• Journal of Korean Society of Transportation
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• v.20 no.2
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• pp.149-159
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• 2002

The performance of two single-barrier three-phase control systems at diamond interchanges was evaluated for various traffic conditions. To emulate the actuated signal control, hardware-in-the-loop system combined with CORSIM simulation program was used. Two performance measures, average delay and total stops, were used for the evaluation process. Results showed that the two three-phase systems gave similar performance in terms of average delay, but not stops. The delay performance of each phasing system was generally dependent on the traffic pattern and ramp spacing. However, there was a distinct movement preference for each phasing system. The total stops decreased as the spacing increased, and it was the most sensitive variable that can differentiate between the two three-phase systems. It was also shown that the hardware-in-the-loop control could be a good method to overcome the limitations of current simulation technology.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.21 no.12
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• pp.1083-1089
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• 2008

We studied the dielectric characteristics of low-k SiOCH thin films by Ellipsometry. The SiOCH thin films were prepared by deposition of BTMSM precursors on p-Si wafer by CCP-PECVD method. The nano-porous structural organic/inorganic hybrid-type of SiOCH thin films correlated directly to the formation of low dielectrics close to pore(k=1). The structural groups including highly dense pores in SiOCH thin films originated the anisotropic geometry type of network structure directing to complex refractive characteristics of SiOCH single layer on the p-Si wafer. The linearly polarized beam of Xe-ramp in the range from 190 nm to 2100 nm introduced to the surface of SiOCH thin film, and the reflected beam was Elliptically polarized by complex refractive coefficients of SiOCH dipole groups. The amplitude variation $\Psi$ and phase variation $\Delta$ of the relative reflective coefficients between perpendicular and parallel components to the incident plane were measured by Ellipsometry. The complex optical constants n and k as well as the dielectric constant and thickness of SiOCH thin films were driven by the measured value of $\Psi$ and $\Delta$.

• Journal of Electrical Engineering and Technology
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• v.10 no.5
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• pp.1989-2000
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• 2015

In this paper, digital peak current mode control for single phase H-bridge inverters is developed and implemented. The digital peak current mode control is achieved by directly controlling the PWM signals by cycle-by-cycle current limitation. Unlike the DC-DC converter where the output voltage always remains in the positive region, the output of DC-AC inverter flips from positive to negative region continuously. Therefore, when the inverter operates in negative region, the control should be changed to valley current mode control. Thus, a novel control logic circuit is required for the function and need to be analyzed for the hardware to track the sinusoidal reference in both regions. The problem of sub-harmonic instability which is inherent with peak current mode control is also addressed, and then proposes the digital slope compensation in constant-sloped external ramp to suppress the oscillation. For unipolar PWM switching method, an adaptive slope compensation in digital manner is also proposed. In this paper, the operating principles and design guidelines of the proposed scheme are presented, along with the performance analysis and numerical simulation. Also, a 200W inverter hardware prototype has been implemented for experimental verification of the proposed controller scheme.

• Proceedings of the KIEE Conference
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• 1988.11a
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• pp.147-150
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• 1988

Since the integration level of VLSI circuits progresses very quickly, a highly reliable thin $SiO_2$ film is required to fabricate a small-geometry MOS device. In the present study we have attempted to eliminate the failure-causing defects that develop in thin oxide films during the oxidation step by performing a long-time preoxidation and postoxidation annealing. The TDDB test and the copper decoration method were used to calculate the oxide defects density of MOS device. The dielectric reliability of high-quality thin oxides have been studied by using the time-zero-dielectric-breakdown (ramp-voltage-stressed I-V) and time-dependent-dielectric -breakdown (Constant-stressed I-V) tests. Failure times against temperature and electric field are examined and acceleration factors are abtained for each parameter. Based on the data obtained, breakdown wearout limitation for thin oxide films is estimated.

• Transactions on Electrical and Electronic Materials
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• v.8 no.5
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• pp.215-217
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• 2007

Recently, color reproduction properties have attracted lots of attention with mass production of LCD especially corresponding to TV application and achievement of color reproduction properties such as CRT have been considered one of technical goals for high quality display. However, revision of the color reproduction properties only with CF(color filter) have fundamental limitations and resultant decrease in the transmittance of panel causes demand on high brightness of BL(Back Light). In this paper, we present such a method in which by optimization of original light spectrum from the BL source will improves the color reproduction properties corresponding to them of the CRT. When the intensity of RED and Green-Blue from ramp is revised densely, the characteristics different from CCFL(Cold Cathode Fluorescent Lamp) used before become added so that about 11 % of the color reproduction properties is improved compare to the existing LCD panel.

