• 제목/요약/키워드: Rapid thermal process

검색결과 452건 처리시간 0.027초

Thermal Transient Characteristics of Die Attach in High Power LED Package

  • Kim Hyun-Ho;Choi Sang-Hyun;Shin Sang-Hyun;Lee Young-Gi;Choi Seok-Moon;Oh Yong-Soo
    • 마이크로전자및패키징학회지
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    • 제12권4호통권37호
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    • pp.331-338
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    • 2005
  • The rapid advances in high power light sources and arrays as encountered in incandescent lamps have induced dramatic increases in die heat flux and power consumption at all levels of high power LED packaging. The lifetime of such devices and device arrays is determined by their temperature and thermal transients controlled by the powering and cooling, because they are usually operated under rough environmental conditions. The reliability of packaged electronics strongly depends on the die attach quality, because any void or a small delamination may cause instant temperature increase in the die, leading sooner or later to failure in the operation. Die attach materials have a key role in the thermal management of high power LED packages by providing the low thermal resistance between the heat generating LED chips and the heat dissipating heat slug. In this paper, thermal transient characteristics of die attach in high power LED package have been studied based on the thermal transient analysis using the evaluation of the structure function of the heat flow path. With high power LED packages fabricated by die attach materials such as Ag paste, solder paste and Au/Sn eutectic bonding, we have demonstrated characteristics such as cross-section analysis, shear test and visual inspection after shear test of die attach and how to detect die attach failures and to measure thermal resistance values of die attach in high power LED package. From the structure function oi the thermal transient characteristics, we could know the result that die attach quality of Au/Sn eutectic bonding presented the thermal resistance of about 3.5K/W. It was much better than those of Ag paste and solder paste presented the thermal resistance of about 11.5${\~}$14.2K/W and 4.4${\~}$4.6K/W, respectively.

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A Novel Solid Phase Epitaxy Emitter for Silicon Solar Cells

  • 김현호;박성은;김영도;지광선;안세원;이헌민;이해석;김동환
    • 한국진공학회:학술대회논문집
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    • 한국진공학회 2014년도 제46회 동계 정기학술대회 초록집
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    • pp.480.1-480.1
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    • 2014
  • In this study, we suggest the new emitter formation applied solid phase epitaxy (SPE) growth process using rapid thermal process (RTP). Preferentially, we describe the SPE growth of intrinsic a-Si thin film through RTP heat treatment by radio-frequency plasma-enhanced chemical vapor deposition (RF-PECVD). Phase transition of intrinsic a-Si thin films were taken place under $600^{\circ}C$ for 5 min annealing condition measured by spectroscopic ellipsometer (SE) applied to effective medium approximation (EMA). We confirmed the SPE growth using high resolution transmission electron microscope (HR-TEM) analysis. Similarly, phase transition of P doped a-Si thin films were arisen $700^{\circ}C$ for 1 min, however, crystallinity is lower than intrinsic a-Si thin films. It is referable to the interference of the dopant. Based on this, we fabricated 16.7% solar cell to apply emitter layer formed SPE growth of P doped a-Si thin films using RTP. We considered that is a relative short process time compare to make the phosphorus emitter such as diffusion using furnace. Also, it is causing process simplification that can be omitted phosphorus silicate glass (PSG) removal and edge isolation process.

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급속압축 장치를 이용한 불균일 예혼합기가 HCCI연소에 미치는 영향에 관한 연구 (An Investigation of HCCI Combustion Processes of Stratified Charge Mixture Using Rapid Compression Machine)

  • 임옥택
    • 한국자동차공학회논문집
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    • 제17권3호
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    • pp.8-14
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    • 2009
  • Effect of heterogeneity of combustion chamber has been thought as one of the way to avoid dramatically generating heat in HCCI Combustion. The purpose of this research is to investigate the effect of heterogeneity, especially thermal stratification and fuel strength stratification on HCCI Combustion fueled with DME and n-Butane. Thermal stratification is formed in Combustion Chamber of Rapid Compression Machine with 3 Kinds of pre-mixture has different properties. The stratified charge mixture is adiabatic compressed and on that process, in cylinder gas pressure and two-dimensional chemiluminescence images are measured and analyzed.

