• 생명과학회지
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• 제14권4호
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• pp.577-581
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• 2004

Azo계 염색 폐수 처리에 활용되었던 활성 슬러지의 미생물 군집체로부터 diazo계 반응성 염료인 Reactive Black 5를 유일 탄소원으로 성장할 수 있는 Comamonas sp. AEBL-85를 분리ㆍ동정하고, Comamonas sp. AEBL-85를 이용한 Reactive Slacks에 대한 회분식 탈색 특성을 평가하였다. 염료탈색 반응 효율 향상을 위해 보조 탄소원 및 질소원 첨가하고, pH, 온도 등의 분해조건이 탈색율에 미치는 영향을 분석한 결과, 3% (w/v)의 포도당, 0.5% (w/v)의 yeast extract를 첨가한 MSM에서 pH 6.0, 온도 35$^{\circ}C$의 조건에서 탈색효율이 가장 높았다. 초기농도 50 mg/l의 Reactive Black 5에 대하여 40시간의 회분식 탈색반응을 통해 약 95% 이상의 탈색율을 얻을 수 있었다.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2015년도 제49회 하계 정기학술대회 초록집
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• pp.56.2-56.2
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• 2015

Nonthermal Atmospheric Pressure Plasmas and their Applications to Plasma Bioscience and Medicines have been introduced for next generation human healthcare's quantum developments. Various kinds of nonthermal atmospheric pressure plasmas have been introduced and their electron temperature and plasma densities along with reactive oxygen and nitrogen species have been diagnosed and analyzed for biological cell interactions, especially, used in Plasma Bioscience Research Center (PBRC), Korea. Herein, we have also introduced the plasma-initiated ultraviolet photolysis, which might be a generation mechanism for the reactive oxygen and nitrogen species (RONS) intracellular and extracellular regions inside the liquid when the plasma has been bombarded onto the water. Finally we have investigated the interactions of these RONS with the various cancer cells resulting in apoptotic cell death.

• 한국고분자학회:학술대회논문집
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• 한국고분자학회 2006년도 IUPAC International Symposium on Advanced Polymers for Emerging Technologies
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• pp.369-369
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• 2006

Compatibilizers contribute to many processes in polymer industry, such as manufacturing polymer blends and composites. They are usually designed to be block or graft form which is combined in polar and non-polar parts in the first synthesis process level, for example, the general form of maleic anhydride (MA) as a compatiblizer is a grafted counterpart. However, the process of making the compatibilizer is related to the first synthesis level and it has some problems, such as high cost, poor processability, limitation on use and properties, and so on. So, in order to improve its poor processability and overcome the limitation on use, we developed compatibilizers which have various chemical forms by high intensity ultrasound and super critical fluid nitrogen in polymer melt reactive extrusion.

• 한국표면공학회지
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• 제29권5호
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• pp.498-504
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• 1996

The synthesis of carbon nitride thin films with high nitrgen concentration was accomplished by reactive supttering at relatively high working pressure. In conventional reactive sputter-deposition of carbon nitride films, working pressure was 0.3-5Pa and the ratio of nitrogen to carbon(N/C ratio) in the films was less than 0.5. In this study, amorphous carbon nitride films with the N/C ratio $\tickapprox$ 1.0 were prepared on Si(100). substrates at higher pressure, 20-60 Pa. Structural analyses with Fourier transform infrared spectroscopy and X-ray photoelectron spectroscopy revealed that the films prepared consisted of triazine-like plain network.

• Transactions on Electrical and Electronic Materials
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• 제9권1호
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• pp.12-15
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• 2008

Hafnium oxynitride films have been deposited onto a silicon substrate by means of radio frequency (RF) reactive sputtering using a hafnium dioxide $(HfO_2)$ target with a variety of nitrogen! argon $(N_2/Ar)$ gas flow ratios. Auger electron spectroscopy (AES)results confirm that $N_2$ was successfully incorporated into the HfON films. An increase in the $N_2/Ar$ gas flow ratio resulted in metal oxynitride formation. The films prepared with a $N_2/Ar$ flow ratio of 20/20 sccm show (222), (530), and (611) directions of $HfO_2N_2$, and the (-111), (311) directions of $HfO_2$. From X-ray reflectometry measurements, it can be concluded that with $N_2$ incorporated into the HfON films, the film density increases. The density increases from 9.8 to $10.1g/cm^3$. XRR also reveals that the surface roughness is related to the $N_2/Ar$ flow ratio.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2014년도 제46회 동계 정기학술대회 초록집
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• pp.173.2-173.2
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• 2014

Thin nitride thin films were synthesized by reactive radio-frequency magnetron sputtering in the ultra high vacuum (UHV) chamber. To control the characteristics of thin films, tin nitride thin films were obtained various argon and nitrogen gas mixtures, especially low nitrogen gas ratios. Tin nitride thin films were analyzed with alpha step, scanning electron microscopy (SEM), X-ray diffraction (XRD), X-ray photoelectron spectroscopy (XPS), and 4 point probe measurement. The result of alpha step and SEM showed that the thickness of thin nitride thin films were decreased with increasing nitrogen gas ratios. The metallic tin structure was decreased and the amorphous tin nitride structure were observed by XRD with higher nitrogen gas ratios. The oxidation state of tin and nitride were studied with high resolution Sn 3d and N 1s XP spectra.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2007년도 하계학술대회 논문집 Vol.8
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• pp.283-283
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• 2007

