• 한국정보디스플레이학회:학술대회논문집
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• 2006.08a
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• pp.1090-1092
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• 2006

There is provided white light illumination system including a radiation source, a first luminescent material having a peak emission wavelength of about 575 to about 620 nm, a second luminescent material having a peak emission wavelength of about 495 to about 550 nm, which is different from the first luminescent material and a third luminescent material having a peak emission wavelength of about 420 to about 480 nm, which is different from the first and second luminescent materials. The LED may be a UV LED and the luminescent materials may be a blend of three phosphors. A human observer perceives the combination of the blue, green and red phosphor emissions as white light.

• Electrical & Electronic Materials
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• v.8 no.6
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• pp.752-758
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• 1995

Red emitting CaS:Eu,S electroluminescent(EL) device prepared at 550.deg. C by an electron-beam evaporation technique, demonstrated luminance of 175cd/m$\^$2/ and efficiency of 0.311m/W with 3kHz drive. Luminance was increased with the increase of applied voltage and frequency. From the results of the PL spectrum and the EL spectrum, the CaS:Eu, S device showed emission peak near 640nm resulted from the transition of EU$\^$2+/ 4f$\^$6/5d.rarw.4f$\^$7/. The capacitance of the phosphor layer from the Sawyer-Tower circuit was 10.5nF/cm$\^$2/.

• Journal of the Korean institute of surface engineering
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• v.32 no.6
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• pp.665-670
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• 1999

PDP용 적색형광체는 penning가스(Ne 및 5% Xe혼합가스)에 의해 방출되는 147nm파장에서 쉽게 여기되어 논은 양자효율을 주는 물질로 이루어지는데 본 실험은 발광효율을 높이기 위하여 $Y_2$$O_3$:Eu, $(Y,Gd)_2$$O_3$:Eu 및 $(Y,Cd)BO_3$:Eu를 공침법으로 합성하여 부활제인 $Bu^{3+}$ /의 농도, Flux첨가에 따른 미시조직의 변화등을 여기 방출 스펙트럼을 통해 발광효율을 조사하여 다음과 같은 결론을 얻었다. $Y_2$$O_3$:Eu 형광체 합성시 최적조정은 $Y_2$$O_3$에 대한 $Eu_2$$O_3$의 몰비는 5:1, $BaCO_3$ 첨가시 몰비는 15:1로 나타났으며 2차 소성시 $1200^{\circ}C$이상에서 1~3$\mu\textrm{m}$의 구형입상이 형성되었으며 입자의 크기, 형상은 발광특성에 영향을 미쳤다. 또 $Eu^{ 3+}$ 농도는 7wt%가 최적조건으로 나타났다.

• Current Applied Physics
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• v.18 no.11
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• pp.1359-1367
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• 2018

In this work, we investigated the spectroscopic properties of $LiY_xSr_yZrO_{3+{\alpha}:Eu^{3+}$, a red emitting nanophosphor based on $SrZrO_3$ perovskite. The synthesis process was an auto-combustion process. X-ray diffractograms show the orthorhombic structure of $SrZrO_3$. Photoluminescence (PL) excitation spectra display a split charge transfer band revealing the presence of two possible sites for the $Eu^{3+}$ ions. The emission spectra at 231 nm excitation illustrate the dominance of the $^5D_0-^7F_1$ transition, which is an indication that the smaller sized $Eu^{3+}$ ions are mostly situated at the more ordered (symmetric) $Sr^{2+}$ sites. The emission spectra at 292 nm & 397 nm excitations show the dominance of $^5D_0-^7F_2$ transition which suggests some of the $Eu^{3+}$ ions are also situated at the distorted $Zr^{4+}$ sites. Both the intensity parameters, asymmetry ratio and the decay lifetimes of the nanophosphors show dependence on $Y^{3+}$ concentration, signifying a modification in the host structure. Maximum quantum efficiency value of ${\approx}46%$ was obtained for the nanophosphors which indicate the need for improvement for practical applications. CIE coordinates show the suitability of this phosphor for both red emission in LED and as a complementary colour for white LED applications.

• Korean Journal of Materials Research
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• v.10 no.3
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• pp.204-211
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• 2000

