• Bulletin of the Korean Chemical Society
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• 제30권12호
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• pp.3045-3048
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• 2009

Graphene sheets formed by the reaction of carbon monoxide (CO) with aluminum sulfide ($Al_2S_3$) at reaction temperatures ${\leq}$ 800 $^{\circ}$ were characterized by X-ray diffraction (XRD), Raman spectroscopy, and high-resolution transmission electron microscopy (HRTEM). The graphene sheets, formed as CO was reduced to gaseous carbon by the reaction with $Al_2S_3$, in the temperature range 800 - 1100 $^{circ}C$, did not exhibit their characteristic XRD peaks because of the small number of graphene layers and/or low crystallinity of graphene sheets. Raman spectra of graphene sheets showed that the intensity ratio of the D band to the G band decreased and the 2D band was shifted to higher frequencies with increasing reaction temperature, indicating that the number of graphene layers increased with increasing reaction temperature.

• Bulletin of the Korean Chemical Society
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• 제30권4호
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• pp.803-809
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• 2009

Notable blue shifts of the ν2 $C{\equiv}N$ stretching, $_{v4}$ C-C stretching and $_{v8}$ CCN deformation bands of $CD_3CN$ are observed upon solvation of $InCl_3$, resulting from the donor-acceptor interaction. The Raman spectrum in the $_{v2}$ region shows further details; at least two new bands emerge on the blue side of the $_{v2}$ band of free $CD_3CN$, whose relative intensities vary with concentration, suggesting that there exist at least two different cationic species in the solution. The strong hydrogen bonds formed between the methyl group and ${InCl_4}^-$ result in a large band appearing on the red side of the ν1 $CD_3$ symmetric stretching band. The solvation number of $InCl_3$, determined from the Raman intensities of the $C{\equiv}N$ stretching bands for free and coordinated $CD_3CN$, increases from $\sim$1.5 to $\sim$1.8 with decreasing concentration.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 한국전기전자재료학회 2001년도 추계학술대회 논문집
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• pp.533-536
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• 2001

Single crystal cubic silicon carbide(3C-SiC) thin film were deposited on Si(100) substrate up to a thickness of 4.3 $\mu\textrm{m}$ by APCVD(atmospheric pressure chemical vapor deposition) method using hexamethyildisilane(HMDS) at 1350$^{\circ}C$. The HMDS flow rate was 0.5 sccm and the carrier gas flow rate was 2.5 slm. The HMDS flow rate was important to get a mirror-like. The growth rate of the 3C-SiC films was 4.3 $\mu\textrm{m}$/hr. The 3C-SiC epitaxical layers on Si(100) were characterized by XRD(X-ray diffraction), raman scattering and RHEED(reflection high-energy electron diffraction), respectively The 3C-SiC distinct phonons of TO(transverse optical) near 796 cm$\^$-1/ and LO(longitudinal optical) near 974${\pm}$1 cm$\^$-1/ were recorded by raman scattering measurement. The deposition films were identified as the single crystal 3C-SiC phase by XRD spectra(2$\theta$=41.5$^{\circ}$). Also, with increase of films thickness, RHEED patterns gradually changed from a spot pattern to a streak pattern

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 한국전기전자재료학회 2002년도 춘계합동학술대회 논문집
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• pp.30-34
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• 2002

Single crystal 3C-SiC(cubic silicon carbide) thin-films were deposited on Si(100) wafers up to a thickness of 4.3 ${\mu}m$ by APCVD method using HMDS(hexamethyldisilane) at $1350^{\circ}C$. The HMDS flow rate was 0.5 sccm and the carrier gas flow rate was 2.5 slm. The HMDS flow rate was important to get a mirror-like crystal surface. The growth rate of the 3C-SiC films was 4.3 ${\mu}m$/hr. The 3C-SiC epitaxial films grown on Si(100) were characterized by XRD, AFM, RHEED, XPS and raman scattering, respectively. The 3C-SiC distinct phonons of TO(transverse optical) near 796 $cm^{-1}$ and LO(longitudinal optical) near $974{\pm}1cm^{-1}$ were recorded by raman scattering measurement. The heteroepitaxially grown films were identified as the single crystal 3C-SiC phase by XRD spectra($2{\theta}=41.5^{\circ}$).

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 한국전기전자재료학회 2007년도 하계학술대회 논문집 Vol.8
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• pp.357-358
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• 2007

Raman spectra of poly (polycrystalline) 3C-SiC thin films, which were deposited on the oxidized Si substrate by APCVD, have been measured. They were used to study the mechanical characteristics of poly 3C-SiC grown in various temperatures. TO and LO modes of 2.0 m poly 3C-SiC grown at 1180 C occurred at 794.4 and $965.7\;cm^{-1}$. Their FWHMs (full width half maximum) were used to investigate the stress and the disorder of 3C-SiC. The broad FWHM can explain that the crystallinity of 3C-SiC grown at 1180 C becomes poly crystalline instead of the disordered crystal. The ratio of intensity $I_{(LO)}/I_{(TO)}$ 1.0 means that the crystal defect of 3C-SiC/$SiO_2$/Si is small. The biaxial stress of poly 3C-SiC was obtained as 428 MPa. In the interface of 3C-SiC/$SiO_2$, the phonon mode of C-O bonding appeared at $1122.6\;cm^{-1}$. The phonon modes related to D and G bands of C-C bonding were measured at 1355.8 and $1596.8\;cm^{-1}$ respectively.

