• Journal of the Institute of Electronics Engineers of Korea SD
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• v.39 no.5
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• pp.16-22
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• 2002

This paper suggests the optimum processing conditions for obtaining good quality $P^{+}$-n shallow junctions formed by pre-amorphization and furnace annealing(FA) to reflow BPSG(bore phosphosilicate glass). $BF_2$ions, the p-type dopant, were implanted with the energy of 20keV and the dose of 2$\times$10$^{15}$ cm$^{-2}$ into the substrates pre-amorphized by As or Ge ions with 45keV, 3$\times$$10^{14}$ $cm^{-2}$. High temperature annealings were performed with a furnace and a rapid thermal annealer. The temperature range of RTA was 950~$1050^{\circ}C$, and the furnace annealing was employed for BPSG reflow with the temperature of $850^{\circ}C$ for 40 minutes. To characterize the formed junctions, junction depth, sheet resistance and diode leakage current were measured. Considering the preamorphization species, Ge ion exhibited better results than As ion. Samples preamorphized with Ge ion and annealed with $1000^{\circ}C$ RTA showed the most excellent characteristics. When FA was included, Ge preamorphization with $1050^{\circ}C$ RTA plus FA showed the lowest product of sheet resistance and junction depth and exhibited the lowest leakage currents.

• Journal of the Korean Society of Fisheries and Ocean Technology
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• v.28 no.1
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• pp.71-78
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• 1992

Zr-4 used for a cladding and an end plug of reactor component has creep deformation under operation at high temperature. Creep is regarded as the time dependent deformation of a material under constant applied stress. Although the major source of the deformation of zirconium component in water-cooled reactors is irradiation creep, the thermal creep may give a rise to significant deformation in reactor component especially at relatively high temperatures and at various constant stresses, and therefore it must be predicted accurately. Stress relaxation is the time dependent change of stress at constant strain and it is a process related intimately to creep. In this paper, the creep behavior and stress relaxation of Zr-4 is examined at the temperature of 50$0^{\circ}C$ that is 40% of the absolute melting temperature of Zr-4 under the stress below yield stress and under the various constant strains. The results obtained are summarized as follows: 1) With an increase of stress, the steady state creep rate increases and the creep rupture time decreases. 2) The steady state creep rate $\varepsilon$(%/s) for the stress $\sigma$sub(c) (kgf/mm super(2)) of Zr-4 increases outstandingly. All the empirical equations computed for Zr-4 increases outstandingly. All the empirical equations computed for Zr-4 are in accord with Norton's model equation($\varepsilon$=K$\sigma$ sub(c) super (n)). The constants of materials computed are as follows: K=3.9881$\times$10 super(-5), n=1.9608 3) The rupture time T sub(r) (hr) decreases linearly with the increase of stress on the log-log scaled graph. The empirical equations computed for Zr-4 are in accord with Bailey's model equation (T sub(r)=K sub(1)$\sigma$sub(c) super(m)). The constants of materials computed are as follows: K sub(1)=1.2875$\times$10 super(16), m=-3.467 4) It seems clear that the strain could be quantitatively dependent on the high temperature creep properties such as creep stress, rupture time, steady state creep rate and total creep rate. It is found that these relationships are linear on the log-log graph. 5) In stress relaxation test, as the critical constant strain that can be allowed to the specimen is larger, stress relaxation becomes more rapid, and as the constant strain is smaller, the stress relaxation becomes slower.

• Proceedings of the Korean Vacuum Society Conference
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• 2014.02a
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• pp.490.2-490.2
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• 2014

Since the general solar cells accept sun light at the front side, excluding the electrode area, electrons move from the emitter to the front electrode and start to collect at the grid edge. Thus the edge of gridline can be important for electrical properties of screen-printed silicon solar cells. In this study, the improvement of electrical properties in screen-printed crystalline silicon solar cells by contact treatment of grid edge was investigated. The samples with $60{\Omega}/{\square}$ and $70{\Omega}/{\square}$ emitter were prepared. After front side of samples was deposited by SiNx commercial Ag paste and Al paste were printed at front side and rear side respectively. Each sample was co-fired between $670^{\circ}C$ and $780^{\circ}C$ in the rapid thermal processing (RTP). After the firing process, the cells were dipped in 2.5% hydrofluoric acid (HF) at room temperature for various times under 60 seconds and then rinsed in deionized water. (This is called "contact treatment") After dipping in HF for a certain period, the samples from each firing condition were compared by measurement. Cell performances were measured by Suns-Voc, solar simulator, the transfer length method and a field emission scanning electron microscope. According to HF treatment, once the thin glass layer at the grid edge was etched, the current transport was changed from tunneling via Ag colloids in the glass layer to direct transport via Ag colloids between the Ag bulk and the emitter. Thus, the transfer length as well as the specific contact resistance decreased. For more details a model of the current path was proposed to explain the effect of HF treatment at the edge of the Ag grid. It is expected that HF treatment may help to improve the contact of high sheet-resistance emitter as well as the contact of a high specific contact resistance.

