• Journal of Magnetics
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• 제12권2호
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• pp.81-83
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• 2007

Etching of NiFe films covered with an organic photo-resist or Ti was successfully performed by an inductively coupled plasma-reactive ion etching (ICP-RIE) system using $CHF_3/O_2/NH_3$ discharges exchanging $CHF_3$ for $CH_4$ gas gradually. Experimental results showed that the organic photo-resist mask can be applied to the NiFe etching. In the case of the Ti metal mask, it was found that the etching-selectivity Ti against NiFe was significantly varied from 7.3 to ${\sim}0$ by changing $CHF_3/CH_4/O_2/NH_3$ to $CH_4/O_2/NH_3$ discharges used in the ICP-RIE system. These results show that the present RIE of NiFe was dominated by a chemical reaction rather than a physical sputtering.

• 한국결정성장학회지
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• 제14권6호
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• pp.236-243
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• 2004

The oxide etching process was characterized in a magnetically enhanced reactive ion etching (MERIE) reactor with a $CHF_3CF_4$ gas chemistry. A statistical experimental design plus one center point was used to characterize relationships between process factors and etch response. The etch response modeled are etch rate, etch selectivity to TiN and uniformity. Etching uniformity was improved with increasing $CF_4$ flow ratio, increasing source power, and increasing pressure depending on source power. Characterization of via etching in $CHF_3CF_4$ MERIE using neural networks was successfully executed giving to highly valuable information about etching mechanism and optimum etching condition. It was found that etching uniformity was closely related to surface polymerization, DC bias, TiN and uniformity.

• 항공우주시스템공학회지
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• 제1권2호
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• pp.37-42
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• 2007

This paper proposes a numerical modeling approach to simulate the hybrid combustion phenomena. From the physical understandings of hybrid combustion, the computational domain was separated into three regions: the solid fuel, gas phase reactive flow, and the interface between solid and fluid. Moreover, for the accurate calculation, computational grids for these regions was generated at every time step considering the instantaneous moving interface which are governed by the balance equations using thermal pyrolysis. In the domain of reactive flow, by virtue of diffusion flame structure, turbulent combustion modeling was introduced using either mixture fraction approach or mean reaction rate approach.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2015년도 제49회 하계 정기학술대회 초록집
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• pp.155.1-155.1
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• 2015

Nowadays, Plasma has been used in biological, medical such as wound healing, plant grow, killing cancer. When plasma generated, UV light and ROS(Reactive oxygen species), RNS(Reactive nitrogen species) can generated and those things effect to biological material. So we made simple plasma device using needle type of electrode and generated plasma. We used three kinds of gas and measured applied voltage and current. Also we observed optical emission spectrum. Using deuterium ramp, we can observed absorption spectrum and calculated radical density by lambert-beer's law. It is around ~1016cm3. And we can see the time-resolved absorption spectrum from monochromator, PMT(photo multiply tube), IV-converter, oscilloscope.

• 대한기계학회:학술대회논문집
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• 대한기계학회 2001년도 춘계학술대회논문집E
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• pp.169-174
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• 2001

This paper reports on the development of high aspect ratio structure and 3-D integrated process for MEMS-based micro gas turbines. To manufacture high aspect ratio structures, Deep Reactive Ion Etching (DRIE) process have been developed and optimized. Specially, in this study, structures with aspect ratios greater than 10 were fabricated. Also, wafer direct bonding and Infra-Red (IR) camera bonding inspection systems have been developed. Moreover, using glass/silicon wafer direct bonding, we optimized the 3-D integrated process.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2002년도 춘계학술대회 논문집 센서 박막재료 반도체재료 기술교육
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• pp.82-85
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• 2002

In recent years, the tantalum nitride(TaN) thin-film has been developed for the electronic resistor and capacitor. In this papers, this study presents the surface profile and sheet-resistance property relationship of reactive-sputtered TaN thin film resistor processed by buffer of Ti and Cr on alumina substrate. The TCR properties of the TaN films were discussed in terms of reactive gas ratio, ratio of nitrogen, crystallization and thin films surface morphology due to annealing temperature. It is clear that the TaN thin-films resistor electrical properties are low TCR related with it's buffer layer condition. Ti buffer layer thin film resistor having a good thermal stability and lower TCR properties then Cr buffer expected for the application to the dielectric material of passive component.

• 대한기계학회:학술대회논문집
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• 대한기계학회 2004년도 추계학술대회
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• pp.1604-1610
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• 2004

A steady dilute premixed combustion at transonic speeds in a diverging channel is investigated. The model explores the nonlinear interactions between the near-sonic speed of the flow, the small changes in geometry from a straight channel, and the small heat release due to the one-step first-order Arrhenius chemical reaction. The reactive flow can be described by a nonhomogeneous transonic small-disturbance (TSD) equation coupled with an ordinary differencial equation for the calculation of the reactant mass fraction in the combustible gas. The asymptotic analysis results in the similarity parameters that govern the reacting flow problem. The model is used to study transonic combustion at various amounts of incoming, reactant mass, reaction rates, and channel geometries.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 1997년도 춘계학술대회 논문집
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• pp.62-65
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• 1997

Indium nitride thin films were deposited on Si(100) substrates by reactive sputtering method. The metallic indium target was sputtered by nitrogen gas with rf sputtering equipment. The surface morphology and cross-section of the InN thin films were investigated by scanning electron microscopy. The crystal orientations were investigated by X-ray diffraction and the Hall effect were measured with van der Pauw method. The indium nitride thin film showed high Hall mobility(215$\textrm{cm}^2$/V-sec) at 5mTorr total pressure and rf power 60W.

• 한국반도체및디스플레이장비학회:학술대회논문집
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• 한국반도체및디스플레이장비학회 2006년도 추계학술대회 발표 논문집
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• pp.198-201
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• 2006

In this paper, we fabricated drag force type and pressure difference type gas flow sensor with dry etching technology which used Deep RIE(reactive ion etching) and etching stop technology which used SOI(silicon-on-insulator). we fabricated four kinds of sensor, which are cantilever, paddle type, diaphragm, and diaphragm with orifice type. Both cantilever and paddle type flow sensors have similar sensitivity as 0.03mV/V kPa. Sensitivity of the fabricated diaphragm and diaphragm with orifice type sensor were relatively high as about 3.5mV/V kPa, 1.5mV/V kPa respectively.

• 한국세라믹학회지
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• 제36권9호
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• pp.946-953
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• 1999

The etching characteristics of Er-doped sodium borosilicate glass film for the planar optical waveguides were investigated using reactive ion etching. The etch rate decreased as the pressure in creased but increased as the RF power increased. The etch rate increased as the flow rate C2F gas and the amount of O2 addition increased but decreased over critical point (C2F6 7,5 accm O2 20%) The etch rate was 180${\AA}$/min under C2F6 7.5 sccm O2 20% RF power 270 W, pressure 150 mTorr. With this optimum etching condition and subsequent heat treatment at 975$^{\circ}C$ for 30 minutes planar optical waveguides having improved sidewall roughness were fabricated successfully.