• 제목/요약/키워드: Reaction layer

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산화막과 금속박막 계면에서의 adhesion 개선을 위한 열처리 (Annealing for Improving adhesion between Metal layer and Oxide layer)

  • 김응수
    • 대한전자공학회:학술대회논문집
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    • 대한전자공학회 2002년도 하계종합학술대회 논문집(2)
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    • pp.225-228
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    • 2002
  • The adhesion effect between the oxide layer and the metal layer has been studied by RTP anneal. Two types of oxides, BPSG and P-TEOS, were used as a bottom layer under multi-layered metal film. We observe the interface between oxide and metal layer using SEM (scanning electron microscopy), TEM (transmission electron microscopy), AES (auger electron spectroscopy). Adhesion failure was occurred by interfacial reaction between the BPSG oxide and the multi-layered metal film at 650"C RTP anneal. The phosphorus rich layer was observed at interface between BPSG oxide and metal layer by AES and TEM measurements. On the other hand adhesion was a)ways good in the sample used P-TEOS oxide as a bottom layer. We have known that adhesion between BPSG and multi-layered metal film was improved when the sample was annealed below $650^{\circ}C$.TEX>.

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DEVELOPMENT OF SN BASED MULTI COMPONENT SOLDER BALLS WITH CD CORE FOR BGA PACKAGE

  • Sakatani, Shigeaki;Kohara, Yasuhiro;Uenishi, Keisuke;Kobayashi, Kojiro F.;Yamamoto, Masaharu
    • 대한용접접합학회:학술대회논문집
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    • 대한용접접합학회 2002년도 Proceedings of the International Welding/Joining Conference-Korea
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    • pp.450-455
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    • 2002
  • Cu-cored Sn-Ag solder balls were fabricated by coating pure Sn and Ag on Cu balls. The melting behavior and the solderability of the BGA joint with the Ni/Au coated Cu pad were investigated and were compared with those of the commercial Sn-Ag and Sn-Ag-Cu balls. DSC analyses clarified the melting of Cu-cored solders to start at a rather low temperature, the eutectic temperature of Sn-Ag-Cu. It was ascribed to the diffusion of Cu and Ag into Sn plating during the heating process. After reflow soldering the microstructures of the solder and of the interfacial layer between the solder and the Cu pad were analyzed with SEM and EPMA. By EDX analysis, formation of a eutectic microstructure composing of $\beta$-Sn, Ag$_3$Sn, ad Cu$_{6}$Sn$_{5}$ phases was confirmed in the solder, and the η'-(Au, Co, Cu, Ni)$_{6}$Sn$_{5}$ reaction layer was found to form at the interface between the solder and the Cu pad. By conducting shear tests, it was found that the BGA joint using Cu-cored solder ball could prevent the degradation of joint strength during aging at 423K because of the slower growth me of η'-(Au, Co, Cu, Ni)$_{6}$Sn$_{5}$ reaction layer formed at the solder, pad interface. Furthermore, Cu-cored multi-component Sn-Ag-Bi balls were fabricated by sequentially coating the binary Sn-Ag and Sn-Bi solders on Cu balls. The reflow property of these solder balls was investigated. Melting of these solder balls was clarified to start at the almost same temperature as that of Sn-2Ag-0.75Cu-3Bi solder. A microstructure composing of (Sn), Ag$_3$Sn, Bi and Cu$_{6}$Sn$_{5}$ phases was found to form in the solder ball, and a reaction layer containing primarily η'-(Au, Co, Cu, Ni)$_{6}$Sn$_{5}$ was found at the interface with Ni/Au coated Cu pad after reflow soldering. By conducting shear test, it was found that the BGA joints using this Cu-core solder balls hardly degraded their joint shear strength during aging at 423K due to the slower growth rate of the η'-(Au, Cu, Ni)$_{6}$Sn$_{5}$ reaction layer at the solder/pad interface.he solder/pad interface.

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EPMA를 이용한 U3Si/Al 조사 핵연료의 반응층 분석 (EPMA Analysis of Inter-reaction Layer in Irradiated U3Si-Al Fuels)

