• Journal of Korean Neurosurgical Society
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• 제59권2호
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• pp.117-121
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• 2016

Objective : Hemorrhagic moyamoya disease (hMMD) is associated with a poor clinical course. Furthermore, poorer clinical outcomes occur in cases of recurrent bleeding. However, the effect of hemodynamic insufficiency on rebleeding risk has not been investigated yet. This study evaluated the prognostic implications of the perfusion status during the clinical course of adult hMMD. Methods : This retrospective study enrolled 52 adult hMMD patients between April 1995 and October 2010 from a single institute. Demographic data, clinical and radiologic characteristics, including hemodynamic status using single photon emission computed tomography (SPECT), and follow up data were obtained via a retrospective review of medical charts and imaging. Statistical analyses were performed to explore potential prognostic factors. Results : Hemodynamic abnormality was identified in 44 (84.6%) patients. Subsequent revascularization surgery was performed in 22 (42.3%) patients. During a 58-month (median, range 3-160) follow-up assessment period, 17 showed subsequent stroke (hemorrhagic n=12, ischemic n=5, Actuarial stroke rate $5.8{\pm}1.4%/year$). Recurrent hemorrhage was associated with decreased basal perfusion (HR 19.872; 95% CI=1.196-294.117) and omission of revascularization (10.218; 95%; CI=1.532-68.136). Conclusion : Decreased basal perfusion seems to be associated with recurrent bleeding. Revascularization might prevent recurrent stroke in hMMD by rectifying the perfusion abnormality. A larger-sized, controlled study is required to address this issue.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2016년도 제50회 동계 정기학술대회 초록집
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• pp.415.2-415.2
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• 2016

Triboelectric nanogenerator (TENG) is one of ways to convert mechanical energy sound, waves, wind, vibrations, and human motions to available electrical energy. The principal mechanism to generate electrical energy is based on contact electrification on material surface and electrostatic induction between electrodes. The performance of TENG are dependent on amount of the input mechanical energy and characteristics of triboelectric materials. Furthermore, the whole TENG system including mechanical structure and electrical system can effect on output performance of TENG. In this work, we investigated the effect of gear train on output performance and power conversion efficiency (PCE) of TENG under a given input energy. We applied the gear train on mechanical structure to improve the contact rate. We measured the output energy under a constant input energy by controlling the size of the working gear. We prepared gears with gear ratios (rin/rw) of 1, 1.7, and 5. Under the constant input energy, the voltage and current from our gear-based TENG system were enhanced up to the maximum of 3.6 times and 4.4 times, respectively. Also, the PCE was increased up to 7 times at input frequency of 1.5 Hz. In order to understand the effect of kinematic design on TENG system, we performed a capacitor experiment with rectification circuit that provide DC voltage and current. Under the input frequency of 4.5 Hz, we obtained a 3 times enhanced rectifying voltage at a gear ratio of 5. The measured capacitor voltage was enhanced up to about 8 fold in using our TENG system. It is attributed that our gear-based TENG system could improve simultaneously the magnitude as well as the generation time of output power, finally enhancing output energy. Therefore, our gear-based TENG system provided an effective way to enhance the PCE of TENGs operating at a given input energy.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2008년도 춘계학술대회 및 기술 세미나 논문집 디스플레이 광소자
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• pp.27-28
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• 2008

We have studied an organic layer-thickness dependent electrical and optical properties of organic light-emitting diodes in a device structure of ITO/TPD/$Alq_3$/LiF/Al. While a hole-transport layer thickness of TPD was varied from 35 to 65nm, an emissive layer thickness of $Alq_3$ was varied from 50 to 100nm. A ratio of those two layers was kept to about 2:3. Variation of the layer thickness changes a traverse time of injected carriers across the organic layer, so that it may affect on the chance of probability of exciton formation. Current-voltage-luminance characteristics of the devices show that there are typical rectifying behaviors, and the luminance reaches about $30,000cd/m^2$. Thickness-dependent current efficiency shows that there is a gradual increase of the efficiency as the total layer thickness increases. The efficiency becomes saturated to be about 10cd/A when the total thickness is above 140nm. They show that emission was from the $Alq_3$ layer, because the peak wavelength is about 525nm. View angle-dependent emission spectra show that the emission intensity decreases as the angle increases.

