• Nuclear Engineering and Technology
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• v.55 no.2
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• pp.408-420
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• 2023

Beryllium oxide (BeO) is being re-emphasized and utilized in Micro Modular Reactors (MMR) because of its prominent nuclear and high temperature properties in recent years. The implications of the research about effects of neutron irradiation on the microstructure and properties of BeO are significant. This article comprehensively reviews the effects of neutron irradiation on BeO and proposes the maximum permissible neutron doses at different temperatures for BeO without cracks in appearance according to the data in the previous literature. This maximum permissible neutron dose value has important reference significance for the experimental study of BeO. The effects of neutron irradiation on the thermal conductivity and flexural strength of BeO are also discussed. In addition, microstructure evolution of irradiated BeO during post-irradiation annealing is summarized. This review article has important implications for the application of BeO in MMR.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2007.11a
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• pp.126-127
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• 2007

Sn-filled and Fe-doped $CoSb_3$ skutterudites were synthesized by encapsulated induction melting. Single ${\delta}$-phase was successfully obtained by subsequent annealing and confirmed by X-ray diffraction analysis. Temperature dependences of Seebeck coefficient, electrical resistivity and thermal conductivity were examined from 300 K to 700 K. The positive Seebeck coefficient confirmed the p-type conduction. Electrical resistivity increased with increasing temperature, which shows that the $Sn_zCo_3FeSb_{12}$ skutterudite is highly degenerate. Thermal conductivity was reduced by Sn-filling because the filler atoms acted as phonon scattering centers in the skutterudite lattice. Thermoelectric figure of merit was enhanced by Sn filling and its optimum filling content was considered to be z=0.3 in the $Sn_zCo_3FeSb_{12}$ system.

• Proceedings of the Korean Vacuum Society Conference
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• 2008.02a
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• pp.340-340
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• 2008

• Korean Journal of Materials Research
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• v.16 no.9
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• pp.529-532
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• 2006

Sn-filled $Co_8Sb_{24}$ skutterudites were synthesized by the encapsulated induction melting process. Single ${\delta}-phase$ was successfully obtained by subsequent annealing and confirmed by X-ray diffraction analysis. Temperature dependences of Seebeck coefficient, electrical resistivity and thermal conductivity were examined from 300 K to 700 K. The positive Seebeck coefficient confirmed the p-type conductivity of the Sn-filled $Co_8Sb_{24}$. Electrical resistivity increased with increasing temperature, which shows that the Sn-filled $Co_8Sb_{24}$ skutterudite is a highly degenerate semiconductor. Thermal conductivity was reduced by Sn-filling because the filler atoms acted as phonon scattering centers in the skutterudite lattice. Thermoelectric figure of merit was enhanced by Sn filling and its optimum filling content was considered to be $z{\leq}0.5$ in the $Sn_zCo_8Sb_{24}$ system.

• Proceedings of the Korean Powder Metallurgy Institute Conference
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• 2006.09b
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• pp.957-958
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• 2006

Fe doped skutterudite $CoSb_3$ with a nominal composition of $Fe_xCo_{1-x}Sb_{12}(0{\leq}x{\leq}2.5)$ have been synthesized by mechanical alloying (MA) of elemental powders, followed by vacuum hot pressing. Phase transformations during mechanical alloying and vacuum hot pressing were systematically investigated using XRD. Single phase skutterudite was successfully produced by vacuum hot pressing using as-milled powders without subsequent annealing. However, second phase of $FeSb_2$ was found to exist in case of $x\geq2$, suggesting the solubility limit of Fe with Co in this system. Thermoelectric properties as functions of temperature and Fe contents were evaluated for the hot pressed specimens. Fe doping up to x=1.5 with Co in $Fe_xCo_{4-x}Sb_{12}$ appeared to increase thermoelectric figure of merit (ZT) and the maximum ZT was found to be 0.78 at 525K in this study.

• Journal of the Korean Vacuum Society
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• v.11 no.1
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• pp.1-7
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• 2002

We deposited $Ba_{0.5}Sr_{0.5}TiO_3$(BST) thin-films on Pt/Ti/$SiO_2$/Si substrates using RF magnetron sputtering method. A Substrate temperature was fixed at room temperature, while working gas flow ratio and RF Power were changed from 90:10 to 60:40 and 50 W, 75 W respectively. Also after BST thin films were deposited, we performed annealing in oxygen atmosphere using Rapid Thermal Annealing. For capacitor application we deposited Pt using E-beam evaporator of UHV system. In a structural property study through XRD measurement we found that crystallization depends on annealing rather than working gas ratio or and RF Power. Electrical properties showed relatively superior characteristic on the annealed sample with 50 W of RF Power.

