• Journal of the Microelectronics and Packaging Society
• /
• v.30 no.3
• /
• pp.73-77
• /
• 2023

In this study, we developed a Multi-level FeRAM (Ferroelectrics random access memory) device utilizing different ferroelectric materials and analyzed its operation through C-V analysis using simulations. To achieve Multi-level operation, we proposed an MFM (Multi-Ferroelectric Material) structure by depositing two different ferroelectric materials with distinct properties horizontally on the same bottom electrode and subsequently adding a gate electrode on top. By analyzing C-V peaks based on the polarization phenomenon occurring under different voltage conditions for the two materials, we confirmed the feasibility of achieving Multi-level operation, where either one or both of the materials can be polarized. Furthermore, we validated the process for implementing the proposed structure using semiconductor fabrication through process simulations. These results signify the significance of the new structure as it allows storing multiple states in a single memory cell, thereby greatly enhancing memory integration.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
• /
• v.25 no.3
• /
• pp.182-186
• /
• 2012

Resistance-change Random Access Memory(ReRAM) memory, which utilizes electrochemical control of metal in thin films of solid electrolyte, shows great promise as a future solid state memory. The technology utilizes the electrochemical formation and removal of metallic pathways in thin films of solid electrolyte. Key attributes are low voltage and current operation, excellent scalability, and a simple fabrication sequence. In this work, we investigated the nature of thin films formed by photo doping of $Ag^+$ ions into chalcogenide materials for use in solid electrolyte of Resistance-change RAM devices and switching characteristics according to field-effect.

• Korean Journal of Materials Research
• /
• v.32 no.9
• /
• pp.384-390
• /
• 2022

A spin coating process for RRAM, which is a TiN/TiO₂/FTO structure based on a PTC sol solution, was developed in this laboratory, a method which enables low-temperature and eco-friendly manufacturing. The RRAM corresponds to an OxRAM that operates through the formation and extinction of conductive filaments. Heat treatment was selected as a method of controlling oxygen vacancy (V_O), a major factor of the conductive filament. It was carried out at 100 ℃ under moisture removal conditions and at 300 ℃ and 500 ℃ for excellent phase stability. XRD analysis confirmed the anatase phase in the thin film increased as the heat treatment increased, and the Ti³⁺ and OH- groups were observed to decrease in the XPS analysis. In the I-V analysis, the device at 100 ℃ showed a low primary SET voltage of 5.1 V and a high ON/OFF ratio of 10⁴. The double-logarithmic plot of the I-V curve confirmed the device at 100 ℃ required a low operating voltage. As a result, the 100 ℃ heat treatment conditions were suitable for the low voltage driving and high ON/OFF ratio of TiN/TiO₂/FTO RRAM devices and these results suggest that the operating voltage and ON/OFF ratio required for OxRAM devices used in various fields under specific heat treatment conditions can be compromised.

• Transactions on Electrical and Electronic Materials
• /
• v.12 no.6
• /
• pp.258-261
• /
• 2011

A ferroelectric $(Bi,La)_4Ti_3O_{12}$ (BLT) thin film fabricated by the pulsed-DC sputtering method was evaluated on a cell structure to check its compatibility to high density ferroelectric random access memory (FeRAM) devices. The BLT composition in the sputtering target was $Bi_{4.8}La_{1.0}Ti_{3.0}O_{12}$. Firstly, a BLT film was deposited on a buried Pt/$IrO_x$/Ir bottom electrode stack with W-plug connected to the transistor in a lower place. Then, the film was finally crystallized at $700^{\circ}C$ for 30 seconds in oxygen ambient. The annealed BLT layer was found to have randomly oriented and small ellipsoidal-shaped grains (long direction: ~100 nm, short direction: ~20 nm). The small and uniform-sized grains with random orientations were considered to be suitable for high density FeRAM devices.

• The Journal of Society for e-Business Studies
• /
• v.8 no.3
• /
• pp.165-176
• /
• 2003

Instead of existing cell phones, PDAs are observed as leading wireless Internet devices recently Numerous applications are developed by extended usage of PDAs and it should be installed appropriately according to devices. Furthermore, when battery is discharged, all data stored in RAM(Random Access Memory) becomes obsolete. So it should be recovered or reinstalled from flash memory, backup media or something. In this paper, we present an automatic application installation system(PAIS : PDA Automatic Installation System) to solve problems that users have to install applications by themselves whenever it is necessary. With this system, users feel comfortable by saving time and effort to install each applications and application development companies save cost needed to make materials illustrating installation process. Consequently PAIS may flourish wireless Internet business.

• Proceedings of the Korean Vacuum Society Conference
• /
• 2013.02a
• /
• pp.478-478
• /
• 2013

Resistance-change Random Access Memory (ReRAM) memory, which utilizes electrochemical control of metal in thin films of solid electrolyte, shows great promise as a future solid state memory. The technology utilizes the electrochemical formation and removal of metallic pathways in thin films of solid electrolyte. Key attributes are low voltage and current operation, excellent scalability, and a simple fabrication sequence. In this work, we investigated the nature of thin films formed by photo doping of Ag+ ions into chalcogenide materials for use in solid electrolyte of Resistance-change RAM devices and switching characteristics.

