• 대한전기학회논문지
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• 제43권6호
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• pp.916-926
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• 1994

A high frequency and soft-switched AC-to-DC rectifier employing a series-type resonant circuit is proposed to overcome the disadvantages of the conventional peak-rectifying circuit. Using the proposed rectifier, the high power factor and low harmonic currents are obtained in the AC line. Furthermore, several advantages such as the high power density and wide output voltage range can be available. Through the simulation and experimental results, the usefulness of the proposed rectifier is verified.

• 전력전자학회:학술대회논문집
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• 전력전자학회 2005년도 전력전자학술대회 논문집
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• pp.295-297
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• 2005

This paper presents a novel current driving method for the synchronous rectifier (SR) in a Flyback topology. The proposed current driven synchronous rectifier features low Power loss, good performance and the gate voltage of FET in the synchronous rectifier is easily controlled by zener voltage. The proposed SR driving method is implemented in a 200W Flyback converter with 400Vdc input and achieved excellent performance at full load.

• 대한전기학회:학술대회논문집
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• 대한전기학회 2005년도 추계학술대회 논문집 전기기기 및 에너지변환시스템부문
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• pp.89-91
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• 2005

In This paper the convertor topology using single diode bridge rectifier for the now two-phase switched reluctance motor is proposed. The single diode bridge rectifier is supplied by the Ac voltage source. The nonlinear model of two-phase SRM is implement by maxwell and result show the photographic.

• 대한전기학회:학술대회논문집
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• 대한전기학회 2005년도 제36회 하계학술대회 논문집 B
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• pp.1395-1397
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• 2005

This paper presents a novel current driving method for the synchronous rectifier(SR) in a flyback topology. The proposed current driven synchronous rectifier features low power loss, good performance and the gate voltage of FET in the synchronous rectifier is easily controlled by resistor ratio. The proposed SR driving method is implemented in a 200W Flyback converter with 400Vdc input and achieved excellent performance at full load.

• 대한전자공학회논문지SD
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• 제45권6호
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• pp.10-15
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• 2008

본 논문에서는 UHF RFID 응용을 위한 새로운 NMOS 게이트 교차연결 전류미러형 브리지 정류기를 제시하였다. 제시된 정류기의 직류 변환 특성은 고주파 등가회로를 이용하여 해석하였으며, 주파수 증가에 따른 게이트 누설전류를 회로적인 방법으로 줄일 수 있는 게이트 커패시턴스 감소 기법을 이론적으로 제시하였다. 구해진 결과, 제안한 정류기는 기존의 게이트 교차 연결형 정류기와 거의 같은 직류 출력전압 특성을 보이면서도, 게이트 누설전류가 1/4 이하로 감소하고, 부하저항에서의 소비전력도 30% 이상 감소하며, 부하저항의 변화에 대해 보다 안정적인 직류전압을 공급함을 알 수 있었다. 또한 제안한 정류기는 13.56MHz의 HF(for ISO 18000-3)부터 915MHz의 UHF(for ISO 18000-6) 및 2.45GHz의 마이크로파 대역 (for ISO 18000-4)까지의 전 주파수 범위에 대해 충분히 높고 잘 정류된 직류 변환 특성을 보여 특정 주파수 대역을 사용하는 다양한 RFID 시스템의 트랜스폰더 칩 구동을 위한 범용 정류기로 사용될 수 있다.

• Journal of Power Electronics
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• 제16권3호
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• pp.1226-1235
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• 2016

For wearable health monitoring systems, a fundamental problem is the limited space for storing energy, which can be translated into a short operational life. In this paper, a highly efficient active voltage doubling rectifier with a wide input range for micro-piezoelectric energy harvesting systems is proposed. To obtain a higher output voltage, the Dickson charge pump topology is chosen in this design. By replacing the passive diodes with unbalanced-biased comparator-controlled active counterparts, the proposed rectifier minimizes the voltage losses along the conduction path and solves the reverse leakage problem caused by conventional comparator-controlled active diodes. To improve the rectifier input voltage sensitivity and decrease the minimum operational input voltage, two low power common-gate comparators are introduced in the proposed design. To keep the comparator from oscillating, a positive feedback loop formed by the capacitor C is added to it. Based on the SMIC 0.18-μm standard CMOS process, the proposed rectifier is simulated and implemented. The area of the whole chip is 0.91×0.97 mm², while the rectifier core occupies only 13% of this area. The measured results show that the proposed rectifier can operate properly with input amplitudes ranging from 0.2 to 1.0V and with frequencies ranging from 20 to 3000 Hz. The proposed rectifier can achieve a 92.5% power conversion efficiency (PCE) with input amplitudes equal to 0.6 V at 200 Hz. The voltage conversion efficiency (VCE) is around 93% for input amplitudes greater than 0.3 V and load resistances larger than 20kΩ.

• 전기전자학회논문지
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• 제21권1호
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• pp.73-76
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• 2017

실리콘카바이드 소자는 넓은 밴드갭을 갖는 물질로서 많은 주목을 받아왔다. 특히 4H-SiC 쇼트키 배리어 다이오드는 빠른 스위칭 속도와 낮은 순방향 전압강하의 특성으로 인해 널리 사용되고 있다. 그러나 쇼트키 배리어 다이오드의 낮은 신뢰성으로 인한 문제로 대안인 Super Barrier Rectifier(SBR)가 연구되었다. 본 논문은 4H-SiC trench-type accumulation super barrier rectifier(TASBR)를 분석하고 제안한다. 2D 시뮬레이션을 통해 본 구조는 심각한 역방향 저지전압의 감소와 누설전류의 증가가 없는 동시에 순방향 전압 강하는 21.06% 향상됨을 확인 할 수 있었다. 이러한 새로운 정류기 구조를 이용하면 전력손실이 적은 애플리케이션을 기대할 수 있다.

• Journal of information and communication convergence engineering
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• 제1권3호
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• pp.163-168
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• 2003

This paper presents a cascade multilevel PWM rectifier without the isolation transformers for energy build-up at each inverter modules. The features and advantages of the proposed PWM rectifier can be summarized as follows; I) It realizes the high power high voltage AC/DC power conversion, 2) It uses no transformer which is bulky and heavy, 3) It has hybrid structure so that switching devices can be effectively utilized, 4) It produces high quality AC current even in high power high voltage applications, 5) The input power factor remains unity by simple modulation index control. The multilevel rectifier is analyzed by using the circuit DQ transformation whereby the characteristics and control equations are obtained. Finally, it will be shown that the system simulation reveals the validity of analyses.

• Journal of Power Electronics
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• 제6권4호
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• pp.356-365
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• 2006

This paper presents an improved three-phase PFC power rectifier with a three-phase diode rectifier cascaded four-switch boost converter. Its operating principle contains the operating principle of two conventional three-phase PFC power rectifiers: one switch boost converter type and a two switch boost converter type. The operating characteristics of the four switch boost converter type three-phase PFC power rectifier are evaluated from a practical point of view, being compared with one switch boost converter type and two switch boost converter topologies.

• 한국전기전자재료학회논문지
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• 제28권6호
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• pp.371-374
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• 2015

This paper suggests a high performance lateral super barrier rectifier (Lateral SBR) device which has the advantages of both Schottky diode and pn junction, that is, low forward voltage and low leakage current, respectively. Advantage of the proposed lateral SBR is that it can be easily implemented and integrated in current BCD platform. As a result of simulation using TCAD, BVdss = 48 V, $V_F=0.38V$ @ $I_F=35mA$, T_j = $150^{\circ}C$ were obtained with very low leakage current characteristic of 3.25 uA.