Titanium nitride thin films were deposited on $SiO_2$/Si substrate by rf-reactive magnetron sputtering. The structural and electrical properties of the films were investigated with various $N_2/(Ar+N_2)$ flow ratios (nitrogen/argon flow ratio). The resistivity as well as temperature coefficient of resistance (TCR) of the films strongly depends on phase structure. For the films deposited at nitrogen/argon flow ratio of below 5%, the resistivity increased with increasing nitrogen/argon flow ratios. However, the resistivity of the film deposited at nitrogen/argon flow ratio of 7% decreased drastically; it is even smaller than that of metal titanium nitride. A near-zero TCR value of approximately 9 ppm/K was observed for films deposited at nitrogen/argon flow ratio of 3%.

• 한국표면공학회지
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• 제34권2호
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• pp.89-96
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• 2001

N- or O-doped STS304 stainless films were synthesized by an unbalanced magnetron sputtering process with various argon and reactive gas ($N_2$, $O_2$) mixtures. These films were examined by scanning electron microscopy (SEM), X-ray diffraction (XRD), Auger electron spectroscopy (AES) and Knoop microhardness tester. The Results from X-ray diffraction (XRD) analysis showed that a STS304 stainless steel film synthesized without reactive gas using a bulk STS304 stainless steel target had a ferrite bcc structure ($\alpha$ phase), while the N-doped STS304 stainless film was consisted of a nitrogen supersaturated fcc structure, which hsa a strong ${\gamma}$(200) phase. In the O-doped films, oxide Phases ($Fe_2$$O_3$ and $Cr_2$$O_3$) were observed from the films synthesized under an excess $O_2$ flow rate of 9sccm. AES analysis showed that nitrogen content in N-doped films increased as the nitrogen flow rate increased. Approximately 43 at.%N in the N-doped film was measured using a nitrogen flow rate of 8sccm. In O-doped film, approximately 15 at.%O was detected using a $O_2$ flow rate of 12sccm. the Knoop microhardness value of N-doped film using a nitrogen flow rate of 8 sccm was measured to be approximately $H_{ k}$ 1200 and this high value could be attributed to the fine grain size and increased residual stress in the N-doped film.

• 한국초전도ㆍ저온공학회논문지
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• 제23권2호
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• pp.1-5
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• 2021

We have investigated the electrical transport properties of polycrystalline tantalum nitride (TaN_x) films. Various compositions of tantalum (nitride) thin films have been deposited on SiO₂ substrates by reactive DC magnetron sputtering while changing the ratio of nitrogen partial pressure. The substrate temperature was maintained at 283 K during deposition. X-ray diffraction analyses indicated the presence of α-Ta and β-Ta phases in the Ta film deposited in pure argon atmosphere, while fcc-TaN_x phases appeared in the sputtering gas mixture of argon and nitrogen. The N/Ta atomic ratio in the film increased ranging from 0.36 to 1.07 for nitrogen partial pressure from 7 to 20.7%. The superconducting transition temperatures of the TaN_x thin films were measured to be greater than 3.86 K with a maximum of 5.34 K. The electrical resistivity of TaN_x thin film was in the range of 177-577 𝜇Ωcm and increased with an increase in nitrogen content. The upper critical filed at zero temperature for a TaN_0.87 thin film was estimated to exceed 11.3 T, while it showed the lowest T_c = 3.86 K among the measured superconducting TaN_x thin films. We try to explain the behavior of the increase of the residual resistivity and the upper critical field for TaN_x thin films with the nitrogen content by using the combined role of the intergrain Coulomb effect and disorder effect by grain boundaries.

• KSBB Journal
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• 제19권3호
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• pp.200-205
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• 2004

반월공단의 염색폐수와 염료폐수를 균원시료로 하여 반응성 염료의 색도제거능이 나타난 13종의 균주를 분리하고, 산소농도에 따른 영향을 살펴보기 위하여 교반에 따른 색도제거율을 살펴 본 결과, 교반을 진행하지 않은 경우 효율이 더 높은 효율을 얻을 수 있었다. 또한, 5가지 반응성 염료 (reactive blue 19, reactive blue 21, reactive red 180, reactive red 195, reactive yellow 145)를 가지고 색도제거 실험을 진행한 결과 2종의 균주가 높은 효율을 보였다. 이 2종의 균주를 동정한 결과 Bacillus anthracis와 Bacillus cereus로 판명되었다. 최적 조건을 살펴보기 위하여 온도와 초기 pH 영향에 따른 색도 제거율을 알아보기 위하여 실험을 진행한 결과 35$^{\circ}C$, pH 7에서 높은 색도제거율을 보였다. 또한 탄소원과 질소원에 따른 영향을 살펴보기 위하여 Bacillus anthracis로 실험한 결과 glucose, yeast extract를 사용한 경우 89%의 높은 색도 제거율을 얻을 수 있었다. 이러한 결과로 미루어 볼 때 분리된 두 균주는 염색폐수의 색도제거에 효과적인 균주라고 사료된다.