• Korean Chemical Engineering Research
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• v.57 no.2
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• pp.232-238
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• 2019

Polyethylenimine-crosslinked chitin (PEI-chitin) was developed as a biosorbent to effectively remove dyestuffs from dye-containing wastewater. A representative reactive dye, Reactive Orange 16 (RO16) was used as a model dye. The effect of pH, isotherm, kinetic and desorption experiments were performed to evaluate the adsorption/desorption ability of PEI-chitin for RO16. As a result, the maximum adsorption capacity calculated by the Langmuir model was 266.3 mg/g at pH 2, and the time needed for adsorption equilibrium was evaluated to be about 20, 60, and 240 min for 50, 100, and 200 mg/L, respectively. The desorption experiments were carried out using various eluents such as ammonia/ethanol mixture, NaOH, $NaHCO_3$, and $Na_2CO_3$, and the highest desorption rate was 75.24% in the ammonia/ethanol mixture.

• Proceedings of the Korean Society of Soil and Groundwater Environment Conference
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• 2002.04a
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• pp.114-117
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• 2002

Sorption and desorption studies were conducted to evaluate several media as a potential biobarrier for the remediation of groundwater contaminated with hydrophobic organic compounds (HOCs). Pahokee and Bion peats, Devonian Ohio shale, vermicompost, and 50% HDTMA-montmorillonite were used as model sorbents. Sorption and desorption isotherms were determined using the radiolabeled phenanthrene (Phe). Sorption capacity of Phe on several sorbents was in the order Ohio shale > 50% HDTMA-montmorillonite > vermicompost > Pahokee peat. Mineralization kinetics was investigated for Phe-sorbed sorbents using Pseudomonas putida 17484. Among the tested sorbents, active biodegradation of Phe was observed in shale and vermicompost: degradation in shale exhibited little lag time while that in shale showed a significant lag time. Results of this study indicate that sorbents used in this work can be utilized as permeable reactive biobarrier media for the remediation of HOC-contaminated groundwater.

• Proceedings of the Korean Vacuum Society Conference
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• 2010.02a
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• pp.360-360
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• 2010

Very initial stage of oxidation process of Si (001) surface was investigated using large scale molecular dynamics simulation. Reactive force field potential was used for the simulation owing to its ability to handle charge variation associated with the oxidation reaction. To know the detail mechanism of both adsorption and desorption of water molecule (for simulating wet oxidation), oxygen molecule (for dry oxidation) and their atom constituents, interaction of one molecule with Si surface was carefully observed. The simulation is then continued with many water and oxygen molecules to understand the kinetics of oxide growth. The results show that possibilities of desorption and adsorption depend strongly on initial atomic configuration as well as temperature. We observed a tendency that H atoms come relatively into deeper surface or otherwise quickly desorbed away from the silicon surface. On the other hand, most oxygen atoms are bonded with first layer of silicon surface. We also noticed that charge transfer is only occur in nearest neighbor regime which has been pointed out by DFT calculation. Atomic structure of the interface between the oxide and Si substrate was characterized in atomic scale.

• Applied Science and Convergence Technology
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• v.23 no.4
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• pp.169-178
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• 2014

Fluid model based numerical analysis is done to simulate a low damage etch back system for 20 nm scale semiconductor fabrication. Etch back should be done conformally with very high material selectivity. One possible mechanism is three steps: reactive radical generation, adsorption and thermal desorption. In this study, plasma generation and transport steps are analyzed by a commercial plasma modeling software package, CFD-ACE+. Ar + $CF_4$ ICP was used as a model and the effect of reactive gas inlet position was investigated in 2D and 3D. At 200~300 mTorr of gas pressure, separated gas inlet scheme is analyzed to work well and generated higher density of F and $F_2$ radicals in the lower chamber region while suppressing ions reach to the wafer by a double layer conducting barrier.

• Bulletin of the Korean Chemical Society
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• v.23 no.2
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• pp.205-214
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• 2002

The reaction of gas-phase atomic hydrogen with hydrogen atoms chemisorbed on a silicon surface is studied by use of the classical trajectory approach. Especially, we have focused on the mechanism changes with the hydrogen surface coverage difference. On the sparsely covered surface, the gas atom interacts with the preadsorbed hydrogen atom and adjacent bare surface sites. In this case, it is shown that the chemisorption of H(g) is of major importance. Nearly all of the chemisorption events accompany the desorption of H(ad), i.e., adisplacement reaction. Although much less important than the displacement reaction, the formation of $H_2(g)$ is the second most significant reaction pathway. At gas temperature of 1800 K and surface temperature of 300 K, the probabilities of these two reactions are 0.750 and 0.065, respectively. The adsorption of H(g) without dissociating H(ad) is found to be negligible. In the reaction pathway forming $H_2$, most of the reaction energy is carried by $H_2(g)$. Although the majority of $H_2(g)$ molecules are produced in sub-picosecond, direct-mode collisions, there is a small amount of $H_2(g)$ produced in multiple impact collisions, which is characteristic of complex-mode collisions. On the fully covered surface, it has been shown that the formation of $H_2(g)$ is of major importance. All reactive events occur on a subpicosecond scale, following the Eley-Rideal mechanism. At gas temperature of 1800 K and surface temperature of 300 K, the probability of the $H_2(g)$ formation reaction is 0.082. In this case, neither the gas atom trapping nor the displacement reaction has been found.

