicknesses were affected by varying the hydrazine content, the active silicic acid content and the experimental method (e.g. hydrothermal method). Typically, silver nanoparticles sized around 40 nm were aggregated, connected by silica. The presence of peaks centered around 400 nm in UV-vis spectra corresponds to the surface plasmon resonance of silver nanoparticles. The size of the aggregated silver nanoparticles increased with increasing hydrazine concentration. Under hydrothermal conditions at $150^{\circ}C$ the formation of individual silica particles was observed and the sizes of the silver nanoparticles were reduced. The hydrothermal treatment of silver nanoparticles at $180^{\circ}C$ gives a well-defined Ag@$SiO_2$ core-shell in aggregated silica sol particles. The absorption band observed at around 412 nm were red-shifted with respect to the uncoated silver nanoparticles (${\lambda}_{max}$ = 399 nm) due to the larger refractive index of silica compared to that of water. The formation of silver nanoparticles coated with silica is confirmed by UV-visible absorption spectra, transmission electron microscopy (TEM) and energy-dispersive spectroscopy (EDS) data.

Silver Colloidal Effects on Excited-State Structure and Intramolecular Charge Transfer of p-N,N-dimethylaminobenzoic Acid Aqueous Cyclodextrin Solutions

  • Choe, Jeong Gwan;Kim, Yang Hui;Yun, Min Jung;Lee, Seung Jun;Kim, Gwan;Jeong, Sae Chae
    • Bulletin of the Korean Chemical Society
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    • v.22 no.2
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    • pp.219-227
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    • 2001
  • The silver colloidal effects on the excited-state structure and intramolecular charge transfer (ICT) of p-N,N-dimethylaminobenzoic acid (DMABA) in aqueous cyclodextrin (CD) solutions have been investigated by UV-VIS absorption, steady-state and time-resolved fluorescence, and transient Raman spectroscopy. As the concentration of silver colloids increases, the ratio of the ICT emission to the normal emission (Ia /Ib) of DMABA in the aqueous $\alpha-CD$ solutions are greatly decreased while the Ia /Ib values in the aqueous B-CD solutions are significantly enhanced. It is also noteworthy that the ICT emission maxima are red-shifted by 15-40 nm upon addition of silver colloids, implying that DMABA encapsulated in $\alpha-CD$ or B-CD cavity is exposed to more polar environment. The transient resonance Raman spectra of DMABA in silver colloidal solutions demonstrate that DMABA in the excited-state is desorbed from silver colloidal surfaces as demonstrated by the disappearance of νs (CO2-)(1380 cm-1 ) with appearance of ν(C-OH)(1280 cm -1) band, respectively. Thus, in the aqueous B-CD solutions the carboxylic acid group of DMABA in the excited-state can be readily hydrogen-bonded with the secondary hydroxyl group of B-CD while in aqueous and $\alpha-CD$ solutions the carboxylic acid group of DMABA has the hydrogen-bonding interaction with water. Consequently, in the aqueous B-CD solutions the enhancement of the Ia /Ia value arises from the intermolecular hydrogen-bonding interaction between DMABA and the secondary hydroxyl group of B-CD as well as the lower polarity of the rim of the B-CD cavity compared to bulk water. This is also supported by the increase of the association constant for DMABA/ B-CD complex in the presence of silver colloids.

Defect-related yellowish emission of un doped ZnO/p-GaN:Mg heterojunction light emitting diode

  • Han, W.S.;Kim, Y.Y.;Ahn, C.H.;Cho, H.K.;Kim, H.S.;Lee, J.H.
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2009.06a
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    • pp.327-327
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    • 2009
  • ZnO with a large band gap (~3.37 eV) and exciton binding energy (~60 meV), is suitable for optoelectronic applications such as ultraviolet (UV) light emitting diodes (LEDs) and detectors. However, the ZnO-based p-n homojunction is not readily available because it is difficult to fabricate reproducible p-type ZnO with high hall concentration and mobility. In order to solve this problem, there have been numerous attempts to develop p-n heterojunction LEDs with ZnO as the n-type layer. The n-ZnO/p-GaN heterostructure is a good candidate for ZnO-based heterojunction LEDs because of their similar physical properties and the reproducible availability of p-type GaN. Especially, the reduced lattice mismatch (~1.8 %) and similar crystal structure result in the advantage of acquiring high performance LED devices. In particular, a number of ZnO films show UV band-edge emission with visible deep-level emission, which is originated from point defects such as oxygen vacancy, oxygen interstitial, zinc interstitial[1]. Thus, defect-related peak positions can be controlled by variation of growth or annealing conditions. In this work, the undoped ZnO film was grown on the p-GaN:Mg film using RF magnetron sputtering method. The undoped ZnO/p-GaN:Mg heterojunctions were annealed in a horizontal tube furnace. The annealing process was performed at $800^{\circ}C$ during 30 to 90 min in air ambient to observe the variation of the defect states in the ZnO film. Photoluminescence measurements were performed in order to confirm the deep-level position of the ZnO film. As a result, the deep-level emission showed orange-red color in the as-deposited film, while the defect-related peak positions of annealed films were shifted to greenish side as increasing annealing time. Furthermore, the electrical resistivity of the ZnO film was decreased after annealing process. The I-V characteristic of the LEDs showed nonlinear and rectifying behavior. The room-temperature electroluminescence (EL) was observed under forward bias. The EL showed a weak white and strong yellowish emission colors (~575 nm) in the undoped ZnO/p-GaN:Mg heterojunctions before and after annealing process, respectively.

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