• 한국기계가공학회지
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• 제19권5호
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• pp.105-110
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• 2020

The global battery market is rapidly growing due to the development of vehicles(EV) and wireless electronic products. In particular logistics robots, which hielp to produce EVs, have attracted much interest in research in Korea Because logistics sites and factories operate continuously for 24 hours, the technology that can dramatically increase the operation time of the logistics equipment is rapidly developing, and various high-level technologies are required for the batteries used in. for example, logistics robots. These required technologies include those that enable rapid battery charging as well wireless charging to charge batteries while moving. The development of these technologies, however, result in increasing explosions and topical accidents involving rapid charging batteries These accidents due to the thermal shock caused by the heat generated during the charging of the battery cell. In this study, a performance evaluation of a heat dissipation design using infrared thermal imaging was performed on an energy storage systrm(Ess) applied with an internal heat conduction cooling method using a heating plate.

• 한국세라믹학회지
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• 제56권5호
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• pp.468-473
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• 2019

This study focused on manufacturing an inorganic insulation material set with various amounts of calcium-sulfoaluminate (CSA) (hauyne) content for enhancing both workability (demolding, handling) and the high thermal insulating property. To carry out the experiment, the amounts of CSA utilized were 5%, 10%, 15%, and 20%, with anhydrous gypsum added in equal proportion to produce a stable formation. As the content of CSA increased, a sinking phenomenon occurred because of the hydration reaction from the slurry, so it was difficult to utilize a retarder normally used in the cement manufacturing process. However, an RCOOM surfactant was able to solve the local clumping problem from cement and CSA and obtain a rapid retarding effect, so it was included in this process at 0.3%. Furthermore, the cement fineness was not 7000 ㎠/g but rather 3300 ~ 4000 ㎠/g to prevent a rapid temperature increase in the slurry. The specific gravity of the sample manufactured with 20% CSA was approximately 0.11 g/㎤, and its thermal conductivity was 0.041 W/m·K, providing an excellent insulating property.

• Design & Manufacturing
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• 제15권3호
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• pp.7-12
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• 2021

Plastic injection molds used for rapid heating and cooling must minimize surface damage due to friction and maintain excellent thermal and low electrical conductivity. Accordingly, various surface treatments are being applied. The properties of Al₂O₃ coating and DLC coating were compared to find the optimal surface treatment method. Al₂O₃ coating was deposited by thermal spray method. DLC films were deposited by sputtering process in room temperature and high temperature PECVD (Plasma enhanced chemical vapor deposition) process in 723 K temperature. For the evaluation of physical properties, the electrical and thermal conductivity including surface hardness, adhesion and wear resistance were analyzed. The electrical resistance of the all coated samples was showed insulation properties of 24 MΩ/sq or more. Especially, the friction coefficient of high temp. DLC coating was the lowest at 0.134.

• 한국정밀공학회:학술대회논문집
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• 한국정밀공학회 2001년도 춘계학술대회 논문집
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• pp.28-31
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• 2001

Recently, in order to satisfy the consumer's demand the life cycle and the lead-time of a product is to be shortened. It is thus important to reduce the time and cost in manufacturing trial products. Several techniques have been developed and successfully commercialized in the market RPM(Rapid Prototyping and Manufacturing). However, most commercial systems currently use resins or waxes as the raw materials. So, the limited mechanical strength for functional testing is regarded as an obstacle towards broader application of rapid prototyping techniques. To overcome this problems, high-speed machining technology is being investigated worldwide for rapid manufacturing and even for direct rapid tooling application. In this paper, some fundamental experiments and analyses are carried out to obtain the filling time, materials, method, and process parameters for HisRP process. HisRP is a combination process using high-speed machining technology with automatic filling. In filling process, Bi58-Sn alloy is chosen because of the properties of los-melting point, low coefficient of thermal expansion and enviromental friendship. Also the use of filling wire is of advantage in term of simple and flexible mechanism. Then the rapid manufacturing product, for example a skull, is machined for aluminum material by HisRP process with an automatic set-up device of 4-faces machining.

• 한국정밀공학회지
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• 제19권3호
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• pp.88-94
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• 2002

Recently, the life cycle and the lead-time of a product are to be shortened in order to satisfy consumer's demand. It is thus important to reduce the time and cost in manufacturing trial products. Several technique have been developed and successfully commercialized in the market of RPM(Rapid Prototyping and Manufacturing). However, most commercial systems currently use resins or waxes as the raw materials. So, the limited mechanical strength for functional testing is regarded as an obstacle towards broader application of rapid prototyping techniques. To overcome these problems, high-speed machining technology is being investigated worldwide for rapid manufacturing and even for direct rapid tooling application. In this paper, some fundamental experiments and analyses are carried out to obtain the filling time, materials, method, and process parameters for HisRP(High-Speed RP) process. HisRP is a new RP process that is combined high-speed machining with automatic filling. In filling process, Bi58-Sn alloy is chosen as filling material because of the properties of low-melting point, low coefficient of thermal expansion and no harm to environment. Also the use of filling wire it if advantage since it needs simple and flexible mechanism. Then the rapid product, for example a skull, is manufactured for aluminum material by HisRP process with an automatic set-up device thor 4-faces machining.