• Journal of the Korean Ceramic Society
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• 제52권2호
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• pp.165-170
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• 2015

We employed the high-pressure high temperature (HPHT) process to enhance the colors of natural sapphires to obtain a vivid blue. First, we analyze the content of the coloring agent $Fe_2O_3$ using the wavelength dispersive X-ray fluorescence (WD-XRF) method. The HPHT procedure operates under 1 GPa at various temperatures of 1700, 1750, and $1800^{\circ}C$ for 5 minutes using a cubic press. We determine the color changes using the optical microscopic images, UV-VIS near-infrared (NIR) spectra, micro-Raman spectra, and Fourier transform-infrared (FT-IR) spectra for all sapphire samples before and after the treatment. The optical microscopic results indicate that the HPHT process can enhance the sapphire color to a vivid blue at temperatures above $1750^{\circ}C$. The UV-VIS-NIR spectra identify the color changes explicitly and quantitatively through providing the Lab color scales and color differences. Both results demonstrate that the colors of natural sapphires can be enhanced to a vivid blue using the HPHT process above $1750^{\circ}C$ under 1 GPa for 5 minutes.

• Bulletin of the Korean Chemical Society
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• 제32권5호
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• pp.1579-1582
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• 2011

Alumina particles wrapped in few-layer graphene sheets were prepared by calcining aluminum nitride powders under a mixed gas flow of carbon monoxide and argon. The graphene sheets were characterized by powder X-ray diffraction (XRD), Raman spectroscopy, electron energy loss spectroscopy, and high-resolution transmission electron microscopy. The few-layer graphene sheets, which wrapped around the alumina particles, did not exhibit any diffraction peaks in the XRD patterns but did show three characteristic bands (D, G, and 2D bands) in the Raman spectra. The dye-sensitized solar cell (DSSC) with the alumina particles wrapped in few-layer graphene sheets exhibited significantly improved overall energy-conversion efficiency, compared to conventional DSSC, due to longer electron lifetime.

• Bulletin of the Korean Chemical Society
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• 제30권9호
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• pp.2071-2076
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• 2009

The single-walled carbon nanotubes (SWCNTs) produced by chemical vapor deposition (CVD) were directly fluorinated with fluorine ($F_2$) gas in a temperature range 20 ~ 400 ${^{\circ}C}$. The surface properties and morphology of the SWCNTs were investigated in terms of fluorination temperature. As a result, Raman spectra showed a pair of bands at 1340 and 1590 $cm^{-1}$ peculiar to disordered $sp^2$-carbons. These results indicated that C-F bonds were formed on the rear surfaces of the nanotubes by fluorination, while the external surfaces as well as the layers between the internal and external surfaces retained their $sp^2$-hybridization. XPS analysis exhibited that fluorine atoms were bonded to carbon atoms on internal surfaces (rear surfaces) of the nanotubes and the amount of fluorine attached on the nanotubes was increased with increasing the fluorination temperature. Consequently, the direct fluorination of carbon nanotubes led to functionalization and modification of pristine nanotubes with respect to surface and morphological properties.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• 제19권10호
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• pp.930-934
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• 2006

This paper reports a change of carbon nanotubes(CNTs) properties by post-treatment process after growth of CNTs. CNTs were treated by thermal method and solution method, and then investigated in detail using field emission scanning electron microscopy(FE-SEM), high resolution transmission scanning electron microscopy(HR-TEM), RAMAN spectroscopy, and Fourier Transform Infrared Spectrometer (FT-IR). FT-IR spectra showed that the amount of hydroxyl generated on surface of CNTs were changed with post-treatment condition. FE-SEM and TEM images were shown CNTs diameter and density variations were dependent with their treatment conditions. RAMAN spectroscopy was shown that carbon nanotubes structure vary with treatment conditions.

• Proceedings of the Materials Research Society of Korea Conference
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• 한국재료학회 2003년도 춘계학술발표강연 및 논문개요집
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• pp.42-42
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• 2003

Ni/Si 기판상에 CH$_4$, H$_2$, $N_2$의 혼합기체를 사용하여 $700^{\circ}C$에서 5분 동안 MPECVD법으로 탄소나노튜브 성장시켰다. 이 과정에서 CH$_4$, H$_2$에 대한 $N_2$의 유량비를 여러 가지 값으로 변화시켜 그 성장 양상을 살펴보았다. 혼합기체 내 질소의 함량에 따라 나노튜브의 성장길이와 quality가 달라짐을 SEM과 Raman spectroscopy 측정을 통하여 확인하였다. 나노튜브의 성장 시 혼합기체 내 주입하는 질소량에 의해 나노튜브의 성장길이가 변화됨을 SEM을 통해 관찰할 수 있었고 혼합기체 내 질소의 비율이 커질수록 carbonaceous particle 등의 감소로 인한 나노 튜브의 quality가 향상됨을 Raman spectra를 통해 확인할 수 있었다. 또한 TEM과 SEM 관찰을 통해 성장된 탄소나노튜브가 대나무(bamboo) 구조를 가진 수직 배향된 다중벽 탄소나노튜브임을 확인하였다.