• 제목/요약/키워드: Reaction layer

검색결과 1,554건 처리시간 0.035초

Epitaxial Growth of Polyurea Film by Molecular Layer Deposition

  • 최성은;강은지;이진석
    • 한국진공학회:학술대회논문집
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    • 한국진공학회 2013년도 제45회 하계 정기학술대회 초록집
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    • pp.264.2-264.2
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    • 2013
  • Molecular layer deposition (MLD) is sequential, self-limiting surface reaction to form conformal and ultrathin polymer film. This technique generally uses bifunctional precursors for stepwise sequential surface reaction and entirely organic polymer films. Also, in comparison with solution-based technique, because MLD is vapor-phase deposition based on ALD, it allows epitaxial growth of molecular layer on substrate and is especially good for surface reaction or coating of nanostructure such as nanopore, nanochannel, nanwire array and so on. In this study, polyurea film that consisted of phenylenediisocyanate and phenylenediamine was formed by MLD technique. In situ Fourier Transform Infrared (FTIR) measurement on high surface area SiO2 substrate was used to monitor the growth of polyurethane and polyurea film. Also, to investigate orientation of chemical bonding formed polymer film, plan-polarized grazing angle FTIR spectroscopy was used and it showed epitaxial growth and uniform orientation of chemical bones of polyurea films.

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다층 기공구조를 갖는 다공성 반응소결 탄화규소 다공체 제조 (Fabrication of Porous Reaction Bonded Silicon Carbide with Multi-Layered Pore Structures)

  • 조경선;김규미;박상환
    • 한국세라믹학회지
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    • 제46권5호
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    • pp.534-539
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    • 2009
  • Reaction Bonded Silicon Carbide(RBSC) has been used for engineering ceramics due to low-temperature fabrication and near-net shape products with excellent structural properties such as thermal shock resistance, corrosion resistance and mechanical strength. Recently, attempts have been made to develop hot gas filter with gradient pore structure by RBSC to overcome weakness of commercial clay-bonded SiC filter such as low fracture toughness and low reliability. In this study a fabrication process of porous RBSC with multi-layer pore structure with gradient pore size was developed. The support layer of the RBSC with multi-layer pore structure was fabricated by conventional Si infiltration process. The intermediate and filter layers consisted of phenolic resin and fine SiC powder were prepared by dip-coating of the support RBSC in slurry of SiC and phenol resin. The temperature of $1550^{\circ}C$ to make Si left in RBSC support layer infiltrate into dip-coated layer to produce SiC by reacting with pyro-carbon from phenol resin.

동-스테인리스 강 브레이징 접합부의 계면조직과 접합강도에 관한 연구(ll) (A Study on Bonding Strength and Interfacial Structure of Copper-Stainless Steel Brazed Joint(ll))

  • 이우천;강춘식;정재필;이보영
    • 한국재료학회지
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    • 제3권6호
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    • pp.668-677
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    • 1993
  • Cu-P계, 4종의 Cu-P-Pn계 및 3종의 Cu-P-Sn-Ag계 용가재를 사용해 Ar분위기 하에서 1003 및 1033K로 1.2Ks동안 노브레이징한 ST304, STS430 및 저탄소강과 동 접합체들을 전단시험 및 조직시험하였다. 계면에서의 미세조직은 제 종류 즉 첫째,균열을 포함하는 반응층 둘째, 분산층 세째, 균열을 포함하는 반응층과 분산층으로 분류된다. 분산층만이 존재할때 40-60MPa 이상의 상대적으로 높은 전단강도가 얻어지며, 동모재파단을 일으킨다. 이 반응층이 형성되었을때는 반드시 균열이 형성되며, 낮은 전단강도를 나타내고 접합부파단을일으킨다. 이 반응층은 Fe-P계의 화합물이다. 이러한 미소조직 및 강도 경향은 용가재내 Sn의 존재 및 모재내 Ni(또한 Cr)의 존재 유무에 따라 변화한다.