• Journal of Life Science
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• v.14 no.1
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• pp.110-114
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• 2004

The optimized RAPD-PCR conditions, that can be utilized as a basic information for analysis of the gelletic characteristics were developed for genetic analysis of four mulberry varieties, named Milsung, Chungil, Suil, and Hansung using a primer, OPY15 (5'-AGTCGCCCTT-3') from Operon company. We tested several different factors for best PCR condition including concentrations of DNA, primer, Mgclu annealing temperature, number of PCR cycle, and prosence/absence of pre-heating time at the begining of PCR reaction in the $25 \mul$volume. The best RAPD profiles were obtained using 50 ng of DNA, 1 $\mu$M of primer, $1 \mum$of $MgCl_2\;,45^{\circ}C$ of annealing temperature and an absence of pre-heating time. An establishment of the stable and reproducible RAPD-PCR conditions are expected to be useful for the subsequent RAPD-related investigation, such as genetic characterization of the mulberry varieties, re-establishment of phylogenetic relationships and development of new varieties.

• Korean Journal of Metals and Materials
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• v.56 no.12
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• pp.845-853
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• 2018

To understand the effect of microstructural factors (i.e., the size of ${\alpha}$ phase, equiaxed vs bimodal structure) on high cycle fatigue (HCF) and fatigue crack propagation (FCP) behaviors of mill-annealed Ti-6Al-4V (Ti64) alloy, three specimens of EQ (equiaxed)-8 (8 indicates the size of ${\alpha}$ grain), BM (bimodal)-8, and BM-16 were studied. The uniaxial HCF and FCP tests were conducted at an R ratio of 0.1 under sinusoidal fatigue loading. The microstructural influence (i.e., EQ vs BM) was not significant on the tensile properties of mill-annealed Ti64 alloy, and showed an increase in tensile strength and elongation with decreasing gauge thickness from 50 mm to 1.3 mm. The microstructure, on the other hand, affected the resistance to HCF substantially. It was found that the EQ structure in mill-annealed Ti64 has better resistance to HCF than the BM structure, as a result of different crack initiation mechanism. Unlike HCF behavior, the effect of microstructural features on the FCP behavior of mill-annealed Ti64 was not significant. Among the three specimens, BM-16 specimen showed the highest near-threshold ΔK value, probably because it had the greatest slip reversibility with large ${\alpha}$ grains. The effect of microstructural factors on the HCF and FCP behaviors of mill-annealed Ti64 alloy are discussed based on fractographic and micrographic observations.

• Korean Journal of Materials Research
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• v.19 no.2
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• pp.61-67
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• 2009

Electrolessly deposited Co (Re,P) was investigated as a possible capping layer for Cu wires. 50 nm Co (Re,P) films were deposited on Cu/Ti-coated silicon wafers which acted as a catalytic seed and an adhesion layer, respectively. To obtain the optimized bath composition, electroless deposition was studied through an electrochemical approach via a linear sweep voltammetry analysis. The results of using this method showed that the best deposition conditions were a $CoSO_4$ concentration of 0.082 mol/l, a solution pH of 9, a $KReO_4$ concentration of 0.0003 mol/l and sodium hypophosphite concentration of 0.1 mol/L at $80^{\circ}C$. The thermal stability of the Co (Re,P) layer as a barrier preventing Cu was evaluated using Auger electron spectroscopy and a Scanning calorimeter. The measurement results showed that Re impurities stabilized the h.c.p. phase up to $550^{\circ}C$ and that the Co (Re,P) film efficiently blocked Cu diffusion under an annealing temperature of $400^{\circ}C$ for 1hr. The good barrier properties that were observed can be explained by the nano-sized grains along with the blocking effect of the impurities at the fast diffusion path of the grain boundaries. The transformation temperature from the amorphous to crystal structure is increased by doping the Re.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2005.11a
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• pp.248-249
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• 2005

The tungsten bronze type of strontium barium niobate(SBN) thin film was synthesized by metal organic decomposion method for SBN stock solution and the SBN thin film process were deposited by spin-coating process on Pt-deposited si-wafer(100) by magnetron sputtering system. The thickness of SBN thin film was 150$\sim$200 nm and were optimized for rpm of spin-coater system. The structural variation of SBN thin film was studied by TG-DTA and XRD. The deposited SBN stock solution on annealing at $400\sim800^{\circ}C$ a pure tungsten bronze SBN phase and the corresponding average grain size about 500$\sim$1000 nm influenced by annealing temperature.