RAPID THERAL PROCESS를 응용한 THIN DIELECTRIC FILM의 전기적 특성에 관한 연구. (ELECTRICAL CHARACTERISTICS OF THIN DIELECTRIC FILMS PREPARED BY RAPID THERMAL PROCESS)

  • 이앙구;박성식;최진석;류지효
    • 대한전기학회:학술대회논문집
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    • 대한전기학회 1987년도 전기.전자공학 학술대회 논문집(I)
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    • pp.542-545
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    • 1987
  • THE ELECTRICAL CHARACTERISTICS Of RAPID THERMAL OXIDES AND NITRIDED OXIDES HAVE BEEN INVESTIGATED. R.T.OXIDE FILMS HAVE BEEN PREPARED BY ONLY R.T. OXIDATION OR R.T.OXIDATION AND SUBSEQUENT R.T.ANNEAL. NITRIDED OXIDE FILMS HAVE BEEN PREPARED BY R.T.OXIDATION AND SUBSEQUENT R.T.NITRIDATION.AND CONVENTIONAL OXIDES ALSO HAVE BEEN PREPARED TO COMPARE WITH R.T.P OXIDES. R.T.ANNEALED OXIDES SHOW EXCELLENT BREAKDOWN FIELD. LEAKAGE CURRENT AND TDDB CHARACTERISTICS. ALSO, CAPACITANCE Of R.T NITRIDED OXIDES ARE SUPERIOR BY 10% TO CONVENTIONAL OXIDES, BUT TDDB CHARACTERISTIC ARE POORER THAN OXIDE FILMS.

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황동 분말의 용융에 의한 레이저 급속 조형법 (Laser Rapid Prototyping by Melting Brass Powder)

  • 최우천;최우영;송대준;이건상
    • 한국레이저가공학회지
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    • 제3권1호
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    • pp.21-28
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    • 2000
  • Selective Laser Sintering (SLS) can produce three-dimensional objects directly from a CAD solid model without part-specific tooling. In this study, a simple rapid prototyping through selective laser sintering on brass powder is investigated using a Nd-YAG laser. Experiments are conducted to produce single lines on a powder-packed bed for various process parameters. Also, temperature distribution in the powder bed and the thickness of a melted line are predicted by finite element analysis. In the numerical analysis, the thermal conductivity of the brass powder which is obtained as a function of state and temperature is used.

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조강형벨라이트 시멘트 적용을 통한 Box-Culvert 의 온도균열 제어 (Thermal Crack Control of Box-Culvert by Using Rapid-Strength Belite Cement)

  • 김태홍;하재담;김동석;이종열;박경래;이주호
    • 한국콘크리트학회:학술대회논문집
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    • 한국콘크리트학회 2001년도 봄 학술발표회 논문집
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    • pp.521-526
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    • 2001
  • Box-culvert is very important structure used almost every road construction. However this is treated very simple structure in design and construction. So many crack such as nonstructural crack has been occurred. This crack is very harmful on durability of concrete. In this study, thermal crack, one of the nonstructural crack, of box-culvert controled by using rapid-strength belite cement concrete. In this process, not only heat of hydration and thermal stress but also material mechanics properties and characteristics of durability were tested. and same model box-culvert using OPC concrete is constructed in same condition for comparison.

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고주파유도 급속 금형가열 과정의 3차원 유한요소해석 (Three-Dimensional Finite Element Analysis of the Induction Heating Procedure of an Injection Mold)

  • 손동휘;서영수;박근
    • 소성∙가공
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    • 제19권3호
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    • pp.152-159
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    • 2010
  • Rapid mold heating has been recent issue to enable the injection molding of thin-walled parts or micro/nano structures. High-frequency induction is an efficient way to heat mold surface by electromagnetic induction in a non-contact manner, and has been recently applied to the injection molding due to its capability of rapid heating and cooling of mold surface. The present study covers a three-dimensional finite element analysis to investigate heating efficiency and structural safety of the induction heating process of an injection mold. To simulate the induction heating process, an integrated simulation method is proposed by effectively connecting an electromagnetic field analysis, a transient heat transfer analysis and a thermal stress analysis. The estimated temperature changes are compared with experimental measurements for various types of induction coil, from which heating efficiency according to the coil shape is discussed. The resulting thermal stress distributions of the mold plate for various types of induction coils are also evaluated and discussed in terms of the structural safety.

