• 제목/요약/키워드: Rate Determining Step

검색결과 232건 처리시간 0.029초

Novel Rate Control Scheme for Low Delay Video Coding of HEVC

  • Wu, Wei;Liu, Jiong;Feng, Lei
    • ETRI Journal
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    • 제38권1호
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    • pp.185-194
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    • 2016
  • In this paper, a novel rate control scheme for low delay video coding of High Efficiency Video Coding (HEVC) is proposed. The proposed scheme is developed by considering a new temporal prediction structure of HEVC. In the proposed scheme, the relationship between bit rate and quantization step is exploited firstly to formulate an accurate quadratic rate-quantization (R-Q) model. Secondly, a method of determining the quantization parameters (QPs) for the first frames within a group of pictures is proposed. Thirdly, an accurate frame-level bit allocation method is proposed for HEVC. Finally, based on the proposed R-Q model and the target bit allocated for the frame, the QPs are predicted for coding tree units by using rate-distortion (R-D) optimization. We compare our scheme against that of three other state-of-the-art rate control schemes. Experimental results show that the proposed rate control scheme can increase the Bjøntegaard delta peak signal-to-noise ratio by 0.65 dB and 0.09 dB on average compared with the JCTVC-I0094 and JCTVC-M0036 schemes, respectively, both of which have been implemented in an HEVC test model encoder; furthermore, the proposed scheme achieves a similar R-D performance to Wang's scheme, as well as obtaining the smallest bit rate mismatch error of all the schemes.

Modeling and assessment of VWNN for signal processing of structural systems

  • Lin, Jeng-Wen;Wu, Tzung-Han
    • Structural Engineering and Mechanics
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    • 제45권1호
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    • pp.53-67
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    • 2013
  • This study aimed to develop a model to accurately predict the acceleration of structural systems during an earthquake. The acceleration and applied force of a structure were measured at current time step and the velocity and displacement were estimated through linear integration. These data were used as input to predict the structural acceleration at next time step. The computation tool used was the Volterra/Wiener neural network (VWNN) which contained the mathematical model to predict the acceleration. For alleviating problems of relatively large-dimensional and nonlinear systems, the VWNN model was utilized as the signal processing tool, including the Taylor series components in the input nodes of the neural network. The number of the intermediate layer nodes in the neural network model, containing the training and simulation stage, was evaluated and optimized. Discussions on the influences of the gradient descent with adaptive learning rate algorithm and the Levenberg-Marquardt algorithm, both for determining the network weights, on prediction errors were provided. During the simulation stage, different earthquake excitations were tested with the optimized settings acquired from the training stage to find out which of the algorithms would result in the smallest error, to determine a proper simulation model.

범용성 유도결합 플라즈마 식각장비를 이용한 깊은 실리콘 식각 (The Development of Deep Silicon Etch Process with Conventional Inductively Coupled Plasma (ICP) Etcher)

  • 조수범;박세근;오범환
    • 한국전기전자재료학회논문지
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    • 제17권7호
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    • pp.701-707
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    • 2004
  • High aspect ratio silicon structure through deep silicon etching process have become indispensable for advanced MEMS applications. In this paper, we present the results of modified Bosch process to obtain anisotropic silicon structure with conventional Inductively Coupled Plasma (ICP) etcher instead of the expensive Bosch process systems. In modified Bosch process, etching step ($SFsub6$) / sidewall passivation ($Csub4Fsub8$) step time is much longer than commercialized Bosch scheme and process transition time is introduced between process steps to improve gas switching and RF power delivery efficiency. To optimize process parameters, etching ($SFsub6$) / sidewall passivation ($Csub4Fsub8$) time and ion energy effects on etching profile was investigated. Etch profile strongly depends on the period of etch / passivation and ion energy. Furthermore, substrate temperature during etching process was found to be an important parameter determining etching profile. Test structures with different pattern size have been etched for the comparison of the aspect ratio dependent etch rate and the formation of silicon grass. At optimized process condition, micropatterns etched with modified Bosch process showed nearly vertical sidewall and no silicon grass formation with etch rate of 1.2 ${\mu}{\textrm}{m}$/ min and the size of scallop of 250 nm.