• Korean Journal of Food Science and Technology
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• v.43 no.6
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• pp.696-701
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• 2011

To evaluate the processing adaptability of taro flours, the physicochemical properties of taro flour with different drying, roasting and steaming conditions were investigated. The moisture content and total dietary fiber were decreased as temperature increased with hot-air drying. Freeze-dried taro flours showed the highest vitamin C contents. Taro flours made by freeze-drying and hot-air drying showed significantly higher total dietary fiber content than those with roasting and steaming process. Steamed taro flours had the highest water absorption index, while hot-air dried and freeze dried taro flours had the highest water solubility index. No differences were displayed in the differential scanning calorimetry (DSC) thermal characteristics among hot-air dried and freeze dried taro flours. Roasted taro displayed decreased onset temperature and peak temperature as roasting temperature increased. Using a rapid visco-analyzer, the peak viscosity, through viscosity, and final viscosity of dried and steamed taro flours were higher than roasted taro flours, whereas the set back value, which is a prediction of retrogradation, decreased with steaming processing. From those results, it could be concluded that hotair dried taro flours, which have high gelatinization viscosity, are beneficial in imparting viscosity to dough products and hot-air drying after steaming taro flours, which retard retrogradation, is good for porridge and flake base products.

• Korean Journal of Fisheries and Aquatic Sciences
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• v.23 no.5
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• pp.361-372
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• 1990

Processing conditions of whole sardine into modified fish sauce were investigated. Thawed and chopped sardine was homogenized and hydrolyzed using commercial proteolytic enzymes such as complex enzyme-2000($2.18{\cdot}10^4U/g solid$) and alcalase($1.94{\cdot}10^4\;U/g solid$) in a cylindrical vessel with 4 baffles and 6-bladed impeller. Optimal pH, enzyme concentration and temperature for the hydrolysis with complex enzyme-2000 were 7.0, $7\%$ (W/W) and $52^{\circ}C$, and-those with alcalase were 8.0, $6\%$ (W/W) and $60^{\circ}C$. In both cases, the reasonable amount of water for homogenization, agitation speed and hydrolyzing time were $100\%$ (W/W), 100 rpm and 210 minutes. Thermal treatment of the filtered hydrolysate at $90^{\circ}C$ for 2 hours with $6\%$ of invert sugar was adequated to inactivation of the enzymes and pasteurization of the hydrolysate. Flavor, taste and color of the hydrolysate were improved during the heating process in which the browning products might participate. The content of free amino nitrogen in the fish sauce seasoned with $15\%$ of table salt was ca. $1,640 mg\%$. Yield of the fish sauce based on the contents of proteinous and free amino nitrogen in the raw whole sardine was ca. $86\%$, and ca. $96\%$ of these compounds of the fish sauce was in the form of free amino nitrogen. The pH, salinity and histamine content of the fish sauce were $6.1\~6.3,\;14.2\~14.3\%$ and less than $10\;mg\%$.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2007.06a
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• pp.257-257
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• 2007