급속 열처리가 a-IGZO 박막의 전도에 미치는 영향 (Effects of Rapid Thermal Annealing on the Conduction of a-IGZO Films)

  • 김도훈;조원주
    • 한국전기전자재료학회논문지
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    • 제29권1호
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    • pp.11-16
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    • 2016
  • The conduction behavior and electron concentration change in a-IGZO thin-films according to the RTA (rapid thermal annealing) were studied. The electrical characteristics of TFTs (thin-film-transistors) annealed by different temperatures were measured. The sheet resistance, electron concentration, and oxygen vacancy of a-IGZO film were measured by the four-point-probe-measurement, hall-effect-measurement, and XPS analysis. The RTA process increased the driving current of IGZO TFTs but the VTH shifted to the negative direction at the same time. When the RTA temperature is higher than $250^{\circ}C$, the leakage current at off-state increased significantly. This is attributed to the increase of oxygen vacancy resulting in the increase of electron concentration. We demonstrate that the RTA is a promising process to adjust the VTH of TFT because the RTA process can easily modify the electron concentration and control the conductivity of IGZO film with short process time.

이리듐 첨가에 의한 니켈모노실리사이드의 고온 안정화 (Thermal Stability Enhancement of Nickel Monosilicides by Addition of Iridium)

  • 윤기정;송오성
    • 한국재료학회지
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    • 제16권9호
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    • pp.571-577
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    • 2006
  • We fabricated thermal evaporated 10 nm-Ni/(poly)Si and 10 nm-Ni/1 nm-Ir/(poly)Si films to investigate the thermal stability of nickel monosilicide at the elevated temperatures by rapid annealing them at the temperatures of $300{\sim}1200^{\circ}C$ for 40 seconds. Silicides for salicide process was formed on top of both the single crystal silicon actives and the polycrystalline silicon gates. A four-point tester is used for sheet resistance. Scanning electron microscope and field ion beam were employed for thickness and microstructure evolution characterization. An x-ray diffractometer and an auger depth profile scope were used for phase and composition analysis, respectively. Nickel silicides with iridium on single crystal silicon actives and polycrystalline silicon gates showed low resistance up to $1200^{\circ}C$ and $800^{\circ}C$, respectively, while the conventional nickel monosilicide showed low resistance below $700^{\circ}C$. The grain boundary diffusion and agglomeration of silicides led to lower the NiSi stable temperature with polycrystalline silicon substrates. Our result implies that our newly proposed Ir added NiSi process may widen the thermal process window for nano CMOS process.

진공 증발법에 의해 제조된 플립 칩 본딩용 솔더의 미세 구조분석 (Microstructure Characterization of the Solders Deposited by Thermal Evaporation for Flip Chip Bonding)

  • 이충식;김영호;권오경;한학수;주관종;김동구
    • 한국표면공학회지
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    • 제28권2호
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    • pp.67-76
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    • 1995
  • The microstructure of 95wt.%Pb/5wt.%Sn and 63wt.%Sn/37wt.%Pb solders for flip chip bonding process has been characterized. Solders were deposited by thermal evaporation and reflowed in the conventional furnace or by rapid thermal annealing(RTA) process. As-deposited films show columnar structure. The microstructure of furnace cooled 63Sn/37Pb solder shows typical lamellar form, but that of RTA treated solder has the structure showing an uniform dispersion of Pb-rich phase in Sn matrix. The grain size of 95Pb/5Sn solder reflowed in the furnace is about $5\mu\textrm{m}$, but the grain size of RTA treated solder is too small to be observed. The microstructure in 63Sn/37Pb solder bump shows the segregation of Pb phase in the Sn rich matrix regardless of reflowing method. The 63Sn/37Pb solder bump formed by RTA process shows more uniform microstructure. These result are related to the heat dissipation in the solder bump.

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