• The Korean Journal of Petroleum Geology
• /
• v.14 no.1
• /
• pp.1-11
• /
• 2008

As conventional oil and gas reservoirs become depleted, interests for oil sands has rapidly increased in the last decade. Oil sands are mixture of bitumen, water, and host sediments of sand and clay. Most oil sand is unconsolidated sand that is held together by bitumen. Bitumen has hydrocarbon in situ viscosity of >10,000 centipoises (cP) at reservoir condition and has API gravity between $8-14^{\circ}$. The largest oil sand deposits are in Alberta and Saskatchewan, Canada. The reverves are approximated at 1.7 trillion barrels of initial oil-in-place and 173 billion barrels of remaining established reserves. Alberta has a number of oil sands deposits which are grouped into three oil sand development areas - the Athabasca, Cold Lake, and Peace River, with the largest current bitumen production from Athabasca. Principal oil sands deposits consist of the McMurray Fm and Wabiskaw Mbr in Athabasca area, the Gething and Bluesky formations in Peace River area, and relatively thin multi-reservoir deposits of McMurray, Clearwater, and Grand Rapid formations in Cold Lake area. The reservoir sediments were deposited in the foreland basin (Western Canada Sedimentary Basin) formed by collision between the Pacific and North America plates and the subsequent thrusting movements in the Mesozoic. The deposits are underlain by basement rocks of Paleozoic carbonates with highly variable topography. The oil sands deposits were formed during the Early Cretaceous transgression which occurred along the Cretaceous Interior Seaway in North America. The oil-sands-hosting McMurray and Wabiskaw deposits in the Athabasca area consist of the lower fluvial and the upper estuarine-offshore sediments, reflecting the broad and overall transgression. The deposits are characterized by facies heterogeneity of channelized reservoir sands and non-reservoir muds. Main reservoir bodies of the McMurray Formation are fluvial and estuarine channel-point bar complexes which are interbedded with fine-grained deposits formed in floodplain, tidal flat, and estuarine bay. The Wabiskaw deposits (basal member of the Clearwater Formation) commonly comprise sheet-shaped offshore muds and sands, but occasionally show deep-incision into the McMurray deposits, forming channelized reservoir sand bodies of oil sands. In Canada, bitumen of oil sands deposits is produced by surface mining or in-situ thermal recovery processes. Bitumen sands recovered by surface mining are changed into synthetic crude oil through extraction and upgrading processes. On the other hand, bitumen produced by in-situ thermal recovery is transported to refinery only through bitumen blending process. The in-situ thermal recovery technology is represented by Steam-Assisted Gravity Drainage and Cyclic Steam Stimulation. These technologies are based on steam injection into bitumen sand reservoirs for increase in reservoir in-situ temperature and in bitumen mobility. In oil sands reservoirs, efficiency for steam propagation is controlled mainly by reservoir geology. Accordingly, understanding of geological factors and characteristics of oil sands reservoir deposits is prerequisite for well-designed development planning and effective bitumen production. As significant geological factors and characteristics in oil sands reservoir deposits, this study suggests (1) pay of bitumen sands and connectivity, (2) bitumen content and saturation, (3) geologic structure, (4) distribution of mud baffles and plugs, (5) thickness and lateral continuity of mud interbeds, (6) distribution of water-saturated sands, (7) distribution of gas-saturated sands, (8) direction of lateral accretion of point bar, (9) distribution of diagenetic layers and nodules, and (10) texture and fabric change within reservoir sand body.