고밀도 FeRAM (Ferroe!ectric Random Access Memory) 소자를 개발하기 위해서는 강유전체 물질을 이용한 안정적인 스텍형의 커패시터 개발이 필수적이다. 특히 $(Bi,La)_4Ti_3O_{12}$ (BLT) 강유전체 물질을 이용하는 경우에는 낮은 열처리 온도에서도 균질하고 높은 값의 잔류 분극 값을 확보하는 것이 가장 중요한 과제 중의 하나이다. 불행히도, BLT 물질은 a-축으로는 약 $50\;{\mu}C/cm^2$ 정도의 높은 잔류 분극 값을 갖지만, c-축 방향으로는 $4\;{\mu}C/cm^2$ 정도의 낮은 잔류 분극 값을 나타내는 동의 강한 비등방성 특성을 보인다. 따라서 BLT 박막에서 각각 입자들의 크기 및 결정 방향성을 세밀하게 제어하는 것은 무엇보다 중요하다. 본 연구에서는 16 Mb의 1T/1C (1-transistor/1-capacitor) 형의 FeRAM 소자를 BLT 박막을 적용하여 제작하였다. 솔-젤 (sol-gel) 용액을 이용하여 스핀코팅법으로 BLT 박막을 증착하고, 후속 열처리 공정을 RTP (rapid thermal process) 공정을 이용하여 수행하였다. 커패시터의 하부 전극 및 상부 전극은 각각 Pt/IrOx/lr 및 Pt을 적용하였다. 반응성 이온 에칭 (RIE: reactive ion etching) 공정을 이용하여 커패시터를 형성시킨 후, 32k-array (unit capacitor: $0.68\;{\mu}m$) 패턴에서 측정한 스위칭 분극 (dP=P*-P^) 값은 약 $16\;{\mu}C/cm^2$ 정도이고, 웨이퍼 내에서의 균일도도 2.8% 정도로 매우 우수한 특성을 보였다. 그러나 단위 셀들의 특성을 평가하기 위하여 bit-line의 전압을 측정한 결과, 약 10% 정도의 커패시터에서 불량이 발생하였다. 그리고 이러한 불량 젤들은 매우 불규칙적으로 분포함을 확인할 수 있었다. 이러한 불량 원인을 파악하기 위하여 양호한 젤과 불량이 발생한 셀에서의 BLT 박막의 미세구조를 분석하였다. 양호한 셀의 BLT 박막 입자들은 불량한 셀에 비하여 작고 비교적 균일한 크기를 갖고 있었다. 이에 비하여 불량한 셀에서의 BLT 박막에는 과대 성장한 입자들이 존재하고 이에 따라서 입자 크기가 매우 불균질한 것으로 확인되었다. 또 이러한 과대 성장한 입자들은 거의 모두 c-축 배향성을 나타내었다. 이상의 실험 결과들로부터, BLT 박막을 이용하여 제작한 FeRAM 소자에서 발생하는 불규칙한 셀 불량의 주된 원인은 c-축 배향성을 갖는 과대 성장한 입자의 생성임을 알 수 있었다. 즉 BLT 박막을 이용하여 FeRAM 소자를 제작하는 경우, 균일한 크기의 입자 및 c-축 배향성의 입자 억제가 매우 중요한 기술적 요소임을 알 수 있었다.

• Proceedings of the Korean Vacuum Society Conference
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• 2000.02a
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• pp.186-186
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• 2000

After LeComber et al. reported the first amorphous hydrogenated silicon (a-Si: H) TFT, many laboratories started the development of an active matrix LCDs using a-Si:H TFTs formed on glass substrate. With increasing the display area and pixel density of TFT-LCD, however, high mobility TFTs are required for pixel driver of TF-LCD in order to shorten the charging time of the pixel electrodes. The most important of these drawbacks is a-Si's electron mobiliy, which is the speed at which electrons can move through each transistor. The problem of low carier mobility for the a-Si:H TFTs can be overcome by introducing polycrystalline silicon (poly-Si) thin film instead of a-Si:H as a semiconductor layer of TFTs. Therefore, poly-Si has gained increasing interest and has been investigated by many researchers. Recnetly, fabrication of such poly-Si TFT-LCD panels with VGA pixel size and monolithic drivers has been reported, . Especially, fabricating poly-Si TFTs at a temperature mach lower than the strain point of glass is needed in order to have high mobility TFTs on large-size glass substrate, and the monolithic drivers will reduce the cost of TFT-LCDs. The conventional methods to fabricate poly-Si films are low pressure chemical vapor deposition (LPCVD0 as well as solid phase crystallization (SPC), pulsed rapid thermal annealing(PRTA), and eximer laser annealing (ELA). However, these methods have some disadvantages such as high deposition temperature over $600^{\circ}C$, small grain size (<50nm), poor crystallinity, and high grain boundary states. Therefore the low temperature and large area processes using a cheap glass substrate are impossible because of high temperature process. In this study, therefore, we have deposited poly-Si thin films on si(100) and glass substrates at growth temperature of below 40$0^{\circ}C$ using newly developed high rate magnetron sputtering method. To improve the sputtering yield and the growth rate, a high power (10~30 W/cm2) sputtering source with unbalanced magnetron and Si ion extraction grid was designed and constructed based on the results of computer simulation. The maximum deposition rate could be reached to be 0.35$\mu$m/min due to a high ion bombardment. This is 5 times higher than that of conventional sputtering method, and the sputtering yield was also increased up to 80%. The best film was obtained on Si(100) using Si ion extraction grid under 9.0$\times$10-3Torr of working pressure and 11 W/cm2 of the target power density. The electron mobility of the poly-si film grown on Si(100) at 40$0^{\circ}C$ with ion extraction grid shows 96 cm2/V sec. During sputtering, moreover, the characteristics of si source were also analyzed with in situ Langmuir probe method and optical emission spectroscopy.