  • 정양홍;유병옥;김희문;박종만;김명한
    • 분석과학
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    • 제17권4호
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    • pp.355-362
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    • 2004
  • 하나로 원자로에서 조사된 최대 선출력이 121 kW/m이고, 63 at%의 평균 연소도를 갖는 $U_3Si-Al$ 원심 분무 고출력 핵연료를 EPMA를 이용하여 파단면 관찰 및 반응층에 대한 핵분열 생성물을 분석 하였다. 조사된 고출력 $U_3Si-Al$ 핵연료를 EPMA로 화학 조성을 분석하기 위해 선행조건은 방사능 허용 한도가 $3{\times}10^{10}Bq$ 이하로 제한되는 EPMA 기기에 부합 될 수 있게 시험 시편을 최소화 하기 위한 작업이다. 시험 조건에 부합될 수 있는 시편의 제조를 위해 핵연료 천공 장치를 제작하였으며, 천공 장치를 사용하여 ${\Phi}1.57{\times}2mm$의 크기를 갖는 시료를 만들었다. 천공 된 시료를 파단 시편과 연마 시편으로 제조하여 파단면의 관찰 및 반응층(Inter-reaction layer)과 산화층에 대한 EPMA 분석을 수행하였다. 두께가 $16{\mu}m$인 반응층에 대한 평균값은 $UO_2$를 표준 시편으로 calibration한 경우의 조성은 $U_{2.84}$ Si $Al_{14}$ 이였으며, 시험 시편으로 calibration한 경우의 조성은 $U_{3.24}$ Si $Al_{14.1}$ 였다. 또한 반응층에서 핵분열 생성물의 조성을 분석하였으며, 반응층에서의 금속 석출물(metallic precipitates)의 생성은 확인할 수 없었다. 시험 시편의 산화층 조성은 $Ai_2O_3$ 임을 확인했다.

Investigation on HT-AlN Nucleation Layers and AlGaN Epifilms Inserting LT-AlN Nucleation Layer on C-Plane Sapphire Substrate

  • Wang, Dang-Hui;Xu, Tian-Han
    • Journal of the Optical Society of Korea
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    • 제20권1호
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    • pp.125-129
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    • 2016
  • In this study, we have investigated a high-temperature AlN nucleation layer and AlGaN epilayers on c-plane sapphire substrate by low-pressure metal-organic chemical vapor deposition (LP-MOCVD). High resolution X-ray diffraction (HRXRD), atomic force microscopy (AFM), scanning electron microscope (SEM) and Raman scattering measurements have been exploited to study the crystal quality, surface morphology, and residual strain of the HT-AlN nucleation layer. These analyses reveal that the insertion of an LT-AlN nucleation layer can improve the crystal quality, smooth the surface morphology of the HT-AlN nucleation layer and further reduce the threading dislocation density of AlGaN epifilms. The mechanism of inserting an LT-AlN nucleation layer to enhance the optical properties of HT-AlN nucleation layer and AlGaN epifilm are discussed from the viewpoint of driving force of reaction in this paper.

Synthesis of Conjugated Copolymers with phenothiazine and Azomethine Units and their Electro-Optic Properties

  • Seo, Hyeon-Jin;Jang, Byeung-Jo;Chang, Jin-Gyu;Park, Lee-Soon
    • Journal of Information Display
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    • 제2권4호
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    • pp.8-14
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    • 2001
  • Three types of conjugated polymers, poly(PZ-Pi), poly(PZ-BPI) and poly(PZ-NPI) were synthesized by Schiff-base reaction. These new conjugated polymers exhibited improved solubility in common organic solvents due to the presence of alkyl side chains as well as azomethine groups, Double layer LEDs made with the synthesized polymers as emitting layer and $Alq_3$, as electron transporting layer exhibited enhanced EL emission and efficiency compared to those of single layer LEDs. Double layer LEDs exhibited gradual shift in the emission peak th the single layer LED, made of only $Alq_3$ as the emitting layer as the thickness of $Alq_3$ layer increased.

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고온자전합성과 확산 열처리를 이용한 V 이 첨가된 TiAl계 금속간화합물 복합판재의 제조 (Formation of a V-Added Ti Aluminide Multilayered Sheet by Self-Propagating High-Temperature Synthesis and Diffusion Annealing)

  • 김연욱
    • 한국재료학회지
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    • 제12권9호
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    • pp.696-700
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    • 2002
  • The Ti-aluminide intermetallic compound was formed from high purity elemental Ti and Al foils by self-propagating, high-temperature synthesis(SHS) in hot press. formation of $TiAl_3$ at the interface between Ti and Al foils was controlled by temperature, pressure, heating rate, and so on. According to the thermal analysis, it is known in this study that the heating rate is the most important factor to form the intermetallic compound by this SHS reaction. The V layer addition between Al and Ti foils increased SHS reaction temperatures. The fully dense, well-boned inter-metallic composite($TiA1/Ti_3$Al) sheets of 700 m thickness were formed by heat treatment at $1000^{\circ}C$ for 10 hours after the SHS reaction of alternatively layered 10 Ti and 9 Al foils with the V coating layer. The phases and microstructures of intermetallic composite sheets were confirmed by EPMA and XRD.