• Journal of the Korean Society of Food Science and Nutrition
• /
• v.32 no.5
• /
• pp.661-666
• /
• 2003

This research was aimed at evaluating the effects of natural antioxidants on lipid oxidation and sensory quality in cooked, chill- stored and reheated Wanjajun prepared with pork meat (short shank). Sage (SA) and combinations of herbs; basil/mints (BM), rosemary/parsley/thyme (RPT) were used as sources of antioxidants. The products were pan-fried in a medium layer of soybean oil and then stored in a refrigerator at 3$^{\circ}C$ for 8 days after rapid chilling. The process of heat treatment of Wanjajun caused changes in the chemical composition of products and simultaneously, thermal oxidative reaction was initiated. During storage of products in a refrigerator, further hydrolytic and oxidative processes in the lipid extraction were progressed. Acid value was increased, peroxides and malonaldehyde formation gradually were increased during cool storage. Addition of garlic, sage and combinations of herbs retarded the process of oxidation. Wanjajun made with addition of SA and RPT showed good quality in antioxidative potential after 8 days of storage. The sensory effect of herbs on undesirable warmed-over flavor was in order of : SA>RPT>BM.

• Journal of the Microelectronics and Packaging Society
• /
• v.13 no.1 s.38
• /
• pp.1-5
• /
• 2006

We prepared 80 nm-thick TiSix on each 70 nm-thick amorphous silicon and polysilicon substrate using an RF sputtering with $TiSi_2$ target. TiSix composite silicide layers were stabilized by rapid thermal annealing(RTA) of $800^{\circ}C$ for 20 seconds. Line width of $0.5{\mu}m$ patterns were embodied by photolithography and dry etching process, then each additional annealing process at $750^{\circ}C\;and\;850^{\circ}C$ for 3 hours was executed. We investigated the change of sheet resistance with a four-point probe, and cross sectional microstructure with a field emission scanning electron microscope(FE-SEM) and transmission electron microscope(TEM), respectively. We observe an abrupt change of resistivity and voids at the silicide surface due to interdiffusion of silicide and composite titanium silicide in the amorphous substrates with additional $850^{\circ}C$ annealing. Our result implies that the electrical resistance of composite titanium silicide may be tunned by employing appropriate substrates and annealing condition.

• Journal of the Korea Academia-Industrial cooperation Society
• /
• v.20 no.9
• /
• pp.532-540
• /
• 2019

PET microfibers with various diameters (0.5, 0.2, 0.06, and 0.01 dpf) were dyed with a dispersed dye (C.I. Disperse Blue 56) at various temperatures. The dyeing process was conducted under infinite dyebath conditions at constant temperatures. The effects of the dyeing temperature and diameter on the partition coefficient, affinity, and diffusion coefficient of disperse dyes were studied. The curve of isotherms was fitted well to Nernst-type model in a large range of initial dye concentrations. At the same temperature, the partition coefficient and affinity decreased with increasing sample diameter due to the increase in surface area. At all deniers, the partition coefficient and affinity decreased with increasing temperature because the dyeing process is an exothermic reaction. In addition, the decrease in radius of the sample gives rise to a decrease in the heat of dyeing. The fine diameter of the sample resulted in an increased surface area but decreased space between the microfibers. Consequently, decreasing the diameter of the microfibers leads to a decrease in the diffusion coefficient. At the same diameter, the diffusion coefficient increased with increasing temperature because of rapid dye movement and the large free volume of the sample inside. In addition, thermal dependence of the diffusion coefficient increased when the diameter of the sample increased.

• Korean Journal of Metals and Materials
• /
• v.46 no.11
• /
• pp.762-769
• /
• 2008

