• Title/Summary/Keyword: Rapid thermal process

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Effects of Cutting Angle on Kerf width and Edge Shape in the Hotwire Cutting of EPS Foam for the Case of Single-Sloped Cutting for VLM-s Process (VLM-s 공정을 위한 EPS 폼의 단순 경사 열선 절단시 절단 경사각이 절단폭과 모서리 형상에 미치는 영향)

  • 안동규;양동열
    • Journal of Welding and Joining
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    • v.21 no.5
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    • pp.525-533
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    • 2003
  • The dimensional accuracy and global roughness between successive layers of VLM-s, which is a new rapid prototyping process using hotwire cutter and EPS foam, depend significantly on the operating parameters of hotwire cutter. In the present study, the effect of cutting angle on the kerf width and edge shape in hotwire cutting of EPS foam for the case of single-sloped cutting with one cutting angle was investigated. Through single-sloped cutting tests, the modified relationship between kerf width and effective heat input, considering the effect of the cutting angle, and the relationship between the melted area and the cutting angle were obtained. In order to investigate the effect of cutting angles on the thermal field in EPS foam, transient heat transfer analyses using single-sloped volumetric heat flux model and locally-conformed mesh were performed. Through the comparison between experimental and numerical results, it was shown that the proposed analysis model is needed to estimate the three-dimensional temperature distribution of the EPS foam for the case of single-sloped hotwire cutting.

Analysis of Induction Heating according to Coil Shapes on the V-groove Weld Joint (V-groove를 가진 모재에서 코일 형상에 따른 유도가열 해석)

  • Ahn, Soo Deok;Cho, Young Tae;Jung, Yoon Gyo
    • Journal of the Korean Society for Precision Engineering
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    • v.32 no.2
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    • pp.167-172
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    • 2015
  • In order to prevent crack in thick weld zones, the preheating process such as induction and gas torch heating needs to be applied. Among them induction heating is the most effective heat source because it has rare thermal effect and very rapid heating characteristics. In this paper, when the induction heating method is used to improve arc welding, the temperature distribution and magnetic field density of the welding zones are analyzed by simultaneously solving heat transfer and electromagnetic field equation. In particular, cone and flat type coils are designed and induction heating effects of each type are compared to identify heating characteristics on a V-groove weld joint. As a result, a cone shape coil is more efficient in the preheating process. When induction heating and arc welding system is designed for thick plate with V-groove weld joint, the results in this paper could be applied.

Effect of Dopants on Cobalt Silicidation Behavior at Metal-oxide-semiconductor Field-effect Transistor Sidewall Spacer Edge

  • Kim, Jong-Chae;Kim, Yeong-Cheol;Kim, Byung-Kook
    • Journal of the Korean Ceramic Society
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    • v.38 no.10
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    • pp.871-875
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    • 2001
  • Cobalt silicidation at sidewall spacer edge of Metal-Oxide-Semiconductor Field-Effect Transistors (MOSFETs) with post annealing treatment for capacitor forming process has been investigated as a function of dopant species. Cobalt silicidation of nMOSFET with n-type Lightly Doped Drain (LDD) and pMOSFET with p-type LDD produces a well-developed cobalt silicide with its lateral growth underneath the sidewall spacer. In case of pMOSFET with n-type LDD, however, a void is formed at the sidewall spacer edge with no lateral growth of cobalt silicide. The void formation seems to be due to a retarded silicidation process at the LDD region during the first Rapid Thermal Annealing (RTA) for the reaction of Co with Si, resulting in cobalt mono silicide at the LDD region. The subsequent second RTA converts the cobalt monosilicide into cobalt disilicide with the consumption of Si atoms from the Si substrate, producing the void at the sidewall spacer edge in the Si region. The void formed at the sidewall spacer edge serves as a resistance in the current-voltage characteristics of the pMOSFET device.

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Fabrication of CIGS Thin Film Solar Cell by Non-Vacuum Nanoparticle Deposition Technique (비진공 나노입자 코팅법을 이용한 CIGS 박막 태양전지 제조)

  • Ahn, Se-Jin;Kim, Ki-Hyun;Yoon, Kyung-Hoon
    • 한국신재생에너지학회:학술대회논문집
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    • 2006.06a
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    • pp.222-224
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    • 2006
  • A non-vacuum process for $Cu(In,Ga)Se_2$ (CIGS) thin film solar cells from nanoparticle precursors was described in this work CIGS nanoparticle precursors was prepared by a low temperature colloidal route by reacting the starting materials $(CuI,\;InI_3,\;GaI_3\;and\;Na_2Se)$ in organic solvents, by which fine CIGS nanoparticles of about 20nm in diameter were obtained. The nanoparticle precursors were mixed with organic binder material for the rheology of the mixture to be adjusted for the doctor blade method. After depositing the mixture of CIGS with binder on Mo/glass substrate, the samples were preheated on the hot plate in air to evaporate remaining solvents ud to burn the organic binder material. Subsequently, the resultant (porous) CIGS/Mo/glass simple was selenized in a two-zone Rapid Thermal Process (RTP) furnace in order to get a solar ceil applicable dense CIGS absorber layer. Complete solar cell structure was obtained by depositing. The other layers including CdS buffer layer, ZnO window layer and Al electrodes by conventional methods. The resultant solar cell showed a conversion efficiency of 0.5%.

