• Proceedings of the KIEE Conference
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• 1987.07a
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• pp.490-492
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• 1987

Urea-Sensor was fabricated by immobilizing urease on ISFET's gate using BSA(bovine serum albumin) and glutaraldehyde, and its characteristics were examined. This sensor showed approximately linear characteristic in the urea concentration range of $3{\times}10^{-5}-10^{-9}$ (g/ml). Fast response time was obtained and minute amounts of expensive enzyme were used in comparison to general electrode type biosensors.

• Journal of IKEEE
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• v.20 no.4
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• pp.435-438
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• 2016

HEVC CABAC binary arithmetic decoder operates in three decoding modes i.e. regular, bypass, and termination modes, where their decoding operations and time differ a lot. Furthermore, when renormalization occurs, its internal feedback loop induces large delay. In this paper, a binary arithmetic decoder was designed to solve this problem. In advance, it checks all range values with possible renormalization. When renormalization occurs, it immediately updates range value and finishes all calculation in a cycle. When implemented in 0.18 um process technology, its maximum operating frequency and gate counts are 215 MHz and 5,423 gates, respectively.

• IEIE Transactions on Smart Processing and Computing
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• v.5 no.1
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• pp.10-16
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• 2016

In this paper, a design for a fully digital voltage sensor using a 32-nm fin-type field-effect transistor (FinFET) is presented. A new characteristic of the double gate p-type FinFET (p-FinFET) is examined and proven appropriate for sensing voltage variations. On the basis of this characteristic, a novel technique for designing low-power voltage-to-time converters is presented. Then, we develop a digital voltage sensor with a voltage range of 0.7 to 1.1V at a 50-mV resolution. The performance of the proposed sensor is evaluated under a range of voltages and process variations using Simulation Program with Integrated Circuit Emphasis (SPICE) simulations, and the sensor is proven capable of operating under ultra-low power consumption, high linearity, and fairly high-frequency conditions (i.e., 100 MHz).

• Journal of Korea Society of Industrial Information Systems
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• v.6 no.3
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• pp.123-127
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• 2001

The prediction method of the parameter C/sub gs/ of CMOS transistor is proposed by calculating the mobil charge in inversion layer of COMS transistor. This parameter C/sub gs/ decided on the cutoff frequency in MOS transistor in RF range and coupled input and output. This parameter C/sub gs/ in RF range is very important parameter in small signal circuit model. This proposed method is contributed to developing software of extracting parameter value in equivalent circuit model. The method provide the important information to construct a RF nonlinear model for multifinger gate MOSFET. This method will be very valuable to develop a large signal MOSFET model for nonlinear RF IC design.

• Proceedings of the KIEE Conference
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• 2008.10b
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• pp.520-521
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• 2008

This paper describes a low voltage, low-power CMOS buck DC/DC converter, which has a simple common-gate current sensing circuit. It consumes low power because it includes less transistors than other converters which use operational amplifiers for current sensing. The designed DC-DC converter is fabricated in a 0.18um CMOS technology. A maximum efficiency of 88% has been obtained with the proposed circuit. It has $2V{\sim}3.7V$ input voltage range, $1V{\sim}2.5V$ output voltage range and maximum output current of 1000mA.

• Proceedings of the IEEK Conference
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• 2002.07b
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• pp.759-762
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• 2002

In this paper, a voltage-controlled linear variable resistor (VCLVR) using a floating-gate MOS-FET (FG-MOSFET) is proposed. The proposed-circuit is the grounded VCLVR consists of only an ordinary MOSFET and an FG-MOSFET. The advantage of the proposed VCLVR are low-voltage and wide-input range. Next, as applications, a floating-node voltage controlled variable resistor and an operational transconductance amplifier using the proposed VCLVRs are proposed. The performance of the proposed circuits are characterized through HSPICE simulations with a standard 0.6 ${\mu}$m CMOS process. simulations of the proposed VCLVR demonstrate a resistance value of 40 k$\Omega$ to 338 k$\Omega$ and a THD of less than 1.1 %.

• Journal of the Korean Society for Precision Engineering
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• v.12 no.12
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• pp.109-119
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• 1995

A driveline incorporating universal joints when driving through an angle can excite various components in a vehicle with second order excitation of torsional and bending vibrations, being transmitted either audibly(noise), or physically(vibration). For a certain range of vehicle dpeed noises can be radiated from the cab wall, in which resonances occur by the excitations transmitted from the driveline as a vibration source. In this paper, the excitation mechanism of cab noises is studied especially for the vehicle speed range of 65 .approx. 75 km/h through the simulation for torsional vibrations of the driveline and for bending vibrations of the cab of an 11 Ton grade Cargo Truck, and verified additionally by vibration and noise measurements. As a result, it is found that the uncomfortable noises in the cab are caused mainly by the abrupt increase of the joint angle of driveline near the axle differential resulted from the excessive clearance alignment of the leaf spring gate.

• Proceedings of the Korea Institute of Convergence Signal Processing
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• 2000.12a
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• pp.41-44
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• 2000

In this paper, the dedicated short range communication(DSRC) system which used as the automatic gate system(AGS) Donga Univ. RRC developed is applied to yard automation. We proposed the communication algorithm of between roadside equipment(RSE) and on-board equipment(OBE). We analyzed transmitted and received information, classification and feature of between OBE and RSE for automation of the container yard and unloading system.

• Proceedings of the KIEE Conference
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• 2007.11a
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• pp.79-80
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• 2007

A high performance organic phototransistor with dynamic range of 120 dB is demonstrated by employing soluble pentacene as a photo-sensing layer. The organic phototransistor used suspended source/drain (SSD) electrode structure, which provides a dark current level of ${\sim}10^{-14}$ A at positive gate bias. Under a steady-state illumination, the organic phototransistor exhibited a current modulation of $10^6$ compared to dark to give a dynamic range of 120 dB. These results suggest that the organic phototransistor based on TIPS pentacene can be a new premising candidate for low-cost and high-performance photo-sensing element for digital imaging applications.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2006.06a
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• pp.194-195
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• 2006

Aluminum oxide films directly grown on n-type 6H-SiC(0001) substrates were fabricated by RF magnetron sputtering system. Metal-insulator-semiconductor(MIS) C-V properties with aluminum oxide thin films showed hysteresis and f1at band voltage shift. The dielectric constant of the film calculated from the capacitance at the accumulation region was about 5. Typical gate leakage current density of film at room temperature was the order of $10^{-9}\;A/cm^2$ at the range of within 2MV/cm. The breakdown did not occur at the film within the measurement range.