Hydrogenated amorphous silicon(a-Si : H) layers, 120 nm and 50 nm in thickness, were deposited on 200 $nm-SiO_2$/single-Si substrates by inductively coupled plasma chemical vapor deposition(ICP-CVD). Subsequently, 30 nm-Ni layers were deposited by E-beam evaporation. Finally, 30 nm-Ni/120 nm a-Si : H/200 $nm-SiO_2$/single-Si and 30 nm-Ni/50 nm a-Si:H/200 $nm-SiO_2$/single-Si were prepared. The prepared samples were annealed by rapid thermal annealing(RTA) from $200^{\circ}C$ to $500^{\circ}C$ in $50^{\circ}C$ increments for 30 minute. A four-point tester, high resolution X-ray diffraction(HRXRD), field emission scanning electron microscopy (FE-SEM), transmission electron microscopy (TEM), and scanning probe microscopy(SPM) were used to examine the sheet resistance, phase transformation, in-plane microstructure, cross-sectional microstructure, and surface roughness, respectively. The nickel silicide on the 120 nm a-Si:H substrate showed high sheet resistance($470{\Omega}/{\Box}$) at T(temperature) < $450^{\circ}C$ and low sheet resistance ($70{\Omega}/{\Box}$) at T > $450^{\circ}C$. The high and low resistive regions contained ${\zeta}-Ni_2Si$ and NiSi, respectively. In case of microstructure showed mixed phase of nickel silicide and a-Si:H on the residual a-Si:H layer at T < $450^{\circ}C$ but no mixed phase and a residual a-Si:H layer at T > $450^{\circ}C$. The surface roughness matched the phase transformation according to the silicidation temperature. The nickel silicide on the 50 nm a-Si:H substrate had high sheet resistance(${\sim}1k{\Omega}/{\Box}$) at T < $400^{\circ}C$ and low sheet resistance ($100{\Omega}/{\Box}$) at T > $400^{\circ}C$. This was attributed to the formation of ${\delta}-Ni_2Si$ at T > $400^{\circ}C$ regardless of the siliciation temperature. An examination of the microstructure showed a region of nickel silicide at T < $400^{\circ}C$ that consisted of a mixed phase of nickel silicide and a-Si:H without a residual a-Si:H layer. The region at T > $400^{\circ}C$ showed crystalline nickel silicide without a mixed phase. The surface roughness remained constant regardless of the silicidation temperature. Our results suggest that a 50 nm a-Si:H nickel silicide layer is advantageous of the active layer of a thin film transistor(TFT) when applying a nano-thick layer with a constant sheet resistance, surface roughness, and ${\delta}-Ni_2Si$ temperatures > $400^{\circ}C$.

• Journal of Welding and Joining
• /
• v.30 no.1
• /
• pp.64-71
• /
• 2012

The characteristics of high heat input (342kJ/cm) EG (Electro Gas Arc) welded joint of EH36-TM steel has been investigated. The weld metal microstructure consisted of fine acicular ferrite (AF), a little volume of polygonal ferrite (PF) and grain boundary ferrite (GBF). Charpy impact test results of the weld metal and heat affected zone (HAZ) met the requirement of classification rule (Min. 34J at $-20^{\circ}C$). In order to evaluate the relationship between the impact toughness property and the grain size of HAZ, the austenite grain size of HAZ was measured. The prior austenite grain size in Fusion line (F.L+0.1 mm) was about $350{\mu}m$. The grain size in F.L+1.5 mm was measured to be less than $30{\mu}m$ and this region was identified as being included in FGHAZ(Fine Grain HAZ). It is seen that as the austenite grain size decreases, the size of GBF, FSP (Ferrite Side Plate) become smaller and the impact toughness of HAZ increases. Therefore, the CGHAZ was considered to be area up to 1.3mm away from the fusion line. Results of TEM replica analysis for a welded joint implied that very small size ($0.8\sim1.2{\mu}m$) oxygen inclusions played a role of forming fine acicular ferrite in the weld metal. A large amount of (Ti, Mn, Al)xOy oxygen inclusions dispersed, and oxides density was measured to be 4,600-5,300 (ea/mm2). During the welding thermal cycle, the area near a fusion line was reheated to temperature exceeding $1400^{\circ}C$. However, the nitrides and carbides were not completely dissolved near the fusion line because of rapid heating and cooling rate. Instead, they might grow during the cooling process. TiC precipitates of about 50 ~ 100nm size dispersed near the fusion line.