• Proceedings of the Korean Vacuum Society Conference
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• 2013.08a
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• pp.131-131
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• 2013

A single-layer graphene has been uniformly grown on a Cu surface at elevated temperatures by thermally processing a poly(methyl methacrylate) (PMMA) film in a rapid thermal annealing (RTA) system under vacuum. The detailed chemistry of the transition from solid-state carbon to graphene on the catalytic Cu surface was investigated by performing in-situ residual gas analysis while PMMA/Cu-foil samples being heated, in conjunction with interrupted growth studies to reconstruct ex-situ the heating process. The data clearly show that the formation of graphene occurs with hydrocarbon molecules vaporized from PMMA, such as methane and/or methyl radicals, as precursors rather than by the direct graphitization of solid-state carbon. We also found that the temperature for vaporizing hydrocarbon molecules from PMMA and the length of time the gaseous hydrocarbon atmosphere is maintained, which are dependent on both the heating temperature profile and the amount of a solid carbon feedstock are the dominant factors to determine the crystalline quality of the resulting graphene film. Under optimal growth conditions, the PMMA-derived graphene was found to have a carrier (hole) mobility as high as ~2,700 cm2V-1s-1 at room temperature, superior to common graphene converted from solid carbon.

• The Journal of the Korea institute of electronic communication sciences
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• v.14 no.3
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• pp.497-504
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• 2019

We fabricated $HfO_2$ thin films using RF magnetron sputtering method, and investigated structural and optical properties of $HfO_2$ thin films with RTA temperatures in $N_2$ ambient. $HfO_2$ thin films exhibited polycrystalline structure regardless of annealing process, FWHM of M (-111) showed reduction trend. The surface roughness showed the smallest of 3.454 nm at a annealing temperature of $600^{\circ}C$ in result of AFM. All $HfO_2$ thin films showed the transmittance of about 80% in visible light range. By fitting the refractive index from the transmittance and reflectance to the Sellmeir dispersion relation, we can predict the refractive index of the $HfO_2$ thin film according to the wavelength. The $HfO_2$ thin film annealed at $600^{\circ}C$ exhibited a high refractive index of 2.0223 (${\lambda}=632nm$) and an excellent packing factor of 0.963.

• Korean Journal of Food Science and Technology
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• v.39 no.5
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• pp.534-540
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• 2007

In this study, waxy rice starch was chemically modified using phosphorous oxychloride ($POCl_3$, 0.002-0.008%). Then the physicochemical properties of resulting cross-linked waxy rice starches were investigated in order to reduce the steeping time of Yukwa (a Korean oil-puffed rice snack) processing. The swelling powers of the cross-linked waxy rice starch samples were higher than the native waxy rice starch at temperatures above $60^{\circ}C$, and their increases were proportional to the $POCl_3$, concentration. The solubility of the cross-linked waxy rice starch was lower (1.6-3.4%) than the native waxy rice starch (2.7-6.1%). However, the moisture sorption isotherm of the cross-linked waxy rice starch was not significantly different from the native waxy rice starch. The rapid visco analyze. (RVA) pasting temperatures $(65.4-67^{\circ}C)$ of the cross-linked waxy rice starch were lower than those of the native starch $(67^{\circ}C)$. The RVA peak viscosities (287-337 RVU) of the cross-linked waxy rice starch were higher than that of native starch (179 rapid visco units (RVU)), and increased with increasing $POCl_3$ concentration. For the differential scornning calorimeter thermal characteristics, although Tc shifted toward higher temperatures with cross-linking, the To, Tp, and amylopectiin melting enthalpy of the cross-linked waxy rice starch showed no differences compared to the native waxy rice starch. The X-ray diffraction patterns of both the native and cross-linked waxy rice starches showed typical A-type crystal patterns, suggesting that cross-linking mainly occurs in the amorphous regions of starch granules. Therefore, the cross-linking reaction did not change the crystalline region, but altered the amorphous region of the waxy rice starch molecules, resulting in changes of solubility and RVA pasting properties in the cross-linked waxy rice starch. In summary, since cross-linked waxy rice starch has a high puffing efficiency and no browning reaction, it may be applicable for Yukwa processing without a long steeping process.