The $(Y,Gd)BO_3:Eu$ red phosphors for PDP application were synthesized by ultrasonic spray method and then their photoluminance properties were investigated under 147nm VUV irradiation. The precursor solution of acetates of Y, GD and Eu and boric acid diluted in water was sprayed using 1.7 MHz ultra-sonic sprayer into the reaction tube held at high temperature. The as-sprayed particles were amorphous phase having C-C and C-H bonds due to the insufficient thermal reaction during the pass along the tube. But the sprayed samples followed by heat treatment at $1100^{\circ}C$ had the same crystal structure and chemical composition as those samples followed by solid state reaction. It was found that the $(Y_{0.7}Gd_{0.3})_{0.95} BO_3:Eu_{0.05}^{3+}$ phosphor particles synthesized by spray at $500^{\circ}C$ and then heat treated at $900^{\circ}C$ had a spherical-like shape and fine particle size at $0.7{\mu\textrm{m}}$ having a narrow size distribution, while the phosphor particles made by solid state reaction was $3{\mu\textrm{m}}$ coarse and non-uniform size distribution. The emitting intensity under 147nm VUV excitation for $(Y_{0.7}Gd_{0.3})_{0.95}BO_3:Eu_{0.05}^{3+}$ phosphor prepared by spray method was found to be higher than those phosphor made by solid state reaction and the commercial $(Y,Gd)BO_3:Eu$ product.

• Korean Journal of Materials Research
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• v.23 no.1
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• pp.31-34
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• 2013

Trivalent cerium-ion-doped $Y_3(Al,\;Ga)_5O_{12}$ nanoparticle phosphor nanoparticles were synthesized using the reverse micelle process. The Ce doped $Y_3(Al,\;Ga)_5O_{12}$ particles were obtained from nitrate solutions dispersed in the nanosized aqueous domains of a micro emulsion consisting of cyclohexane as the oil phase and poly(oxyethylene) nonylphenyl ether (Igepal CO-520) as the non-ionic surfactant. The crystallinity, morphology, and thermal properties of the synthesized $Y_3(Al,\;Ga)_5O_{12}:Ce^{3+}$ powders were characterized by thermogravimetry-differential thermal analysis (TGA-DTA), X-ray diffraction analysis (XRD), scanning electron microscopy (SEM), and transmission electron microscopy. The crystallinity, morphology, and chemical states of the ions were characterized; the photo-physical properties were studied by taking absorption, excitation, and emission spectra for various concentrations of cerium. The photo physical properties of the synthesized $Y_3(Al,\;Ga)_5O_{12}:Ce^{3+}$ powders were studied by taking the excitation and emission spectra for various concentrations of cerium. The average particle size of the synthesized YAG powders was below $1{\mu}m$. Excitation spectra of the $Y_3Al_5O_{12}$ and $Y_3Al_{3.97}Ga_{1.03}O_{12}$ samples were 485 nm and 475 nm, respectively. The emission spectra of the $Y_3Al_5O_{12}$ and $Y_3Al_{3.97}Ga_{1.03}O_{12}$ were around 560 nm and 545 nm, respectively. $Y_3(Al,\;Ga)_5O_{12}:Ce^{3+}$ is a red-emitting phosphor; it has a high efficiency for operation under near UV excitation, and may be a promising candidate for photonic applications.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.37 no.3
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• pp.274-279
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• 2024

Eu³⁺-doped BaZrO₃ (BaZrO₃:Eu³⁺) phosphor powders were prepared using a solid-state reaction by changing the molar concentration of Eu³⁺ within the range of 0.5 to 30 mol%. Irrespective of the molar concentration of Eu³⁺ ions, the crystal structures of all the phosphors were cubic. The excitation spectra of BaZrO₃:Eu³⁺ phosphors consisted of an intense broad band centered at 277 nm in the range of 230~320 nm. The emission spectra were composed of a dominant orange band at 595 nm arising from the ⁵D₀→⁷F₁ magnetic dipole transition of Eu³⁺ and two weak emission bands centered at 574 and 615 nm, respectively. As the concentration of Eu³⁺ increased from 0.5 to 10 mol%, the intensities of all the emission bands gradually increased, approached maxima at 10 mol% of Eu³⁺ ions, and then showed a decreasing tendency with further increase in the Eu³⁺ ions due to the concentration quenching. The critical distance between neighboring Eu³⁺ ions for concentration quenching was calculated to be 11.21 Å, indicating that dipole-dipole interaction was the main mechanism of concentration quenching of BaZrO₃:Eu³⁺ phosphors. The results suggest that the orange emission intensity can be modulated by doping the appropriate concentration of Eu³⁺ ions.

• Proceedings of the Korean Vacuum Society Conference
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• 2012.02a
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• pp.191-191
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• 2012

InP quantum dot (QD) - organosilicon nanocomposites were synthesized and their photoluminescence quenching was mainly investigated because of their applicability to white LEDs (light emitting diodes). The as-synthesized InP QDs which were capped with myristic acid (MA) were incompatible with typical silicone encapsulants. Post ligand exchange the MA with a new ligand, 3-aminopropyldimethylsilane (APDMS), resulted in soluble InP QDs bearing Si-H groups on their surface (InP-APDMS) which allow embedding the QDs into vinyl-functionalized silicones through direct chemical bonding, overcoming the phase separation problem. However, the ligand exchange from MA to APDMS caused a significant decrease in the photoluminescent efficiency which is interpreted by ligand induced surface corrosion relying on theoretical calculations. The InP-APDMS QDs were cross-linked by 1,4-divinyltetramethylsilylethane (DVMSE) molecules via hydrosilylation reaction. As the InP-organosilicon nanocomposite grew, its UV-vis absorbance was increased and at the same time, the PL spectrum was red-shifted and, very interestingly, the PL was quenched gradually. Three PL quenching mechanisms are regarded as strong candidates for the PL quenching of the QD nano-composites, namely the scattering effect, Forster resonance energy transfer (FRET) and cross-linker tension preventing the QD's surface relaxation.

