• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.19 no.11
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• pp.1020-1024
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• 2006

Europium$(Eu^{2+}\;or\;Eu^{3+})$-activated calcium aluminium silicate phosphors were synthesized for the first time and the structures and luminescence characteristics of these phosphors were investigated. The phosphors in this study emitted blue, green, and even red light depending on the starting milterials and annealing conditions for synthesis. In addition, the structure was also changed when the different starting materials were used. When $CaCO_3$ was used as a starting material, tetragonal $Ca_2Al_2SiO_7$ was formed. However, pure green light was emitted when the annealing was conducted in reduced atmosphere and red one was emitted by annealing in air. In the case of $CaSiO_3$ as a starting material, triclinic $CaAl_2Si_2O_8$ was formed and only pure blue emission was observed. Moreover, this blue phosphor exhibited higher intensity than that of commercial YAG:Ce phosphor, which showed the possibility of application on the phosphor for new light source such as a UV-LED.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.23 no.1
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• pp.14-17
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• 2010

$ZnGa_2O_4$ powder were prepared by combustion method and $Mn^{2+}$ ions, a green luminescence activator, and $Cr^{3+}$ ions, a red luminescence activator were separately doped into $ZnGa_2O_4$. The characteristics of the synthesized nano powder were investigated by means of X-ray diffraction (XRD), Scanning Electron Microscope (SEM), and photoluminescence (PL). The various $ZnGa_2O_4$ peaks, with the (311) main peak, appeared at all sintering temperature XRD patterns. The PL specctrums of $ZnGa_2O_4$ powder showed main peak of 425 nm, and maximum intensity at the sintering temperature of $1200^{\circ}C$. SEM images shown that nano sized particles(about 200 nm) were of spherical shape. The characteristics of $ZnGa_2O_4$ containing 0.004 mol $Mn^{2+}$(505 nm, green) and $ZnGa_2O_4$ containg 0.002 mol $Cr^{3+}$ (696 nm, red) were shown to be the best.

• Journal of Surface Science and Engineering
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• v.48 no.5
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• pp.211-217
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• 2015

To fabricate white LED having a high color rendering index value, red color phosphor mixed with the green color phosphor together in the blue chip, namely the blue chips with RG phosphors packaging is most favorable for high power white LEDs. In our previous papers, we reported on successful syntheses of $Sr_{2-}$ $Si_5N_8:Eu^{2+}$ and $CaAlSiN_3$ phosphors for red phosphor. In this work, for high power green phosphor, greenemitting ternary nitride $Ba_3Si_6O_{12}N_2:Eu^{2+}$ phosphor was synthesized in a high frequency induction furnace under $N_2$ gas atmosphere at temperatures up to $1400^{\circ}C$ using $EuF_3$ as a raw material for $Eu^{2+}$ dopant. The effects of molar ratio of component and experimental conditions on luminescence property of prepared phosphors have been investigated. The structure and luminescence properties of prepared $Ba_3Si_6O_{12}N_2:Eu^{2+}$ phosphors were investigated by XRD and photoluminescence spectroscopy. The excitation spectra of $Ba_3Si_6O_{12}N_2:Eu^{2+}$ phosphors indicated broad excitation wavelength range of 250 - 500 nm, namely from UV to blue region with distinct enhanced emission spectrum peaking at ${\approx}530nm$.

• 한국정보디스플레이학회:학술대회논문집
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• 2008.10a
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• pp.581-584
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• 2008

$BaMgP_2O_7$:Eu,Mn phosphors for white emission were synthesized and their luminescent properties were investigated under UV excitation. The phosphor emits two colors: a blue band by $Eu^{2+}$ and a red band by $Mn^{2+}$. Due to the efficient energy transfer from $Eu^{2+}$ to $Mn^{2+}$, the red emission positioned at 615 nm is greatly enhanced with increasing $Mn^{2+}$ content up to 17.5 mol%.

• 한국정보디스플레이학회:학술대회논문집
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• 2005.07b
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• pp.1576-1579
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• 2005

With varying rapid thermal annealing (RTA) temperature, luminescence properties of $Zn_{0.75}Mg_{0.25}S:Mn$ thin film deposited by RF-magnetron sputtering technique were investigated. In this study, $Zn_{0.75}Mg_{0.25}S:Mn$ thin film phosphor showed more red emission than those of the previous studies when annealed around 600 or $650^{\circ}C$. Although all samples were deposited from identical source composition, a main peak wavelength of photoluminescence spectra of $Zn_{0.75}Mg_{0.25}S:Mn$ shifted toward shorter wavelengths depending upon increase of RTA temperature. The same dependence of wavelength on RTA temperature was also observed in cathodoluminescence as well as electroluminescence measurements. It was revealed that the change of the luminescence properties were originated from structural changes in $Zn_{0.75}Mg_{0.25}S:Mn$ thin film phosphor from cubic to hexagonal phases analyze using conventional X-ray pole figure mapping. The phase transition would be the origin of luminescence property changes with respect to RTA temperature.

