• 제목/요약/키워드: Reactive Force

검색결과 208건 처리시간 0.03초

ENHANCEMENT OF BOBSLEIGH SIMULATION REACTIVE FORCE

  • Ogino, Masatoshi;Taki, Tsuyoshi;Miyazaki, Shinya;Hasegawa, Junichi
    • 한국방송∙미디어공학회:학술대회논문집
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    • 한국방송공학회 2009년도 IWAIT
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    • pp.803-807
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    • 2009
  • The bobsleigh is a winter sport which use a sled to slide down an ice-covered course. There is a big expectation for having a training environment and being able to train year round. At present, training is very limited due to the season or course facilities. A variety of VR (Virtual Reality) equipment has been developed in recent years, and it is beginning to spread. We have also made our contribution in bobsleigh simulation. The reactive force applied in our bobsleigh simulation is much smaller than that of a real bobsleigh. This paper proposes a method to enhance reactive force of bobsleigh simulation in real time. The reactive force is magnified instantly in the physically-based simulation. The Laplacian filter is applied to the sequence of reactive force, this technique is often used in the field of image processing. The simulation is comprised of four large scale surround screens and a 6-D.O.F. (Degree Of Freedom) motion system. We also conducted an experiment with several motion patterns to evaluate the effectiveness of enhancement. The experimental results proved useful in some cases.

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Reactive Current Assignment and Control for DFIG Based Wind Turbines during Grid Voltage Sag and Swell Conditions

  • Xu, Hailiang;Ma, Xiaojun;Sun, Dan
    • Journal of Power Electronics
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    • 제15권1호
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    • pp.235-245
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    • 2015
  • This paper proposes a reactive current assignment and control strategy for a doubly-fed induction generator (DFIG) based wind-turbine generation system under generic grid voltage sag or swell conditions. The system's active and reactive power constrains during grid faults are investigated with both the grid- and rotor-side convertors (GSC and RSC) maximum ampere limits considered. To meet the latest grid codes, especially the low- and high-voltage ride-through (LVRT and HVRT) requirements, an adaptive reactive current control scheme is investigated. In addition, a torque-oscillation suppression technique is designed to reduce the mechanism stress on turbine systems caused by intensive voltage variations. Simulation and experiment studies demonstrate the feasibility and effectiveness of the proposed control scheme to enhance the fault ride-through (FRT) capability of DFIG-based wind turbines during violent changes in grid voltage.

Reactive Synthesis of ZrB2-based Ultra High Temperature Ceramics

  • Liu, Hai-Tao;Zhang, Guo-Jun
    • 한국세라믹학회지
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    • 제49권4호
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    • pp.308-317
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    • 2012
  • Reactive processing, such as reactive hot pressing (RHP) and reactive spark plasma sintering (R-SPS), is effective densification method to prepare $ZrB_2$-based ultra high temperature ceramics (UHTCs). The present paper reviewed some typical reactive processing of $ZrB_2$-based UHTCs. All the reactions from the starting materials in the reactive processing are thermodynamically favorable, which generate enough energy and driving force for the densification of the final products under a relatively low temperature. Besides, compared with non-reactive processing, anisotropic $ZrB_2$ grains, such as $ZrB_2$ platelets, can only be obtained in the reactive processing, resulting in an improvement of the mechanical properties.

방향족 고리를 가지는 아크릴계 비이온 반응성 유화제 합성 및 이를 이용한 수성 점착제 물성 연구 (Synthesis of Acrylic Nonionic Reactive Emulsifier with Aromatic Ring and the Properties of Water-based Acryl Pressure Sensitive Adhesive)

