• Journal of the Korean Society of Manufacturing Process Engineers
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• v.19 no.5
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• pp.105-110
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• 2020

The global battery market is rapidly growing due to the development of vehicles(EV) and wireless electronic products. In particular logistics robots, which hielp to produce EVs, have attracted much interest in research in Korea Because logistics sites and factories operate continuously for 24 hours, the technology that can dramatically increase the operation time of the logistics equipment is rapidly developing, and various high-level technologies are required for the batteries used in. for example, logistics robots. These required technologies include those that enable rapid battery charging as well wireless charging to charge batteries while moving. The development of these technologies, however, result in increasing explosions and topical accidents involving rapid charging batteries These accidents due to the thermal shock caused by the heat generated during the charging of the battery cell. In this study, a performance evaluation of a heat dissipation design using infrared thermal imaging was performed on an energy storage systrm(Ess) applied with an internal heat conduction cooling method using a heating plate.

• Journal of the Korean Ceramic Society
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• v.56 no.5
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• pp.468-473
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• 2019

This study focused on manufacturing an inorganic insulation material set with various amounts of calcium-sulfoaluminate (CSA) (hauyne) content for enhancing both workability (demolding, handling) and the high thermal insulating property. To carry out the experiment, the amounts of CSA utilized were 5%, 10%, 15%, and 20%, with anhydrous gypsum added in equal proportion to produce a stable formation. As the content of CSA increased, a sinking phenomenon occurred because of the hydration reaction from the slurry, so it was difficult to utilize a retarder normally used in the cement manufacturing process. However, an RCOOM surfactant was able to solve the local clumping problem from cement and CSA and obtain a rapid retarding effect, so it was included in this process at 0.3%. Furthermore, the cement fineness was not 7000 ㎠/g but rather 3300 ~ 4000 ㎠/g to prevent a rapid temperature increase in the slurry. The specific gravity of the sample manufactured with 20% CSA was approximately 0.11 g/㎤, and its thermal conductivity was 0.041 W/m·K, providing an excellent insulating property.

• Design & Manufacturing
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• v.15 no.3
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• pp.7-12
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• 2021

Plastic injection molds used for rapid heating and cooling must minimize surface damage due to friction and maintain excellent thermal and low electrical conductivity. Accordingly, various surface treatments are being applied. The properties of Al₂O₃ coating and DLC coating were compared to find the optimal surface treatment method. Al₂O₃ coating was deposited by thermal spray method. DLC films were deposited by sputtering process in room temperature and high temperature PECVD (Plasma enhanced chemical vapor deposition) process in 723 K temperature. For the evaluation of physical properties, the electrical and thermal conductivity including surface hardness, adhesion and wear resistance were analyzed. The electrical resistance of the all coated samples was showed insulation properties of 24 MΩ/sq or more. Especially, the friction coefficient of high temp. DLC coating was the lowest at 0.134.

• Proceedings of the Korean Society of Precision Engineering Conference
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• 2001.04a
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• pp.28-31
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• 2001

Recently, in order to satisfy the consumer's demand the life cycle and the lead-time of a product is to be shortened. It is thus important to reduce the time and cost in manufacturing trial products. Several techniques have been developed and successfully commercialized in the market RPM(Rapid Prototyping and Manufacturing). However, most commercial systems currently use resins or waxes as the raw materials. So, the limited mechanical strength for functional testing is regarded as an obstacle towards broader application of rapid prototyping techniques. To overcome this problems, high-speed machining technology is being investigated worldwide for rapid manufacturing and even for direct rapid tooling application. In this paper, some fundamental experiments and analyses are carried out to obtain the filling time, materials, method, and process parameters for HisRP process. HisRP is a combination process using high-speed machining technology with automatic filling. In filling process, Bi58-Sn alloy is chosen because of the properties of los-melting point, low coefficient of thermal expansion and enviromental friendship. Also the use of filling wire is of advantage in term of simple and flexible mechanism. Then the rapid manufacturing product, for example a skull, is machined for aluminum material by HisRP process with an automatic set-up device of 4-faces machining.

• Journal of the Korean Society for Precision Engineering
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• v.19 no.3
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• pp.88-94
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• 2002

Recently, the life cycle and the lead-time of a product are to be shortened in order to satisfy consumer's demand. It is thus important to reduce the time and cost in manufacturing trial products. Several technique have been developed and successfully commercialized in the market of RPM(Rapid Prototyping and Manufacturing). However, most commercial systems currently use resins or waxes as the raw materials. So, the limited mechanical strength for functional testing is regarded as an obstacle towards broader application of rapid prototyping techniques. To overcome these problems, high-speed machining technology is being investigated worldwide for rapid manufacturing and even for direct rapid tooling application. In this paper, some fundamental experiments and analyses are carried out to obtain the filling time, materials, method, and process parameters for HisRP(High-Speed RP) process. HisRP is a new RP process that is combined high-speed machining with automatic filling. In filling process, Bi58-Sn alloy is chosen as filling material because of the properties of low-melting point, low coefficient of thermal expansion and no harm to environment. Also the use of filling wire it if advantage since it needs simple and flexible mechanism. Then the rapid product, for example a skull, is manufactured for aluminum material by HisRP process with an automatic set-up device thor 4-faces machining.

