• The Transactions of the Korean Institute of Electrical Engineers
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• v.43 no.6
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• pp.916-926
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• 1994

A high frequency and soft-switched AC-to-DC rectifier employing a series-type resonant circuit is proposed to overcome the disadvantages of the conventional peak-rectifying circuit. Using the proposed rectifier, the high power factor and low harmonic currents are obtained in the AC line. Furthermore, several advantages such as the high power density and wide output voltage range can be available. Through the simulation and experimental results, the usefulness of the proposed rectifier is verified.

• Proceedings of the KIPE Conference
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• 2005.07a
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• pp.295-297
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• 2005

This paper presents a novel current driving method for the synchronous rectifier (SR) in a Flyback topology. The proposed current driven synchronous rectifier features low Power loss, good performance and the gate voltage of FET in the synchronous rectifier is easily controlled by zener voltage. The proposed SR driving method is implemented in a 200W Flyback converter with 400Vdc input and achieved excellent performance at full load.

• Proceedings of the KIEE Conference
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• 2005.10c
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• pp.89-91
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• 2005

In This paper the convertor topology using single diode bridge rectifier for the now two-phase switched reluctance motor is proposed. The single diode bridge rectifier is supplied by the Ac voltage source. The nonlinear model of two-phase SRM is implement by maxwell and result show the photographic.

• Proceedings of the KIEE Conference
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• 2005.07b
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• pp.1395-1397
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• 2005

This paper presents a novel current driving method for the synchronous rectifier(SR) in a flyback topology. The proposed current driven synchronous rectifier features low power loss, good performance and the gate voltage of FET in the synchronous rectifier is easily controlled by resistor ratio. The proposed SR driving method is implemented in a 200W Flyback converter with 400Vdc input and achieved excellent performance at full load.

• Journal of the Institute of Electronics Engineers of Korea SD
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• v.45 no.6
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• pp.10-15
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• 2008

In this paper, a new NMOS gate cross-connected current-mirror type bridge rectifier for UHF RFID applications is presented. The DC converting characteristics of the proposed rectifier are analyzed with the high frequency equivalent circuit and the gate capacitance reduction technique for reducing the gate leakage current due to the increasing of operating frequency is also proposed theoretically by circuitry method. As the results, the proposed rectifier shows nearly same DC output voltages as the existing NMOS gate cross-connected rectifier, but it shows the gate leakage current reduced to less than 1/4 and the power consumption reduced more than 30% at the load resistor, and it shows more stable DC supply voltages for the valiance of load resistance. In addition, the proposed rectifier shows high enough and well-rectified DC voltages for the frequency range of 13.56MHz HF(for ISO 18000-3), 915MHz UHF(for ISO 18000-6), and 2.45 GHz microwave(for ISO 18000-4). Therefore, the proposed rectifier can be used as a general purpose one to drive RFID transponder chips on various RFID systems which use specified frequencies.

• Journal of Power Electronics
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• v.16 no.3
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• pp.1226-1235
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• 2016

For wearable health monitoring systems, a fundamental problem is the limited space for storing energy, which can be translated into a short operational life. In this paper, a highly efficient active voltage doubling rectifier with a wide input range for micro-piezoelectric energy harvesting systems is proposed. To obtain a higher output voltage, the Dickson charge pump topology is chosen in this design. By replacing the passive diodes with unbalanced-biased comparator-controlled active counterparts, the proposed rectifier minimizes the voltage losses along the conduction path and solves the reverse leakage problem caused by conventional comparator-controlled active diodes. To improve the rectifier input voltage sensitivity and decrease the minimum operational input voltage, two low power common-gate comparators are introduced in the proposed design. To keep the comparator from oscillating, a positive feedback loop formed by the capacitor C is added to it. Based on the SMIC 0.18-μm standard CMOS process, the proposed rectifier is simulated and implemented. The area of the whole chip is 0.91×0.97 mm², while the rectifier core occupies only 13% of this area. The measured results show that the proposed rectifier can operate properly with input amplitudes ranging from 0.2 to 1.0V and with frequencies ranging from 20 to 3000 Hz. The proposed rectifier can achieve a 92.5% power conversion efficiency (PCE) with input amplitudes equal to 0.6 V at 200 Hz. The voltage conversion efficiency (VCE) is around 93% for input amplitudes greater than 0.3 V and load resistances larger than 20kΩ.

• Journal of IKEEE
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• v.21 no.1
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• pp.73-76
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• 2017

SiC devices have drawn much attentions for its wide band gap material properties. Especially 4H-SiC Schottky barrier diode is widely used for its rapid switching speed and low forward voltage drop. However, the low reliability of Schottky barrier diode has many problems that Super Barrier Rectifier(SBR) was researched for alternative. makes 4H-SiC trench-type accumulation super barrier rectifier(TASBR) is analyzed and proposed in this paper. We could verified that forward voltage drop was improved 21.06% without severe degradation of reverse breakdown voltage and leakage current based on the results from 2-D numerical simulations. With this novel rectifier structure, we can expect application with less power loss.

• Journal of information and communication convergence engineering
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• v.1 no.3
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• pp.163-168
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• 2003

This paper presents a cascade multilevel PWM rectifier without the isolation transformers for energy build-up at each inverter modules. The features and advantages of the proposed PWM rectifier can be summarized as follows; I) It realizes the high power high voltage AC/DC power conversion, 2) It uses no transformer which is bulky and heavy, 3) It has hybrid structure so that switching devices can be effectively utilized, 4) It produces high quality AC current even in high power high voltage applications, 5) The input power factor remains unity by simple modulation index control. The multilevel rectifier is analyzed by using the circuit DQ transformation whereby the characteristics and control equations are obtained. Finally, it will be shown that the system simulation reveals the validity of analyses.

• Journal of Power Electronics
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• v.6 no.4
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• pp.356-365
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• 2006

This paper presents an improved three-phase PFC power rectifier with a three-phase diode rectifier cascaded four-switch boost converter. Its operating principle contains the operating principle of two conventional three-phase PFC power rectifiers: one switch boost converter type and a two switch boost converter type. The operating characteristics of the four switch boost converter type three-phase PFC power rectifier are evaluated from a practical point of view, being compared with one switch boost converter type and two switch boost converter topologies.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.28 no.6
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• pp.371-374
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• 2015

This paper suggests a high performance lateral super barrier rectifier (Lateral SBR) device which has the advantages of both Schottky diode and pn junction, that is, low forward voltage and low leakage current, respectively. Advantage of the proposed lateral SBR is that it can be easily implemented and integrated in current BCD platform. As a result of simulation using TCAD, BVdss = 48 V, $V_F=0.38V$ @ $I_F=35mA$, T_j = $150^{\circ}C$ were obtained with very low leakage current characteristic of 3.25 uA.