• Korean Chemical Engineering Research
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• v.43 no.4
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• pp.542-547
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• 2005

Biosorption is considered to be a promising alternative to replace or supplement the present methods for the treatment of dye-containing wastewater. In this study, the protonated biomass of Corynebacterium glutamicum was evaluated for its potential to remove two types of reactive dyes (Reactive Red 4, Reactive Blue 4) from aqueous solution. The uptakes of dyes were enhanced with decrease in the solution pH, which was likely because the biomass functional groups increased at acidic pH and the positively charged sites could bind the negatively charged sulfonate group ($dye-SO_3^-$) of dye molecules. An equilibrium state was practically achieved in 10 hr. The Langmuir sorption model was used for the mathematical description of the sorption equilibrium. The maximum sorption capacities of C. glutamicum biomass for Reactive Red 4 and Reactive Blue 4 were estimated to 112.36 mg/g and 263.16 mg/g at pH 1, and 71.94 mg/g and 155.88 mg/g at pH 3.

• Proceedings of the Korean Vacuum Society Conference
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• 2013.02a
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• pp.268-268
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• 2013

Water molecules on a Ru(0001) surface are anomalously acidic compared to bulk water. The observation was made by conducting reactive ion scattering, reflection absorption infrared spectroscopy, and temperature-programmed desorption measurements for the adsorption of ammonia onto a water layer formed on Ru(0001). The study shows that the water molecules in the first intact $H_2O$ bilayer spontaneously release a proton to NH3 adsorbates to produce $NH_4{^+}$. However, such proton transfer does not occur for $H_2O$, OH, and H in a mixed adsorption layer or for $H_2O$ in a thick ice film surface.

• Journal of Sensor Science and Technology
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• v.14 no.5
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• pp.343-349
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• 2005

Carbon nitride films were deposited on various substrates for humidity sensors with meshed electrode by reactive RF magnetron sputtering system. As the ratio of injected nitrogen was decreased, the sensitivity of sensor was increased. When the ratio of injected nitrogen was $50{\sim}70%$, the sample showed the best linearity. The sensor impedance changed from $95.4{\;}k{\Omega}$ to $2.1{\;}k{\Omega}$ in a relative humidity range of 5 % to 95 %. The humidity sensors based on silicon wafer revealed higher lineality and faster response than those of alumina or quartz substrates. The adsorption saturation time of the sample was about 80 sec, and its desorption time was about 90 sec.

• Proceedings of the Korean Vacuum Society Conference
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• 2013.02a
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• pp.263-263
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• 2013

This work examines the dynamic properties of ice surfaces in vacuum for the temperature range of 140~180 K, which extends over the onset temperatures for ice sublimation and the phase transition from amorphous to crystallization ice. In particular, the study focuses on the transport processes of excess protons and chloride ions in ice and their segregative behavior to the ice surface. These phenomena were studied by conducting experiments with a relatively thick (~100 BL) ice film constructed with a bottom $H_2O$ layer and an upper $D_2O$ layer, with excess hydronium and chloride ions trapped at the $H_2O$/$D_2O$ interface as they were generated by the ionization of hydrogen chloride. The migration of protons, chloride ions, and water molecules to the ice film surface and their H/D exchange reactions were measured as a function of temperature using the methods of low energy sputtering (LES) and Cs+ reactive ion scattering (RIS). Temperature programmed desorption (TPD) experiments monitored the desorption of water and hydrogen chloride from the surface. Our observations indicated that both hydronium and chloride ions migrated from the interfacial layer to segregate to the surface at high temperature. Hydrogen chloride gas desorbs via recombination reaction of hydronium and chloride ions floating on the surface. Surface segregation of these species is driven by thermodynamic potential gradient present near the ice surface, whereas in the bulk, their transport is facilitated by thermal diffusion process. The finding suggests that chlorine activation reactions of hydrogen chloride for polar stratospheric ice particles occur at the surface of ice within a depth of at most a few molecular layers, rather than in the bulk phase.

• Journal of the Korean institute of surface engineering
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• v.34 no.5
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• pp.516-521
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• 2001

Dry etching of Si wafer and $SiO_2$ layers was performed using He/Cl$_2$ mixture plasma by diode-type reactive ion etcher (RIE) system. For Si etching, the Cl molecules react with the Si molecules on the surface and become chemically stable, indicating that the reactants need energetic ion bombardment. During the ion assisted desorption, energetic ions would damage the photoresist (PR) and produce the bad etch Si-profile. Moreover, we have examined the characteristics of the Cl-Si reaction system, and developed the new fabrication procedures with a $Cl_2$/He mixture for Si and $SiO_2$-etching. The developed novel fabrication procedure allows the RIE to be unexpensive and useful a Si deep etching system. Since the etch rate was proved to increase linearly with fHe and the selectivity of Si to $SiO_2$ etch rate was observed to be inversely proportional to fHe.