• Proceedings of the Materials Research Society of Korea Conference
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• 2010.05a
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• pp.58.1-58.1
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• 2010

We have developed a novel crystallization process, where the crystallization temperature is lowered compared to the conventional RTA process and the metal contamination is lowered compared to the conventional VIC process. A very-thin a-Si film was deposited and crystallized at $550^{\circ}C$ for 3 h by the VIC process and then a thick a-Si film was deposited and crystallized by the RTA process at $680^{\circ}C$ for 5 min using the VIC poly-Si layer as a crystallization seed layer. The RTA crystallized temperature could be lowered up to $50^{\circ}C$, compared to RTA process alone. The poly-Si film appeared a needle-like growth front and relatively well-arranged (111) orientation. In addition, the Ni concentration in the poly-Si film was lowered to $3{\times}10^{17}\;cm^{-3}$ and that at the poly-Si/$SiO_2$ interface was lowered to $5{\times}10^{19}\;cm^{-3}$. The reduction in metal contamination could be greatly helpful to achieve a low leakage current in poly-Si TFT, which is the critical parameter for commercialization of AMOLED.

• Journal of the Institute of Electronics Engineers of Korea SD
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• v.45 no.8
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• pp.11-16
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• 2008

In this paper, firstly we made of the rapid thermal processor equipment with the specifically useful structure to measure wafer stress. Secondly we made of the laser interferometry to inspect the wafer surface curvature based on the large deformation theory. And then the wafer surface fringe image was obtained by experiment, and the full field stress distribution of wafer surface comes into view by signal processing with thining and pitch mapping. After wafer was ground by 1mm and polished from the back side to get easily deformation, and it was heated by three to four times thermal treatments at about 1000 degree temperature. Finally the severe deformation between wafer before and after the heat treatment was shown.

• Journal of the Korean Vacuum Society
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• v.12 no.3
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• pp.168-173
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• 2003

Recently, according to the rapid progress in Flat-panel-display industry, there has been a growing interest in the poly-Si process. Compared with a-Si, poly-Si offers significantly high carrier mobility, so it has many advantages to high response rate in Thin Film Transistors (TFT's). We have investigated a new process for the high temperature Solid Phase Crystallization (SPC) of a-Si films without any damages on glass substrates using thin film heater. because the thin film heater annealing method is a very rapid thermal process, it has very low thermal budget compared to the conventional furnace annealing. therefore it has some characteristics such as selective area crystallization, high temperature annealing using glass substrates. A 500 $\AA$-thick a-Si film was crystallized by the heat transferred from the resistively heated thin film heaters through $SiO_2$ intermediate layer. a 1000 $\AA$-thick $TiSi_2$ thin film confined to have 15 $\textrm{mm}^{-1}$ length and various line width from 200 to 400 $\mu\textrm{m}$ was used as the thin film heater. By this method, we successfully crystallized 500 $\AA$-thick a-Si thin films at a high temperature estimated above $850^{\circ}C$ in a few seconds without any thermal deformation of g1ass substrates. These surprising results were due to the very small thermal budget of the thin film heaters and rapid thermal behavior such as fast heating and cooling. Moreover, we investigated the time dependency of the SPC of a-Si films by observing the crystallization phenomena at every 20 seconds during annealing process. We suggests the individual managements of nucleation and grain growth steps of poly-Si in SPC of a-Si with the precise control of annealing temperature. In conclusion, we show the SPC of a-Si by the thin film heaters and many advantages of the thin film heater annealing over other processes

• Proceedings of the KIEE Conference
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• 1988.07a
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• pp.383-386
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• 1988

In MOS integrated circuits, annealing after oxidation process is necessary to improve physical properties of silicon dioxide. With subsequent annealing in inert gases such as nitrogen or argon, and excess silicon bond is allowed time to complete the oxidation and surface charge density is reduced. In this paper, we will present effects of the rapid thermal annealing on silicon dioxide. In order to evaluate characteristics of silicon dioxide, we analyzed C-V curve dependent on annealing time and temperature, and presented variation of fixed oxide charge.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.11 no.7
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• pp.535-540
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• 1998

Thin films of PLZT were prepared on indium tin oxide(ITO) coated glass substrates by sol-gel process and annealed by rapid thermal annealing(RTA) at $750^{\circ}C$ for 5 minutes. The crystal structure of PLZT thin films were investigated for a different Zr mol% content. XRD results showed that the crystallographic structure was transitted from tetragonal to rhombohedral structure as Zr mol% increased. Raman spectroscopy results showed that the bands of spectra became broader as the amount of Zr mol% increased and two crystal phase coexisted at 2/55/45 PLZT film. Raman spectroscopy was useful for crystal structure analysis of PLZT thin films.