• Journal of Korea Multimedia Society
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• v.22 no.2
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• pp.311-321
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• 2019

Virtual reality applications in Head-Mounted Displays require high frame rates and low latency rendering techniques. Ray tracing offers many benefits, such as high-quality image generation, but has not been utilized due to lower performance than rasterization. But that can obtain good result combined with gaze-tracking technology and human visual system's operation principle. In this paper, we propose a method to optimize the foveated sampling map and to maintain the visual quality through the fast voronoi nearest interpolation. The proposed method further reduces the computational cost that has been improved by the previous foveated sampling. It also smoothes the voronoi boundary using adaptive sibson interpolation, which was not possible in real-time. As a result, the proposed method can render real-time high-quality images with low visual difference.

• Journal of the Korean Society for Heat Treatment
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• v.15 no.2
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• pp.65-69
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• 2002

$Llo{\rightarrow}Ni_5Al_3$ reordering and related properties in Ni-Al alloys consisting of 64-65at%Ni are characterized by X-ray diffraction, shape memory effect and damping capacity. Formation of $Ni_5Al_3$ takes place by simple ordering of atoms with a continuous increase in c/a ratio. As a result, degradation of shape memory effect and damping capacity is observed after short time annealing at $200-300^{\circ}C$.

• Journal of Korea Multimedia Society
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• v.7 no.6
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• pp.781-790
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• 2004

This paper presents a fourth-order cumulants based iterative algorithm for blind channel equalization. It is robust with respect to the existence of heavy Gaussian noise in a channel and does not require the minimum phase characteristic of the channel. In this approach, the transmitted signals at the receiver are over-sampled to ensure the channel described by a full-column rank matrix. It changes a single-input/single-output (SISO) finite-impulse response (FIR) channel to a single-input/multi-output (SIMO) channel. Based on the properties of the fourth-order cumulants of the over-sampled channel outputs, the iterative algorithm is derived to estimate the deconvolution matrix which makes the overall transfer matrix transparent, i.e., it can be reduced to the identity matrix by simple reordering and scaling. Both a closed-form and a stochastic version of the proposed algorithm are tested with three-ray multi-path channels in simulation studies, and their performances are compared with a method based on conventional second-order cumulants. Relatively good results are achieved, even when the transmitted symbols are significantly corrupted with Gaussian noise.

• Korean Journal of Materials Research
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• v.20 no.11
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• pp.606-610
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• 2010

Films consisting of a silicon quantum dot superlattice were fabricated by alternating deposition of silicon rich silicon nitride and $Si_3N_4$ layers using an rf magnetron co-sputtering system. In order to use the silicon quantum dot super lattice structure for third generation multi junction solar cell applications, it is important to control the dot size. Moreover, silicon quantum dots have to be in a regularly spaced array in the dielectric matrix material for in order to allow for effective carrier transport. In this study, therefore, we fabricated silicon quantum dot superlattice films under various conditions and investigated crystallization behavior of the silicon quantum dot super lattice structure. Fourier transform infrared spectroscopy (FTIR) spectra showed an increased intensity of the $840\;cm^{-1}$ peak with increasing annealing temperature due to the increase in the number of Si-N bonds. A more conspicuous characteristic of this process is the increased intensity of the $1100\;cm^{-1}$ peak. This peak was attributed to annealing induced reordering in the films that led to increased Si-$N_4$ bonding. X-ray photoelectron spectroscopy (XPS) analysis showed that peak position was shifted to higher bonding energy as silicon 2p bonding energy changed. This transition is related to the formation of silicon quantum dots. Transmission electron microscopy (TEM) and electron spin resonance (ESR) analysis also confirmed the formation of silicon quantum dots. This study revealed that post annealing at $1100^{\circ}C$ for at least one hour is necessary to precipitate the silicon quantum dots in the $SiN_x$ matrix.