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3층 Cu/Al/Cu 클래드재의 열처리온도에 따른 변형 및 파단거동 (Effect of Heat Treatment on the Deformation and Fracture Behaviors of 3-ply Cu/Al/Cu Clad Metal)

  • 김인규;하종수;홍순익
    • 대한금속재료학회지
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    • 제50권12호
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    • pp.939-948
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    • 2012
  • A 3-ply clad metal consisting of aluminum and copper was fabricated by roll bonding process and the microstructures and mechanical properties of the roll-bonded and post-roll-bonding heat treated Cu/Al/Cu clad metal were investigated. A brittle interfacial reaction layer formed at the Cu/Al interfaces at and above $400^{\circ}C$. The thickness of the reaction layer increased from $12{\mu}m$ at $400^{\circ}C$ to $28{\mu}m$ at $500^{\circ}C$. The stress-strain curves demonstrated that the strength decreased and the ductility increased with heat treatment up to $400^{\circ}C$. The clad metal heat treated at $300^{\circ}C$ with no indication of a reaction layer exhibited an excellent combination of the strength and ductility and no delamination of layers up to final fracture in the tensile testing. Above $400^{\circ}C$, the ductility decreased rasxpidly with little change of strength, reflecting the brittle nature of the intermetallic interlayers. In Cu/Al/Cu clad heat treated above $400^{\circ}C$, periodic parallel cracks perpendicular to the stress axis were observed at the interfacial reaction layer. In-situ optical microscopic observation revealed that cracks were formed in the Cu layer due to the strain concentration in the vicinity of horizontal cracks in the intermetallic layer, promoting the premature fracture of Cu layer. Vertical cracks parallel to the stress axis were also formed at 15% strain at $500^{\circ}C$, leading to the delamination of the Cu and Al layers.

산화붕소의 소듐아미드로부터 육방정 질화붕소의 합성 (Preparation of Hexagonal Boron Nitride from Boron Oxide and Sodium Amide)

  • 손영국;장윤식;오기동
    • 한국세라믹학회지
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    • 제27권7호
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    • pp.869-876
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    • 1990
  • Hexagonal boron nitride was synthesized from boron oxide and sodium amide in ammonia gas stream. The reaction mechanisms and characteristics of as synthesized boron nitride was investigated by means of TG, DTA, IR, XRD, SEM and PSA. The results are ; 1) hexagonal boron nitride was synthesized from reactions at temperatures above 40$0^{\circ}C$ 2) Sodium metaborate was present as by-product after reaction so that the reaction mechanism is reduced as follows : 2B2O3+3NaNH2longrightarrowBN+3NaBO2+2NH3. 3) boron nitride obtained at the reaction temperature below 40$0^{\circ}C$ is found to have random layer strudcture but the structure transits to ordered layer structure rapidly with increasing reaction temperature, showing separation of (101) differaction line from (10)band in XRD pattern of the reaction product at 50$0^{\circ}C$.

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화학적으로 증착된 CdS 박막의 반응온도에 따른 물성 (Effect of Reaction Temperature on Properties of CdS Thin Films Prepared by Chemical Bath Deposition)

  • 송우창
    • 한국표면공학회지
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    • 제38권3호
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    • pp.112-117
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    • 2005
  • In this paper, CdS thin films, which were widely used as a window layer of the CdS/CdTe and the $CdS/CuInSe_2$heterojunction solar cell, were grown by chemical bath deposition, and the structural, optical and electrical properties of the films on reaction temperatures were investigated. Cadmium acetate and thiourea were used as cadmium and sulfur source, respectively. And Ammonium acetate was used as the buffer solution. As the reaction temperatures were increased, the deposition rate of CdS fllms prepared by CBD was increased and the grain size was large due to increasing reaction rate in solution, also optical transmittance of the films in visible lights was increased on rising reaction temperatures.

대구경 말뚝의 정재하시험시 대구경 경사반력말뚝의 인발거동 (The Pullout Behavior of a Large-diameter Batter ]Reaction Piles During Static Pile Load Test for a Large Diameter Socketed Pipe Pile)

  • 김상옥;성인출;박성철;정창규;최용규
    • 한국지반공학회논문집
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    • 제18권1호
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    • pp.5-16
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    • 2002
  • 본 연구에서는 직경 1,000mm의 시험말뚝에 대한 압축정재하시험 수행시 반력말뚝으로 사용된 직경 2,500mm의 대구경 경사반력소켓말뚝의 인발거동을 분석하였다. 경사반력말뚝은 풍화암층과 연암층 10m에 걸쳐서 현장타설말뚝으로 소켓되어졌으며, 강관부는 강관과 속채움콘크리트로, 그리고 소켓부는 콘크리트와 철근으로 구성되었다. 각 구성부재에 작용하는 변형율을 측정하기 위해 센서를 설치하였으며, 반력말뚝두부의 인발량을 측정하기 위하여 LVDT를 설치하였다. 정재하시험중 재하된 최대인발하중은 10MN이었으며 최대인발변위는 7m, 잔류인발변위는 최대 1mm 정도 발생하였다. 인발하중의 83%를 풍화암층에서 그리고 12%를 연암층에서 지지하는 것으로 나타났으며 풍화암에 소켓된 철근콘크리트부와 연암에 소켓된 털근콘크리트부에서 각각 125.3kPa와 61.8kPa의 인발응력이 발생하였다. 따라서, 풍화암층에서도 인발하중을 충분하게 지지하고 있으므로 풍화암층은 마찰력을 크게 발휘하는 지지층으로 사용되었다.

