Hole Mobility Enhancement in (100)- and (110)-surface of Ultrathin-body(UTB) Silicon-on-insulator(SOI) Metal Oxide Semiconductors Field Effect Transistor (Ultrathin-body SOI MOSFETs에서 면방향에 따른 정공의 이동도 증가)
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- Journal of the Korean Institute of Electrical and Electronic Material Engineers
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- v.20 no.11
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- pp.939-942
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- 2007