$Hg^{2+}$ 수용액 내에서 cis-[Co(en)$_2$YCl]$^{r+}$ (Y = $NH_3$, NO$_2^-$, NCS$^-$, $H_2O$)의 아쿠아 반응속도와 반응메카니즘 (Kinetics and Mechanism for Aquation of cis-[Co(en)$_2$YCl]$^{r+}$ (Y = NH$_3^-$, NO$_2$, NCS$^-$, H$_2$O} in Hg$^{2+}$ Aqueous Solution)

  • 박병각;임주상
    • 대한화학회지
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    • 제32권5호
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    • pp.476-482
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    • 1988
  • $Hg^{2+}$ 수용액내에서 cis-[$Co(en)_2YCl$]$^{r+}$ (Y = $NH_3$, $NO_2^-$, NCS$^-$, $H_2O$)의 아쿠아 반응속도를 UV/vis 분광광도계로 측정하여 반응속도식을 결정하였으며, 확장분자궤도법(Extended Huckel Molecular Orbital Method)에 의해 Co(Ⅲ) 전이금속착물의 양자화학적값을 계산하고 실험에서 구한 반응속도와의 상관성을 조사하여 촉매가 관련한 타당한 반응메카니즘을 제안하였다. 본 연구에서 Co(Ⅲ) 전이금속착물과 $Hg^{2+}$에 대하여 각각 1차반응이고, 반응속도는 Co(Ⅲ) 중심금속의 알짜전하 크기와 병행성이 있으며, 이들의 반응속도는 Y의 종류에 따라 $NH_3$ < NCS$^-$ < H$_2$O < NO$_2^-$의 순으로 증가되었다. 그리고 이들 생성물의 cis-이성질체가 약 95${\%}$, trans-이성질체가 약 5${\%}$정도 생성되었다. 또한 EHMO법에 의해 계산된 알짜전하와 결합차수로부터 본 반응계는 결합깨어짐보다 결합형성이 우선되어 H$_2$0가 Co(Ⅲ) 중심금속에 공격하는 단계가 속도결정 단계가 됨을 알았다. 이러한 사실과 실험에서 구한 속도자료 그리고 활성화파라메타값으로부터 Id 메카니즘으로 진행되는 타당한 반응메카니즘을 제안하였다.

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일치환 Bezaldehyde 의 Semicarbazone 생성 반응에 관한 연구 (Studies on the Semicarbazone Formation of Mono substituted Benzaldehydes)

  • 김용인;김창면
    • 한국응용과학기술학회지
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    • 제7권1호
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    • pp.93-105
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    • 1990
  • Semicarbazone formation of nine monosubstituted benzaldehydes was studied kinetically in 20% methanol buffer solution at 15, 25, 35, and $45^{circ}C$. The rate of p-nitrobenzaldehyde semicarbazone formation is 2.7 times as fast as that of benzaldehyde, while p-hvdroxybenzaldehyde is 3.6 times as slow as that of benzaldehyde. Activation energies for p-chlorobenzaldehyde, benzaldehyde, p-methylbenzaldehyde, p-methoxybenzaldshyde, p-hydroxybenzaldehyde, and p-dimethylaminobenzaldehyde semicarbazone formation are calculated as 5.80, 6.19, 6.57, 7.06, 8.03, and 6.46 kcal/mol respectively. It is concluded from the effect of ionic strength that the reaction is affected by not ions but neutral molecules involving hydrogen bonding between oxygen atom of carbonyl group and hydrogen atom of acid-catalyst, and concerted attack of the necleophilic reagent, free base on carbonyl compound. Also, the effect of solvent composition is small in 20% and 50% methanol (and ethanol) aqueous solutions. The ${\rho}-{\sigma}$ plots for the rates of semicarbazone formation at pH 7.1 show a linear ${\rho}-{\sigma}$ relationship (${\rho}=0.14l$, in contrast to that at pH 2.75 and pH 5.4 corresponding to ${\rho}-{\sigma}$ correlations reparted by Jencks. The rate of semicarbazone formation at pH 5.4 show a relationship which is convex upward, resulting in a break in the curve but at pH 2.75, slight difference from a linear relationship. As a result of studying citric acid catalysis, second-order rate constants increase linearly with citric acid concentration and show a 2 times increase as the catalyst concentration is varied from 0.025 to 0.1 mol/1 at pH 2,9, but slight increase at pH 5.3. The rate-determining step is addition below pH 5 but is dehydration between pH 5 and 7. Conclusively, the rate-determining step of the reaction changes from dehydration to addition in respect to hydrogen ion activity near pH 5. The ortho: para rate ratio of the hydroxybenzaldehydes for semicarbazone formation is about 17 at $15^{\circ}C$. It is concluded that the results constitute strong evidence in favor of greater stabilization of p- than o-hydroxybenzaldehyde by substituent which donate electrons by resonance and is due to hydrogen bonding between the carbon-bound hydrogen of the-CHO group and the oxygen atom of the substituent.