• 조명전기설비학회논문지
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• 제17권6호
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• pp.105-112
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• 2003

AC/DC 전력변환장치로서 위상제어 컨버터나 출력전압을 제어할 수 없는 다이오드 정류기는 역률저하 및 저차고조파 발생의 문제점을 가진다. 본 논문에서는 역률개선 및 고조파 감소의 문제점을 극복하기 위하여 3상 PWM AC/DC Boost 컨버터에 대해 연구하였다. 제안한 컨버터의 특성은 입력 단에 전류 센서 없이 전압 센서만을 사용하여 입력전류의 위상을 조정하는 비교적 간단한 알고리즘으로 단위역률을 구현하였으며, 일정 주파수로 스위칭 소자를 구동시키는 정현 PWM 방식을 채용하여 불규칙한 스위칭 주파수 방식에서 나타나는 입력필터의 설계 및 스위칭 소자 선정에 대한 어려움을 극복하였다. 본 논문에서 제안한 제어알고리즘을 시뮬레이션 한 결과 부하영역 및 발전영역에서도 단위역률이 잘 이루어졌으며 DC link 단의 출력전압이 거의 리플 없이 다이나믹한 응답특성을 보였다. 또 시뮬레이션으로 얻어진 회로정수를 바탕으로 인덕터 및 커패시터의 용량을 적절한 크기로 산정하여 실험 에 적용한 결과 같은 부하조건에서 다이오드 정류기와 비교하여 역률 및 저차 고조파가 현저하게 개선되었음을 알 수 있었다.

• 대한방사선기술학회지:방사선기술과학
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• 제18권2호
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• pp.61-73
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• 1995

For the managements of the diagnostic X-ray equipments, the authors examined the output of single phase rectification assembly, Three phase rectification assembly and serial radiographic appartus, and got the following conclusions. 1. When the tube voltages in X-ray control panels ware compared to the measured values on the kVp pulse meter, only little differences were detected in all the X-ray equipments. And most of the equipments were all well managed within the internationally permitted limits, excepting the 12.02 % error at 120 kVp in three phase rectifying assembly. 2. As for the X-ray qualities affecting the X-ray images, the serial radiographic apparatus showed excellence, while the single phase rectification assembly were somewhat inferior to the others only maining the internationally recommended limits. 3. The tube voltage ranges where the X-ray output showed excellence were $100{\sim}200\;mA$ in serial radiographic apparatus, $200{\sim}350\;mA$ in three phase rectification assembly and $350{\sim}400\;mA$ in single phase rectification assembly respectively. 4. In the repeatability test of the X-ray equipments, CVs were in the range of $0.0029{\sim}0.049$, which is within the HEW or KS standards. Consequently all the equipments are thought to be well-manage. 5. This study on characteristics and output of the X-ray equipments was accomplished within a limited short time. Long-time researches on the function managements for the X-ray equipments should be followed along with the periodical checking the output for reduction of X-ray exposures to the patients or radio-technologists, and for maintanance and prediction of trouble of the equipments.

• 한국자기학회지
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• 제19권3호
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• pp.94-99
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• 2009

Pulsed Laser Deposition 방법으로 합성된 $La_{0.7}Ca_{0.3}MnO_3$ 박막의 물리적 특성을 증착 조건에 따라 조사하였다. 기존에 알려진 바와는 매우 달리 매우 낮은 산소 분압 ($1.0{\times}10^{-5}$, $1.0{\times}10^{-6}Torr$)에서도 큐리 온도가 높은 박막의 합성이 이루어졌으며 이는 박막의 합성 과정에서 쳄버 내부의 산소 분압보다는 플라즈마 plume의 모양과 그 내부 물질들의 운동에너지가 박막의 질을 결정하는 매우 중요한 요소임을 의미한다. 이러한 양질 박막의 합성 증착 조건을 이용하여 $La_{0.7}Ca_{0.3}MnO_3$ 을 Nb가 도핑된 $SrTiO_3$ 기판위에 증착함으로써 p-n 접합을 제작하였으며 이의 전류-전압곡선이 정류 특성을 보였고 그 모양은 자기장에 의해 바뀔 수 있음을 확인하였다.

• 한국재료학회지
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• 제29권7호
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• pp.456-462
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• 2019

ZnO thin-films are grown on a p-Si(111) substrate by RF sputtering. The effects of growth temperature and $O_2$ mixture ratio on the ZnO films are investigated by scanning electron microscopy (SEM), X-ray diffraction (XRD), and room-temperature photoluminescence (PL) measurements. All the grown ZnO thin films show a strong preferred orientation along the c-axis, with an intense ultraviolet emission centered at 377 nm. However, when $O_2$ is mixed with the sputtering gas, the half width at half maximum (FWHM) of the XRD peak increases and the deep-level defect-related emission PL band becomes pronounced. In addition, an n-ZnO/p-Si heterojunction diode is fabricated by photolithographic processes and characterized using its current-voltage (I-V) characteristic curve and photoresponsivity. The fabricated n-ZnO/p-Si heterojunction diode exhibits typical rectifying I-V characteristics, with turn-on voltage of about 1.1 V and ideality factor of 1.7. The ratio of current density at ${\pm}3V$ of the reverse and forward bias voltage is about $5.8{\times}10^3$, which demonstrates the switching performance of the fabricated diode. The photoresponse of the diode under illumination of chopped with 40 Hz white light source shows fast response time and recovery time of 0.5 msec and 0.4 msec, respectively.