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VOID DEFECTS IN COBALT-DISILICIDE FOR LOGIC DEVICES

  • Song, Ohsung;Ahn, Youngsook
    • Journal of Surface Science and Engineering
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    • v.32 no.3
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    • pp.389-392
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    • 1999
  • We employed cobalt-disilicide for high-speed logic devices. We prepared stable and low resistant $CoSi_2$ through typical fabrication process including wet cleaning and rapid thermal process (RTP). We sputtered 15nm thick cobalt on the wafer and performed RTP annealing 2 times to obtain 60nm thick $CoSi_2$. We observed spherical shape voids with diameter of 40nm in the surface and inside $CoSi_2$ layers. The voids resulted in taking over abnormal junction leakage current and contact resistance values. We report that the voids in $CoSi_2$ layers are resulted from surface pits during the ion implantation previous to deposit cobalt layer. Silicide reaction rate around pits was enhanced due to Gibbs-Thompson effects and the volume expansion of the silicidation of the flat active regime trapped dimples. We confirmed that keeping the buffer oxide layer during ion implantation and annealing the silicon surface after ion implantation were required to prevent void defects in CoSi$_2$ layers.

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A Study on the Preheating Effect of Multi-Heat Sources using Laser Plasma in the Thermally Assisted Machining of a High-Melting-Point Material (고융점 소재의 열 보조 가공에서 레이저 -플라즈마 다중열원의 예열 효과에 대한 연구)

  • Lee, Choon-Man;Kim, Seong-Gyu
    • Journal of the Korean Society of Manufacturing Process Engineers
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    • v.18 no.10
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    • pp.93-98
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    • 2019
  • Recently, with the development of the aerospace and automotive industries, the demand for high-melting-point materials has increased. However, high-melting-point materials are difficult to cut through conventional machining methods. Thermally assisted machining (TAM) is a method for improving the machinability by preheating the materials. A laser, the most commonly used device for TAM, has high efficiency through local preheating but is not sufficient for maintaining a high preheating temperature due to rapid cooling. However, the use of multi-heat sources can supplement the disadvantage of a single heat source. The high preheating temperature can be maintained with a wide and deep heat-affected zone (HAZ) by multi-heat sources. The purpose of this study is to analyze the preheating effects of multi-heat sources using laser plasma. Thermal analysis and preheating experiments were carried out. As a result, the high preheating effect of multi-heat sources compared with a single heat source was verified.

The Crystallinity and Electrical Properties of SrBi2Ta2O9 Thin Films Fabricated by New Low Temperature Annealing (새로운 저온 열처리 공정으로 제조된 SrBi2Ta2O9 박막의 결정성 및 전기적 특성)

  • Lee, Kwan;Choi, Hoon-Sang;Jang, Yu-Min;Choi, In-Hoon
    • Korean Journal of Materials Research
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    • v.12 no.5
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    • pp.382-386
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    • 2002
  • We studied growth and characterization of $SrBi_2Ta_2O_9$ (SBT) thin films fabricated by low temperature process under vacuum and/or oxygen ambient. A metal organic decomposition (MOD) method based on a spin-on technique and annealing process using a rapid thermal annealing (RTA) method was used to prepare the SBT films. The crystallinity of a ferroelectric phase of SBT thin films is related to the oxygen partial pressure during RTA process. Under an oxygen partial pressure higher than 30 Torr, the crystallization temperature inducing the ferroelectric SBT phase can be lowered to $650^{\circ}C$. Those films annealed at $650^{\circ}C$ in vacuum and oxygen ambient showed good ferroelectric properties, that is, the memory window of 0.5~0.9 V at applied voltage of 3~7 V and the leakage current density of 1.80{\times}10^{-8}$ A/$\textrm{cm}^2$ at an applied voltage of 5V. In comparison with the SBT thin films prepared at 80$0^{\circ}C$ in $O_2$ ambient by furnace annealing process, the SBT thin films prepared at $650^{\circ}C$ in vacuum and oxygen ambient using the RTA process showed a good crystallization and electrical properties which would be able to apply to the virtul device fabrication precess.