사무소 건물의 급수배관경 산정을 위한 동시사용유량에 관한 연구 (The evaluation of the simultaneous flow rate for sizing the water supply piping in the office building)

  • 이용화
    • 설비공학논문집
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    • 제11권4호
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    • pp.511-517
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    • 1999
  • Determining the simultaneous flow rate in any particular section of piping is the important step in order to determine the size of water supply piping. Now we are using the diversity curve of common water closet in order to determine the simultaneous flow rate of water supply piping, but there is a difference between a determined flow rate of general water closet and that of water closet for water saving. This study aims to find out the fixture unit of a flush valve type water closet for water saving in office building, and to determine the correlation between the fixture units and peak flow rates on the basis of the probability theory. A flush valve type water closet for water saving that have a 7.5 second duration of flush operation with an average design flow rate 72 $\ell$/fin was considered. Simulation results indicate that the number 5 is shown to be reasonable to the fixture unit of water closet for water saving. And the design can be undersized considerably with the revised diversity curves using modified fixture unit.

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백금전극(白金電極)에 의한 파라크레졸의 양극전해(陽極電解) 산화특성(酸化特性) (A Study on the Oxidation Characteristics of p-Cresol on Pt Anode)

  • 김홍수;남종우
    • 한국응용과학기술학회지
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    • 제7권2호
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    • pp.47-53
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    • 1990
  • The electrochemical oxidation behavior of p-cresol on platinum anode had been investigated by cyclic voltammetric method for the variation of concentration, scan rate of potential, temperature and pH of electrolyte. The oxidation potential of p-cresol was dependent on the electrolyte until the pH=11.5, but in basic solution over its, it was held at o.40V(vs. SCE). A diffusion was rate determining step of oxidation as irreversible reaction by the transfer atone electron. The current of peak was proportional to concentration of p-cresol until the 0.1N and optimum concentration was found to be about 0.1N. The activation energy was calculated for 5.8kcal/mol from the plot of log $I_l$ vs. 1/T.

Mn(III)-porphyrin에 의한 Styrene 유도체의 산화반응 메카니즘 연구 (Kinetic Investigation of Styrene Derivatives Oxidation Mechanism by Mn(III)-porphyrin)

  • 나훈길
    • 한국응용과학기술학회지
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    • 제19권3호
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    • pp.206-212
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    • 2002
  • The catalytic activities of several metalloporphyrin, wherein the porphyrins are TPP(5,lO,l5,20-Tetraphenyl-21H,23H-porphyrin) and (p-X)TPP (X =$CH_{3}O$, $CH_{3}$, F, Cl), are reported for the oxidation of styrene and it's derivatives. The electronic effects of substrates and porphyrins on the catalytic activity of metalloporphyrin containing the transition metal ion such as Mn(III) was discussed. Investigating the correlation between the Michaelis-Menten's rate parameters and the substituent constants, we are going to analyze the influences on the changes of catalytic activity or rate determining step during the processes of the formation and the dissociation of the M-oxo-olefin.

염료감응 태양전지용 루테늄 금속착체 염료의 이산화티타늄 전극에 대한 동적 흡착 연구 (Adsorption Kinetic Study of Ruthenium Complex Dyes onto TiO2 Anodes for Dye-sensitized Solar Cells (DSSCs))

  • 안병관
    • 한국전기전자재료학회논문지
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    • 제24권11호
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    • pp.929-934
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    • 2011
  • The adsorption kinetic study of ruthenium complex, N3, onto nanoporous titanium dioxide ($TiO_2$) photoanodes has been carried out by measuring dye uptake in-situ. Three simplified kinetic models including a pseudo first-order equation, pseudo second-order equation and intraparticle diffusion equation were chosen to follow the adsorption process. Kinetic parameters, rate constant, equilibrium adsorption capacities and related coefficient coefficients for each kinetic model were calculated and discussed. It was shown that the adsorption kinetics of N3 dye molecules onto porous $TiO_2$ obeys pseudo second-order kinetics with chemisorption being the rate determining step. Additionally the heterogeneous surface and the pore size distribution of porous $TiO_2$ adsorbents were also discussed.