• 한국정보디스플레이학회:학술대회논문집
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• 2009.10a
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• pp.411-414
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• 2009

We report single and two-stacked WOLED. Two-stacked WOLED structure adopts fluorescent blue EML and phosphorescent (red+green) EML. Current efficiency, EQE and color coordinate of two-stacked WOLED are 54.5cd/A, 28.8% and CIExy (0.322, 0.345), respectively. Those of single WOLED are also 20cd/A, 10% and CIExy (0.29, 0.37), respectively. Dual-plate OLED Display (DOD) employing the single WOLED shows high aperture ratio up to 67% in 2-inch panel of which pixel size is equivalent to that of 32 inch Full HD.

• Journal of the Korean institute of surface engineering
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• v.48 no.3
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• pp.105-109
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• 2015

We studied emission characteristics of blue fluorescent multi-tandem OLEDs using $Al/MoO_x$ as charge generation layer(CGL). Threshold voltage for 2, 3, 4, and 5 units tandem OLEDs was 8, 11, 14 and 18 V, respectively. The threshold voltage in multi-tandem OLEDs was lower than multiple of 4 V for the single OLED. Maximum current efficiency and maximum quantum efficiency of single OLED were 7.6 cd/A and 5.5%. Maximum current efficiency for 2, 3, 4, and 5 units tandem OLEDs was 22.6, 31.4, 41.2, and 46.6 cd/A, respectively. Maximum quantum efficiency for 2, 3, 4, and 5 units tandem OLEDs was 11.8, 15.8, 21.8, and 25.6%, respectively. The maximum current efficiency and maximum quantum efficiency in multi-tandem OLEDs were higher than multiple of those for the single OLED. The intensity for 508 nm peak was changed and the peak wavelength was red shift by increase of tandem unit in electroluminescent emission spectra. These phenomena can be caused by micro-cavity effect with increasing of organic layer thickness.

• Journal of the Semiconductor & Display Technology
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• v.8 no.4
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• pp.15-19
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• 2009

A high efficient organic red light emitting device with structure of DNTPD/TAPC/$Bebq_2$ :[$(pq)_2Ir(acac)$, SFC-411]/SFC-137 was fabricated on the plastic substrate, which can be applied in the fields of flexible display and illumination. In the device structure, N,N'-diphenyl-N,N'-bis-[4-(phenyl-m-tolylamino)-phenyl]-biphenyl-4,4'-diamine[DNTPD] as a hole injection layer and 1,1-bis-(di-4-tolylaminophenyl) cyclohexane [TAPC] as a hole transport were used. Bis(10-hydroxybenzo[h]quinolinato) beryllium complex [$Bebq_2$] was used as a light emitting host material. The host material, $Bebq_2$ was doubly doped with volume ratio of 7% iridium(III)bis-(2-phenylquinoline)acetylacetonate[$(pq)_2$Ir(acac)] and 3% SFC-411[red phosphor dye coded by the proprietary company]. And then, SFC-137 was used as an electron transport layer. The luminous intensity and current efficiency of the fabricated device were $22,780\;cd/m^2$ at 9V and 17.3 cd/A under $10,000\;cd/m^2$, respectively. The maximum current efficiency of the device was 22.4cd/A under $580\;cd/m^2$.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2005.11a
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• pp.309-310
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• 2005

In the fabrication of high performance red organic light emitting diode, 2-TNA TA [4,4',4" -tris (2-naphthylphenyl- phenylamino)-triphenylamine] as hole injection material and N PH [N,N'-bis (1-naphthyl) -N,N' -diphenyl-1, 1'-biphenyl-4,4'- diamine] as hole transport material were deposited on the ITO (indium tin oxide)/glass substrate by vacuum evaporation, And then, red color emission layer was deposited using Alq3 as a host material and Rubrene (5,6,11,12- tetraphenylnaphthacene) and GDI 4234 as dopants. Finally, small molecular weight OLED with the structure of ITO/2-TNATA/ NPB/Alq3+Rubrene+GDI4234/Alq3/LiF/Al was obtained by in-situ deposition of Alq3, LiF and Al as electron transport material, electron injection material and cathode. respectively. Green OLED fabricated in our experiments showed the color coordinate of CIE(0.65,0.35) and the maximum luminescence efficiency of 2.1 lm/W at 7 V with the peak emission wavelength of 632 nm.