Land Surface Temperatures of Industrial Complexes in Jeonnam Using Landsat 7 ETM+ Satellite Images (Landsat 7 ETM+ 위성영상을 이용한 전남산업단지의 지표온도)

  • Nguyen, Truong Linh;Tran, Quang Huy;Huh, Jungwon;Han, Dongyeob
    • Journal of the Korean Regional Science Association
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    • v.31 no.3
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    • pp.99-112
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    • 2015
  • Observation of land surface temperature in industrial areas is problematic, as it is not possible to construct a network of weather stations with sufficiently high density and continuous operation in such zones. Multiphase remote sensing data that cover a wide area and take a short time to process can enable the user to precisely and continuously measure the current and changing land surface temperatures in a certain region. Jeollanam-Do in South Korea is undergoing rapid industrialization, with the establishment of a number of industrial complexes, such as the Gwangyang Steelworks, Yeosu Industrial Complex, Yulchon Industrial complex, and Daebul Industrial Complex. To look into the properties of industrial complex's temperature, this study uses the thermal band of Landsat 7 ETM+ images acquired under thermal infrared wavelengths in order to calculate and compare the surface temperatures of the four above-named industrial complexes. From this, it is possible to obtain the basic information about industrial complex for environmental and natural resource management, which will aid industrial complex planners in developing methods of addressing environmental problems.

Effects of annealing temperature on structural and optical properties of CdS Films prepared by RF magnetron sputtering

  • Hwang, Dong-Hyeon;An, Jeong-Hun;Son, Yeong-Guk
    • Proceedings of the Korean Vacuum Society Conference
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    • 2010.08a
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    • pp.233-233
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    • 2010
  • CdS thin films were deposited on glass substrates by R.F. magnetron sputtering method and some of the samples were treated by rapid thermal annealing (RTA) process. Effects of thermal annealing on structural and optical properties were investigated at different temperatures ranging from 100 to $600^{\circ}C$. The crystallographic structure of the films and the size of the crystallites in the films were studied by X-ray diffraction. The crystallite sizes were found to increase, and the X-ray diffraction patterns were seen to sharpen by annealing. Optical properties of the films were calculated using the envelope method and the photoluminescence measurements. The optical properties of the films were seen to be dependent on the film thicknesses. The energy gap of the films was found to decrease by annealing. The band edge sharpness of the optical absorption was seen to oscillate by thermal annealing. Annealing over $400^{\circ}C$ was seen to degrade the optical properties of the film. The best annealing temperature for the films was found to be $400^{\circ}C$ from the optical properties. It is observed that the CdS film annealed at $400^{\circ}C$ reveals the strongest UV emission intensity and narrowest full width at half maximum among the temperature ranges studied. The enhanced UV emission from the film annealed at $400^{\circ}C$ is attributed to the improved crystalline quality of CdS thin film due to the effective relaxation of residual compressive stress and achieving maximum grain size. The results show that heat treatments under optimal annealing condition can provide significant improvements in the properties of CdS thin films.

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Poly(Imide) Separator Functionalized by Melamine Phosphonic Acid for Regulating Structural and Thermal Stabilities of Lithiumion Batteries

  • Ye Jin Jeon;Juhwi Park;Taeeun Yim
    • Journal of Electrochemical Science and Technology
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    • v.15 no.3
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    • pp.365-372
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    • 2024
  • As the energy density of lithium-ion batteries (LIBs) continues to increase, various separators are being developed to with the aim of improving the safety performance. Although poly(imide) (PI)-based separators are widely used, it is difficult to control their pore size and distribution, and this may further increase the risk associated. Herein, a melamine phosphonic acid (MP)-coated PI separator that can effectively control the pore structure of the substrate is suggested as a remedy. After the MP material is embedded into the PI separator with a simple one-step casting process, it effectively clogs the large pores of the PI separator, preventing the occurrence of internal short circuits during charging. It is anticipated that the MP material can also suppress rapid thermal runaway upon cycling due to its ability to reduce the internal temperature of the LIB cell caused by the desirable endothermic behavior around 300℃. According to experiments, the MP-coated PI separator not only decreases the thermal shrinkage rate better than commercial poly(ethylene) (PE) separators but also exhibits a desirable Gurley number (109.6 s/100 cc) and electrolyte uptake rate (240%), which is unique. The proposed separator is electrochemically stable in the range 0.0-5.0 V (vs. Li/Li+), which is the typical working potential of conventional electrode materials. In practice, the MP-coated PI separator exhibits stable cycling performance in a graphite-LiNi0.83Co0.10Mn0.07O2 full cell without an internal short circuit (retention: 90.3%).