• Current Optics and Photonics
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• v.1 no.4
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• pp.358-363
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• 2017

In this study, we present a detailed investigation of luminescence properties of a blue light-emitting diode using InGaN/GaN (indium component is 17.43%) multiple quantum wells as the active region grown on patterned sapphire substrate by low-pressure metal-organic chemical vapor deposition (MOCVD). High-resolution X-ray diffraction (HRXRD), atomic force microscopy (AFM), scanning electron microscopy (SEM), Raman scattering (RS) and photoluminescence (PL) measurements are employed to study the crystal quality, the threading dislocation density, surface morphology, residual strain existing in the active region and optical properties. We conclude that the crystalline quality and surface morphology can be greatly improved, the red-shift of peak wavelength is eliminated and the superior blue light LED can be obtained because the residual strain that existed in the active region can be relaxed when the LED is grown on patterned sapphire substrate (PSS). We discuss the mechanisms of growing on PSS to enhance the superior luminescence properties of blue light LED from the viewpoint of residual strain in the active region.

• Bulletin of the Korean Chemical Society
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• v.32 no.3
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• pp.973-976
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• 2011

The addition of organic ligand (${\beta}$-diketone or heterocyclic compound) to the europium (III)-containing ionic liquid resulted in bright luminescent soft materials with the molar ratio of europium/ionic liquid (IL)/ligand being 1:3:1 that exhibit bright red light under UV lamp. The luminescent properties such as emission features and lifetime of $^5D_0$ $Eu^{3+}$ excited level are dependent on the organic ligands. The materials were characterized by FT-IR and luminescence spectroscopy. The data shows that at least parts of the ILs (carboxylic acid) are replaced with ${\beta}$-diketone ligand rather than the formation of europium complex with the molar ratio of $Eu^{3+}$:IL: ligand being 1:3:1, while no ILs could be replaced by the heterocyclic ligand such as Bpy and Phen.

• Journal of the Korean Ceramic Society
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• v.35 no.8
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• pp.801-806
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• 1998

$Eu^{3+}$ -doped $Y_2$$O_3$ phosphors has been prepared by a polymerized complex method and investigated their powder and luminescence properties. They were compared with phosphors prepared by a solid state reac-thion method. The phosphors synthesized have been characterized by X-ray diffraction low-voltage lu-minescent emission spectroscopy etc. Under low-voltage electron excitation $Eu^{3+}$-doped $Y_2$$O_3$ exhibited a strong narrow-band red emission peaking at 612nm. On the other hand the critical value for concentration quenching of sample prepared by the polymerized complex method fired at $1400^{\circ}C$ is x=0.05 for $(Y_{1-x}Eu_x__2O_3$ The emission intensity of phosphors prepared by the polymerized complex method was higher than that of phosphors prepared by the solid state reaction method.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.21 no.11
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• pp.1019-1023
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• 2008

Photoluminescence properties of $SrTiO_3$:Sm red phosphors synthesized by solid state reaction method were studied under 254 nm excitation. Emission bands at 576 nm and 616 nm in heavily $Sm^{3+}$ ion doped $SrTiO_3$:Sm phosphors were observed, which were attributed to $^4G_{5/2}\rightarrow{^6}H_{5/2}$ and $^4G_{5/2}\rightarrow{^6}H_{7/2}$ transition of $Sm^{3+}$, respectively. The $Sm^{3+}$ ion concentration exhibiting the maximum emission intensity in the $SrTiO_3$:Sm was 30 mol%. The luminescence caused by $Sm^{3+}$ in the $SrTiO_3$:Sm phosphors was interpreted by the energy transfer between $Sm^{3+}$ ions.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.21 no.9
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• pp.825-828
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• 2008

$Sr_xBa_{(1-x)}TiO_3$ red phosphors doped with Pr(0.13 mol%) and Al(O.23 mol%) were synthesized by solid state reaction method. Orthorhombic perovskite structure with increasing value of x in $Sr_xBa_{(1-x)}TiO_3$:Pr,Al phosphors changed to cubic perovskite structure. Emission bands at 615 nm and 492 nm in $Sr_{0.25}Ba_{0.75}TiO_3$:Pr,Al and $BaTiO_3$:Pr,Al phosphors were observed at room temperature. The main cause of green luminescence at 492 nm was explained by the change of the 4f5d band.