• 한국신재생에너지학회:학술대회논문집
• /
• 2010.06a
• /
• pp.78.2-78.2
• /
• 2010

Cu(In,Ga)Se2 (CIGS)박막태양전지는 간단한구조와 가격경쟁력 및 고효율화 가능성에 대한 기대감에 의해 많은 연구가 수행되어오고 있다. 특히 높은 흡수계수와 적절한 밴드갭, 큰 결정크기와 같은 물질의 특성들이 장점으로 작용하고 있기 때문이다. 또한 CIGS박막태양전지는 다른 태양전지에 비해 광열화가 적다는 장점도 가지고 있다. CIGS 박막은 CuInSe2내의 In 사이트에 Ga을 도핑함으로서 형성이 되는데 그때의 밴드갭은 약 1.4eV이며 이를 형성하기 위해 많은 방법들이 제안되고 있는데, CIGS박막 형성 시 가장 중요시 여겨야 될 인자는 구성원소로부터 최적화된 조성비를 찾는 것이다. 이러한 관점에서 볼때 evaporation법이나 sputtering법같은 진공방식의 공정법이 비진공방식에 비해 최적의 조성비를 찾는 것이 수월할 것으로 생각된다. selenization을 하기전에, 동시증착이나 다층박막형성을 통해 Cu-In-Se의 조합이 일반적으로 이루어진다. 어떤방법이든 Se의 부가적인 공급이 이루어지는데 시작 전구체의 조합에서 그 해법을 제시하는 것에 대한 논의가 많이 부족한 현실로서, CuInSe2의 단일전구체에 의한 박막형성과 특성평가에 대해 구체적인 논의가 필요하다. 본 실험에서는 Cu-In-Se 전구체를 CuInSe2 단일 타겟에서부터 RF 마그네트론 스퍼터링법을 이용하여 박막증착을 하여 Se의 Rapid Thermal Process(RTA)법을 통해 Se이 순차적으로 공급되었다. 이때 형성되는 박막의 태양전지 흡수층 적용을 위한 광학적, 전기적 및 구조적에 대한 논의된다. Soda lime glass(SLG)와 Corning 1737 유리를 기판으로 하여 아세톤-에탄올을 이용, 초음파세척을 실시하였다. 스퍼터 공정을 하기전에 흡착된 물분자를 제거하기 위하여 약 30분간 $120^{\circ}C$로 열을 가해주었으며, 공정을 위한 총 아르곤 가스의 양은 약 50sccm이며 이때의 공정압력은 20mtorr로 고정하였다. 우선 RF power와 기판온도에 따른 단일전구체 형성을 관찰하기 위하여 각각 30~80W, RT~$400^{\circ}C$로 변화를 주어 박막을 형성한 후 모든 sample에 대하여 $500^{\circ}C$분위기에 effusion cell을 이용하여 Se 분위기에서 결정화를 실시하였다. 샘플의 두께는 Surface profiler로 측정하였고 단면은 전자주사현미경으로 관찰되었다. 동시에 SEM이미지를 통하여 morphology와 grain size 및 EDX를 통하여 조성분석을 하였다. 밴드갭, 투과율 및 흡수계수는 UV-VIS-NIR분광분석법을 통하여 수행되었으며, 전기적 특성분석을 위해 4-point-probe와 Hall effect측정을 수행하였다. 공정변수에 따른 단일타겟으로 얻어 결정화된 CuInSe2박막의 자세한 결과와 논의에 대하여 발표한다.

• Journal of the Institute of Electronics Engineers of Korea SD
• /
• v.38 no.11
• /
• pp.771-780
• /
• 2001

It is indispensable to use the process and device simulation tool in order to analyze accurately the electrical characteristics of ULSI CMOS devices, in addition to developing and manufacturing those devices. The 3D Monte Carlo (MC) simulation result is not efficient for large-area application because of the lack of simulation particles. In this paper is reported a new efficient simulation strategy for 3D MC ion implantation into large-area application using the 3D MC code of TRICSI(TRansport Ions into Crystal Silicon). The strategy is related to our newly proposed split-trajectory method and ion-splitting method(ion-shadowing approach) for 3D large-area application in order to increase the simulation ions, not to sacrifice the simulation accuracy for defects and implanted ions. In addition to our proposed methods, we have developed the cell based 3D interpolation algorithm to feed the 3D MC simulation result into the device simulator and not to diverge the solution of continuous diffusion equations for diffusion and RTA(rapid thermal annealing) after ion implantation. We found that our proposed simulation strategy is very computationally efficient. The increased number of simulation ions is about more than 10 times and the increase of simulation time is not twice compared to the split-trajectory method only.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
• /
• 2010.06a
• /
• pp.11-11
• /
• 2010