  • 염도영;김동환;황가은;황도훈;정유진
    • 접착 및 계면
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    • 제22권2호
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    • pp.31-38
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    • 2021
  • 본 연구에서는 polyoxyethylene(10) dodecylphenyl ether와 3-butenoic acid를 사용하여 방향족을 포함한 아크릴계 비이온 반응성 유화제를 합성하였으며, 합성된 비이온 반응성 유화제는 1H-NMR과 FT-IR로 구조를 확인하였다. 수성 아크릴 베이스 에멀젼의 제조에서 합성된 방향족을 포함한 비이온 반응성 유화제와 방향족을 포함하지 않은 비이온 반응성 유화제 및 음이온 유화제를 사용하여 고형분, 전환율, 입도분포, 박리강도와 내열유지력의 물성을 확인하였다. 입도분포의 경우 370~698 nm 범위에서 측정되었으며, 박리강도는 평균 1.507~1.802 kgf/in범위에서 측정되었다. 제조된 베이스 에멀젼의 내열유지력은 0.50~2.00 mm 범위에서 측정되었으며, 특히 합성된 방향족을 포함한 비이온 반응성 유화제를 사용한 경우, 방향족을 포함하지 않는 비이온 반응성 유화제를 사용한 경우보다 내열 유지력이 가장 뛰어남을 확인하였으며, 수성 아크릴 점착제로 유용하게 사용될 수 있을 것으로 판단된다.

Chemical Mechanical Polishing 공정에 관한 원자단위 반응 모델링 (Atomic Scale Modeling of Chemical Mechanical Polishing Process)

  • 변기량;강정원;송기오;황호정
    • 한국전기전자재료학회논문지
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    • 제18권5호
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    • pp.414-422
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    • 2005
  • This paper shows the results of atomistic modeling for the Interaction between spherical nano abrasive and substrate In chemical mechanical polishing processes. Atomistic modeling was achieved from 2-dimensional molecular dynamics simulations using the Lennard-jones 12-6 potentials. We proposed and investigated three mechanical models: (1) Constant Force Model; (2) Constant Depth Model, (3) Variable Force Model, and three chemical models, such as (1) Chemically Reactive Surface Model, (2) Chemically Passivating Surface Model, and (3) Chemically Passivating-reactive Surface Model. From the results obtained from classical molecular dynamics simulations for these models, we concluded that atomistic chemical mechanical polishing model based on both Variable Force Model and Chemically Passivating-reactive Surface Model were the most suitable for realistic simulation of chemical mechanical polishing in the atomic scale. The proposed model can be extended to investigate the 3-dimensional chemical mechanical polishing processes in the atomic scale.

활성화 반응으로 제작된 TiO2의 박막특성 (Film Properties of TiO2 Made by Activated Reactive Evaporation)

  • 박용근;최재하
    • 열처리공학회지
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    • 제14권3호
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    • pp.151-154
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    • 2001
  • $TiO_2$ thin film has wide application because of its high capacitanca, reflection, and good transmissivity in visible range. $TiO_2$ thin film can be made by thermal deposition method, reactive evaporation method, activated reactive evaporation(ARE) method. In the case of thermal deposition, the oxygen deficiency can occur because the melting point of Ti is very high. While in the case of reactive evaporation, high density $TiO_2$ can not be made, because reactive gas($O_2$) and evaporated material(Ti) are not fully combined, activated reactive evaporation, $TiO_2$ is easily deposited at lower gas pressure compared with reactive evaporation because the ionized reactive gas is made by plasma. Therefore, activated reactive evaporation is very useful to deposit the material having the high melting point. In this work, we formed $TiO_2$ thin film by activated reactive evaporation method. The surface of $TiO_2$ thin film was analyzed by X-ray photoelectron spectroscopy. The surface morphology which was analyzed by atomic force microscopy(AFM) shows that feature of the film surface is uniform. The dielectric capacitance, withstanding voltage were $600{\mu}F/cm^2$, 0.4V respectively. In further work, we can increase the withstanding voltage by improving the deposition parameter of substrates.

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Hydrogen Generation by Electrical Discharge through Metal/Water System

  • G. J. Kang;S. Y. Cha;Lee, W. M.;Park, Y. M.
    • 한국에너지공학회:학술대회논문집
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    • 한국에너지공학회 1996년도 춘계학술발표회 초록집
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    • pp.111-114
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    • 1996
  • Hydrogen generation by dissociation of water is described. The major force for the dissociation comes from the oxidation potential of the reactive metal reacting with water whereas the minor role is played by electrical discharge which helps sustain the reaction. A premixed reactive metal/water system undergoes a fast hydrogen generation upon the ignition by an electrical pulse. In another method the reactive metal can be fed into the discharge. Some characteristics of the methods are discussed.