스퍼터링 코팅층을 중간재로 사용한 동(Cu)의 저온 접합(제1보) (Low Temperature Bonding of Copper with Interlayers Coated by Sputtering(Part 1))

  • 김대훈
    • 연구논문집
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    • 통권24호
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    • pp.63-79
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    • 1994
  • This article reports a experimental study of the method to achieve a bond joint at lower temperature in a short time. DC magnetron sputtering of Sn, Sn/Pb, Sn/In and Sn/Cu on copper substrate was provided as an interlayer for Cu to Cu bonding under the air environment. Various examination was conducted and investigated on the effect of experimental parameters such as coating materials, coating time(or coating thickness), bonding temperature and bonding time etc. Bonding was performed at the temperature of $210^\circC-320^\circC$ for 0sec and interfacial reaction between the coated layer and copper substrate was examined using optical, scanning electron microscope and x-ray diffractometer. From the obtained results, it was found that intermetallic compounds layer consisted of $\eta-phase(Cu_6Sn_5)$ and $\beta-phase(Cu_3Sn)$ was formed at the joint interface for almost all coating materials. But the dominant phase formed in the preetched Cu substrate coated with Sn was $\beta-phase$. A characteristic morphology looks like a reaction ring, which was believed as the strong interconnecting regions between two substrates, was found to be formed on the reaction surface of copper substrates. The morphologies and compositions of the intermetallics, which depends on the regions of the reaction surface, was appeared as greatly different. Based on above results, the new bonding process to make the joint at lower temperature for short time can be admitted as a feasible process.

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Correlation between rare earth elements in the chemical interactions of HT9 cladding

  • Lee, Eun Byul;Lee, Byoung Oon;Shim, Woo-Yong;Kim, Jun Hwan
    • Nuclear Engineering and Technology
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    • 제50권6호
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    • pp.915-922
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    • 2018
  • Metallic fuel has been considered for sodium-cooled fast reactors because it can maximize the uranium resources. It generates rare earth elements as fission products, where it is reported by aggravating the fuel-cladding chemical interaction at the operating temperature. Rare earth elements form a multicomponent alloy (Ce-Nd-Pr-La-Sm-etc.) during reactor operation, where it shows a higher reaction thickness than a single element. Experiments have been carried out by simplifying multicomponent alloys for mono or binary systems because complex alloys have difficulty in the analysis. In previous experiments, xCe-yNd was fabricated with two elements, Ce and Nd, which have a major effect on the fuel-cladding chemical interaction, and the thickness of the reaction layer reached maximum when the rare earth elements ratio was 1:1. The objective of this study is to evaluate the effect and relationship of rare earth elements on such synergistic behavior. Single and binary rare earth model alloys were prepared by selecting five rare earth elements (Ce, Nd, Pr, La, and Sm). In the single system, Nd and Pr behaviors were close to diffusion, and Ce showed a eutectic reaction. In the binary system, Ce and Sm further increased the reaction layer, and La showed a non-synergy effect.

Fabrication of Organic-Inorganic Superlattice Films Toward Potential Use For Gas Diffusion Barrier

  • 윤관혁;;성명모
    • 한국진공학회:학술대회논문집
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    • 한국진공학회 2012년도 제43회 하계 정기 학술대회 초록집
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    • pp.394-394
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    • 2012
  • We fabricated organic-inorganic superlattice films using molecular layer deposition (MLD) and atomic layer deposition (ALD). The MLD is a gas phase process in the vacuum like to atomic layer deposition (ALD) and also relies on a self-terminating surface reaction of organic precursor which results in the formation of a monolayer in each sequence. In the MLD process, 'Alucone' is very famous organic thin film fabricated using MLD. Alucone layers were grown by repeated sequential surface reactions of trimethylaluminum and ethylene glycol at substrate temperature of $80^{\circ}C$. In addition, we developed UV-assisted $Al_2O_3$ with gas diffusion barrier property better than typical $Al_2O_3$. The UV light was very effective to obtain defect-free, high quality $Al_2O_3$ thin film which is determined by water vapor transmission rate (WVTR). Ellipsometry analysis showed a self-limiting surface reaction process and linear growth of each organic, inorganic film. Composition of the organic films was confirmed by infrared (IR) spectroscopy. Ultra-violet (UV) spectroscopy was employed to measure transparency of the organic-inorganic superlattice films. WVTR is calculated by Ca test. Organic-inorganic superlattice films using UV-assisted $Al_2O_3$ and alucone have possible use in gas diffusion barrier for OLED.

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