• 보건행정학회지
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• 제33권4호
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• pp.411-420
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• 2023

Background: The purpose of this study was to analyze the demand and supply status of patient beds by type of medical institution, categorized into 70 clinical privilege, in order to understand the regional bed supply situation. Methods: Utilizing the 70 clinical privilege defined by the Ministry of Health and Welfare, we calculated bed demand and supply quantities from 2019 to 2021 using data from Statistics Korea and the Health Insurance Statistical Yearbook. The bed demand calculation formula was based on the detailed guidelines for the medical sector by the Korea Development Institute and the 3rd edition of bed supply basic policies announced by the Ministry of Health and Welfare. Additionally, to mitigate distorted bed supply situations caused by factors such as regional levels and patient outflows, we classified bed supply types using the population decrease index indicator published by the Ministry of Public Administration and Security. Results: Among the 70 clinical privilege, it was analyzed that a relatively balanced bed supply situation exists overall, irrespective of the type of healthcare institution. However, in medical institutions at or above the level of hospitals, regions with bed supply ratios exceeding 20% compared to demand, particularly in institutions at or above the level of general hospitals, showed a relatively high rate of demand diversion. Conclusion: We have identified the bed supply types in the 70 clinical privilege in South Korea. Based on the results of this study, we emphasize the need for bed supply policies that consider regional characteristics. It is expected that this research can serve as fundamental data for future efforts aimed at managing or rectifying bed supply imbalances on a regional basis.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2013년도 제44회 동계 정기학술대회 초록집
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• pp.410-410
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• 2013

Next-generation nonvolatile memory (NVM) has attracted increasing attention about emerging NVMs such as ferroelectric random access memory, phase-change random access memory, magnetic random access memory and resistance random access memory (RRAM). Previous studies have demonstrated that RRAM is promising because of its excellent properties, including simple structure, high speed and high density integration. Many research groups have reported a lot of metal oxides as resistive materials like TiO2, NiO, SrTiO3 and ZnO [1]. Among them, the ZnO-based film is one of the most promising materials for RRAM because of its good switching characteristics, reliability and high transparency [2]. However, in many studies about ZnO-based RRAMs, there was a problem to get lower current level for reducing the operating power dissipation and improving the device reliability such an endurance and an retention time of memory devices. Thus in this paper, we investigated that highly reproducible bipolar resistive switching characteristics of W doped ZnO RRAM device and it showed low resistive switching current level and large ON/OFF ratio. This may be caused by the interdiffusion of the W atoms in the ZnO film, whch serves as dopants, and leakage current would rise resulting in the lowering of current level [3]. In this work, a ZnO film and W doped ZnO film were fabricated on a Si substrate using RF magnetron sputtering from ZnO and W targets at room temperature with Ar gas ambient, and compared their current levels. Compared with the conventional ZnO-based RRAM, the W doped ZnO ReRAM device shows the reduction of reset current from ~$10^{-6}$ A to ~$10^{-9}$ A and large ON/OFF ratio of ~$10^3$ along with self-rectifying characteristic as shown in Fig. 1. In addition, we observed good endurance of $10^3$ times and retention time of $10^4$ s in the W doped ZnO ReRAM device. With this advantageous characteristics, W doped ZnO thin film device is a promising candidates for CMOS compatible and high-density RRAM devices.

• 전자공학회논문지D
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• 제35D권11호
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• pp.70-77
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• 1998

본 논문에서는 nickel/silicon carbide(Ni/SiC) 접합에 의한 Schottky 다이오드를 제작하고, 그 전기적 특성을 조사하였다. Ni/4H-SiC의 경우, 산화막 모서리 단락을 하였을 때 상온에서 973V의 역방향 항복전압이 측정되었으며 이는 모서리 단락되지 않은 Schottky 다이오드의 역방향 항복전압 430V에 비해 매우 높았다. Ni/6H-SiC Schottky 다이오드의 경우, 산화막으로 모서리 단락시켰을 때와 시키지 않았을 때의 역방향 항복전압은 각각, 920V와 160V 였다. 고온에서의 소자 특성도 매우 좋아서 Ni/4H-SiC Schottky 다이오드와 Ni/6H-SiC Schottky 다이오드 모두 300℃까지 전류 특성의 변화가 거의 없었으며 550℃에서도 양호한 정류 특성을 보였다. 상온에서의 Schottky barrier height와 이상인자(ideality factor) 및 specific on-resistance는 Ni/4H-SiC의 경우는 1.55eV, 1.3, 3.6×10/sup -2/Ω·㎠이었으며 Ni/6H-SiC Schottky 다이오드의 경우에 1.24eV, 1.2, 2.6×10/sup -2Ω·㎠/로 나타났다. 실험 결과 Ni/4H-SiC 및 Ni/6H-SiC Schottky 다이오드 모두 고온, 고전압 소자로서 우수한 특성을 나타냄이 입증되었다.