• The Transactions of The Korean Institute of Electrical Engineers
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• v.56 no.12
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• pp.2189-2195
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• 2007

In this paper, we propose a newly developed selective reset waveform of a ac PDP using the wide erase pulse technique with the control of address bias voltage. Although it is generally understood that the wide pulse erasing methode shows the narrow driving margin in an opposite discharge type ac PDP, we could obtain a moderate driving margin in a 3-electrode surface discharge type ac PDP. The obtained driving margin shows a strong dependency on the sustain voltage and the address bias voltage. The lower the sustain and the address bias voltage, the wider the driving margin. The pulse width of the proposed waveform is only $10{\mu}s$, which gives additional time to the sustain period, hence increases the brightness. The brightness and contrast ratio increase about 20% together comparing to the conventional ramp type selective reset waveform with the driving scheme of 10 subfield ADS method. The driving margin was measured with the line by line addressed pattern on the white test panel of 2inch diagonal size and the discharge gas was Ne+Xe4%, 400torr.

• Journal of the Korean Society of Propulsion Engineers
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• v.8 no.4
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• pp.76-83
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• 2004

A Propulsion System of the CRW(Canard Rotor Wing) type UAV(Unmanned Aerial Vehicle) was composed of the turbojet engine to generate the propulsive exhaust gas, and the duct system including main and rotary ducts, the nozzle subsystem including main and tip jet nozzle for three flight modes such as lift/landing mode, low speed transition flight mode and high speed forward flight mode. Transient simulation performance utilized the ICV (Inter-component volume) method and simulated using the SIMULINK. Transient performance analysis was performed on 3 cases. Fuel flow schedules to accelerate from Idle to maximum rotational speed were divided into the step increase of the most severe case and ramp increase cases to avoid the overshoot of turbine inlet temperature, and variations of thrust and the turbine inlet temperature were investigated in some transient analysis cases.

• Journal of the Korean Society of Propulsion Engineers
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• v.6 no.2
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• pp.65-74
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• 2002

Optimal supersonic diffuser shape of integrated rocket ramjet engine was derived which maximizes the total pressure recovery. Mass flux is considered as a design constraint and the second oblique shock angle of the external ramp, the cowl-lip angle and the throat area are selected as design variables. Refined response surface method through design space transformation technique was developed and employed, and high confidence level of the regression model could be obtained. Genetic algorithm was implemented for both system optimizer and subspace regression model optimization. Virtual nozzle was located at the end of throat to adjust the back pressure. With only 20 aerodynamic analyses, optimal supersonic diffuser shape which has 14% improved total pressure recovery characteristics was successfully designed.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2002.05a
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• pp.149-152
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• 2002

If the ambient temperature rises for AC PDP, some of the discharge cells are turned off because of the misfiring during address period. Particularly, the misfiring of the 'last scan line is more serious than that of the first. In order to compensate the misfiring in such that case, different addressing voltage is applied at each cell such as progressively increasing pulse voltage instead of constant one. As a result, the addressing time and discharge charge of the last scan line have become similar to those of the first scan line and the phenomenon of misfiring has disappeared.

• Proceedings of the KIEE Conference
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• 1993.07b
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• pp.1265-1267
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• 1993

The switching and the retention characteristics with the injection conditions(pulse height and pulse width) were investigated in the nonvolatile MNOS memories with thin oxide layer of $23{\AA}$ thick. The shift of flatband voltage was measured using the fast ramp C-V method and experimental results were analized using the previously developed models. It was shown that the experimental results were described quit well by the trap-assisted and modified Fowler-Nordheim tunneling models for the voltage pulse of $15V{\sim}19V,\;24V{\sim}25V$, respectively. However, the direct tunneling model was agreement with experimental values in all range of pulse height. As increasing the initial shift of the flatband voltage, the decay rate was increased. But for the same initial shift of the flatband voltage, the decay rate was smaller for low and long pulse than for high and short one.