Thin-film-transistors (TFTs) that can be deposited at low temperature have recently attracted lots of applications such as sensors, solar cell and displays, because of the great flexible electronics and transparent. Transparent and flexible transistors are being required that high mobility and large-area uniformity at low temperature [1]. But, unfortunately most of TFT structures are used to be $SiO_2$ as gate dielectric layer. The $SiO_2$ has disadvantaged that it is required to high driving voltage to achieve the same operating efficiency compared with other high-k materials and its thickness is thicker than high-k materials [2]. To solve this problem, we find lots of high-k materials as $HfO_2$, $ZrO_2$, $SiN_x$, $TiO_2$, $Al_2O_3$. Among the High-k materials, $Al_2O_3$ is one of the outstanding materials due to its properties are high dielectric constant ( ~9 ), relatively low leakage current, wide bandgap ( 8.7 eV ) and good device stability. For the realization of flexible displays, all processes should be performed at very low temperatures, but low temperature $Al_2O_3$ grown by sputtering showed deteriorated electrical performance. Further decrease in growth temperature induces a high density of charge traps in the gate oxide/channel. This study investigated the effect of growth temperatures of ALD grown $Al_2O_3$ layers on the TFT device performance. The ALD deposition showed high conformal and defect-free dielectric layers at low temperature compared with other deposition equipments [2]. After ITO was wet-chemically etched with HCl : $HNO_3$ = 3:1, $Al_2O_3$ layer was deposited by ALD at various growth temperatures or lift-off process. Amorphous InGaZnO channel layers were deposited by rf magnetron sputtering at a working pressure of 3 mTorr and $O_2$/Ar (1/29 sccm). The electrodes were formed with electron-beam evaporated Ti (30 nm) and Au (70 nm) bilayer. The TFT devices were heat-treated in a furnace at $300^{\circ}C$ and nitrogen atmosphere for 1 hour by rapid thermal treatment. The electrical properties of the oxide TFTs were measured using semiconductor parameter analyzer (4145B), and LCR meter.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
• /
• 2008.11a
• /
• pp.122-122
• /
• 2008

Recently, Metal/Alumina/Silicon-Nitride/Silicon-Oxide/Silicon (MANOS) structures are one of the most attractive candidates to realize vertical scaling of high-density NAND flash memory [1]. However, as ANO layers are miniaturized, negative and positive bias temperature instability (NBTI/PBTI), such as the flat band voltage shift, ${\Delta}V_{FB}$, the interfacial trap density increase, ${\Delta}D_{it}$, the gate leakage current, ${\Delta}I_G$. and the retention characteristics, in MONOS capacitors, becomes an important issue in terms of reliability. It is well known that tunnel oxide degradation is a result of the oxide and interfacial traps generation during FN (Fowler-Nordheim) stress [2]. Because the bias temperature stress causes an increase of both interfacial-traps and fixed oxide charge could be a factor, witch can degrade device reliability during the program and erase operation. However, few studies on NBTI/PBTI have been conducted on improving the reliability of MONOS devices. In this work, we investigate the effect of post-annealing gas on bias temperature instability (BTI), such as the flat band voltage shift, ${\Delta}V_{FB}$, the interfacial trap density shift, ${\Delta}I_G$ retention characteristics, and the gate leakage current characteristics of MANOS capacitors. MANOS samples annealed at $950^{\circ}C$ for 30 s by a rapid thermal process were treated via additional annealing in a furnace, using annealing gases $N_2$ and $N_2-H_2$ (2 % hydrogen and 98 % nitrogen mixture gases) at $450^{\circ}C$ for 30 min. MANOS samples annealed in $N_2-H_2$ ambient had the lowest flat band voltage shift, ${\Delta}V_{FB}$ = 1.09/0.63 V at the program/erase state, and the good retention characteristics, 123/84 mV/decade at the program/erase state more than the sample annealed at $N_2$ ambient.