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유도결합형 플라즈마를 사용한 반응성 마그네트론 스퍼터링에 의한 ZnO 박막 증착 및 특성분석 (Characterization and deposition of ZnO thin films by Reactive Magnetron Sputtering using Inductively-Coupled Plasma (ICP))

  • 김동선
    • 반도체디스플레이기술학회지
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    • 제10권2호
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    • pp.83-89
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    • 2011
  • In this study, we investigated the effects of shutter control by Reactive Magnetron Sputtering using Inductively-Coupled Plasma(ICP) for obtaining ZnO thin films with high purity. The surface morphologies and structure of deposited ZnO thin films were characterized using Scanning Electron Microscopy (SEM), Atomic Force Microscopy (AFM) and X-ray Diffractometer (XRD). Also, optical and chemical properties of ZnO thin films were analyzed by Spectroscopic Ellipsometer (SE) and X-ray Photoelectron spectroscopy (XPS). As a result, it observed that ZnO thin films grown at reactive sputtering using shutter control and ICP were higher density, lower surface roughness, better crystallinity than other conventional sputtering deposition methods. For obtaining better quality deposition ZnO thin films, we will investigate the effects of substrate temperature and RF power on shutter control by a reactive magnetron sputtering using inductively-coupled plasma.

Atomistic Investigation of Lithiation Behaviors in Silicon Nanowires: Reactive Molecular Dynamics Simulation

  • 정현;주재용;조준형;이광렬;한상수
    • 한국진공학회:학술대회논문집
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    • 한국진공학회 2014년도 제46회 동계 정기학술대회 초록집
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    • pp.160.2-160.2
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    • 2014
  • Recently silicon has attracted intense interest as a promising anode material of lithium-ion batteries due to its extremely high capacity of 4200 mA/g (for Li4.2Si) that is much higher than 372 mAh/g (for LiC6) of graphite. However, it seriously suffers from large volume change (even up to 300%) of the electrode upon lithiation, leading to its pulverization or mechanical failure during lithiation/delithiation processes and the rapid capacity fading. To overcome this problem, Si nanowires have been considered. Use of such Si nanowires provides their facile relaxation during lithiation/delithiation without mechanical breaking. To design better Si electrodes, a study to unveil atomic-scale mechanisms involving the volume expansion and the phase transformation upon lithiation is critical. In order to investigate the lithiation mechanism in Si nanowires, we have developed a reactive force field (ReaxFF) for Si-Li systems based on density functional theory calculations. The ReaxFF method provides a highly transferable simulation method for atomistic scale simulation on chemical reactions at the nanosecond and nanometer scale. Molecular dynamics (MD) simulations with the ReaxFF reproduces well experimental anisotropic volume expansion of Si nanowires during lithiation and diffusion behaviors of lithium atoms, indicating that it would be definitely helpful to investigate lithiation mechanism of Si electrodes and then design new Si electrodes.

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Reactive molecular dynamics study of very initial dry oxidation of Si(001)

  • Pamungkas, Mauludi Ariesto;Joe, Minwoong;Kim, Byung-Hyun;Kim, Gyu-Bong;Lee, Kwang-Ryeol
    • 한국진공학회:학술대회논문집
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    • 한국진공학회 2011년도 제40회 동계학술대회 초록집
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    • pp.325-325
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    • 2011
  • Very initial stage of oxidation process of Si (001) surface at room temperature (300 K) and high temperature (1200 K) was investigated using large scale molecular dynamics simulation. Reactive force field potential [1] was used for the simulation owing to its ability to handle charge variation as well as breaking and forming of bonds associated with the oxidation reaction. The results show that oxygen molecules adsorb dissociatively or otherwise leave the silicon surface. Initial position and orientation of oxygen molecule above the surface play important role in determining final state and time needed to dissociate. At 300 K, continuous transformation of ion $Si^+$ (or suboxide Si2O) to $Si2^+$ (SiO), $Si3^+$ (Si2O3) and finally to $Si4^+$ (SiO2) clearly observed. High temperature silicon surface provide heat energy that enable oxygen atom to penetrate into deeper silicon surface. The heat energy also retards adsorption process. As a result, transformation of ion $Si^+$ is impeded at 1200 K.

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