• Journal of the Korean institute of surface engineering
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• v.45 no.1
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• pp.20-24
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• 2012

Multilayer passivation film on OLED with organic/inorganic hybrid structure as to diminish the thermal stress and expansion was researched to protect device from the direct damage of $O_2$ and $H_2O$ and improve life time characteristics. Red OLED doped with 1 vol.% Rubrene in $Alq_3$ was used as a basic device. The films consist of ITO(150 nm)/ELM200_HIL(50 nm)/ELM002_HTL(30 nm)/$Alq_3$: 1 vol.% Rubrene(30 nm)/$Alq_3$(30 nm) and LiF(0.7 nm)/Al(100 nm) which were formed in that order. Using LiF/$SiN_x$ as a buffer layer was determined because it significantly improved life time characteristics without suffering damage in the process of forming passivation film. Multilayer passivation film on buffer layer didn't produce much change in current efficiency, while the half life time at 1,000 $cd/m^2$ of OLED/LiF/$SiN_x$/E1/$SiN_x$ was 710 hours which showed about 1.5 times longer than OLED/LiF/$SiN_x$/E1 with 498 hours. futhermore, OLED/LiF/$SiN_x$/E1/$SiN_x$/E1/$SiN_x$ with 1301 hours showed about twice than OLED/LiF/$SiN_x$/E1/$SiN_x$ which demonstrated that superior characteristics of life time was obtained in multilayer passivation film. Through the above result, it was suggested using LiF/$SiN_x$ as a buffer layer could reduce the damage from the difference of thermal expansion coefficient in OLED with protective films, and epoxy layer in multilayer passivation film could function like a buffer between $SiN_x$ inorganic layers with relatively large thermal stress.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.27 no.4
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• pp.232-237
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• 2014

We have fabricated white organic light-emitting diodes (OLEDs) by co-doping of red and blue phosphorescent guest emitters into the single host layer. Tris(2-phenyl-1-quinoline) iridium(III) [$Ir(phq)_3$] and iridium(III)bis[(4,6-di-fluorophenyl)-pyridinato-$N,C^{2^{\prime}}$]picolinate (FIrpic) were used as red and blue dopants, respectively. The effects of dopant concentration on the emission, carrier conduction and external quantum efficiency characteristics of the devices were investigated. The emissions on the guest emitters were attributed to the energy transfer to the guest emitters and direct excitation by trapping of the carriers on the guest molecules. The white OLED with 5% FIrpic and 2% $Ir(phq)_3$ exhibited a maximum external quantum efficiency of 19.9% and a maximum current efficiency of 45.2 cd/A.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.26 no.7
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• pp.539-544
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• 2013

To study the encapsulation method for heat dissipation of high brightness organic light emitting diode (OLED), red emitting OLED of ITO (150 nm) / 2-TNATA (50 nm) / NPB (30 nm) / $Alq_3$ : 1 vol.% Rubrene (30 nm) / $Alq_3$ (30 nm) / LiF (0.7 nm) / Al (200 nm) structure was fabricated, which on $Alq_3$ (150 nm) / LiF (150 nm) as buffer layer and Al as protective layer was deposited to protect the damage of OLED, and subsequently it was encapsulated using attaching film and metal sheet. The current density, luminance and power efficiency was improved according to thickness of Al protective layer. The emission spectrum and the Commission International de L'Eclairage (CIE) coordinate did not have any effects on encapsulation process using attaching film and metal sheet The lifetime of encapsulated OLED using attaching film and metal sheet was 307 hours in 1,200 nm Al thickness, which was increased according to thickness of Al protective layer, and was improved 7% compared with 287 hours, lifetime of encapsulated OLED using attaching film and flat glass. As a result, it showed the improved current density, luminance, power efficiency and the long lifetime, because the encapsulation method using attaching film and metal sheet could radiate the heat on OLED effectively.

• 한국정보디스플레이학회:학술대회논문집
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• 2008.10a
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• pp.461-464
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• 2008

We have developed low voltage driving red phosphorescent organic light-emitting devices using a new electron transport layer. $Ir(piq)_3$ and CBP were used as a phosphorescent dopant and an emission host, respectively. The device exhibits a luminance of $1000\;cd/m^2$ at a voltage of 2.8 V. This high luminance at low voltage results from a high electron conduction behavior of the new electron transport layer.

• Proceedings of the IEEK Conference
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• 2000.11b
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• pp.265-268
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• 2000

Organic electroluminescent(EL) devices have been expected to be useful in novel-type flat-panel displays. This paper has fabricated and analyzed a red organic EL device with the use of organic dyes, such as DCMI and Nile Red. In this paper, the light emitting layer consists of tris-(8-hydroxyquiniline) aluminum(Alq$_3$) doped with organic dyes.

• 한국정보디스플레이학회:학술대회논문집
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• 2006.08a
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• pp.1587-1590
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• 2006

Through the engineering of recombination region and energy transfer in organic light emitting device, blue and red light emitting device with good color stability has been successfully obtained. A Color control layer (CCL), which emits green light through the energy transfer from the emission layers, has been introduced into the blue and red light emitting device for RGB white OLED. The RGB white OLED showed the current efficiency of 13 cd/A and the CIE coordinates of (0.33, 0.38) at $1000\;cd/m^2$. The device exhibited very stable spectrum with respect to operating current density and the CIE coordinates varied from (0.34, 0.38) to (0.31, 0.37) for $100-22000\;cd/m^2$.