은(Ag)계 활성금속을 사용한 질화 알미늄(AlN)과 Cu의 브레이징 (Brazing of Aluminium Nitride(AlN) to Copper with Ag-based Active Filler Metals)

  • 허대;김대훈;천병선
    • Journal of Welding and Joining
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    • 제13권3호
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    • pp.134-146
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    • 1995
  • Aluminium nitride(AlN) is currently under investigation as potential candidate for replacing alumium oxide(Al$_{2}$ $O_{3}$) as a substrate material for for electronic circuit packaging. Brazing of aluminium nitride(AlN) to Cu with Ag base active alloy containing Ti has been investigated in vacuum. Binary Ag$_{98}$ $Ti_{2}$(AT) and ternary At-1wt.%Al(ATA), AT-1wt.%Ni(ATN), AT-1wt.% Mn(ATM) alloys showed good wettability to AlN and led to the development of strong bond between brate alloy and AlN ceramic. The reaction between AlN and the melted brazing alloys resulted in the formation of continuous TiN layers at the AlN side iterface. This reaction layer was found to increase by increase by increasing brazing time and temperature for all filler metals. The bond strength, measured by 4-point bend test, was increased with bonding temperature and showed maximum value and then decreased with temperature. It might be concluded that optimum thickness of the reaction layer was existed for maximum bond strength. The joint brazed at 900.deg.C for 1800sec using binary AT alloy fractured at the maximum load of 35kgf which is the highest value measured in this work. The failure of this joint was initiated at the interface between AlN and TiN layer and then proceeded alternately through the interior of the reaction layer and AlN ceramic itself.

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다양한 온도에서 염소가스 반응에 의해 표면 개질된 SiC의 트라이볼로지 특성평가 (Estimation of Tribological Properties on Surface Modified SiC by Chlorine Gas Reaction at Various Temperatures)

  • 배흥택;정지훈;최현주;임대순
    • 한국세라믹학회지
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    • 제46권5호
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    • pp.515-519
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    • 2009
  • Carbon layers were fabricated on silicon carbide by chlorination reaction at temperatures between $1000^{\circ}C$ and $1500^{\circ}C$ with $Cl_2/H_2$ gas mixtures. The effect of reaction temperature on the micro-structures and tribological behavior of SiC derived carbon layer was investigated. Tribological tests were carried out ball-on-disk type wear tester. Carbon layers were characterized by X-ray diffractometer, Raman spectroscopy and surface profilometer. Both friction coefficients and wear rates were maintained low values at reaction temperature up to $1300^{\circ}C$ but increased suddenly above this temperature. Variation of surface roughness as a function of reaction temperature was dominant factor affecting tribological transition behavior of carbon layer derived from silicon carbide at high temperature.

Ag-Cu-Ti Brazing 금속을 이용한 Inconel/$Si_3N_4$ 접합의 계면구조 (Interfacial Structure of Inconel/$Si_3N_4$ Joint Using Ag-Cu-Ti Brazing Metal)

  • 정창주;장복기;문종하;강경인
    • 한국세라믹학회지
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    • 제33권12호
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    • pp.1421-1425
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    • 1996
  • Sintered Si3N4 and Inconel composed of Ni(58-63%) Cr(21-25%) Al(1-17%) Mn(<1%) fe(balance) were pressurelessly joined by using Ag-Cu-Ti brazing filler metal at 950℃ and 1200℃ under N2 gas atmosphere of 1atm and their interfacial structures were investigated. In case that the reaction temperature was low as 950℃ its interfacial structure was "Inconel metal/Ti-rich phase layer/brazing filler metal layer/Si3N4 " Ti used as reactive metal existed in between inconel steel and brazing metal and moved to the interface of between brazing filler metal nd Si3N4 according as reaction temperature increased up to 1200℃. The interfacial structure of inconel steel-Si3N4 reacted at 1200℃ was ' inconel metal/Ni-rich phase layer containing of Fe. Cr and Si/Cu-rich phase layer containing of Mn and Si/Si3N4 " Cr Mn, Ni and Fe diffused to the interface of between brazing filler metal and Si3N4 and reacted with Si3N4 The most reactive components of ingredients of inconel metal were Cr and Mn. On the other hand Ti added as reactive components to Ag-Cu eutectic segregated into Ni-rich phase layer,.

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