• Journal of the Korean institute of surface engineering
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• v.54 no.3
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• pp.112-118
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• 2021

Dy³⁺- and Eu³⁺-codoped BaWO₄ phosphors for white light-emitting diode were synthesized with different activator ions via a solid-state reaction process. The structural, morphological, and optical properties of the BaWO₄:Dy³⁺,Eu³⁺ phosphors were investigated as a function of Eu³⁺ concentration at a fixed concentration of Dy³⁺ ions. XRD patterns exhibited that all the synthesized phosphors had a tetragonal system, irrespective of the concentrations of Dy³⁺ and Eu³⁺ ions. The excitation spectra of the synthesized phosphors were composed of three intense bands centered at 251, 355, and 393 nm and several weak peaks. For the BaWO₄:Dy³⁺,Eu³⁺ phosphors synthesized with 1 mol% of Eu³⁺, the emission spectra under ultraviolet excitation at 393 nm showed two strong blue and yellow bands at 485 and 577 nm corresponding to the ⁴F_9/2⁶H_15/2 and ⁴F_9/2⁶H_13/2 transitions of Dy³⁺ ions, respectively and several weak bands in the range of 600-700 nm resulting from the 4f transitions of Eu³⁺ ions. As the concentration of Eu³⁺ ions increased, intensities of the blue and yellow emission bands gradually decreased while those of the red emissions increased rapidly and the energy transfer efficiency from Dy³⁺ to Eu³⁺ ions was 95.3% at 20 mol% of Eu³⁺. The optimum white light emission with x=0.363, y=0.357 CIE 1931 chromaticity coordinates was obtained for the sample doped with 5 mol% Dy³⁺ and 1 mol% of Eu³⁺.

• Proceedings of the Korean Vacuum Society Conference
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• 2012.08a
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• pp.174-175
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• 2012

(In, Ga) N-based III-nitride semiconductor materials have been viewed as the most promising materials for the applications of blue and green light emitting devices such as light-emitting diodes (LEDs) and laser diodes. Although the InGaN alloy can have wide range of visible wavelength by changing the In composition, it is very hard to grow high quality epilayers of In-rich InGaN because of the thermal instability as well as the large lattice and thermal mismatches. In order to avoid phase separation of InGaN, various kinds of structures of InGaN have been studied. If high-quality In-rich InGaN/GaN multiple quantum well (MQW) structures are available, it is expected to achieve highly efficient phosphor-free white LEDs. In this study, we proposed a novel InGaN double hetero-structure grown on GaN nano-pyramids to generate broad-band red-color emission with high quantum efficiency. In this work, we systematically studied the optical properties of the InGaN pyramid structures. The nano-sized hexagonal pyramid structures were grown on the n-type GaN template by metalorganic chemical vapor deposition. SiNx mask was formed on the n-type GaN template with uniformly patterned circle pattern by laser holography. GaN pyramid structures were selectively grown on the opening area of mask by lateral over-growth followed by growth of InGaN/GaN double hetero-structure. The bird's eye-view scanning electron microscope (SEM) image shows that uniform hexagonal pyramid structures are well arranged. We showed that the pyramid structures have high crystal quality and the thickness of InGaN is varied along the height of pyramids via transmission electron microscope. Because the InGaN/GaN double hetero-structure was grown on the nano-pyramid GaN and on the planar GaN, simultaneously, we investigated the comparative study of the optical properties. Photoluminescence (PL) spectra of nano-pyramid sample and planar sample measured at 10 K. Although the growth condition were exactly the same for two samples, the nano-pyramid sample have much lower energy emission centered at 615 nm, compared to 438 nm for planar sample. Moreover, nano-pyramid sample shows broad-band spectrum, which is originate from structural properties of nano-pyramid structure. To study thermal activation energy and potential fluctuation, we measured PL with changing temperature from 10 K to 300 K. We also measured PL with changing the excitation power from 48 ${\mu}W$ to 48 mW. We can discriminate the origin of the broad-band spectra from the defect-related yellow luminescence of GaN by carrying out PL excitation experiments. The nano-pyramid structure provided highly efficient broad-band red-color emission for the future applications of phosphor-free white LEDs.