• 한국재료학회:학술대회논문집
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• 한국재료학회 2010년도 춘계학술발표대회
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• pp.58.1-58.1
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• 2010

We have developed a novel crystallization process, where the crystallization temperature is lowered compared to the conventional RTA process and the metal contamination is lowered compared to the conventional VIC process. A very-thin a-Si film was deposited and crystallized at $550^{\circ}C$ for 3 h by the VIC process and then a thick a-Si film was deposited and crystallized by the RTA process at $680^{\circ}C$ for 5 min using the VIC poly-Si layer as a crystallization seed layer. The RTA crystallized temperature could be lowered up to $50^{\circ}C$, compared to RTA process alone. The poly-Si film appeared a needle-like growth front and relatively well-arranged (111) orientation. In addition, the Ni concentration in the poly-Si film was lowered to $3{\times}10^{17}\;cm^{-3}$ and that at the poly-Si/$SiO_2$ interface was lowered to $5{\times}10^{19}\;cm^{-3}$. The reduction in metal contamination could be greatly helpful to achieve a low leakage current in poly-Si TFT, which is the critical parameter for commercialization of AMOLED.

• 대한전자공학회논문지SD
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• 제45권8호
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• pp.11-16
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• 2008

본 논문에서는 먼저 RTP(Rapid Thermal Processor) 장치를 스트레스 측정에 용이한 구조로 제작하고 PC에서 통합 공정관리 시스템을 설계하였다. 다음으로는 Large deformation 이론을 바탕으로 반도체 웨이퍼 표면의 변형검사를 위한 레이져 인터페로미터리를 구성하였다. 궁극적으로 이러한 레이져장치로부터 웨이퍼 표면의 영상을 추출하고 세선화, 블록화 그리고 스트레스 분포도의 순서로 영상처리 하여 스트레스로 인한 웨이퍼 표면의 변형을 검사하였다. 실험을 하기 위해 변형이 이루어지도록 웨이퍼의 후면을 1mm정도 갈아낸 후 약 1000도에서 $3\sim4$회 열처리를 수행하였으며, 열처리를 가한 영상과 가하지 않은 영상을 통하여 웨이퍼 열처리 후 심각한 변형이 이루어졌음을 알 수 있었다.

• 한국진공학회지
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• 제12권3호
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• pp.168-173
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• 2003

유리 기판 위에 증착된 비정질 실리콘 박막의 고상 결정화에 대한 새로운 방법을 제시하였다. 비정질 실리콘 박막의 하부에 패턴 된 다양한 크기의 $TiSi_2$ 박막을 전기저항 가열 방식으로 가열함으로서 비정질 실리콘이 고상 결정화 되도록 하였다. 박막히터를 이용한 열처리는 매우 빠른 열처리 공정으로써, 일반적인 로에 의한 열처리에 비해 매우 낮은 thermal budget을 가지므로, 유리기판 위에서도 고온 열처리가 가능하다는 장점을 가진다. 본 연구에서는 500 $\AA$의 비정질 실리콘 박막을 약 $850^{\circ}C$ 이상의 높은 온도에서 수 초 내에 결정화 할 수 있음을 보였으며, 열처리 조건의 변화에 따른 영향과 지역선택성의 장점을 보였다.

• 대한전기학회:학술대회논문집
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• 대한전기학회 1988년도 전기.전자공학 학술대회 논문집
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• pp.383-386
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• 1988

In MOS integrated circuits, annealing after oxidation process is necessary to improve physical properties of silicon dioxide. With subsequent annealing in inert gases such as nitrogen or argon, and excess silicon bond is allowed time to complete the oxidation and surface charge density is reduced. In this paper, we will present effects of the rapid thermal annealing on silicon dioxide. In order to evaluate characteristics of silicon dioxide, we analyzed C-V curve dependent on annealing time and temperature, and presented variation of fixed oxide charge.

• 한국전기전자재료학회논문지
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• 제11권7호
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• pp.535-540
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• 1998

Thin films of PLZT were prepared on indium tin oxide(ITO) coated glass substrates by sol-gel process and annealed by rapid thermal annealing(RTA) at $750^{\circ}C$ for 5 minutes. The crystal structure of PLZT thin films were investigated for a different Zr mol% content. XRD results showed that the crystallographic structure was transitted from tetragonal to rhombohedral structure as Zr mol% increased. Raman spectroscopy results showed that the bands of spectra became broader as the amount of Zr mol% increased and two crystal phase coexisted at 2/55/45 PLZT film. Raman spectroscopy was useful for crystal structure analysis of PLZT thin films.