• Journal of KIISE:Computer Systems and Theory
• /
• v.36 no.3
• /
• pp.171-180
• /
• 2009

Slowly, but surely, we are seeing the emergence of a variety of embedded systems that are employing Storage Class RAM (SCRAM) such as FeRAM, MRAM and PRAM, SCRAM not only has DRAM-characteristic, that is, random byte-unit access capability, but also Disk-characteristic, that is, non-volatility. In this paper, we propose a new software architecture that allows SCRAM to be used both for main memory and for secondary storage simultaneously- The proposed software architecture has two core modules, one is a SCRAM driver and the other is a SCRAM manager. The SCRAM driver takes care of SCRAM directly and exports low level interfaces required for upper layer software modules including traditional file systems, buddy systems and our SCRAM manager. The SCRAM manager treats file objects and memory objects as a single object and deals with them in a unified way so that they can be interchanged without copy overheads. Experiments conducted on real embedded board with FeRAM have shown that the SCRAM driver indeed supports both the traditional F AT file system and buddy system seamlessly. The results also have revealed that the SCRAM manager makes effective use of both characteristics of SCRAM and performs an order of magnitude better than the traditional file system and buddy system.

• The Transactions of the Korea Information Processing Society
• /
• v.4 no.3
• /
• pp.649-658
• /
• 1997

Database management systems(DMBS)using bolatile memory shluld have a recovery function to protect data against system failutes.Recovery requires much overhead in transaction proessing and is one of the great factors that deteriorate the system performance.Recently, there have been a lot of studies on database systems with nonbolatile memory to enhance the performance.A nonbolatile memory called DFeRAM is one of the promising memory devices of the future technology, but this device does not support fine-franularity licking.In this paper, we present a dual plane FeRAM(DFeRAM)architecture to support the fine-granularity locking.We also propose a recovery algorithm for the database system with the DFeRAM based on a shadow paging methed.In order to analze the performance of the proposed algorithm, we present an analytical model and analyze the performance using the moedl.

• JSTS:Journal of Semiconductor Technology and Science
• /
• v.14 no.1
• /
• pp.48-52
• /
• 2014

In this paper, scaling down characteristics of vertical channel phase random access memory are investigated with device simulator and finite element analysis simulator. Electrical properties of select transistor are obtained by device simulator and those of phase change material are obtained by finite element analysis simulator. From the fusion of both data, scaling properties of vertical channel phase change random access memory (VPCRAM) are considered with ITRS roadmap. Simulation of set reset current are carried out to analyze the feasibility of scaling down and compared with values in ITRS roadmap. Simulation results show that width and length ratio of the phase change material (PCM) is key parameter of scaling down in VPCRAM. Thermal simulation results provide the design guideline of VPCRAM. Optimization of phase change material in VPCRAM can be achieved by oxide sidewall process optimization.

• Proceedings of the Korean Vacuum Society Conference
• /
• 2013.02a
• /
• pp.410-410
• /
• 2013

Next-generation nonvolatile memory (NVM) has attracted increasing attention about emerging NVMs such as ferroelectric random access memory, phase-change random access memory, magnetic random access memory and resistance random access memory (RRAM). Previous studies have demonstrated that RRAM is promising because of its excellent properties, including simple structure, high speed and high density integration. Many research groups have reported a lot of metal oxides as resistive materials like TiO2, NiO, SrTiO3 and ZnO [1]. Among them, the ZnO-based film is one of the most promising materials for RRAM because of its good switching characteristics, reliability and high transparency [2]. However, in many studies about ZnO-based RRAMs, there was a problem to get lower current level for reducing the operating power dissipation and improving the device reliability such an endurance and an retention time of memory devices. Thus in this paper, we investigated that highly reproducible bipolar resistive switching characteristics of W doped ZnO RRAM device and it showed low resistive switching current level and large ON/OFF ratio. This may be caused by the interdiffusion of the W atoms in the ZnO film, whch serves as dopants, and leakage current would rise resulting in the lowering of current level [3]. In this work, a ZnO film and W doped ZnO film were fabricated on a Si substrate using RF magnetron sputtering from ZnO and W targets at room temperature with Ar gas ambient, and compared their current levels. Compared with the conventional ZnO-based RRAM, the W doped ZnO ReRAM device shows the reduction of reset current from ~$10^{-6}$ A to ~$10^{-9}$ A and large ON/OFF ratio of ~$10^3$ along with self-rectifying characteristic as shown in Fig. 1. In addition, we observed good endurance of $10^3$ times and retention time of $10^4$ s in the W doped ZnO ReRAM device. With this advantageous characteristics, W doped ZnO thin film device is a promising candidates for CMOS compatible and high-density RRAM devices.